Datasheet MI3446 Datasheet (MegaPower)

N- Channel 40V (D- S)MOSFET

MI3446

General Description

Thi s min iature surface mount MOSFET use s adv anced Trenc h proce ss ,l ow R DS( ON ) as su res mi nimal

power loss and energy conversion, which makes this device i deal f or u se i n p ower m anagement c ircuit.

Applications

Load switch DC-DC c onv ert ers

Power management

Features

VD S(V)=40V

ID (A)=5. 0A (VGS=10V)

RD S(ON )=31 mΩ @ VGS =10V

RD S(ON )=45 mΩ @ VGS = 4.5V

Low gate charge

Fast switching speed

High performance trench techn olo gy fo r ext rem ely

low RDS(ON)

High power and current handl ing c apa bil ity

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Curren t (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Te mpe rat ure R ang e

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

Rθ JA

Maximum Junction-to-Ambie nt

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

40

±20

5.0

4.0

20

3.5

1.4

1.0

-55 to 150

Maximum

90

130

Feb.2012 Rev.2.0

V

A

W

℃

Units

℃/W

Ordering Information

Device

MI3446

Device Marking

S40N

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Tape Width

8mm

MI3446

Quantity

3000 units

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Tranconductance

c

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Gate Resistance

Switching

Total Gate Charge(10 V)

Total Gate Charge(4. 5V)

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Body Diode Reverse Recover y Time

Body Diode Reverse Recover y Cha rge

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(o n)

g

fs

VS D

Ci ss

Co ss

Cr ss

Rg

Qg(10V)

Qg(4.5V)

Qgs

Qgd

td (on)

tr

td (off)

tf

tr r

Qr r

Test Conditions

VG S=0V, ID=250uA

VDS =VGS,ID = 250 uA

VD S=0V, VGS =±20V

VDS=32V,VGS=0V

VDS=32V,VGS=0V,TJ=55℃

VDS=5V,VGS=10V

VG S=4.5 V, ID= 3. 0A

VGS =10 V, ID =5. 0A

VD S=20V,ID =5. 0A

IS =1. 0A, VGS =0V

VG S=0V,V DS=20V, f=1MHz

VG S=0V,V DS=0V,f=1MHz

VD S=20V,VG S=10 V

ID =5.0 A

VDD=20V, ID=1A,

RG=6 ohm,VGEN=10V

RL=15 ohm

If =-5A,di/dt=100A/us

Limits

Min Typ Max

40

1. 0 2. 3 3. 0

±100

1

5

20

32

22

45

31

23

0. 77

1. 0

404

95

37

2. 7

12.8

7

1. 9

3. 5

4. 3

3. 4

15

2. 8

21

15

Units

V

nA

uA

A

mΩ

S

V

pF

Ω

nC

ns

nC

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd. b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

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2

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3446

30

10V

25

20

15

ID (A)

10

5

0

0 1 2 3 4 5

40

35

30

25

RD S(ON )(mΩ )

20

15

5V

4. 5V

4V

Vgs=3 .5V

VD S(volts )

Figure 1: On -Re gio n Charact eristic s

VG S=4.5V

VG S=10V

20

VD S=5V

15

ID =5. 0A

125℃

25℃

VG S(volts )

VG S=10V

VG S=4.5V

10

ID (A)

5

0

2 2. 5 3 3. 5 4 4.5

Figure 2:Transfer C haracte ris tics

2. 0

1. 8

1. 6

1. 4

1. 2

Normal ize d On Resist ance

1. 0

10

0

ID (Am ps) Figure 3 :On-R esistan ce VS .Dr ain C urrent an d Gate Voltage

80

60

40

RD S(ON )(mΩ )

20

0

2

VG S(volts ) Figure 5 :On-R esistan ce vs .Ga te- Sou rce Voltag e

25℃

5

4

10 15 20

ID =5. 0A

125℃

6 8 10

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0. 8

0 25 50 75 100 1 25 15 0 175

Temperat ure (℃) Figure 4:On- Resista nce v s.J unc tion Te mperatu re

1E+01

1E+00

1E-01

1E-02

Is(Am ps)

1E-03

1E-04

1E-05

0. 0 0. 2 0. 4 0. 6 0.8 1.0

125℃

25℃

VS D(v olt s)

Figure 6 : Bod y diode cha racteri sti cs

3

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3446

10

VD S=40V

8

ID =5. 0A

6

4

VG S(Volts)

2

0

0 3 6 9 12 15

Qg (nC )

Figure 7 :Gate- Charge C har acteris tics

100.0

T

=150°C

J(M ax)

T A =25°C

R

10.0

DS( ON)

limited

(A mps )

D

I

1.0

0.1s

100us

1ms

10ms

1s

10s

0.1

1 1

DC

VDS (Volts)

0 100

Figure 9 : Max imum Forw ard Biase d Saf e

Operat ing Ar ea (Note d)

800

600

400

Capaci tan ce( pF)

200

Cr ss

0

0 10 20 30 40

Figure 8 :capac ita nce Chara cterist ics

40

30

)

W

(

r e

20

w o

P

10

0

0.001 0.01 0.1

Figure 1 0: Si ngle Puls e Power Rat ing J unction -to-

VD S(volts )

Pulse Wi dth ( s)

Ambien t (No te d)

Ci ss

Coss

T

J(M ax)

T A =25°C

0 1 00 1000

1 1

=150°C

10

t n

ie s

a

e c

ive r n t T

e n

c

p da

e f

e

f

d l

E e

ma r

z d

0.1

e

a i

h T

m l

Nor

1

D=T on/T

T

J,P K=TA +PDM

Rθ JA=130 W℃/

.

Z

JA

θ

In desce ndi ng order D=0.5, 0 .3, 0 .1, 0.05, 0 .02, 0.01 , single pu lse

P

D

T

o n

T

0.01

0.00001 0.0001 0.001 0.01 0 .1 1 1 0 100 1000

Pulse Wi dth ( s)

Figure 11 : Normali zed Maxim um Tra nsient Therma l Imp edance

These te sts a re perfor med with th e dev ice mount ed on 1 in FR -4 bo ard with 2o z. Copper, i n a sti ll air envi ronment w ith

Note d:

T A=25 °C. The SOA cu rve provi des a s ingle pul se rating .

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2

4

Feb.2012 Rev.2.0

Package Outline

SOT23_3Lead

MI3446

D

3

1 2

e

e1

T OP VIEW

E1 E

Unit: mm

S ymb ol Min No m Max

A 0.70 1.15

A1 0. 00

b 0.30 0.50

c 0.20

0.08

D 2 .80 3.1 0

E 2.60 3.00

E1 1. 40 1. 80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0. 95 BS C

e 1 1.9 0 BSC

L 0.4 0 REF

L 1 0. 54 RE F

0 º º

θ

8 º

5

A

b

A1

SIDE VIEW

Notes:

(1) All dimension s are i n mil lim eters.Angles in degr ees . (2)

Package body sizes exclude m old flash and gate burrs.

(3)

Complies with JEDEC TO-236.

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θ

L1 L

END VIEW

Doc.SOT23_3L-071012

5

Feb.2012 Rev.2.0

c