How it Works
Datasheet
Loading...
MH16S72BDFA-8
Datasheet (Mitsubishi)
56 pgs981.03 Kb0

Datasheet MH16S72BDFA-8, MH16S72BDFA-7 Datasheet (Mitsubishi)

Download
Page 1
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
APPLICATION
easy interchange or addition of module.
FEATURES
Type name
6ns (CL = 2, 3)
MH16S72BDFA-7
Frequency
[component level]
100MHz
6ns (CL = 3)
MH16S72BDFA-8
100MHz
PRELIMINARY
Some of contents are subject to change without notice.
The MH16S72BDFA is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen industry standard 16M x 4 Synchronous DRAMs in TSOP. The TSOP on a card edge dual in-line package provides any application where high densities and large of quantities memory are required. This is a socket-type memory module ,suitable for
CLK
Max.
Access Time
MITSUBISHI LSIs
MH16S72BDFA-7, -8
85pin
94pin
1pin
10pin
Utilizes industry standard 16M X 4 Synchronous DRAMs in TSOP package , industry standard Resistered buffer in TSSOP package and industry standard PLL in TSSOP package Single 3.3V +/- 0.3V supply LVTTL Interface Burst length 1/2/4/8/Full Page(programmable) Burst Write / Single Write(programmable) Auto precharge / All bank precharge controlled by A10 Auto refresh and Self refresh 4096 refresh cycles every 64ms
Discrete IC and module design conform to PC/100 specification. (module Spec. Rev. 1.2 and SPD 1.2A)
Main memory unit for computers, Microcomputer memory.
95pin
124pin
125pin
168pin
11pin
40pin
41pin
84pin
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
1
Page 2
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
PIN NO. PIN NAME PIN NO. PIN NAME PIN NO. PIN NAME PIN NO. PIN NAME
1 2 DQ0 44 NC 3 DQ1 45 /S2 4 DQ2 46 DQMB2 5 DQ3 47 DQMB3 6 VDD 48 NC 7 DQ4 49 VDD 8 DQ5 50 NC
9 DQ6 51 NC 10 DQ7 52 11 DQ8 53 12 13 DQ9 55 DQ16 14 DQ10 56 DQ17 15 DQ11 57 DQ18 16 DQ12 58 DQ19 17 DQ13 59 VDD 18 VDD 60 DQ20 19 DQ14 61 NC 20 DQ15 62 21 22 23 VSS 65 DQ21 24 NC 66 DQ22 25 NC 67 DQ23 26 VDD 68 27 28 DQMB0 70 DQ25 29 DQMB1 71 DQ26 30 /S0 72 DQ27 31 NC 73 VDD 32 VSS 74 DQ28 33 A0 75 DQ29 34 A2 76 DQ30 35 A4 77 DQ31 36 A6 78 VSS 37 A8 79 38 39 40 VDD 82 SDA 41 VDD 83 SCL 42 CK0 84 VDD
VSS
VSS
CB0 CB1
/WE
A10 BA1
43
54 VSS
63 64 VSS
69 DQ24
80 NC 81
VSS 85
CB2 CB3
Vref,NC
CKE1
VSS 110
CK2
WP
86 87 88 89 90 91 92 93 94 95 96 97 98
99 100 101 102 103 104 105 106 107 108 109
111 112 113 114 115 116 117 118 119 120 121 122 123 124 125
126
VSS 127 DQ32 128 DQ33 129 DQ34 130 DQMB6 DQ35 131 DQMB7
VDD 132 DQ36 133 VDD DQ37 134 NC DQ38 135 NC DQ39 136 DQ40 137
VSS 138 VSS DQ41 139 DQ48 DQ42 140 DQ49 DQ43 141 DQ50 DQ44 142 DQ51 DQ45 143 VDD
VDD 144 DQ52 DQ46 145 NC DQ47 146
CB4
CB5
VSS 149 DQ53
NC 150 DQ54 NC 151 DQ55
VDD 152 VSS
/CAS 153 DQ56 DQMB4 154 DQ57 DQMB5 155 DQ58
NC
/RAS 157 VDD
VSS 158 DQ60
A1 159 DQ61 A3 160 DQ62 A5 161 DQ63 A7 162 VSS
A9 163 BA0 A11
VDD 166 SA1 CK1 167 SA2
NC
147 148 VSS
156 DQ59
164 NC 165 SA0
168 VDD
VSS
CKE0
NC
NC
CB6 CB7
Vref,NC
REGE
CK3
NC = No Connection
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
2
Page 3
Add
D0
D1D2D3D4D5D6D7
D8D9D10
D11
D12
D13
D14
D15
D16
D17
CKE0
/S0,2
DQM0-7
/W /RAS
/CAS
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
RCKE0
R/S0,2
RDQM0-7
10K
VDD
REGE
DQ0 DQ1
DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
DQ8 DQ9 DQ10
DQ11 DQ12 DQ13 DQ14 DQ15
CB0 CB1 CB2 CB3
DQ16 DQ17
DQ18 DQ19
DQ20 DQ21
DQ22 DQ23
DQ32 DQ33
DQ34 DQ35 DQ36 DQ37 DQ38 DQ39
DQ40 DQ41 DQ42
DQ43 DQ44 DQ45 DQ46 DQ47
CB4 CB5 CB6 CB7
DQ48 DQ49 DQ50 DQ51
DQ52 DQ53
DQ54 DQ55
From PLL
CK0 CK1 - CK3
RCKE0 R/S0 R/S2
MIT-DS-0329-0.0
DQ24 DQ25
DQ26 DQ27
DQ28 DQ29
DQ30 DQ31
PLL
D0-17 D0-4,9-13 D5-8,14-17
Terminated
RDQM 0 RDQM 1 RDQM 2 RDQM 3 RDQM 4 RDQM 5 RDQM 6 RDQM 7
D0-1 D2-4 D5-6 D7-8 D9-10 D11-13 D14-15 D16-17
MITSUBISHI ELECTRIC
DQ56 DQ57 DQ58 DQ59 DQ60 DQ61 DQ62 DQ63
SCL
WP
47K
VDD
VSS
SERIAL PD
A0 A1 A2
SA0 SA1 SA2
19/Jun/1999
SDA
D0 to D17
D0 to D17
3
Page 4
MITSUBISHI LSIs
PIN FUNCTION
Combination of /RAS,/CAS,/W defines basic commands.
the bank to which a command is applied.BA must be set
Register enable:When REGE is low,All control signals and
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CK0
CKE0
/S0,2
/RAS,/CAS,/W
A0-11
Input
Input
Input
Input
Input
Master Clock:All other inputs are referenced to the rising edge of CK
Clock Enable:CKE controls internal clock.When CKE is low,internal clock for the following cycle is ceased. CKE is also used to select auto / self refresh. After self refresh mode is started, CKE E becomes asynchronous input.Self refresh is maintained as long as CKE is low.
Chip Select: When /S is high,any command means No Operation.
A0-11 specify the Row/Column Address in conjunction with BA.The Row Address is specified by A0-11.The Column Address is specified by A0-9.A10 is also used to indicate precharge option.When A10 is high at a read / write command, an auto precharge is performed. When A10 is
BA0-1
DQ0-63 CB0-7
DQM0-7
Vdd,Vss
REGE
Input
Input/Output
Input
Power Supply
Output
high at a precharge command, both banks are precharged. Bank Address:BA0,1 is not simply BA.BA0,1 specifies
with ACT,PRE,READ,WRITE commands Data In and Data out are referenced to the rising edge
of CK Din Mask/Output Disable:When DQMB is high in burst
write.Din for the current cycle is masked.When DQMB is high in burst read,Dout is disabled at the next but one cycle.
Power Supply for the memory mounted module.
address are buffered. (Buffer mode) When REGE is high,All control and address are latched. (Latch mode)
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
4
Page 5
MITSUBISHI LSIs
BASIC FUNCTIONS
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
READ command starts burst read from the active bank indicated by BA.First output
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
The MH16S72BDFA provides basic functions,bank(row)activate,burst read / write, bank(row)precharge,and auto / self refresh.
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and precharge option,respectively. To know the detailed definition of commands please see the command truth table.
CK
/S /RAS /CAS /WE CKE A10
Chip Select : L=select, H=deselect Command Command Command Refresh Option @refresh command Precharge Option @precharge or read/write command
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read(READ) [/RAS =H,/CAS =L, /WE =H]
data appears after /CAS latency. When A10 =H at this command,the bank is deactivated after the burst read(auto-precharge, READA).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be written is set by burst length. When A10 =H at this command, the bank is deactivated after the burst write(auto-precharge, WRITEA).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates burst read / write operation. When A10 =H at this command, both banks are deactivated(precharge all, PREA).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address are generated internally. After this command, the banks are precharged automatically.
MIT-DS-0329-0.0
MITSUBISHI
19/Jun/1999
ELECTRIC
5
Page 6
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Precharge All Bank
COMMAND TRUTH TABLE
MITSUBISHI LSIs
MH16S72BDFA-7, -8
COMMAND
Deselect
No Operation
Row Adress Entry &
Bank Activate
Single Bank Precharge
Column Address Entry
& Write
Column Address Entry
& Write with Auto-
Precharge
Column Address Entry
& Read
Column Address Entry
& Read with Auto
Precharge
MNEMONIC
DESEL
NOP
ACT
PRE
PREA
WRITE
WRITEA
READ
READA
CK
n-1
CK
H H
H
H H
H
H
H
H
/S
n X
X
X
X X
X
X
X
X
/RAS
H L
L
L L
L
L
L
L
X H
L
L L
LH
H
H
H
/CAS
X H
H
H H
H
L
L
L
/WE
X H
H
L L
L
L
H
H
BA
X X
V
V V
V
V
V
V
A10
X X
V
L H
L
H
L
H
A0-9
X X
V
X X
V
V
V
V
Auto-Refresh
Self-Refresh Entry
Self-Refresh Exit
Burst Terminate
Mode Register Set
REFA REFS
REFSX
TERM
MRS
H H
L L
H H
H L
H H
X X
HL
L L
L
LX
H L
H H
L L
L
L L
X H
H L
H H
X H
L L
X X
X X
X L
H =High Level, L = Low Level, V = Valid, X = Don't Care, n = CK cycle number
NOTE:
1.A7-9 = 0, A0-6 = Mode Address
X X
X X
X L
X X
X X
X
V*1
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
6
Page 7
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE
MITSUBISHI LSIs
MH16S72BDFA-7, -8
Current State
IDLE
ROW ACTIVE
READ
/S
/RAS
H L
L L
L L
L L
H L
L L
L
L L
L L
H L
L
L
/CAS X H H
H L
L L
L X
H H
H
H L
L L
L X
H H
H
/WE
X H
H L
H H
L L
X H
H L
L
H H
L L
X H
H
L
X H L
X H
L H
L X
H L
H
L H
L H
L X
H L
H
Address
X X
BA BA,CA,A10
BA,RA BA,A10
X Op-Code,
Mode-Add X X
BA BA,CA,A10
BA,CA,A10
BA,RA BA,A10
X Op-Code,
Mode-Add X
X BA
BA,CA,A10
Command
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
Action
NOP NOP
ILLEGAL*2 ILLEGAL*2
Bank Active,Latch RA NOP*4
Auto-Refresh*5 Mode Register Set*5 NOP
NOP NOP
Begin Read,Latch CA, Determine Auto-Precharge
Begin Write,Latch CA, Determine Auto-Precharge
Bank Active/ILLEGAL*2 Precharge/Precharge All
ILLEGAL ILLEGAL NOP(Continue Burst to END)
NOP(Continue Burst to END) Terminate Burst
Terminate Burst,Latch CA, Begin New Read,Determine
Auto-Precharge*3
MIT-DS-0329-0.0
Terminate Burst,Latch CA,
L
L L
L
L
H
L L
L L
L
H H
L
L
L
BA,CA,A10
BA,RA
H L
BA,A10 X
H
Op-Code,
L
Mode-Add
MITSUBISHI
WRITE/WRITEA
ACT
PRE/PREA
REFA
MRS
Begin Write,Determine Auto­Precharge*3
Bank Active/ILLEGAL*2 Terminate Burst,Precharge
ILLEGAL ILLEGAL
19/Jun/1999
7
ELECTRIC
Page 8
MITSUBISHI LSIs
FUNCTION TRUTH TABLE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
(continued)
Current State
WRITE
READ with
AUTO
PRECHARGE
WRITE with
AUTO
PRECHARGE
/S
/RAS
H L
L
L
L
L L L
L
H L L L
L L
L L
L H
L L L
L L
L L
L
/CAS
X H
H
H
H
L L
L L X
H H H
H L
L L
L X
H H
H H
L L
L L
/WE
X H
H
L
L
H H L
L
X H H L
L H
H L
L X
H H L
L H
H L
L
X H
L
H
L
H L
H L X
H L H
L H
L H
L X
H L
H L
H L
H L
Address X X
BA
BA,CA,A10
BA,CA,A10
BA,RA BA,A10 X
Op-Code, Mode-Add
X X BA BA,CA,A10
BA,CA,A10 BA,RA
BA,A10 X
Op-Code, Mode-Add X X BA
BA,CA,A10 BA,CA,A10 BA,RA
BA,A10 X
Op-Code, Mode-Add
Command
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/READA
WRITE/
WRITEA
ACT
PRE/PREA
REFA
MRS
Action NOP(Continue Burst to END) NOP(Continue Burst to END)
Terminate Burst Terminate Burst,Latch CA,
Begin Read,Determine Auto­Precharge*3 Terminate Burst,Latch CA,
Begin Write,Determine Auto­Precharge*3
Bank Active/ILLEGAL*2 Terminate Burst,Precharge ILLEGAL
ILLEGAL NOP(Continue Burst to END)
NOP(Continue Burst to END) ILLEGAL ILLEGAL
ILLEGAL Bank Active/ILLEGAL*2
ILLEGAL*2 ILLEGAL
ILLEGAL NOP(Continue Burst to END)
NOP(Continue Burst to END) ILLEGAL ILLEGAL
ILLEGAL Bank Active/ILLEGAL*2
ILLEGAL*2 ILLEGAL
ILLEGAL
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
8
Page 9
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State
PRE -
CHARGING
ROW
ACTIVATING
/S
H L L L L
L L
L H
L L
L L
L L
L
/RAS
X H
H H
L L L
L
X H H H L L
L
L
/CAS
X H H L H
H L
L X
H H
L H
H L
L
/WE
X H
L X
H L H
L
X H L X H L
H
L
Address X X BA BA,CA,A10 BA,RA
BA,A10 X
Op-Code, Mode-Add X
X BA
BA,CA,A10 BA,RA
BA,A10 X
Op-Code, Mode-Add
Command
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
Action NOP(Idle after tRP) NOP(Idle after tRP) ILLEGAL*2 ILLEGAL*2 ILLEGAL*2
NOP*4(Idle after tRP) ILLEGAL
ILLEGAL
NOP(Row Active after tRCD NOP(Row Active after tRCD
ILLEGAL*2 ILLEGAL*2
ILLEGAL*2 ILLEGAL*2
ILLEGAL
ILLEGAL
WRITE RE-
COVERING
MIT-DS-0329-0.0
H L
L L
L L L
L
X H H H
L L
L L
X H
H L
H H L
L
X
X
H
X BA
L X
BA,CA,A10 BA,RA
H L
BA,A10 X
H
Op-Code,
L
Mode-Add
MITSUBISHI
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
NOP NOP
ILLEGAL*2 ILLEGAL*2
ILLEGAL*2 ILLEGAL*2 ILLEGAL
ILLEGAL
19/Jun/1999
9
ELECTRIC
Page 10
MH16S72BDFA-7, -8
1. All entries assume that CKE was High during the preceding clock cycle and the current
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE(continued)
MITSUBISHI LSIs
Current State
RE-
FRESHING
MODE
REGISTER
SETTING
/S
H L L L
L L
L
L
H L L L
L L
/RAS
X H H H L L L
L
X H H H L L
/CAS
X H H L
H H
L
L
X H H L
H H
/WE
X H L X H L H
L
X H L X H L
Address X X BA BA,CA,A10
BA,RA BA,A10
X Op-Code,
Mode-Add X X BA BA,CA,A10
BA,RA BA,A10
Command
DESEL
NOP NOP(Idle after tRC)
TBST
READ/WRITE
ACT
PRE/PREA
REFA
MRS
DESEL
NOP
TBST
READ/WRITE
ACT
PRE/PREA
NOP(Idle after tRC)
ILLEGAL ILLEGAL
ILLEGAL ILLEGAL
ILLEGAL
ILLEGAL
NOP(Idle after tRSC) NOP(Idle after tRSC) ILLEGAL ILLEGAL
ILLEGAL ILLEGAL
Action
L
L
L
L
L
L
H
L
X Op-Code,
Mode-Add
REFA
MRS
ILLEGAL
ILLEGAL
ABBREVIATIONS: H = Hige Level, L = Low Level, X = Don't Care BA = Bank Address, RA = Row Address, CA = Column Address, NOP = No Operation
NOTES:
clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state.May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and / or date-integrity are not guaranteed.
MIT-DS-0329-0.0
MITSUBISHI
19/Jun/1999
ELECTRIC
10
Page 11
MH16S72BDFA-7, -8
2. Power-Down and Self-Refresh can be entered only form the All banks idle State.
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
FUNCTION TRUTH TABLE FOR CKE
MITSUBISHI LSIs
Current State
SELF -
REFRESH*1
POWER
DOWN
ALL BANKS
IDLE*2
CK
n-1
CK
n H L
L L L
L L H L L H H H H H H H
X
H H
H H H
L
X
H
L
H
L
L
L
L
L
L
/S
X H
L L L
L X X X X X L H L L L L
/RAS
X X H
H H L X
X X
X X
L X H H H L
/CAS
X X
H H L
X X X X X X L X H H L X
/WE
X X H
L X X X
X X
X X
H X H L X X
Add
X
INVALID Exit Self-Refresh(Idle after tRC)
X
Exit Self-Refresh(Idle after tRC)
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
X
NOP(Maintain Self-Refresh)
X X
INVALID Exit Power Down to Idle
X
NOP(Maintain Self-Refresh)
X X
Refer to Function Truth Table Enter Self-Refresh
X
Enter Power Down
X
Enter Power Down
X
ILLEGAL
X
ILLEGAL
X
ILLEGAL
X
Action
ANY STATE
other than
listed above
L H
H L L
X
X
H
H
X
L
X X X
L
X X
X X
X
X X
X X X
X X
X X
X
Refer to Current State = Power Down
X X
Refer to Function Truth Table Begin CK0 Suspend at Next Cycle*3
X X
Exit CK0 Suspend at Next Cycle*3
X
Maintain CK0 Suspend
ABBREVIATIONS: H = High Level, L = Low Level, X = Don't Care
NOTES:
1. CKE Low to High transition will re-enable CK and other inputs asynchronously. A minimum setup time must be satisfied before any command other than EXIT.
3. Must be legal command.
MIT-DS-0329-0.0
MITSUBISHI
19/Jun/1999
ELECTRIC
11
Page 12
MITSUBISHI LSIs
POWER ON SEQUENCE
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
LENGTH
BURST
LATENCY
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB high and NOP condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500µs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode register(MRS). The mode register stores these date until the next MRS command, which may be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is ready for new command.
CK
/S
MODE
BA0
0
BA1
0
CL 0 0 0 0 0 1 0 1 0 0 1 1
1 0 0 1 0 1
1 1 0 1 1 1
A10
A11
0
0
/CAS LATENCY
A9
WM
A8
0
R R
2
3
R R
R R
A7
0
A6
A5
LTMODE
A4
A3
BT
BURST
TYPE
A2
A1
BL
A0
BA0,1 A11-0
BL
0 0 0 0 0 1
0 1 0 0 1 1
1 0 0 1 0 1 1 1 0 1 1 1
0
1
/RAS /CAS
/WE
BT= 0
1 2
4 8
R R
R
FP
SEQUENTIAL INTERLEAVED
V
BT= 1
1 2
4 8
R R
R R
WRITE
MODE
MIT-DS-0329-0.0
0
1
BURST SINGLE BIT
MITSUBISHI
R:Reserved for Future Use FP: Full Page
ELECTRIC
19/Jun/1999
12
Page 13
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CK
Command
Address
DQ
CL= 3 BL= 4
Initial Address BL
A2
0 0
0 0 1
A1
0 0
1 1
0
A0
0 1
0 1
8
0
Read
Y
/CAS Latency
1
0
2
1
3
2
4
3
5
4
Sequential
3
2
4
3
5
4
6
5
7
6
Q0 Q1 Q2 Q3
Burst Length
Column Addressing
5
4
6
5
7
6
0
7
1
0
7
6
0
7
1
0
2
1
3
2
Burst Type
1
0
0
1
3
2
2
3
5
4
Write
Y
D0 D1
Burst Length
Interleaved
3
2
2
3
1
0
0
1
7
6
D3
D2
5
4
4
5
7
6
6
7
1
0
7
6
6
7
5
4
4
5
3
2
0
1 1
1
-
-
-
-
-
-
MIT-DS-0329-0.0
1 0
1 1
1 0
0 0
1 0
1 1
1 0
-
-
1
6
5
7
6
0
7
1
0
2
1
4
3
2
0
3
1
0
2
1
0
0
7
1
0
2
1
3
2
0
3
1
0 1
2
2
1
3
2 3
4
MITSUBISHI
4
3
5
4 5
6
4
5
7
6
6
7
1
0
0
1
3
2
2
3
1
0 1
0
6
7
5
4
4
5
3
2
2
3
1
0 1
0
0
1
3
2 3
2
19/Jun/1999
2
3
1
0 1
0
13
ELECTRIC
Page 14
MITSUBISHI LSIs
ABSOLUTE MAXIMUM RATINGS
mA
RECOMMENDED OPERATING CONDITION
CAPACITANCE
f=1MHz
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Symbol
Vdd
VI
VO
IO
Pd
Topr
Tstg
(Ta=0 ~ 70°C, unless otherwise noted)
Symbol
Operating Temperature
Parameter
Supply Voltage
Input Voltage
Output Voltage Output Current
Power Dissipation
Storage Temperature
Parameter
Condition
with respect to Vss with respect to Vss
with respect to Vss
Ta=25°C
Min.
Limits
Typ.
Ratings
-0.5 ~ 4.6
-0.5 ~ 4.6
-0.5 ~ 4.6 50
20.7
0 ~ 70
-45 ~ 100
Max.
Unit
V V
V
W
°C °C
Unit
Vdd Vss
VIH
VIL
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
Symbol
CI(A) CI(C)
CI(K)
CI/O
High-Level Input Voltage all inputs
Low-Level Input Voltage all inputs
Input Capacitance, address pin
Input Capacitance, control pin
Input Capacitance, CK0 pin
Input Capacitance, I/O pin
Supply Voltage Supply Voltage
Parameter
Test Condition
Vi=25mVrms
3.0 0
2.0
-0.3
VI = Vss
3.3 0
Limits(max.)
Vdd+0.3
20 20
20 22
3.6 0
0.8
V V
V
V
Unit
pF pF
pF pF
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
14
Page 15
MITSUBISHI LSIs
AVERAGE SUPPLY CURRENT from Vdd
AC OPERATING CONDITIONS AND CHARACTERISTICS
Limits
Limits
(max)
CKE=VILmax,tCLK=15ns
active stanby current
one bank active (discrete)
CKE=VILmax,tCLK=15ns
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Parameter
operating current one bank active (discrete)
precharge stanby current in power-down mode
precharge stanby current in non power-down mode
active stanby current in power-down mode
in non power-down mode
burst current auto-refresh current
self-refresh current
Note:Input signals are changed one time during 30ns.
Symbol
Icc1
Icc2P
Icc2PS
Icc2N Icc2NS
Icc3P Icc3PS
Icc3N Icc3NS
Icc4 Icc5 Icc6
tRC=min.tCLK=min, BL=1, IOL=min
CKE=CLK=VILmax(fixed)
CKE=/CS=VIHmin,tCLK=15ns(Note) CKE=VIHmin,CLK=VILmax(fixed)
CKE=CLK=VILmax(fixed)
CKE=/CS=VIHmin,tCLK=15ns CKE=VIHmin,CLK=VILmax(fixed)
tCLK=min, BL=4, CL=3,IOL=0mAall banks active(discerte)
tRC=min, tCLK=min CKE <0.2V
Test Condition
-7, -8 2005
61 43
421 385 mA
61 43
1015
745 mA 2095 2725
43
Unit
mA
mA mA mA
mA
mA mA
mA mA
mA
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
VOH(DC) VOL(DC)
IOZ
Ii
MIT-DS-0329-0.0
Parameter
High-Level Output Voltage(DC) Low-Level Output Voltage(DC) Off-stare Output Current Input Current
MITSUBISHI
Test Condition
IOH=-2mA IOL=2mA
Q floating VO=0 ~ Vdd VIH=0 ~ Vdd+0.3V
ELECTRIC
Min.
2.4
-5
-10
Max.
Unit
V V
0.4 uA
5
uA
10
19/Jun/1999
15
Page 16
MITSUBISHI LSIs
AC TIMING REQUIREMENTS
Row to Column Delay
tSRX
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted) Input Pulse Levels: 0.8V to 2.0V Input Timing Measurement Level: 1.4V
LATCH MODE
Limits
Symbol
tCLK
tCH
tCL
tT tIS tIH
tRC
tRCD
tRAS
tRP
tWR
tRRD
tCCD
tRSC tREF
Parameter
CK cycle time
CL=3 CL=4
CK High pulse width CK Low pilse width Transition time of CK Input Setup time(all inputs) Input Hold time(all inputs) Row cycle time
Row Active time Row Precharge time Write Recovery time Act to Act Deley time Col to Col Delay time Mode Register Set Cycle time Self Refresh Exit time Refresh Interval time
Min.
-7 Max.
10 10
3 3 ns 1 10 ns 2 ns 0 ns
70 ns 20 50 100000 20 10 20 10 20 10 ns
64
Min.
13 10
4 4 1 2 0
70 20
50 20 10 20 10 20 10
-8 Max.
10
100000
64
Unit
ns ns ns
ns ns ns ns ns ns ns
ms
Note:1 The timing requirements are assumed tT=1ns. If tT is longer than 1ns, (tT-1)ns should be added to the parameter.
CK
Signal
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
1.4V
1.4V
Any AC timing is referenced to the input signal crossing through 1.4V.
19/Jun/1999
16
Page 17
BUFFER MODE
Input Setup time(all inputs)
Row to Column Delay
SWITCHING CHARACTERISTICS
tSRX
Symbol
tCLK
tCH
tCL
tT
Parameter
CK cycle time
CK High pulse width CK Low pilse width
Transition time of CK
tIS tIH
tRC
Input Hold time(all inputs) Row cycle time
tRCD
tRAS
tRP
tWR
tRRD
tCCD
tRSC
Row Active time Row Precharge time Write Recovery time Act to Act Deley time Col to Col Delay time Mode Register Set Cycle time Self Refresh Exit time
tREF
Refresh Interval time
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Limits
CL=2 CL=3
-7
Min.
10 10
3 3 ns 1 7 ns 0 ns
70 20 50 100000 20 10 20 10 20 10 ns
Max.
10
64
Min.
-8
Unit
Max.
13 10 ns
4 4 1 7
0 70 20
50 20 10 20 10 20 10
10
100000
64
ns ns ns
ns ns ns ns ns ns ns ns
ms
Note:1 The timing requirements are assumed tT=1ns. If tT is longer than 1ns, (tT-1)ns should be added to the parameter.
(Ta=0 ~ 70°C, Vdd = 3.3 +/- 0.3V, Vss = 0V, unless otherwise noted)
LATCH MODE
Limits
Symbol
tAC
tOH
tOLZ
tOHZ
Parameter
Access time from CK Output Hold time
from CK Delay time, output low
impedance from CK
Delay time, output high
impedance from CK
CL=3 CL=4
Min.
3 0
3
-7 Max.
6 6
6
Min.
3 0
3
-8 Max.
7
6
6
Unit
ns
ns ns
ns
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
17
Page 18
1.4V
1.4V
BUFFER MODE
Symbol
tAC
Parameter
Access time from CK
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Limits
Unit
ns
CL=2 CL=3
Min.
-7 Max.
6 6
Min.
-8 Max.
7 6
tOH
from CK Delay time, output low
Output Hold time
tOLZ
impedance from CK
Delay time, output high
tOHZ
impedance from CK
Output Load Condition
50½
VOUT
50pF
VTT=1.4V
3 0
3
CK
Output Timing Measurement Reference Point
3 0
6
DQ
3
6
ns ns
ns
1.4V
1.4V
MIT-DS-0329-0.0
CK
DQ
tAC
tOH
MITSUBISHI ELECTRIC
tOHZ
19/Jun/1999
18
Page 19
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
WRITE CYCLE (single bank)
1
0
tRCD
3
2
tRAS
5
4
tRC
6
tWR
7
9
8
tRP
BL=4,Buffer mode(REGE="L")
10
11
12
tRCD
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0 D0
WRITE#0
PRE#0
X
X
X
0
ACT#0
Italic parameter indicates minimum case
Y
0
D0 D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
19
Page 20
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
WRITE CYCLE (dual bank) BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRRD
tRCD
3
2
4
tRAS
5
tRC
6
tWR
7
9
8
10
tRP
tWR
11
12
tRRD
13
tRCD
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 1
1
D0 D0 D0 D0
WRITE#0
ACT#1
Y
0
D1 D1 D1 D1
PRE#0
WRITE#1
Italic parameter indicates minimum case
X
X
X
0
ACT#0
X
X
X
1
2
ACT#2
PRE#1
Y
0
D0 D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
20
Page 21
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
WRITE CYCLE (single bank)
1
0
tRCD
3
2
tRAS
5
4
tRC
6
tWR
7
9
8
tRP
BL=4,Lacth mode(REGE="H")
10
11
12
tRCD
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0 D0
WRITE#0
PRE#0
X
X
X
0
ACT#0
Italic parameter indicates minimum case
Y
0
D0 D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
21
Page 22
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
WRITE CYCLE (dual bank) BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRRD
tRCD
3
2
4
tRAS
5
tRC
6
tWR
7
9
8
10
tRP
tWR
11
12
tRRD
13
tRCD
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 1
1
D0 D0 D0 D0
WRITE#0
ACT#1
Y
0
D1 D1 D1 D1
PRE#0
WRITE#1
Italic parameter indicates minimum case
X
X
X
0
ACT#0
X
X
X
1
2
ACT#2
PRE#1
Y
0
D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
22
Page 23
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
READ CYCLE (single bank)
1
0
tRCD
3
2
tRAS tRP
5
4
tRC
7
6
8
BL=4,CL=3,Buffer mode(REGE="L")
9
10
11
12
tRCD
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
DQM read latency =2
Y
0 0
CL=3
Q0 Q0 Q0 Q0
READ#0
READ to PRE ≥ BL allows full data out
PRE#0
X
X
X
0
ACT#0
Y
0
Q0 Q0
READ#0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
23
Page 24
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,CL=3,Buffer mode(REGE="L")READ CYCLE (dual bank)
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRRD
tRCD
3
2
5
4
tRAS tRP
DQM read latency =2
6
tRC
7
9
8
10
11
12
tRRD
13
tRCD
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 0
1
CL=3
READ#0
ACT#1
Y
1
CL=3
Q0 Q0 Q0 Q0
PRE#0
READ#1
X
X
X
0
Q1 Q1 Q1 Q1
ACT#0
PRE#1
X
X
X
21
ACT#2
Y
0
Q0
READ#0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
24
Page 25
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
READ CYCLE (single bank)
1
0
tRCD
3
2
tRAS tRP
5
4
tRC
7
6
9
8
BL=4, CL=3,Latch mode(REGE="H")
10
11
12
tRCD
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
DQM read latency =3
Y
0 0
CL=3
Q0 Q0 Q0 Q0
READ#0
READ to PRE ≥ BL allows full data out
PRE#0
X
X
X
0
ACT#0
Y
0
Q0 Q0
READ#0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
25
Page 26
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,CL=3,Latch mode(REGE="H")READ CYCLE (dual bank)
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRRD
tRCD
3
2
5
4
tRAS tRP
DQM read latency =3
6
tRC
7
9
8
10
11
12
tRRD
13
tRCD
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 0
1
CL=3
READ#0
ACT#1
Y
1
CL=3
Q0 Q0 Q0 Q0
PRE#0
READ#1
X
X
X
0
Q1 Q1 Q1 Q1
ACT#0
PRE#1
X
X
X
21
ACT#2
Y
0
Q0
READ#0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
26
Page 27
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst WRITE (multi bank) with AUTO-PRECHARGE BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
tRRD
2
tRCD
4
3
6
5
tRC
BL-1+ tWR + tRP
7
8
10
9
BL-1+ tWR + tRP
11
tRCD
12
tRRD
13
14
15
16
tRCD
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
X
X
X
1
ACT#1
Y
0 1
D0 D0 D0 D0
WRITE#0 with AutoPrecharge
Y X
D1 D1 D1 D1
ACT#0 WRITE#1 with AutoPrecharge
Y
X
X
X
0
WRITE#0
X
X
0
1
D0 D0 D0 D0
ACT#1
WRITE#1
Y
1
D1
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
27
Page 28
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst WRITE (multi bank) with AUTO-PRECHARGE BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
tRRD
2
tRCD
4
3
6
5
tRC
BL-1+ tWR + tRP
7
8
10
9
BL-1+ tWR + tRP
11
tRCD
12
tRRD
13
14
15
16
tRCD
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
X
X
X
1
ACT#1
Y
0 1
D0 D0 D0 D0
WRITE#0 with AutoPrecharge
Y X
D1 D1 D1 D1
ACT#0 WRITE#1 with AutoPrecharge
Y
X
X
X
0
WRITE#0
X
X
0
1
D0 D0 D0 D0
ACT#1
WRITE#1
Y
1
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
28
Page 29
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst READ (multi bank) with AUTO-PRECHARGE BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
tRRD
tRCD
2
4
3
6
5
tRC
BL+tRP
DQM read latency =2
8
7
10
9
BL+tRP
11
12
tRRD
tRCD
13
14
15
16
tRCD
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
ACT#1
Y
X
X
X
0
1
CL=3
READ#0 with Auto-Precharge
Y
1
CL=3
Q0 Q0 Q0 Q0
READ#1 with Auto-Precharge
X
X
X
0
Q1 Q1 Q1 Q1
ACT#0
READ#0
Y
0
X
X
X
1
CL=3
ACT#1
Q0
Y
1
Q0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
29
Page 30
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Burst READ (multi bank) with AUTO-PRECHARGE BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
tRRD
tRCD
2
4
3
6
5
tRC
BL+tRP
DQM read latency =3
8
7
10
9
BL+tRP
11
12
tRRD
tRCD
13
14
15
16
tRCD
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
ACT#1
Y
X
X
X
0
1
CL=3
READ#0 with Auto-Precharge
Y
1
CL=3
Q0 Q0 Q0 Q0
READ#1 with Auto-Precharge
X
X
X
0
Q1 Q1 Q1 Q1
ACT#0
READ#0
Y
0
X
X
X
1
CL=3
ACT#1
Q0
Y
1
Q0
MIT-DS-0329-0.0
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
30
Page 31
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
Page Mode Burst Write (multi bank)
1
0
tRRD
tRCD
3
2
5
4
7
6
BL=4,Buffer mode(REGE="L")
9
8
10
11
12
13
14
15
16
17
DQM
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Y Y
D0 D0 D0 D0 D0 D0 D0
WRITE#0
Y
1
D1 D1 D1 D1
WRITE#1
0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
31
Page 32
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
Page Mode Burst Write (multi bank)
1
0
tRRD
tRCD
3
2
5
4
7
6
BL=4,Latch mode(REGE="H")
9
8
10
11
12
13
14
15
16
17
DQM
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0 0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Y Y
D0 D0 D0 D0 D0 D0
WRITE#0
Y
1
D1 D1 D1 D1
WRITE#0
WRITE#1
0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
32
Page 33
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Page Mode Burst Read (multi bank)
1
0
tRRD
tRCD
3
2
5
4
7
6
BL=4,Buffer mode(REGE="L")
9
8
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
DQM read latency=2
Y
X
X
X
0 0
1
CL=3
READ#0
ACT#1
Y Y
CL=3
Q0 Q0 Q0
Q0
READ#0
Y
1
CL=3
Q0 Q0 Q0 Q0
READ#1
0
Q1 Q1 Q1 Q1
READ#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
33
Page 34
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Page Mode Burst Read (multi bank)
1
0
tRRD
tRCD
3
2
5
4
7
6
BL=4,Latch mode(REGE="H")
9
8
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
DQM read latency=3
Y
X
X
X
0 0
1
CL=3
READ#0
ACT#1
Y Y
CL=3
Q0 Q0 Q0
Q0
READ#0
Y
1
CL=3
Q0 Q0 Q0 Q0
READ#1
0
Q1 Q1 Q1 Q1
READ#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
34
Page 35
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Write Interrupted by Write / Read
0
1
tRRD
2
tRCD
4
3
5
6
tCCD
7
BL=4,Buffer mode(REGE="L")
8
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Burst Write can be interrupted by Write or Read of any active bank.
WRITE#0
Y Y
0 0 0
D0 D0 D1 D1 Q0 Q0 Q0
WRITE#0
Y
1
WRITE#1
Y
CL=3
Q0
READ#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
35
Page 36
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Write Interrupted by Write / Read
0
1
tRRD
2
tRCD
4
3
5
6
tCCD
7
BL=4,Latch mode(REGE="H")
8
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
REGE
DQ
X
X
X
0
ACT#0
Y
X
X
X
0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Burst Write can be interrupted by Write or Read of any active bank.
WRITE#0
Y Y
0 0 0
WRITE#0
Y
1
D0 D0 D1 D1 Q0 Q0 Q0
WRITE#1
Y
CL=3
Q0
READ#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
36
Page 37
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Read Interrupted by Read / Write
1
0
tRRD
tRCD
3
2
5
4
6
BL=4,Buffer mode(REGE="L")
7
9
8
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
X
X
X
1
ACT#1
DQM read latency=2
Y
0 0
READ#0
READ#0
Y Y
Y
0
Q0 Q0 Q0
Q0
READ#0
Y
1
READ#1
Y
0
Q0 Q0 Q1 Q1
READ#0
blank to prevent bus contention
Q0 D0 D0
0
WRITE#0
MIT-DS-0329-0.0
Burst Read can be interrupted by Read or Write of any active bank.
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
37
Page 38
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Read Interrupted by Read / Write
1
0
tRRD
tRCD
3
2
5
4
6
BL=4,Latch mode(REGE="H")
7
9
8
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
X
X
X
1
ACT#1
DQM read latency=3
Y
0 0
READ#0
READ#0
Y Y
Y
0
Q0 Q0 Q0
Q0
READ#0
Y
1
READ#1
Y
0
Q0 Q0 Q1 Q1
READ#0
blank to prevent bus contention
Q0 D0
0
WRITE#0
MIT-DS-0329-0.0
Burst Read can be interrupted by Read or Write of any active bank.
Italic parameter indicates minimum case
MITSUBISHI ELECTRIC
19/Jun/1999
38
Page 39
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Write Interrupted by Precharge
0
1
tRRD
2
tRCD
4
3
6
5
BL=4,Buffer mode(REGE="L")
8
7
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
X
X
X
0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Burst Write is not interrupted by Precharge of the other bank.
WRITE#1
Y
0
1
PRE#1
Burst Write is interrupted by Precharge of the same bank.
1 1
D1 D1 D1 D1 D1
PRE#0
X
X
X
1
ACT#1
Y
WRITE#1
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
39
Page 40
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Write Interrupted by Precharge
0
1
tRRD
2
tRCD
4
3
6
5
BL=4,Latch mode(REGE="H")
8
7
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
X
X
X
0
1
D0 D0 D0 D0
WRITE#0
ACT#1
Burst Write is not interrupted by Precharge of the other bank.
WRITE#1
Y
1 1
PRE#0
1
0
D1 D1 D1 D1 D1
PRE#1
Burst Write is interrupted by Precharge of the same bank.
X
X
X
1
ACT#1
Y
WRITE#1
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
40
Page 41
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Read Interrupted by Precharge
0
1
tRRD
tRCD
2
4
3
6
5
BL=4,Buffer mode(REGE="L")
8
7
10
9
11
tRP
12
13
14
tRCD
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
DQM read latency=2
Y
X
X
X
0
1
READ#0
ACT#1
Burst Read is not interrupted by Precharge of the other bank.
Y
1
Q0 Q0 Q0
Q0
READ#1
0
PRE#0
X
X
X
1
Q1 Q1
PRE#1
Burst Read is interrupted by Precharge of the same bank.
1
ACT#1
Y
1
READ#1
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
41
Page 42
MITSUBISHI LSIs
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
Read Interrupted by Precharge
0
1
tRRD
tRCD
2
4
3
6
5
BL=4,Latch mode(REGE="H")
8
7
10
9
11
tRP
12
13
14
tRCD
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
DQM read latency=3
Y
X
X
X
0
1
READ#0
ACT#1
Burst Read is not interrupted by Precharge of the other bank.
Y
1
Q0 Q0 Q0
Q0
READ#1
0
PRE#0
X
X
X
1
Q1 Q1
PRE#1
Burst Read is interrupted by Precharge of the same bank.
1
ACT#1
Y
1
READ#1
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
42
Page 43
MITSUBISHI LSIs
Mode Register Setting
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
3
2
5
4
tRC
7
6
9
8
10
tRSC
11
12
13
tRCD
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
Auto-Ref (last of 8 cycles)
M
0
Mode Register Setting
X
X
X
0
ACT#0
Italic parameter indicates minimum case
Y
0
D0
D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
43
Page 44
MITSUBISHI LSIs
Auto-Refresh @BL=4
/WE
After tRC from Auto-Refresh,
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
3
2
5
4
tRC
7
6
9
8
10
11
tRCD
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
Auto-Refresh Before Auto-Refresh,
all banks must be idle state.
X
X
X
0
ACT#0
all banks are idle state.
Y
0
D0
D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
44
Page 45
MITSUBISHI LSIs
Self-Refresh
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
CKE must be low to maintain Self-Refresh
3
2
CLK can be stopped
5
4
7
6
tSRX
9
8
10
11
12
tRC
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
Self-Refresh Entry
Before Self-Refresh Entry, all banks must be idle state.
Self-Refresh Exit
After tRC from Self-Refresh Exit, all banks are idle state.
X
X
X
0
ACT#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
45
Page 46
MITSUBISHI LSIs
DQM Write Mask @BL=4
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
2
tRCD
4
3
6
5
8
7
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0 D0
WRITE#0
Y
masked
WRITE#0
Y
0
masked
D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
46
Page 47
MITSUBISHI LSIs
DQM Write Mask @BL=4
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
2
tRCD
4
3
6
5
8
7
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0 D0
WRITE#0
Y
WRITE#0
masked
Y
0
masked
D0 D0 D0
WRITE#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
47
Page 48
MITSUBISHI LSIs
DQM Read Mask @BL=4 CL=3
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
2
tRCD
4
3
6
5
8
7
DQM read latency=2
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
Q0 Q0 Q0 Q0
READ#0
Y
READ#0
Y
0
masked
READ#0
masked
Q0 Q0 Q0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
48
Page 49
MITSUBISHI LSIs
DQM Read Mask @BL=4 CL=3
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
0
1
2
tRCD
4
3
6
5
8
7
DQM read latency=3
10
9
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
Q0 Q0 Q0 Q0
READ#0
Y
READ#0
Y
0
masked
READ#0
masked
Q0 Q0 Q0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
49
Page 50
MITSUBISHI LSIs
Power Down
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
CLK
/CS
/RAS
/CAS
CKE
DQM
0
2
1
4
3
Standby Power Down
6
5
8
7
CKE latency=1
9
10
11
12
14
13
Active Power Down
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
Precharge All
X
X
X
0
ACT#0
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
Italic parameter indicates minimum case
19/Jun/1999
50
Page 51
MITSUBISHI LSIs
CLK Suspend @BL=4 CL=3
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Buffer mode(REGE="L")
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRCD
CKE latency=1
3
2
5
4
7
6
9
8
CKE latency=1
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0D0
WRITE#0
CLK suspended
Y
Q0 Q0 Q0 Q0
READ#0
CLK suspended
Italic parameter indicates minimum case
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
51
Page 52
MITSUBISHI LSIs
CLK Suspend @BL=4 CL=3
/WE
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
BL=4,Latch mode(REGE="H")
CLK
/CS
/RAS
/CAS
CKE
DQM
1
0
tRCD
CKE latency=2
3
2
5
4
7
6
9
8
CKE latency=2
10
11
12
13
14
15
16
17
A0-9
A10
A11
BA0,1
DQ
REGE
X
X
X
0
ACT#0
Y
0 0
D0 D0 D0D0
WRITE#0
CLK suspended
Y
Q0 Q0 Q0 Q0
READ#0
CLK suspended
Italic parameter indicates minimum case
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
52
Page 53
MITSUBISHI LSIs
Serial Presence Detect Table I
SDRAM Cycletime at Max. Supported CAS Latency (CL).
ECC
Minimum Clock Delay,Back to Back Random Column Addresses
1/2/4/8/Full page
buffered,registered
Precharge All,Auto precharge
Write1/Read Burst
SDRAM Access form Clock(2nd highest CAS latency)
SDRAM Access form Clock(3rd highest CAS latency)
-8-8-7
-7
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Byte Function described SPD enrty data SPD DATA(hex)
0 Defines # bytes written into serial memory at module mfgr 128 80 1 Total # bytes of SPD memory device 256 Bytes 08 2 Fundamental memory type SDRAM 04 3 # Row Addresses on this assembly A0-A11 0C 4 # Column Addresses on this assembly 5 # Module Banks on this assembly 6 Data Width of this assembly... 7 ... Data Width continuation 0 00 8 Voltage interface standard of this assembly LVTTL 01 9
Cycle time for CL=3
10 SDRAM Access from Clock
tAC for CL=3 11 DIMM Configuration type (Non-parity,Parity,ECC) 12 Refresh Rate/Type self refresh(15.625uS) 80 13 SDRAM width,Primary DRAM 14 Error Checking SDRAM data width 15 16 Burst Lengths Supported 17 # Banks on Each SDRAM device 4bank 04 18 CAS# Latency 2/3 06
19 CS# Latency 0 01 20 Write Latency 0 01
21 SDRAM Module Attributes 22 SDRAM Device Attributes:General
23 SDRAM Cycle time(2nd highest CAS latency)
Cycle time for CL=2
24
tAC for CL=2
25 SDRAM Cycle time(3rd highest CAS latency) N/A 00 26
A0-A9 0A
1BANK 01
x72 48
10ns
6ns 60
x4 04 x4 04
1 01
10ns
13ns D0
6ns 60 7ns 70
N/A 00
A0
02
8F
1F
0E A0
27 Precharge to Active Minimum 20ns 14
28 Row Active to Row Active Min. 20ns 14
29 RAS to CAS Delay Min 20ns 14
30 Active to Precharge Min 50ns 32
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
53
Page 54
MITSUBISHI LSIs
Serial Presence Detect Table II
4D483136533732424446412D372020202020
4D483136533732424446412D382020202020
-8
-7
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
31 Density of each bank on module
32
33 Command and Address signal input hold time
34 Data signal input setup time 2ns
35 Data signal input hold time
36-61
62 SPD Revision 63 Checksum for bytes 0-62
64-71 Manufactures Jedec ID code per JEP-108E MITSUBISHI 1CFFFFFFFFFFFFFF
72 Manufacturing location Miyoshi,Japan 01
73-90 Manufactures Part Number
Command and Address signal input setup time 2ns 20
Superset Information (may be used in future) option 00
128MByte 20
1ns 10
1ns 10
rev 1.2A 12
Check sum for -7 3F
Check sum for -8
Tajima,Japan 02
NC,USA 03
Germany 04 MH16S72BDFA-7 MH16S72BDFA-8
20
7F
91-92 Revision Code PCB revision rrrr 93-94 Manufacturing date year/week code yyww 95-98 Assembly Serial Number serial number ssssssss
99-125 Manufacture Specific Data option 00
126 Intetl specification frequency
127 Intel specification CAS# Latency support
128+ Unused storage locations open 00
100MHz 64
CL=2/3,AP,CK0 CL=3,AP,CK0
8F 8D
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
54
Page 55
MITSUBISHI LSIs
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
133.35 3
8.89
11.43
3
24.495
6.35
36.83
42.18
6.35
1.27
54.61
127.35
43.18
3.9Max
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
1.27
19/Jun/1999
55
Page 56
MITSUBISHI LSIs
non-flammable material or (iii) prevention against any malfunction or mishap.
1.These materials are intended as a reference to assist our customers in the
the products contained therein.
MH16S72BDFA-7, -8
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,but there is always the possibility that trouble may occur with them. Trouble with semiconductors consideration to safety when making your circuit designs,with appropriate measures such as (i) placement of substitutive,auxiliary circuits,(ii) use of
Notes regarding these materials
selection of the Mitsubishi semiconductor product best suited to the customer's application;they do not convey any license under any intellectual property rights,or any other rights,belonging to Mitsubishi Electric Corporation or a third party.
2.Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights,originating in the use of any product data,diagrams,charts or circuit application examples contained in these materials.
3.All information contained in these materials,including product data, diagrams and charts,represent information on products at the time of publication of these materials,and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein.
4.Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for special applications,such as apparatus or systems for transportation, vehicular,medical,aerospace,nuclear,or undersea repeater use.
5.The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials.
6.If these products or technologies are subject the Japanese export control restrictions,they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
7.Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or
MIT-DS-0329-0.0
MITSUBISHI ELECTRIC
19/Jun/1999
56
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use