Datasheet MGSF1N02LT1, MGSF1N02LT3 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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Part of the GreenLine Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low r
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage­ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.

• Low r

Life

• Miniature SOT–23 Surface Mount Package Saves Board

Space

Provides Higher Efficiency and Extends Battery

DS(on)

DS(on)

assures

N–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET



3

3 DRAIN

1

2

CASE 318–08, Style 21

SOT–23 (TO–236AB)

1
GATE

2 SOURCE

MAXIMUM RATINGS

Drain–to–Source Voltage V
Gate–to–Source Voltage — Continuous V
Drain Current — Continuous @ TA = 25°C

Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature Range TJ, T
Thermal Resistance — Junction–to–Ambient R
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

Device Marking: NZ

Device Reel Size Tape Width Quantity

MGSF1N02L T1 7″ 8mm embossed tape 3000
MGSF1N02L T3 13″ 8mm embossed tape 10,000

GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

(TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

ORDERING INFORMATION

DSS

GS

I

D

I

DM

θJA

D

– 55 to 150 °C

stg

L

20 Vdc

± 20 Vdc

750

2000

400 mW

300 °C/W
260 °C

mA

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

MGSF1N02LT1

(

DD

,

D

,

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 µAdc)

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 Vdc) C
Output Capacitance (VDS = 5.0 Vdc) C

Transfer Capacitance (VDG = 5.0 Vdc) C

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge (See Figure 6) Q

SOURCE–DRAIN DIODE CHARACTERISTICS

Continuous Current I
Pulsed Current I
Forward Voltage

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

(1)

(2)

(TA = 25°C unless otherwise noted)

(2)

(VDD = 15 Vdc, ID = 1.0 Adc,

RL = 50 Ω)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

r

DS(on)

iss

oss

rss

t

d(on)

t

r

t

d(off)

f

S

SM

V

SD

20 — — Vdc

—
—

— — ±100 nAdc

1.0 1.7 2.4 Vdc

—
—

— 125 — pF
— 120 —

— 45 —

— 2.5 —
— 1.0 —
— 16 —
— 8.0 —

T

— 6000 — pC

— — 0.6 A
— — 0.75
— 0.8 — V

—
—

0.075

0.115

1.0
10

0.090

0.130

µAdc

Ohms

ns

TYPICAL ELECTRICAL CHARACTERISTICS

2.5
VDS = 10 V

2

1.5

1

, DRAIN CURRENT (AMPS)

D

I

0.5

0

1 1.5 2 2.5 3

VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)

–55°C

TJ = 150°C

25°C

3.5

Figure 1. Transfer Characteristics

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

3

4 V

2.5

1.5

, DRAIN CURRENT (AMPS)

D

I

0.5

3.5 V

2

1

0

024 10

13 957

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

6

3.25 V

VGS = 3.0 V

2.75 V

2.5 V

2.25 V

8

Figure 2. On–Region Characteristics

MGSF1N02LT1

)

)

0.2

0.18

0.16

VGS = 4.5 V

0.14

0.12

0.1

0.08

0.06

, DRAIN–TO–SOURCE RESIST ANCE (OHMS

0.04

DS(on)

0 0.2 0.4 0.6 0.8

R

0.1 0.3 0.5
ID, DRAIN CURRENT (AMPS)

0.7

150°C

25°C

–55°C

0.9 1

Figure 3. On–Resistance versus Drain Current

0.14

0.13

0.12
VGS = 10 V

0.11

0.1

0.09

0.08

0.07

0.06

, DRAIN–TO–SOURCE RESIST ANCE (OHMS

0.05

0.04

DS(on)

0 0.4 0.8 1.2 1.6

R

0.2 0.6 1 1.4
ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

150°C

25°C

–55°C

1.8 2

1.6

1.5

1.4

1.3

1.2

1.1
1

(NORMALIZED)

0.9

, DRAIN–TO–SOURCE RESIST ANCE

0.8

0.7

DS(on)

R

0.6
–55 –5 45 95 145

TJ, JUNCTION TEMPERATURE (

VGS = 10 V
ID = 2 A

°

C)

VGS = 4.5 V
ID = 1 A

Figure 5. On–Resistance Variation with Temperature

1

0.1

0.01

, DIODE CURRENT (AMPS)

D

I

TJ = 150°C

25°C

–55°C

C, CAPACITANCE (pF)

10

, GATE–T O–SOURCE VOLTAGE (VOLTS)

GS

V

1000

100

8

6

4

2

0

0

VDS = 16 V
TJ = 25

°

C

ID = 2.0 A

1000 6000

2000

QT, TOTAL GATE CHARGE (pC)

3000

50004000

Figure 6. Gate Charge

VGS = 0 V
f = 1 MHz
TJ = 25

°

C

C

iss

C

oss

C

rss

0.001
0 0.2 0.4 0.6

VSD, DIODE FORWARD VOLTAGE (VOLTS)

0.8

1

Figure 7. Body Diode Forward Voltage

Motorola Small–Signal Transistors, FETs and Diodes Device Data

10

01520510

VDS, DRAIN–TO–SOURCE VOL TAGE (Volts)

Figure 8. Capacitance

3

MGSF1N02LT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

0.037

0.95

0.035

0.9

SOT–23 POWER DISSIP ATION

The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 416 milliwatts.

The 300°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 416 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

T

PD =

150°C – 25°C

300°C/W

J(max)

R

θJA

– T

A

= 416 milliwatts

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.037

0.95

0.079

2.0

0.031

0.8

inches

mm

SOT–23

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

P ACKAGE DIMENSIONS

MGSF1N02LT1

A

L

3

S

1

B

2

GV

C

D

H

K

J

CASE 318–08

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100

J 0.0034 0.0070 0.085 0.177

K 0.0180 0.0236 0.45 0.60

L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

MILLIMETERS

ISSUE AE

SOT–23 (TO–236AB)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

MGSF1N02LT1

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

This device has a class 1 ESD rating.

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Mfax is a trademark of Motorola, Inc.

MGSF1N02L T1/D