Datasheet MGSF3454XT1, MGSF3454XT3 Datasheet (Motorola)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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 % #!$$%"#$

Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFET s utilize Motorola’s High

Cell Density, HDTMOS process. Low r

DS(on)

assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.

• Low r

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Miniature TSOP 6 Surface Mount Package Saves Board Space

• Visit our Web Site at http://www.mot–sps.com/ospd

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain–to–Source Voltage V

DSS

30 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

I

D

I

DM

1.75
20

A

Total Power Dissipation @ TA = 25°C P

D

950 mW

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Thermal Resistance — Junction–to–Ambient R

θJA

250 °C/W

Maximum Lead Temperature for Soldering Purposes, for 10 seconds T

L

260 °C

Device Marking = 3G

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MGSF3454XT1 7″ 8 mm embossed tape 3000
MGSF3454XT3 13″ 8 mm embossed tape 10,000

GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MGSF3454XT1/D



SEMICONDUCTOR TECHNICAL DATA

CASE 318G–02, Style 1

TSOP 6 PLASTIC



N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

r

DS(on)

= 50 mΩ (TYP)

Motorola Preferred Device



D

D

D

G

D

S

DRAIN

3
GATE

SOURCE

4

6521

 Motorola, Inc. 1997



MGSF3454XT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µA)

V

(BR)DSS

30 — —

Vdc

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)

I

DSS

—
—

—
—

1.0
25

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — ±100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

V

GS(th)

1.0 — —

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.75 A)
(VGS = 4.5 Vdc, ID = 1.5 A)

r

DS(on)

—
—

0.05

0.07

0.065

0.095

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V) C

iss

— 345 — pF

Output Capacitance (VDS = 5.0 V) C

oss

— 215 —

Transfer Capacitance (VDG = 5.0 V) C

rss

— 140 —

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 10 —

ns

Rise Time

(VDD = 10 Vdc, ID = 1.0 A,

t

r

— 15 —

Turn–Off Delay Time

(

DD

,

D

,

V

GEN

= 10 V, RL = 10 Ω)

t

d(off)

— 20 —

Fall Time t

f

— 10 —

Gate Charge Q

T

— — 15 nC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current I

S

— — 1.0 A

Pulsed Current I

SM

— — 5.0 A

Forward Voltage

(2)

V

SD

— — 1.2 V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Output Characteristics Figure 2. On–Resistance versus Drain Current

7.0 101.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

7.0

6.0

4.0

5.0

3.0

ID, DRAIN CURRENT (AMPS)

7.00

0.10

0.06

0.04

0.02

I

D

, DRAIN CURRENT (AMPS)

R

2.0

1.0

4.02.0 3.0 5.0 6.0 8.0 9.0 5.0 6.01.0 2.0 3.0 4.0

0.08

0.12

0

0

, ON–RESISTANCE ( )

DS(on)

W

VGS = 10 V

TJ = 150°C

VGS = 4.5 V

4.0 V

3.5 V

3.0 V

2.5 V

2.25 V

25°C

–55°C

MGSF3454XT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 3. On–Resistance versus Drain Current Figure 4. Capacitance

Figure 5. Gate Charge Figure 6. On–Resistance versus Junction

Temperature

Figure 7. On–Resistance versus Junction

Temperature

Figure 8. Source–Drain Diode Forward Voltage

3.0

ID, DRAIN CURRENT (AMPS)

0.16

0.12

0.14

0.10

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

0

100

10

100

QG, TOTAL GATE CHARGE (nC)

10

8.0

6.0

4.0

2.0

0

TJ, JUNCTION TEMPERATURE (

°

C)

–55

1.4

1.3

1.2

1.0

0.8

0.6
–5.0

45–55

TJ, JUNCTION TEMPERATURE (

°

C)

1.6

1.4

1.3

1.2

0.7

0.6

VSD, SOURCE–TO–DRAIN VOL TAGE (VOLTS)

0.2 0.80

10

1.0

0.1

0.01

0.001

0.5–5.0

V

0.08

0.06

1.00.5 1.5 2.0 20 244.0 8.0 12 16

1000

2.0 4.0 6.0 8.0 45 95 145

14595

1.5

0.1 0.3 0.4 0.9 1.00.6 0.7

0.04
0

C, CAPACITANCE (pF)

2.5

R , ON–RESISTANCE ( )

DS(on)

W

, GATE–T O–SOURCE VOLTAGE (VOLTS)

GS

R , ON–RESISTANCE (NORMALIZED)

DS(on)

0.7

0.9

1.1

R , ON–RESISTANCE (NORMALIZED)

DS(on)

0.8

0.9

1.0

1.1

I , SOURCE CURRENT (AMPS)

S

TJ = 150°C

VGS = 4.5 V

25°C

–55°C

VGS = 0 V

f = 1.0 MHz

TJ = 25

°

C

C

iss

C

oss

C

rss

VDS = 24 V

TJ = 25

°

C

ID = 10 A

ID = 1.5 A
VGS = 4.5 V

ID = 6.4 A
VGS = 10 V

TJ = 150°C

–55°C25°C

MGSF3454XT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 9. On–Resistance versus

Gate–to–Source Voltage

Figure 10. Threshold Voltage

Figure 11. Single Pulse Power

Figure 12. Normalized Thermal Transient Impedance, Junction–to–Ambient

10

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

0.5

0.3

0.4

0.2

TJ, JUNCTION TEMPERATURE (

°

C)

–50

0.8

0.6

1000.01

TIME (sec)

20

16

12

8.0

4.0

0

0.1

3.01.0 4.02.0 125 150–25 0 25 50

2.0

0.1 1.0 10

0

0

V

ID = 250 mA

5.0

R , ON–RESISTANCE ( )

DS(on)

W

POWER (WATTS)

7.0 8.06.0 9.0

1.2

1.0

1.4

1.8

1.6

75 100

(VOLTS)

GS(th)

NORMALIZED EFFECTIVE

TRANSIENT THERMAL IMPEDANCE

SQUARE WAVE PULSE DURATION (sec)

0.1

0.01

0.0001 0.001 0.01 0.1 1.0 10

1.0

R

θ

JA

(t) = r(t) R

θ

JA

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TA = P

(pk)

R

θ

JA

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

100 1.0 k

ID = 1.75 A

DUTY CYCLE = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

MGSF3454XT1

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

mm

inches

1.9

0.039

1.0

0.094

0.7

0.074

2.4

0.028

0.95

0.037

0.95

0.037

TSOP–6

TSOP–6 POWER DISSIP ATION

The power dissipation of the TSOP–6 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the TSOP–6 package,
PD can be calculated as follows:

PD =

T

J(max)

– T

A

R

θJA

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 500 milliwatts.

PD =

150°C – 25°C

250°C/W

= 500 milliwatts

The 250°C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 500 milliwatts. There
are other alternatives to achieving higher power dissipation
from the TSOP–6 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

MGSF3454XT1

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

P ACKAGE DIMENSIONS

CASE 318G–02

ISSUE A

TSOP 6 PLASTIC

STYLE 1:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

23

456

A

L

1

S

G

D

B

H

C

0.05 (0.002)

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 0.1142 0.12202.90 3.10
B 0.0512 0.06691.30 1.70
C 0.0354 0.04330.90 1.10
D 0.0098 0.01970.25 0.50
G 0.0335 0.04130.85 1.05
H 0.0005 0.00400.013 0.100

J 0.0040 0.01020.10 0.26
K 0.0079 0.02360.20 0.60
L 0.0493 0.06101.25 1.55
M 0 10 0 10
S 0.0985 0.11812.50 3.00

____

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

M

J

K

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

Mfax is a trademark of Motorola, Inc.

How to reach us:

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– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Ta i Po, N.T., Hong Kong. 852–26629298

INTERNET: http://www.mot.com/SPS/

This device has a class 1 ESD rating.

MGSF3454XT1/D

◊