Page 1
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit
withstand time s uch as M otor Control Drives. Fast s witching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–264 Package (TO–3PBL)
• High Speed E
off
: 160 mJ per Amp typical at 125°C
• High Short Circuit Capability – 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
1200 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) V
CGR
1200 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
28
20
56
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
174
1.39
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
t
sc
10
m
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θJC
R
θJC
R
θJA
0.7
1.1
35
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGY20N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–264
20 A @ 90°C
28 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340G–02, Style 5
TO–264
Motorola Preferred Device
G
C
E
C
E
G
Motorola, Inc. 1996
Page 2
MGY20N120D
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
BV
CES
1200
—
—
870
—
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
V
CE(on)
—
—
—
3.00
2.36
2.90
3.54
—
4.99
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ies
— 1876 — pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
C
oes
— 208 —
Transfer Capacitance
f = 1.0 MHz)
C
res
— 31 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
d(on)
— 88 — ns
Rise Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
t
r
— 103 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 25°C)
t
d(off)
— 190 —
Fall Time
m
H
RG = 20 Ω, TJ = 25°C)
Energy losses include “tail”
t
f
— 284 —
Turn–Off Switching Loss E
off
— 1.65 3.75 mJ
Turn–On Switching Loss E
on
— 2.42 7.68
Total Switching Loss E
ts
— 4.07 11.43
Turn–On Delay Time
t
d(on)
— 83 — ns
Rise Time
(VCC = 720 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH
t
r
— 107 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH
RG = 20 Ω, TJ = 125°C)
t
d(off)
— 216 —
Fall Time
m
H
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
t
f
— 494 —
Turn–Off Switching Loss E
off
— 3.19 — mJ
Turn–On Switching Loss E
on
— 4.26 —
Total Switching Loss E
ts
— 7.45 —
Q
T
— 63 — nC
(VCC = 720 Vdc, IC = 20 Adc,
V
= 15 Vdc)
Q
1
— 20 —
VGE = 15 Vdc)
Q
2
— 27 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125°C)
(IEC = 20 Adc)
V
FEC
—
—
—
2.92
1.73
3.67
3.59
—
4.57
Vdc
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)
Gate Charge
Page 3
MGY20N120D
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
t
rr
— 114 —
F
= 20 Adc, VR = 720 Vdc,
t
a
— 74 —
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs)
t
b
— 40 —
Reverse Recovery Stored Charge Q
RR
— 0.68 — µC
t
rr
— 224 —
F
= 20 Adc, VR = 720 Vdc,
t
a
— 149 —
(IF = 20 Adc, VR = 720 Vdc,
dIF/dt = 150 A/µs, TJ = 125°C)
t
b
— 75 —
Reverse Recovery Stored Charge Q
RR
— 2.40 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
Figure 1. Output Characteristics, TJ = 25°C Figure 2. Output Characteristics, TJ = 125°C
Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
TJ = 25°C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
840 2 6
40
10
VCE = 10 V
250
µ
s PULSE WIDTH
TJ = 125°C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
20
0
15865 10
25°C
VGE = 15 V
250
µ
s PULSE WIDTH
TJ, JUNCTION TEMPERATURE (
°
C)
1
150500–50 100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC = 20 A
40
15 A
12
10 A
2
3
4
50
60
14
60
VGE = 20 V
TJ = 125°C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
840 2 6
40
10
50
60
97 11 13
Reverse Recovery Time
(I
Reverse Recovery Time
(I
ns
ns
Page 4
MGY20N120D
4
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter and Collector–to–Emitter
Voltage versus Total Charge
C
oes
10000
10
25201550
Qg, TOTAL GATE CHARGE (nC)
16
8
0
70200
C, CAPACITANCE (pF)
10
TJ = 25°C
C
res
C
ies
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
Q
1
Q
2
TJ = 25°C
IC = 20 A
100
6040
12
1000
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
RG, GATE RESISTANCE (OHMS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
4
2
50302010 40
3
VCC = 720 V
VGE = 15 V
TJ = 25°C
IC = 25 A
TC, CASE TEMPERATURE (°C)
TOTAL SWITCHING ENERGY LOSSES (mJ)
1507525
0
100
4
VCC = 720 V
VGE = 15 V
RG = 20
Ω
50 125
IC = 20 A
15 A
10 A
15 A
10 A
5
3
1
2
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
4
20181410
5
3
VCC = 720 V
VGE = 15 V
RG = 20
Ω
TJ = 125°C
1
16
2
12
Figure 5b. High Voltage Capacitance
Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
C
oes
10
20015050
C, CAPACITANCE (pF)
100
TJ = 25°C
C
res
C
ies
100
1000
VGE = 0 V
10000
14
6
2
10
6515 553510 50305 4525
6
5
1
0
352515 45
Page 5
MGY20N120D
5
Motorola TMOS Power MOSFET Transistor Device Data
I
C
, COLLECTOR–TO–EMITTER CURRENT (A)
VGE = 15 V
RGE = 20
Ω
TJ = 125°C
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
10001
1
10010
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
R
θ
JC
(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
Figure 12. Thermal Response
TJ = 25°C
VFM, FORWARD VOLTAGE DROP (VOLTS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
30
0
4310 2
40
20
10
TJ = 125°C
F
5
Page 6
MGY20N120D
6
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 340G–02
TO–264
ISSUE E
DIMAMIN MAX MIN MAX
INCHES
2.8 2.9 1.102 1.142
MILLIMETERS
B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.0 11.4 0.433 0.449
N 3.95 4.75 0.156 0.187
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.15 2.35 0.085 0.093
U 6.1 6.5 0.240 0.256
W 2.8 3.2 0.110 0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 5:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
0.25 (0.010) MT B
M
J
R
H
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010) MY Q
S
1 2 3
–B–
–Q–
–Y–
–T–
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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Opportunity/Affirmative Action Employer.
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MGY20N120D/D
*MGY20N120D/D*
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