Datasheet mgsf2n02el-d Datasheet

MGSF2N02EL

Preferred Device

Power MOSFET

2.8 Amps, 20 Volts, N−Channel SOT−23

These miniature surface mount MOSFETs low R

DS(on)

assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry.

Features

• Pb−Free Packages are Available

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• I

Specified at Elevated Temperature

DSS

Applications

• DC−DC Converters

• Power Management in Portable and Battery Powered Products, ie:

Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current

− Continuous @ T

− Single Pulse (t
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature

Range

Thermal Resistance

Junction−to−Ambient (Note 1)

Thermal Resistance

Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

1. 1” Pad, t < 10 sec.

2. Min pad, steady state.

= 25°C unless otherwise noted)

J

= 25°C

A

= 10 s)

p

DSS

I

I

DM

TJ, T

R

T

GS



20 Vdc

± 8.0 Vdc

D

D

stg

JA

L

2.8

5.0

1.25 W

− 55 to
150

100

300
260 °C

A

°C

°C/W

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2.8 A, 20 V

R

DS(on)

1

2

= 85 m (max)

N−Channel

D

G

S

3

SOT−23
CASE 318
STYLE 21

NT = Device Code
M = Date Code

PIN ASSIGNMENT

3

Drain

Gate

21

Source

MARKING
DIAGRAM

NT M

This document contains information on a new product. Specifications and information
herein are subject to change without notice.

 Semiconductor Components Industries, LLC, 2004

August, 2004 − Rev. 2

1 Publication Order Number:

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use
and best overall value.

MGSF2N02EL/D

MGSF2N02EL

)

f = 1.0 MHz)

(V

DD

16 Vdc, I

D

Adc

)

V

GS

Vdc) (Note 3)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

= 0 Vdc, ID = 10 Adc)

(V

GS

Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current

(V

= 20 Vdc, VGS = 0 Vdc)

DS

= 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

(V

DS

Gate−Source Leakage Current (VGS =  8.0 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS (Note 3)

Gate−Source Threshold Voltage

= VGS, ID = 250 Adc)

(V

DS

Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance

(V

= 4.5 Vdc, ID = 3.6 A)

GS

(V

= 2.5 Vdc, ID = 3.1 A)

GS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

(VDS = 5.0 Vdc, VGS = 0 V,

f = 1.0 MHz

Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

(VDD = 16 Vdc, ID = 2.8 Adc,

V

= 4.5 V, RG = 2.3 )

gs

2.8

,

Fall Time t
Gate Charge

(VDS = 16 Vdc, ID = 1.75 Adc,

V

= 4.0 Vdc) (Note 3

= 4.0

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Voltage

(IS = 1.0 Adc, VGS = 0 Vdc) (Note 3)

Reverse Recovery Time

(IS = 1.0 Adc, VGS = 0 Vdc,
dlS/ dt = 100 A/s) (Note 3)

Reverse Recovery Stored Charge Q

3. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperature.

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

C
C
C

t

d(on)

t

d(off)

Q
Q
Q

V

t
t
t

iss

oss

rss

t

gd

SD

rr
a
b

RR

20

−

22

−

−

−

Vdc

mV/°C

Adc

−

−

−

−

1.0
10

− − 100 nA

0.5

−

−

−2.3

1.0

−

Vdc

mV/°C

m

−

−

− 150 −

78

105

85

115

pF

− 130 −

− 45 −

− 6.0 −

r

− 95 −

ns

− 28 −

f

T

gs

− 125 −

− 3.5 −

− 0.6 −

nC

− 1.5 −

V

−

−

− 104 −

0.76

−

1.2

−
ns

− 42 −

− 62 −

− 0.20 − C

ORDERING INFORMATION

Device Package Shipping

MGSF2N02ELT1 SOT−23 3,000 Tape & Reel
MGSF2N02ELT1G SOT−23

3,000 Tape & Reel

(Pb−Free)
MGSF2N02ELT3 SOT−23 10,000 Tape & Reel
MGSF2N02ELT3G SOT−23

10,000 Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

MGSF2N02EL

8

VGS = 10 V
VGS = 7 V

6

VGS = 5 V

VGS = 2.6 V

VGS = 2.0 V

4

VGS = 3 V

2

, DRAIN CURRENT (AMPS)

D

I

0

0 0.5 1 1.5 2 2.5

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.12
TJ = 25°C

0.10

0.08

ID = 3.6 A

TJ = 25°C

VGS = 2.2 V

VGS = 1.8 V

VGS = 1.6 V

VGS = 1.2 V

5

VDS  10 V

4

3

2

TJ = 55°C

TJ = 100°C

1

, DRAIN CURRENT (AMPS)

D

I

0

0 0.5 1 1.5 2 2.5 3

V

, GATE−TO−SOURCE VOLTAGE (V)VDS, DRAIN−TO−SOURCE VOLTAGE (V)

GS

0.3
TJ = 25°C

0.2

0.06

, DRAIN−TO−SOURCE

RESISTANCE ()

DS(on)

0.04

R

0.02
02468

, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENTS (AMPS)

V

GS

0.1

, DRAIN−TO−SOURCE

RESISTANCE ()

DS(on)

R

VGS = 2.5 V

0

45678

Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Gate Voltage

1.8
ID = 3.6 A

= 4.5 V

V

GS

1.5

1.2

, DRAIN−TO−SOURCE

0.9

DS(on)

RESISTANCE (NORMALIZED)

R

0.6

−50 −25 0 25 50 75 100 125 150
T

, JUNCTION TEMPERATURE (°C)

J

10000

VGS = 0 V

TJ = 150°C

1000

, LEAKAGE (nA)

100

DSS

I

TJ = 100°C

10

4 8 12 16 20

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage

Current vs. Voltage

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3

MGSF2N02EL

350

TJ = 25°C

300

250

200

150

100

50

C, CAPACITANCE (pF)

Ciss

Coss

Crss

0

0 4 8 121620

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge

1000

VDD = 16 V

I

= 2.8 A

D

= 4.5 V

V

GS

t

t

d(off)

t

d(on)

f

t

r

100

t, TIME (ns)

10

5

QT

4

3

Q2Q1

2

1

, GATE−TO−SOURCE VOLTAGE (V)I

GS

V

0

0123

ID = 3.6 A

= 25°C

T

J

Qg, TOTAL GATE CHARGE, (nC)

1.8
VGS = 4.5 V

1.5

T

= 25°C

J

1.2

0.9

0.6

0.3

, SOURCE CURRENT (AMPS)

S

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

1

1 10 100

RG, GATE RESISTANCE ()V

Figure 9. Resistive Switching Time Variation vs.

Gate Resistance

0

0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
, SOURCE−TO−DRAIN VOLTAGE (V)

SD

Figure 10. Diode Forward Voltage vs. Current

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4

MGSF2N02EL

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AJ

A

L

3

1

2

S

B

GV

C

D

H

K

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.

DIMAMIN MAX MIN MAX

STYLE 21:

PIN 1. GATE

INCHES

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

2. SOURCE

3. DRAIN

MILLIMETERS

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

0.8

0.031

mm



SCALE 10:1

inches



*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

MGSF2N02EL

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MGSF2N02EL/D

6