Datasheet MI3415 Datasheet (MegaPower)

MI3415

P-Channel 20V (D-S)MOSFET

General Description

This miniature surface mount MOSFET uses ad vanced Trench process,low RDS(ON ) assures minimal power

lo ss and ene rgy co nvert , wh ich m akes t his de vice ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switching Low current DC-DC co nve rte rs

Small power management

Features

VD S (V)=-20V

ID (A)=-5.3A(VGS =-4.5V)

RD S(on) = 34 mΩ @ VGS=-4.5V

RD S(on) = 48 mΩ @ VGS=-2.5V

RD S(on) = 80 mΩ @ VGS=-1.8V

ESD Rating:3000V HBM

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

.

G

Top Vi ew

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

R θJA

Maximum Junction-to-Ambie nt

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-20

±12

V

-5.3

-4.2

A

-21

-1

1. 4

1. 0

-55 to 150

Maximum

90

130

Feb.2012 Rev.2.0

A

W

℃

Units

℃/W

Package Outlines and Ordering Information

Device

MI3415

Device Marking

MPOS

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resist anc e

Forward Tranconductance

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd. b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

c

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(on )

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±12V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V,TJ=85℃

VDS=-5V,VGS=-4.5V

VGS=-4.5V,ID=-5.3A

VGS =-2.5 V, ID=-2.5A

VGS =-1.8 V, ID=-2A

VD S=-5V,ID =-5.3A

IS =-1A,VGS=0 V

VD S=-10V,VGS =0V

f=1MHz

VD S=-10V,VGS=- 4.5 V

ID =-5.3A

VDS=-10V, ID=-2.2A,

RG=6 ohm,VGEN=-4.5V

Tape Width

8mm

Limits

Min Typ Max

-20

-0.5

-0.8

-21

25

34

52

21

-0.75

1500

220

160

14

2.1

4.7

6

13

86

42

Quantity

3000 units

-1

±10

-1

-30

34

48

80

-1.3

20

11

23

145

70

MI3415

Units

V

uA

A

mΩ

S

V

pF

nC

ns

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2

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3415

18

16

14

VGS =-3,-4, -5, -6, -7,-8 ,-9 ,-10V

-2V

12

10

8

6

-ID-Dr ain Curre nt( A)

4

-1.5V

2

0

0. 0 0. 5 1.0 1 .5 2.0 2. 5 3. 0

-VDS Drain-t o-So urce Volta ge(V )

Figure 1: Out put Chara cter istics

100

90

80

VGS =-1.8V

70

60

50

40

30

VGS =-2.5V

VGS =-4.5V

20

RD S(on)- On -Resi stance( Ω)

10

0

0 3 6 9 12 15 18

-ID- Dra inCu rrent(A)

Figure 3 : On-R esistan ce vs Dr ain Curre nt

1. 8

1. 6

ID= -25 0uA

1. 4

1. 2

1. 0

0. 8

0. 6

-VG S(th) Va rian ce(V)

0. 4

0. 2

0

-50 -25 0 25 5 0 75 10 0 125 150

TJ- Tempe ratu er(℃)

Figure 5: Thr esho ld Voltage

1. 8

VGS =-4.5V IDS =-5.3A

1. 6

1. 4

1. 2

1. 0

0. 8

RD S(ON) -On Re sist ance

(Norma lize d)

0. 6

0. 4

RON @Tj= 25℃;2 8mΩ

-50 -25 0 25 5 0 75 10 0 125 150

TJ -Jun ctio n Tem peratur e(℃)

Figure 2 : On-R esistan ce vs. Junctio n Tem pera ture

80

70

60

)

ΩS

m

50

e c ( n a

t

40

s

i s e

R

30

n O

20

ON -

(

D )

10

R

0

0 1 2 3 4 5 6 7 8 9 10

-VGS Gate-to -Sou rce Voltag e(V)

Figure 4 : On-R esis tance vs. Gate -to- Sou rce Vol tage

10

Tj= 150℃

Tj= 25℃

1

-Is-So urce C urre nt(A)

0. 1 0 0. 2 0. 4 0.6 0 .8 1.0 1. 2 1. 4 1.6

-VSD -So urce -to- Drain Volt age( V)

Figure 6: Sou rce- Drain Dio de For ward Vo lta ge

ID= -5. 3A

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3

Feb.2012 Rev.2.0

Typical Electrical and Thermal Ch aracteristics

MI3415

5

VD S=-10V

4. 5

ID= -5.3A

VV

( )

4

e ag

t

3. 5

ol V

3

e rc

2. 5

ou

-S o

2

-t t

a e

1. 5

SG G

1

-

0. 5

0

0 2 4 6 8 10 12 14 16

Qg-Total G ate Ch arge(nC )

Figur 7 :G ate Ch ange

1. 0

0. 9

0. 8

0. 7

0. 6

0. 5

0. 4

Pto t-Po wer (W)

0. 3

0. 2

0. 1

TA= 25℃

0

0 20 40 60 80 10 0 120 1 40 160

Tmp -Mounti ng Point Temp .(℃)

Figure 9 :Power C apa bility

50

RD S(on) Limi ted

10

1

-ID(Am ps)

0. 1

TA= 25℃

0. 01

0. 01 0. 1 1 10 100

-VDS(Vo lts)

Figure 11 :Maximu m Forward B ias ed Safe Operat ing A rea

300us

1ms

10ms

100ms

10s

DC

2100

Freque ncy =1MHz

1800

1500

1200

900

Capaci tanc e(pF )

600

300

Coss

Crss

0

0 4 8 12 16 20

-VDS Dai n-to -Source Vo ltag e(V)

Figure 8 : Capa citance

5

4. 5

4

3. 5

3

2. 5

2

1. 5

-ID-Dr ain Curre nt( A)

1

0. 5

TA= 25℃,V G=-4 .5V

0

0 20 40 60 80 10 0 120 1 40 160

Tmp -Mounti ng Point Temp .(℃)

Figure 1 0:Curr ent C apabili ty

1

Duty=0 .5

0. 2

0. 1

0. 05

0. 02

0. 01

0. 01 Single P uls e

Normal ize d Effe ctive Transie nt

0. 001

1E-4 1E- 3 0.0 1 0.1 1 10 100

Mounte d on 1i n pad RθJA: 150℃/W

Square Wave Pu lse Durat ion (s)

Figure 1 2:Transien t Thermal I mpe dance

Ciss

2

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4

Feb.2012 Rev.2.0

Package Outline

SOT23_3Lead

MI3415

D

3

1 2

e

e1

T OP VIEW

E1 E

Unit: mm

S ymb ol Min Nom M ax

A 0.70 1.15

A1 0.00

b 0.30 0.50

c 0. 20

0.08

D 2.80 3.10

E 2.60 3.00

E1 1.40 1.80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0.95 BSC

e1 1.90 BSC

L 0.40 REF

L1 0.54 REF

0 º º

θ

8 º

5

A

b

A1

SIDE VIEW

Notes:

(1) All dimensions are in m ill ime ters.Angles in degre es. (2)

Package body sizes exclude m old flash and gate burrs.

(3)

Complies with JEDEC TO-236.

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θ

L1 L

END VIEW

Doc.SOT23_3L-0710 12

5

c

Feb.2012 Rev.2.0