Datasheet MGW21N60ED Datasheet (MOTOROLA)



SEMICONDUCTOR TECHNICAL DATA

  

   

N–Channel Enhancement–Mode Silicon Gate

Order this document

by MGW21N60ED/D



This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera­ture short circuit capability and a low V

. It also provides fast

CE(on)

switching characteristics and results in efficient operation at high

IGBT IN TO–247

21 A @ 90°C
31 A @ 25°C

600 VOL TS

SHORT CIRCUIT RATED

ON–VOLTAGE

frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.

• Industry Standard TO–247 Package

• High Speed: E

= 65 mJ/A typical at 125°C

off

C

• High Voltage Short Circuit Capability – 10 ms minimum at

125°C, 400 V

• Low On–Voltage — 2.1 V typical at 20 A, 125°C

• Soft Recovery Free Wheeling Diode is included in the Package

• Robust High Voltage Termination

G

G

C

E

• ESD Protection Gate–Emitter Zener Diodes

E

MAXIMUM RATINGS

Collector–Emitter Voltage V
Collector–Gate Voltage (RGE = 1.0 MΩ) V
Gate–Emitter Voltage — Continuous V
Collector Current — Continuous @ TC = 25°C

Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)

Total Power Dissipation @ TC = 25°C

Derate above 25°C
Operating and Storage Junction Temperature Range TJ, T
Short Circuit Withstand Time

(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
Thermal Resistance — Junction to Case – IGBT

Thermal Resistance — Junction to Diode
Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
Mounting Torque, 6–32 or M3 screw

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

(TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

CES

CGR

I

C25

I

C90

I

CM
P

t

R

θJC

R

θJC

R

θJA

GE

D

stg

sc

L

CASE 340K–01

STYLE 4

TO–247 AE

600 Vdc
600 Vdc

±20 Vdc

31
21
42

142

1.14

–55 to 150 °C

10

0.88

1.4
45

260 °C

10 lbfSin (1.13 NSm)

Adc

Apk

Watts

W/°C

m

s

°C/W

Motorola IGBT Device Data

 Motorola, Inc. 1997

1

MGW21N60ED

)

f = 1.0 MHz)

)

R

G

Ω)

R

G

T

J

125 C)

)

V

GE

Vdc)

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 25 µAdc)

T emperature Coef ficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) BV
Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc)

(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I

ON CHARACTERISTICS (1)

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 10 Adc)

(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS (1)

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss E
Total Switching Loss E
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss E
Total Switching Loss E
Gate Charge

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 10 Adc)

(IEC = 10 Adc, TJ = 125°C)

(IEC = 17 Adc)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)

(T

= 25°C unless otherwise noted)

J

Characteristic

(VCE = 25 Vdc, VGE = 0 Vdc,

(VCC = 360 Vdc, IC = 20 Adc,

VGE = 15 Vdc, L = 300 mH,

Energy losses include “tail”

(VCC = 360 Vdc, IC = 20 Adc,

VGE = 15 Vdc, L = 300 mH,

Energy losses include “tail”

(VCC = 360 Vdc, IC = 20 Adc,

f = 1.0 MHz

R

= 20 Ω

= 20

R

= 20 Ω T = 125°C

= 20 Ω,

V

= 15 Vdc

= 15

=

Symbol Min Typ Max Unit

V

(BR)CES

ECS

I

CES

GES

V

CE(on)

V

GE(th)

fe

C

ies

C

oes

C

res

t

d(on)

t

r

t

d(off)

t

f

E

off
on

ts

t

d(on)

t

r

t

d(off)

t

f

E

off
on

ts

Q

T

Q

1

Q

2

V

FEC

600

—

15 — — Vdc

—
—

— — 50 µAdc

—
—
—

4.0
—

— 8.6 — Mhos

— 1605 — pF
— 146 —
— 23 —

— 29 — ns
— 60 —
— 238 —
— 140 —
— 0.8 1.15 mJ
— 0.6 —
— 1.4 —
— 28 — ns
— 62 —
— 338 —
— 220 —
— 1.3 — mJ
— 0.8 —
— 2.1 —
— 86 — nC
— 18 —
— 39 —

—
—

1.7

—

870

—
—

1.7

1.5

2.2

6.0
10

1.6

1.3

2.0

—
—

10

200

2.1
—

2.5

8.0
—

1.9
—

2.3

mV/°C

µAdc

mV/°C

Vdc

Vdc

Vdc

Vdc

2

Motorola IGBT Device Data

MGW21N60ED

(

F

,

R

,

(

F

,

R

,

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic

DIODE CHARACTERISTICS — continued

Reverse Recovery Time

(IF = 20 Adc, VR = 360 Vdc,

dIF/dt = 200 A/µs)

Reverse Recovery Stored Charge Q
Reverse Recovery Time

(IF = 20 Adc, VR = 360 Vdc,

dIF/dt = 200 A/µs, TJ = 125°C)

Reverse Recovery Stored Charge Q

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

60

TJ = 25°C

40

17.5 V

20 V

= 25°C unless otherwise noted)

J

15 V

12.5 V

60

40

Symbol Min Typ Max Unit

t

rr

t

a

t

b

RR

t

rr

t

a

t

b

RR

L

E

TJ = 125°C

— 94 —
— 32 —
— 62 —
— 0.16 — µC
— 145 —
— 50 —
— 95 —
— 0.75 — µC

— 13 —

17.5 V

20 V

15 V

ns

ns

nH

12.5 V

20

, COLLECTOR CURRENT (AMPS)I

C

I

0

60

50

40

30

20

, COLLECTOR CURRENT (AMPS)

10

C

0

VGE = 10 V

24 246

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

20

, COLLECTOR CURRENT (AMPS)

C

I

60

0

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

VGE = 10 V

Figure 1. Output Characteristics Figure 2. Output Characteristics

2.3

VCE = 100 V
5

m

s PULSE WIDTH

TJ = 125°C

25°C

7911 25 50 10075 125 150

VGE, GATE–T O–EMITTER VOLTAGE (VOLTS)

13 175

, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

CE

V

2.1

1.9

1.7

1.5

VGE = 15 V
80

m

s PULSE WIDTH

–25–50

TJ, JUNCTION TEMPERATURE (

015

IC = 20 A

15 A

10 A

°

C)

80

Figure 3. Transfer Characteristics Figure 4. Collector–T o–Emitter Saturation

V oltage versus Junction Temperature

Motorola IGBT Device Data

3

MGW21N60ED

4000

3200

TJ = 25°C
VGE = 0 V

20

16

QT

2400

1600

C, CAPACITANCE (pF)

, TOT AL ENERGY LOSSES (mJ)

TS

E

800

0

3.0

2.5

2.0

1.5

1.0

0.5

C

res

TJ = 125°C
VDD = 360 V
VGE = 15 V

C

ies

C

oes

5100

V

, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

CE

15 2520 12575

, GATE–T O–EMITTER VOLTAGE (VOLTS)

GE

V

12

8

4

0

Q2Q1

250

50

QG, TOTAL GATE CHARGE (nC)

TJ = 25°C
VCC = 300 V
IC = 20 A

Figure 5. Capacitance Variation Figure 6. Gate–T o–Emitter Voltage versus

T otal Charge

2.5

IC = 20 A

15 A

10 A

, TOT AL ENERGY LOSSES (mJ)E

TS

2.0

1.5

1.0

0.5

VCC = 360 V
VGE = 15 V
RG = 20

W

IC = 20 A

100

15 A

10 A

0

510 5030 4020

TJ = 125°C

2.0
VCC = 360 V
VGE = 15 V

1.6

RG = 20

1.2

0.8

, TOT AL ENERGY LOSSES (mJ)E

0.4

TS

0

0

RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. T otal Energy Losses versus

Gate Resistance

W

, TURN–OFF ENERGY LOSSES (mJ)

off

E

5

IC, COLLECTOR CURRENT (AMPS)

10 200

15

Figure 9. T otal Energy Losses versus

Collector Current

–25 0 25

–50

Figure 8. T otal Energy Losses versus

Junction T emperature

1.5
IC = 20 A

1.3

1.1

15 A

0.9

0.7

0.5

10 A

15 25 35

RG, GATE RESISTANCE (OHMS)

Figure 10. T urn–Off Losses versus

Gate Resistance

50 75 100 125

TJ = 125°C
VDD = 360 V
VGE = 15 V

455

4

Motorola IGBT Device Data

1.6

1.2

VCC = 360 V
VGE = 15 V
RG = 20

W

IC = 20 A

15 A

1.4

1.2

1.0

0.8

TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20

W

MGW21N60ED

0.8

0.4

, TURN–OFF ENERGY LOSSES (mJ)E

off

100

10

CURRENT (AMPS)

, INSTANTANEOUS FORWARD

F

I

0

–25 0 25

1

0.5

50 75 100 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Turn–Off Losses versus

Junction T emperature

TJ = 125°C

25°C

1.0 2.0 2.5

V

, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)

FEC

1.5

10 A

0.6

0.4

, TURN–OFF ENERGY LOSSES (mJ)E

0.2

off

0

150–50

5

IC, COLLECTOR CURRENT (AMPS)

10 200

15

Figure 12. T urn–Off Losses versus

Collector Current

100

10

TJ = 125°C

, COLLECTOR CURRENT (AMPS)

C

I

1

RGE = 20
VGE = 15 V

1

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)

W

10 100 1000

Figure 13. Forward Characteristics

versus Current

Figure 14. Reverse Biased Safe

Operating Area

Motorola IGBT Device Data

5

MGW21N60ED

P ACKAGE DIMENSIONS

–Q–

0.25 (0.010)MTB

A

K

0.25 (0.010)MYQ

M

P

U

F

D

S

–B–

123

G

–T–

E

C

4

L

R

–Y–

V

H

J

CASE 340K–01

ISSUE A

NOTES:

DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 19.7 20.3 0.776 0.799
B 15.3 15.9 0.602 0.626
C 4.7 5.3 0.185 0.209
D 1.0 1.4 0.039 0.055
E 1.27 REF 0.050 REF
F 2.0 2.4 0.079 0.094
G 5.5 BSC 0.216 BSC
H 2.2 2.6 0.087 0.102
J 0.4 0.8 0.016 0.031
K 14.2 14.8 0.559 0.583
L 5.5 NOM 0.217 NOM
P 3.7 4.3 0.146 0.169
Q 3.55 3.65 0.140 0.144
R 5.0 NOM 0.197 NOM
U 5.5 BSC 0.217 BSC
V 3.0 3.4 0.118 0.134

STYLE 4:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE /Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,

P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488

Customer Focus Center: 1–800–521–6274
Mfax: [e-mail] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

Moto rola Fax Back System – US & Canada ONL Y 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
HOME PAGE: http://motorola.com/sps/

6

– http://sps.motorola.com/mfax/

◊

Mfax is a trademark of Motorola, Inc.

Motorola IGBT Device Data

MGW21N60ED/D