Datasheet MHPM6B10A60D, MHPM6B20A60D Datasheet (Motorola)

1

MHPM6B10A60D MHPM6B20A60D

MOTOROLA

  

  

Integrated Power Stage
for 230 VAC Motor Drives

These modules integrate a 3–phase inverter in a single convenient package.
They are designed for 1.0 and 2.0 hp motor drive applications. The inverter
incorporates advanced insulated gate bipolar transistors (IGBT) matched with
free–wheeling diodes to give optimum performance. The top connector pins are
designed for easy interfacing to the user’s control board.

• Short Circuit Rated 10 µs @ 125°C

• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

• Compact Package Outline

• Access to Positive and Negative DC Bus

• UL

Recognized

MAXIMUM DEVICE RATINGS (T

J

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

IGBT Reverse Voltage V

CES

600 V

Gate-Emitter Voltage V

GES

± 20 V

Continuous IGBT Collector Current 10A60

20A60

I

Cmax

10
20

A

Peak Repetitive IGBT Collector Current

(1)

10A60
20A60

I

C(pk)

20
40

A

Continuous Diode Current 10A60

20A60

I

Fmax

10
20

A

Peak Repetitive Diode Current

(1)

10A60
20A60

I

F(pk)

20
40

A

IGBT Power Dissipation (TC = 25°C) 10A60

20A60

P

D

52
78

W

Diode Power Dissipation (TC = 25°C) 10A60

20A60

P

D

19
38

W

IGBT Power Dissipation (TC = 95°C) 10A60

20A60

P

D

23
34

W

Diode Power Dissipation (TC = 95°C) 10A60

20A60

P

D

8.3
17

W

Junction Temperature Range T

J

– 40 to +150 °C

Short Circuit Duration (VCC = 300 V , TJ = 125°C) t

sc

10

m

sec

Isolation Voltage V

ISO

2500 V

Operating Case Temperature Range T

C

– 40 to +95 °C

Storage Temperature Range T

stg

– 40 to +125 °C

Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws) — 12 in–lb

(1) 1.0 ms = 1.0% duty cycle

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MHPM6B10A60D/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1997

10, 20 AMP, 600 V

HYBRID POWER MODULES

PRELIMINARY




Motorola Preferred Devices

REV 2

MHPM6B10A60D MHPM6B20A60D

2

MOTOROLA

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I

GES

— — ±20 µA

Collector-Emitter Leakage Current (VCE = 600 V , VGE = 0 V)

TJ = 125°C

I

CES

— 6.0

2000

100 µA

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V

GE(th)

4.0 6.0 8.0 V

Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V

(BR)CES

600 — — V

Collector-Emitter Saturation Voltage (IC = I

Cmax

, VGE = 15 V)

TJ = 125°C

V

CE(SAT)

—
—

2.35

2.31

3.5
—

V

Diode Forward Voltage (IF = I

Fmax

, VGE = 0 V)

TJ = 125°C

V

F

—
—

1.23

1.12

2.0
—

V

Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)

10A60
20A60

C

ies

—
—

2300
4400

—
—

pF

Input Gate Charge (VCE = 300 V , IC = I

Cmax

, VGE = 15 V)

10A60
20A60

Q

T

—
—

75

135

—
—

nC

INDUCTIVE SWITCHING CHARACTERISTICS (T

J

= 25°C)

Recommended Gate Resistor

Turn–On 10A60

20A60

Turn–Off

R

G(on)

R

G(off)

—
—
—

180

47
20

—
—
—

W

Turn-On Delay Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

t

d(on)

—
—

375
215

—
—

ns

Rise Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

t

r

—
—

160
125

—
—

ns

Turn–Off Delay Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

t

d(off)

— 219 — ns

Fall Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

t

f

— 210 500 ns

Turn-On Energy

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

E

(on)

—
—

0.85

1.6

1.0

2.0

mJ

Turn-Off Energy

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

E

(off)

—
—

0.13

0.3

1.0

2.0

mJ

Diode Reverse Recovery Time

(IF = I

Fmax

, V = 300 V, RG as specified)

t

rr

— 150 —

ns

Peak Reverse Recovery Current

(IF = I

Fmax

, V = 300 V, RG as specified) 10A60

20A60

I

rrm

—
—

6.8
12

—
—

A

Diode Stored Charge

(IF = I

Fmax

, V = 300 V, RG as specified) 10A60

20A60

Q

rr

—
—

560

1060

—
—

nC

3

MHPM6B10A60D MHPM6B20A60D

MOTOROLA

INDUCTIVE SWITCHING CHARACTERISTICS

(TJ = 125°C)

Characteristic Symbol Min Typ Max Unit

Turn–On Delay Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

t

d(on)

—
—

335
200

—
—

ns

Rise Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

t

r

—
—

160
125

—
—

ns

Turn–Off Delay Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

t

d(off)

— 230 —

ns

Fall Time

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

t

f

— 460 —

ns

Turn–On Energy

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

E

(on)

—
—

1.2

2.2

—
—

mJ

Turn–Off Energy

(VCE = 300 V , IC = I

Cmax

, VGE = 15 V, RG as specified)

10A60
20A60

E

(off)

—
—

0.44

0.82

—
—

mJ

Diode Reverse Recovery Time

(IF = I

Fmax

, V = 300 V, RG as specified)

t

rr

— 240 —

ns

Peak Reverse Recovery Current

(IF = I

Fmax

, V = 300 V, RG as specified) 10A60

20A60

I

rrm

—
—

10
18

—
—

A

Diode Stored Charge

(IF = I

Fmax

, V = 300 V, RG as specified) 10A60

20A60

Q

rr

—
—

1330
2400

—
—

nC

THERMAL CHARACTERISTICS (Each Die)

Thermal Resistance — IGBT 10A60

20A60

R

q

JC

—
—

1.94

1.28

2.43

1.60

°C/W

Thermal Resistance — Free–Wheeling Diode 10A60

20A60

R

q

JC

—
—

5.28

2.61

6.60

3.26

°C/W

MHPM6B10A60D MHPM6B20A60D

4

MOTOROLA

TYPICAL CHARACTERISTICS

Figure 1. Normalized IC versus VCE, TJ = 25°C Figure 2. Normalized IC versus VCE, TJ = 125°C

Figure 3. IF versus V

F

Figure 4. t

d(off)

, tf, t

off

versus Normalized I

C

Figure 5. t

d(off)

, tf, t

off

, versus R

G

Figure 6. t

d(on)

, tr, ton versus I

C

6.00

VCE (V)

2.0

1.5

1.0

0.5

1.20

VF (V)

2.5

1.0

0

IC/I

Cmax

20 600

RG (

W

)

1400

800

600

400

200

0

40

I

C

/II

t

d(off)

(ns)

0

3.01.0 2.0 4.0 5.0

0.2 0.4 0.6 0.8 1.0

, tt

d

80 120100

1000

Cmax

6.00

VCE (V)

2.0

1.5

1.0

0.5

I

C

/I

0

3.01.0 2.0 4.0 5.0

Cmax

F

/I

1.20

800

100

0

0.2 0.4 0.6 0.8 1.0

, t

f

, t

off

IC/I

Cmax

t

d(on)

(ALL NORMALIZED ON t

1.20

10

1.0

0.1

0.2 0.4 0.6 0.8 1.0

, t

r

, t

on r

)

1.61.4

0.5

2.0

1.5

200

300

400

500

600

700

1200

f

, t

off

(ns)

VGE = 18 V

12 V

15 V

9.0 V

VGE = 18 V

12 V

15 V

9.0 V

IF (NORMALIZED)

IF (NORMALIZED), 125°C

tr @ 125°C

t

r

t

d(on)

@ 125°C

t

on

t

d(on)

ton @ 125°C

t

d

t

f

t

off

td @ 125°C

tf @ 125°C

t

off

@ 125°C

t

d

t

f

t

off

td @ 125°C

tf @ 125°C

t

off

@ 125°C

Fmax

5

MHPM6B10A60D MHPM6B20A60D

MOTOROLA

TYPICAL CHARACTERISTICS

Figure 7. t

d(on)

, tr, ton versus Normalized R

G

Figure 8. Eon, E

off

versus I

C

Figure 9. E

off

versus R

G(off)

at Rated I

C

Figure 10. Normalized Eon versus Normalized

R

G(on)

Figure 11. trr, Irr versus I

F

Figure 12. Capacitance Variation

2.50

RG/RG (RECOMMENDED)

10

1.0

IC, (A)

250

1.0

0.5

0

1200

RG (

W

)

0.05

0.04

0.03

0.02

0.01

0

RG/RG (RECOMMENDED)

0.50

2.0

1.5

1.0

0.5

0

1.0

VCE (V)

1000

1000

100

10

1.0

0.1

t

d(on)

(ALL NORMALIZED ON t

E

E

E

on

(NORMALIZED FOR E

0

1.00.5 1.5 2.0 3.0 5.0 10 15 20

1.5

2.0

2.5

20 40 60 80 100 1.5 2.0 2.5

20 40 60 80

CAPACITANCE, NORMALIZED TO I

1.20

IF/I

Fmax

10

1.0

0.1

t

0.2 0.4 0.6 0.8 1.0

rr

, (NORMALIZED TO 1), I

rr

, (NORMALIZED TO 10)

, t

r

, t

on r

)

, E (mJ)

on off

(mJ/A)

off

on

WITH

RECOMMENDED R

G(on)

)

Cmax

(pF/A)

Eon @ 125°C

E

off

@ 125°C

E

on

E

off

E

off

, 125°C

E

off

Eon, 125°C

E

on

t

d(on)

t

on

t

r

@ 125°C

I

rr

t

rr

@ 125°C

C

ies

C

res

C

oes

MHPM6B10A60D MHPM6B20A60D

6

MOTOROLA

TYPICAL CHARACTERISTICS

Figure 13. VGE versus Q

G

Figure 14. Reverse Biased Safe operating Area

Figure 15. Normalized Transient Thermal Resistance

Figure 16. Switching Waveforms

1000

QG (nC)

10

15

VCE (V)

6000

1.0

0

TIME (ms)

V

GE

(V)

I

NORMALIZED r(t)

5.0

0

6020 40 80 120 700100 200 300 400 500

10

100

140

(A)

C

0

0.4

0.2

0.8

0.6

1.0

1,000 10,000100101.00.10.01

MC33153

+15 V

R

G(on)

R

G(off)

20A60
10A60

+VGE = 15 V
–VGE = 0 V
RG AS SPECIFIED R

G(on)

TJ = 25

°

C

10A60 I

GBT

20A60 I

GBT

10A60 DIODE

20A60 DIODE

20A60

10A60

VCC = 300

Figure 17. Typical Gate Drive Circuit

OUTPUT, V

out

INVERTED

INPUT, V

in

10%

50%

90%

50%

90%

90%

t

r

10%

t

f

t

d(off)

t

d(on)

t

on

t

off

PULSE WIDTH

7

MHPM6B10A60D MHPM6B20A60D

MOTOROLA

APPLICATION INFORMATION

These modules are designed to be used as the power
stage of a three–phase AC induction motor drive. They may
be used for up to 230 VAC applications. Switching frequen­cies up to 10 kHz have been considered in the design.

Gate resistance recommendations have been listed.
Separate turn–on and turn–off resistors are listed, to be used
in a circuit resembling Figure 17. All switching characteristics
are given based on following these recommendations, but
appropriate graphs are shown for operation with different
gate resistance. In order to equalize across the two different
module ratings, a normalization process was used. Actual
typical values are listed in the second section of this
specification sheet, “Electrical Specifications,” but many of
the graphs are given in normalized units.

The first three graphs, the DC characteristics, are normal­ized for current. The devices are designed to operate the
same at rated maximum current (10 and 20 A). The curves
extend to I

Cpk

, the maximum allowable instantaneous

current.

The next graph, turn–off times versus current, is again
normalized to the rated maximum current. The following
graph, turn–off times versus R

G(off)

, is intentionally not
normalized, as both modules behave similarly during turn–
off.

Turn–on times have been normalized. Again, the graph
showing variation due to current has been normalized for
rated maximum current. The graph showing variation due to
gate resistance normalizes against the recommended R

G(on)

for each module. In addition, the times are normalized to tr at
the appropriate temperature. For example, t

d(on)

for a 10 A
module operating at 125°C at 4.0 A can be found by
multiplying the typical tr for a 10 A module at 125°C (160 ns)
by the value shown on the graph at a normalized current of

0.4 (1.6) to get 256 ns. The most salient features demon­strated by these graphs are the general trends: rise time is a

larger fraction of total turn–on time at 125°C, and in general,
larger gate resistance results in slower switching.

Graphs of switching energies follow a similar structure.
The first of these graphs, showing variation due to current, is
not normalized, as any of these devices operating within its
limits follows the same trend. E

off

does not need to be

normalized to show variation with R

G(off)

, as both are
specified with the same nominal resistance. Eon, however,
has been appropriately normalized. Gate resistance has
been normalized to the specified R

G(on)

. In order to show the
effect of elevated temperature, all energies were normalized
to Eon at 25°C using the recommended R

G(on)

.

Reverse recovery characteristics are also normalized. IF is

normalized to rated maximum current. I

rrm

is normalized so
that at maximum current at either 25°C or 125°C, the graph
indicates “10”, while trr is normalized to be “1” at maximum
current at either temperature.

Capacitance values are normalized for I

Cmax

. Due to poor
scaling, gate charge and thermal characteristics are shown
separately for each module.

Many issues must be considered when doing PCB layout.
Figure 19 shows the footprint of a module, allowing for
reasonable tolerances. A polarizing post is provided near pin
1 to ensure that the module is properly inserted during final
assembly. When laying out traces, two issues are of primary
importance: current carrying capacity and voltage clearance.
Many techniques may be used to maximize both, including
using traces on both sides of the PCB to double total copper
thickness, providing cut–outs in high–current traces near
high–voltage pins, and even removing portions of the board
to increase “over–the–surface” creapage distance. Some
additional advantage may be gained by potting the entire
board assembly in a good dielectric. Consult appropriate
regulatory standards, such as UL 840, for more details on
high–voltage creapage and clearance.

12345

Q1

D1

Q2

D2

D3

D4

678

D5

D6

16 15 14 13 12 11 10 9

Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out

Q3

Q4

Q5

Q6

MHPM6B10A60D MHPM6B20A60D

8

MOTOROLA

RECOMMENDED PCB LAYOUT

VIEW OF BOARD FROM HEAT SINK

(All Dimensions Typical)

OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)

1.530

0.250

1.350

0.250

PACKAGE “SHADOW”

PLATED THRU–HOLES

(x16)

3.500

0.270

PIN 1

0.265

NON–PLA TED THRU–HOLE

0.140

0.175

0.065

0.625

0.1750.175

0.625

0.450

KEEP–OUT ZONES (x4)

0.270

Figure 19. Package Footprint

NOTES:

1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.

2. Dimension of plated thru–holes indicates finished hole size after plating.

3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.

9

MHPM6B10A60D MHPM6B20A60D

MOTOROLA

P ACKAGE DIMENSIONS

PRELIMINARY

12

16 1531441351261171089

3.000

3.500

1.350

0.154

1.000

0.475

0.350

0.650

1.530

0.115

0.250 0.050

0.150

MHPM6B10A60D MHPM6B20A60D

10

MOTOROLA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

Mfax is a trademark of Motorola, Inc.

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MHPM6B10A60D/D

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