Datasheet MI2305 Datasheet (MegaPower)

P-Channel 20V (D-S)MOSFET

MI2305

General Description

This miniature surface mount MOSFET uses a dvanced
trench process,low RDS(ON) assures minimal power
loss and energy conversion , which makes this device
ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switch
DC-DC co nvert ers

Power management

D

S

G

SOT23

Features

VD S (V) = -20V

ID (A) = -4.4A (V GS = -4 .5V)

RD S(on) = 52 mΩ @ VG S = -4. 5V

RD S(on) = 72 mΩ@ V GS =- 2.5V

RD S(on) = 120 mΩ @ VG S = -1. 8V

Low gate charge

Fast sw itchi ng speed

G

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Gate- Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Power Dissipation

Operating Junction and Storage Temp eratu re Rang e

a

a

b

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Ts tg

D

S

Maximum Units

-20

±8

-4.4

-3.5

-17. 6

-1.2 5

1.4

1. 0

-55 to 150

V

A

A

W

℃

Thermal Resistance Ratings

Parameter

Maximum Junction-to-Ambient

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a

t<= 10 se c

Steady-State

1

Symbol

Rθ JA

Maximum

90

130

Units

℃/W

Feb.2012 Rev.2.0

Package Outlines and Ordering Information

Device

Device Marking

MPLSMI2305

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate- Threshold Voltage

Gate- Body Leakage

Zero Gate Voltage Drain Current

On-St ate Dra in Current

c

Drain-Sou rce On- Resi stanc e

Forward Tranconductance

c

Diode Forward Voltage

Dynamic

Input Capacitance

Outpu t Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate- Source Charge

Gate- Drain Charge

Switc hing

Tur n-On De lay Time

Rise Time

Tur n-Off Delay Time

Fall-Tim e

c

Symbol

V( BR)DSS

VG S(th )

IG SS

ID SS

ID (on)

RD S(o n)

g

fs

VS D

Ci ss

Co ss

Cr ss

Qg

Qg s

Qg d

td (on )

tr

td (of f)

tf

Test Con ditio ns

VG S=0V,ID =-2 50uA

VD S =VG S,I D = -250 uA

VD S=0V,VG S=±8V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V,TJ=55℃

VDS=-5V,VGS=-4.5V

VGS=-4.5V,ID=-4.4A

VG S=-2.5 V, ID =-3.0A

VG S=-1.8 V, ID =-1.0A

VD S=-5 V,ID =-4.4A

IS =-1.0A,V GS=0V

VD S=-4 V,VG S=0V

f=1MH z

VD S=-4 V,VG S=-4 .5V

ID =-4. 4 A

VDS=-4V, ID=-1.0A,

RG=6 ohm,VGEN=-4.5V

Tape Width

8mm

Min

-20

-0.6 2

-17. 6

Limit s

Typ

-0.8

46

60

90

13

-0.7

1240

370

210

10

2

3. 5

14

20

88

54

Quant ity

3000 units

Max

-1.3 6

±100

-1

-10

52

72

120

-1.2

15

MI2305

Units

V

nA

uA

A

mΩ

S

V

pF

nC

ns

Notes :a. Sur fac e Mou nte d on 1” x 1” FR4 Board.
b. Puls e wid th li mit ed by maximum jun cti on te mpe rature

c. Puls e tes t: PW < = 300 us du ty cycle <= 2% .

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2

Feb.2012 Rev.2.0

Typical Electrical and Thermal Characteristics

12

V

= 4.5 thru 2.5 V

GS

10

8

6

2 V

12

10

MI2305

TC =-55℃

25℃

8

125℃

6

4

ID - Drai n Cur ren t(A )

2

0

0 1.0 2.0 3. 0 4.0

VD S Drain -t o-S our ce Vol tage(V)

Figur e1: O utp ut Ch aracteristi cs

0.30

0.25

0.20

0.15

V GS = 1.8 V

0.10

0.05

RD S(on ) On- Resistance( Ω)

0

0 2 4 6 8

V GS = 2.5 V

ID Drai n Cur ren t(A )

Figure3: O n-R esi sta nce v s. Dr ain C urrent

1.5 V

0.5 V

V GS = 4.5 V

0

1

1 2

4

ID Drai n Cur ren t(A )

2

0

0 0.5 1.0 1.5 2.0 2.5

VG S Gate-t o-S our ce Vol tage(V)

Figur e2: Tr ans fer C haracterist ics

0.5

0.4

0.3

0.2

ID =4. 4A

RD S(on ) On- Resistance( Ω)

0.1

0

0 2 4 6 8

VG S Gate-t o-S our ce Vol tage(V)

Figur e4: O n-R esi stance vs.Gat e-t o-S our ce Voltage

5

4

3

2

1

VG S Gate-t o-S our ce Vol tage(V)

0

0 2 4 6 8 1 0

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V DS = 4 V

I

= 4. 4 A

D

Qg- Total Gate C har ge( nC)

Figur e5: G ate C har ge

1.4

VG S =4.5V
ID =4.4A

1.2

1.0

0.8

RD S(on) On-Re sis tan ce (Ω )

(Nromali zed )

0.6

-50 -25 0 2 5 5 0 7 5 100 12 5 15 0

TJ - Junc tio n Tempe rat ure( )℃

Figur e6: O n -Re sis tance vs.Junc tio n Te mpe rat ure

3

Feb.2012 Rev.2.0

Typical Electrical and Thermal Characteristics

MI2305

30

10

TJ =150℃

1

IS -Sou rce C urr ent (A)

0.1

0.00 0.2 0.4 0. 6

VS D Source - to- Dra in Vol tage(V)

Figur e 7: So urc e-D rain Forward Vol tag e

0.4

0.3

0.2

0.1

0.0

VG S(th) Vari ance(V)

-0.1

I D = 250us

TJ =25℃

0.8

_

1.0

1.2

2000

1600

C

iss

1200

800

Capac ita nce (pF )

C

oss

400

C

rss

0

0 2 4 6 8

VD S Drain- to- Sou rce Vo ltage(V)

Figur e8: C apa cit ance

12

10

8

6

Power (W)

4

TA =25℃

2

-0.2

-50 -25 0 2 5 5 0 7 5 100 125 150

2

1

0.1

Norma liz ed Ef fec tiv e Tran sie nt

Tha rmal Impedanc e

0.01

-4

10

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TJ -Te mpe rat ure ( )℃

Figur e9: Thresho ld Vol tag e

Duty Cy cle = 0 .5

0.2

0.1

0.05

0.02

Singl e Pul se

-3

10

Figur e11 :Normali zed Ther mal Tr ans ien t Impedance,J unc tio n-t o-Ambien t

-2

10

Squar eWav e Pulse Duratio n(s ec)

-1

4

0

0.01

1

Tim e(s ec)

Figur e10 : Sin gle P ulse Power

Not es:

P

DM

1. Du ty Cycl e, D =

2. Pe r Unit Ba se = R

3. T

- TA = P

JM

4. Su rfa ce Mo unted

1 1 0 500 10

t

10 500 0.1

1

t

2

DMZ θJA

100

t

1

t

2

= 130 /W℃

θJA

(t)

100

Feb.2012 Rev.2.0

Package Outline

SOT23_ 3L ead

MI2305

D

3

1 2

e

e1

T OP VIEW

E1 E

Unit:mm

S ymbol Min Nom Max

A 0.70 1.15

A1 0.00

b 0.30 0. 50

c 0.20

0.08

D 2.80 3. 10

E 2.60 3.00

E1 1.40 1. 80

1.00

---

0.40

0.13

2.90

2.80

1.60

0.13

e 0.95 B SC

e1 1.90 B SC

L 0.40 REF

L1 0.54 REF

0 º º

θ

8 º

5

A

b

A1

SIDE VI EW

Notes :

(1) All dime nsions are i n milli met ers.A ngles in deg rees.
(2)

Package body sizes exclude mold fla sh and ga te burrs.

(3)

Compl ies wit h JED EC TO -236.

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θ

L1 L

END VIE W

Doc.SOT23_3L-071012

5

c

Feb.2012 Rev.2.0