Datasheet MI2312 Datasheet (MegaPower)

N-Channel 20V (D-S)MOSFET

MI2312

General Description

This miniature surface monut MOSFET uses
advanced trench process , low RD S(on) assur es

minimal power loss and energy conversion ,
which makes this device ideal for use in power
management circuit.

Applications

Load switch
DC-DC con verte rs

Power management

Features

VD S (V) = 20V

ID (A) = 6.0A (VGS = 4 .5V)

RD S(on) = 24mΩ @ V GS = 4.5V

RD S(on) = 33mΩ @ V GS = 2.5V

RD S(on) = 52mΩ @ V GS =1.8V

Low gate charge

Fast sw itching speed

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temp eratu re Rang e

a

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Ts tg

Maximum Units

20

±8

6.0

4.8

24

1.5

1.4

1.0

-55 to 150

V

A

A

W

℃

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

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a

t<= 10 se c

Steady-State

1

Symbol

R θJA

Maximum

90

130

Feb.2 012 R ev.2.0

Units

℃/W

Package Outlines and Ordering Information

Device

Device Marking

MPDSMI2312

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate- Threshold Voltage

Gate- Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Tranconductance

c

c

c

Diode Forward Voltage

Dynamic

Input Capicitance

Outpu t capacitance

Reverse Tr ansfe r Capac itanc e

Total Gate Charge

Gate- Source Charge

Gate- Drain Charge

Switc hing

Tur n-On De lay Time

Rise Time

Tur n-Off Delay Time

Fall-Tim e

Notes : a. Su rfa ce Mo unted on 1” x 1” FR4 Bo ard .
b. Puls e wid th li mit ed by maximum jun cti on te mpe rature

c. Puls e tes t: PW < = 300 us du ty cycle <= 2% .

Symbol

V( BR)DSS

VG S(th )

IG SS

ID SS

ID (on)

RD S(on)

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on)

tr

td (off )

tf

Test Con ditio ns

VG S=0V,ID =250uA

VD S =VG S,I D = 250uA

VD S=0V,VG S=±8V

VDS=20V,VGS=0V

VDS=20V,VGS=0V,TJ=55℃

VDS=5V,VGS=4.5V

VGS=4.5V,ID=6.0A

VG S=2.5 V, ID=2.8A

VG S=1.8 V, ID=2.0A

VD S=5V,ID=6.0A

IS =1.0A,VGS =0V

VD S = 10V ,VGS = 0V
f= 1MHz

VD S=10 V,VG S=4. 5V

ID =6.0 A

VDS=10V, ID=1.0A,

RG=6 ohm,VGEN=4.5V

Tape Width

8mm

Min

20

0.60 0.85

24

Limit s

Typ

23

30

48

20

0.70

880

180

85

7.0

1.20

1.90

9

11

18

5

Quant ity

3000 units

Max

1.20

±100

1

10

24

33

52

1.20

10

17

18

29

10

MI2312

Units

V

nA

uA

A

mΩ

S

V

pF

nC

ns

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2

Feb.2 012 R ev.2.0

Typical Electrical and Thermal Characteristics

MI2312

25

20

VG S=4. 5 thr u=2 .0V

15

1.5V

10

5

ID -Drain C urr ent (A)

0

0 1 2 3 4

VD S Drai n-t o-S our ce Vol tag e(V )

Figure1: Outpu t Cha rac ter ist ics

0.15

0.12

0.09

0.06

0.03

RD S(on)-On -R esi sta nce (Ω)

0.00
0 3 6 9 12 15

Figure3: On-Re sis tan ce vs D rai n Cur ren t

VG S=1.8V

VG S=4. 5V

ID - Drai nCu rre nt( A)

1.0V

VG S=2. 5V

15

12

9

6

ID -Dra in Cu rre nt( A)

3

0

0. 0 0. 5 1. 0 1. 5 2.0

Figure2: Tr ans fer Characteris tic s

0.20

0.16

)

m
e

c

0.12

st n

R si a
n e

0.08

O

)- ( Ω

N

S(O

0.04

RD

0.00
0 2 4 6 8

Figure 4: On -Re sis tan ce vs .Ga te-to-S our ce Vol tag e

TC =125℃

25℃

-55℃

VG S Gate -So urc e Volt age (V)

ID= 6.0 A

VGS G ate -to -So urc e Volt age(V)

8

6

VV G

(

e )
ag

l
o t

4

rc
u

S
t -

e o o e V
at -

2

S
G

0

0 2 4 6 8

VDS = 10V
ID =6.0A

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Qg-Total Gate Char ge( nC)

Figur5 :Gate Cha nge

1.6

1.4

1.2

1.0

RD S(ON )-On Resistance

(Normalized)

0.8

0.6

-50 0 50 100 150

VG S=4. 5V
ID = 6.0A

TJ -Jun cti on Temp era tur e(℃)

Figure6: On-Re sis tan ce vs .Ju nct ion Tem per atu re

3

Feb.2 012 R ev.2.0

Typical Electrical and Thermal Characteristics

MI2312

20

10

TJ= 150℃

_

1

TJ= 2 5℃

0.1

Is-Sou rce C urr ent (A)

0.01

0.0 0.2 0.4 0.6 0 .8 1. 0 1.2
VSD - Sou rce -to -Dr ain Vo lta ge(V)

Figure 7: So urc e-D rai n Dio de Fo rward Voltage

0.3

0.2

0.1

0.0

-0.1

-0.2

VGS (th) Var ian ce( V)

-0.3

-0.4

-0.5

-50 -25 0 25 5 0 75 10 0 125 1 50

2

nt

1

Duty Cyc le = 0. 5

r sieNo a
T an

e

e

ct

E e
d

ze ff i v
li

m
r

0.2

a c
ed

0.1

0.1

de
I

0.05

ma p nT
r

0.02

he

0.011

-4 -3 - 2 -1

10 10 10 10

ID= 250uA

TJ- Tempe rat uer (℃)

Figure 9: Th res hol d Volt age

Single puls e

Figure 11: No rma liz ed Thermal Taran sie nt Im pen dan ce,Junction-t o -Am bie nt

1500

1200

900

600

Capaci tan ce( pF)

300

Crss

0

0 4 8 12 16 20

VD S Dain -to -So urc e Volt age (V)

10

8

6

W)

(

r
e

w
Po

4

2

0

0.01 0.10 1.0 0 10. 00 10 0.0 0 100 0.0 0

Square Wave Pulse Dura tio n(s ec)

1 10 100 600

Ciss

Coss

Figure8: Capac ita nce

TC = 25℃
Signle Puls e

Tim e(s ec)

Figure 10: S ing le Pl use P owe r

No te:

PDM

T1

1.Duty Cycl e ,D= t 1/t 2

2.Per Unit Ba se= R JA=166℃/W

3.TJM- T A=P DMZ JA (t)

4.Surface M oun ted

t2

θ

θ

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4

Feb.2 012 R ev.2.0

Package Outline

SOT23_3Lead

MI2312

D

3

1 2

e

e1

T OP VIE W

E1 E

Unit:mm

Sy mbo l M in Nom Max

A 0.70 1.15

A1 0.00

b 0.30 0.50

c 0.20

0.08

D 2.80 3.10

E 2.60 3 .00

E1 1.40 1.80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0 .95 BSC

e 1 1 .90 BSC

L 0.4 0 REF

L 1 0.5 4 REF

0 º º

θ

8 º

5

A

b

A1

SIDE VI EW

Notes :

(1) All dim ensio ns ar e in mill imeters. Angles in de grees .
(2)

Package body sizes exclude mold fla sh and ga te burrs.

(3)

Compl ies wit h JED EC TO -236.

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θ

L1 L

END VIE W

Doc.SOT23_3L-0710 12

5

c

Feb.2 012 R ev.2.0