Datasheet MI3461 Datasheet (MegaPower)

P-Channel 60V (D-S)MOSFET

MI3461

General Description

This miniature surface mount MOSFET uses advanced Trench process,low RDS(ON) assures minimal power

lo ss an d en ergy conv ert, which make s th is de vice ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switch DC-DC c onv ert ers

Power management

D

S

G

SOT23

Features

VD S (V) = -60V

ID (A) = -2.7A (VGS = - 10V )

RD S(on) = 110 mΩ @ VGS = - 10V

RD S(on) = 160 mΩ @ VGS = -4.5V

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

G

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

θ

R JA

Maximum Junction-to-Ambient

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-60

±20

-2.7

-2.2

V

A

-11

-1.0

1. 4

1. 0

-55 to 150

Maximum

90

130

Feb.20 12 Re v.2.0

A

W

℃

Units

℃/W

Package Outlines and Ordering Information

Device

MI3461

Device Marking

S60P

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

c

Drain-Source On-Resistanc e

Forward Tranconductance

c

Diode Forward Voltage

Dynamic

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±20 V

VDS=-60V,VGS=0V

VDS=-60V,VGS=0V,TJ=55℃

ID (on)

VDS=-20V,VGS=-4.5V

VGS=-10V,ID=-3.5A

c

RD S(on )

g

fs

VS D

VGS =-4. 5 V, ID=-2.0A

VD S=-5V,ID =-3.5A

IS =-1.0A,VGS=0V

Tape Width

8mm

Limits

Min Typ Max

-60

-1.0 -2.0

-11

88

120

12

-0.8

Quantity

3000 units

-3.0

±100

-1

-10

110

160

-1.2

MI3461

Units

V

nA

uA

A

mΩ

S

V

Input Capicitance

Output capacitance

Reverse Tra nsf er Ca pac ita nce

Ci ss

Co ss

Cr ss

VD S =-30,VGS =0V f=1MHz

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a. Surfa ce Mo unted on 1” x 1 ” FR4 Board . b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

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Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

VD S=-30V,VGS=- 10V

VDS=-30V, ID=-1.0A,

RG=6 ohm,VGEN=-4.5V

ID =-2.7A

2

745

69

42

13.5

1. 5

3. 2

12

65.8

22

pF

nC

ns

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3461

15

12

-ID - Drai n Cur rent(A)

240

200

160

120

80

RD S(on ) On-R esistan ce( mΩ)

40

-10V

9

6

3

0

0 0.5 1.0 1. 5 2.0 2 .5 3.0

Figure 1 :Outpu t Cha racteri stics

-4.5V

-4V

-3.5V

VGS =-4.5V

VGS =-10V

VGS =-3V

15

12

9

6

-ID - Drai n Cur rent(A)

3

0

0 0.9 1.8 2. 7 3.6 4 .5 5.2

25℃

125℃

-55℃

-V GS(Vo lts)-VDS Dra in -to-So urc e Voltage( V)

Figure 2 :T ransfe r Charact eristic s

0. 3

ID= -2. 7A

0. 25

0.2

125℃

0.15

75℃

0.1

25℃

RD S(on ) On-R esistan ce( Ω)

0.05

0

Figure 3 : On-Resi stance vs .Drain C urrent

2.0

1.8

1.6

1.4

1.2

RD S(on ) On-Resi stance

(Norma liz ed)

1.0

0.8

0 25

TJ ,Junc tio n Tempera tur e( )℃

Figure 5 : On - Resis tance Var iation

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-ID,Dr ain Curre nt(A)

and Gate Vo ltage

VG S =-10 V ID =-2.7 A

VG S =-4. 5V ID =-2.0 A

50

75

100

T e mper atu re

125

With

150

0

0 2 4 6 8 100 2 4 6 8 10

-VGS,Gate- to-Source Vol tage(V)

Figure 4 :On -Resist ance vs.G ate -Source Vo ltage

2

1

125℃

25℃

-IS -Sou rce C urrent( A)

0

0 0.3 0.6 0. 9 1.2 1 .5

-VSD Sou rce -to-D rai n Voltage( V)

Figure 6 : Sou rce-Dra in Forwar d Volt age

3

Feb.20 12 Re v.2.0

Typical Electrical and Thermal Ch aracteristics

MI3461

10

8

VD S=-30V ID= -2. 7A

6

4

2

Gate-t o-S ource Volt age(V)

0

0 2 4 6 8 10 12 14 16

Qg- Tota l Gat e Charge( nC)

Figure 7 : Gate - t o - S ource and

Drain - to - S ource V ol tage vs. T

100.0

T

=150°C

J(M ax)

T A =25°C

R

DS( ON)

10.0

limited

-ID(A)

1.0

0.1s 10ms

1s

10s

0.1

1 1

DC

-VDS (Volts)

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

10

1

D=T on/T

T

J,P K=TA +PDM

Rθ JA=130 W℃/

.

Z

JA

θ

nt e

i s n a

e

r

c

ive T t

edan p

e

ff

d

E

l

c d e

ma

z

0.1

i

er h

mal

T

Nor

otal Charge

100us

1ms

0 100

1200

1000

C

800

iss

600

400

Capaci tan ce(pF)

Cr ss

200

0

0 5 10 15 20 25 30

-V D S D r a i n - t o - S o u r c e V o l t a g e ( V )

Figure 8 :Ca pacitan ce

40

T

J(M ax)

T A =25°C

30

)

W

(

r e

20

w o

P

10

0

0.001 0.0 1 0.1

1 1

Pulse Wi dth ( s)

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

Ambien t (No te d)

In desce ndi ng order D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

Co ss

=150°C

0 100 1000

0.01

0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

Note d:

These te sts a re perfor med with th e device mo unt ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

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2

4

Feb.20 12 Re v.2.0

Package Outline

SOT23_3Lead

MI3461

D

3

1 2

e

e1

T OP VIEW

E1 E

Unit: mm

S ymb ol Min Nom M ax

A 0.70 1.15

A1 0. 00

b 0.30 0.50

c 0.20

0.08

D 2.80 3.10

E 2.60 3.00

E1 1. 40 1 .80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0.95 BSC

e 1 1 .90 B SC

L 0.40 REF

L 1 0.54 REF

0 º º

θ

8 º

5

A

b

A1

SIDE VIEW

Notes:

(1) All dimensions are in m ill ime ters.Angles in degre es. (2)

Package body sizes exclude m old flash and gate burrs.

(3)

Complies with JEDEC TO-236.

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θ

L1 L

END VIEW

Doc.SOT23_3L-071012

5

Feb.20 12 Re v.2.0

c