Datasheet MGSF1N03LT1 Datasheet (Motorola)

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Page 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low r

DS(on)

assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in p ortable a nd battery–powered p roducts s uch a s computers, printers, PCMCIA cards, cellular and cordless telephones.

• Low r

DS(on)

Provides Higher Efficiency and Extends Battery

Life

• Miniature SOT–23 Surface Mount Package Saves Board

Space

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

30 Vdc

Gate–to–Source Voltage — Continuous V

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

750

2000

Total Power Dissipation @ TA = 25°C P

225 mW

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Thermal Resistance — Junction–to–Ambient R

θJA

625 °C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

260 °C

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MGSF1N03LT1 7″ 8mm embossed tape 3000 MGSF1N03LT3 13″ 8mm embossed tape 10,000

GreenLine is a trademark of Motorola, Inc. HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

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by MGSF1N03LT1/D

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SEMICONDUCTOR TECHNICAL DATA

CASE 318–08, Style 21

SOT–23 (TO–236AB)



N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

Motorola Preferred Device



3 DRAIN

1 GATE

2 SOURCE

 Motorola, Inc. 1996



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MGSF1N03LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µAdc)

(BR)DSS

30 — — Vdc

Zero Gate Voltage Drain Current

(VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)

DSS

— —

1.0 10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

GSS

— — ±100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

GS(th)

1.0 1.7 2.4 Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc)

DS(on)

— —

0.08

0.125

0.09

0.135

Ohms

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 Vdc) C

iss

— 100 — pF

Output Capacitance (VDS = 5.0 Vdc) C

oss

— 90 —

Transfer Capacitance (VDG = 5.0 Vdc) C

rss

— 40 —

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

d(on)

— 2.5 —

Rise Time

= 15 Vdc, ID = 1.0 Adc,

— 1.0 —

Turn–Off Delay Time

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

d(off)

— 16 —

Fall Time t

— 8.0 —

Gate Charge (See Figure 6) Q

— 6000 — pC

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current I

— — 0.6 A

Pulsed Current I

— — 0.75

Forward Voltage

(2)

— 0.8 — V

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature.

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics

1.5

0.5

1 1.5 2 2.5 3

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS = 10 V

TJ = 150°C

25°C

–55°C

3.5

2.5

0 2 4 10

1.5

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

, DRAIN CURRENT (AMPS)

0.5

2.5

3.25 V

2.75 V

VGS = 3.75 V

2.5 V

3.0 V

3.5 V

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MGSF1N03LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. On–Resistance versus Drain Current

Figure 4. On–Resistance versus Drain Current

Figure 5. On–Resistance Variation with Temperature

0.001

0.1

Figure 6. Gate Charge

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

, DIODE CURRENT (AMPS)

0 0.1 0.2 0.3 0.9

0.01

0.4

Figure 8. Capacitance

VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)

C, CAPACITANCE (pF)

0 8 16 204 12

iss

oss

rss

350

VGS = 0 V f = 1 MHz TJ = 25

0.5 0.6 0.7 0.8

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0 0.2 0.4 0.6 0.8

0.04

0.14

ID, DRAIN CURRENT (AMPS)

25°C

VGS = 4.5 V

0.09

0.1 0.3 0.5 0.7

150°C

–55°C

0.9 1

0.24

0.19

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0 0.4 0.8 1.2 1.6

0.04

0.1

0.12

ID, DRAIN CURRENT (AMPS)

VGS = 10 V

0.08

0.06

0.14

0.2 0.6 1 1.4 1.8 2

25°C

150°C

–55°C

DS(on)

, DRAIN–TO–SOURCE RESISTANCE

(NORMALIZED)

0.8

TJ, JUNCTION TEMPERATURE (

VGS = 10 V ID = 2 A

–55 0 50 100 150

0.2

0.4

0.6

1.2

1.4

1.6

VGS = 4.5 V ID = 1 A

, GATE–TO–SOURCE VOLTAGE (VOLTS)

QT, TOTAL GATE CHARGE (pC)

1000 6000

VDS = 24 V TJ = 25

2000

ID = 2.0 A

3000

50004000

TJ = 150°C

–55°C

25°C

0.16

1.8

–25 25 75 125

100

150

200

250

300

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MGSF1N03LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct s ize to i nsure proper solder connection

interface between the board and the package. With the correct pad geometry, the packages w ill self align w hen subjected to a solder reflow process.

SOT–23

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to ambient, and the o perating t emperature, TA. Using t he values provided on the data sheet for the SOT–23 package, PD can be calculated as follows:

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short t ime could result in d evice failure. Therefore, the following items should a lways be observed i n order to minimize t he thermal s tress t o which t he devices a re subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

PD =

150°C – 25°C

556°C/W

J(max)

θJA

– T

= 225 milliwatts

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MGSF1N03LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100

J 0.0034 0.0070 0.085 0.177

K 0.0180 0.0236 0.45 0.60

L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

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MGSF1N03LT1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

This device has a class 1 ESD rating.

MGSF1N03LT1/D

*MGSF1N03LT1/D*

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