Datasheet MGS05N60D Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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N–Channel Enhancement–Mode Silicon Gate

This IGBT contains a built–in free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.

• Built–In Free Wheeling Diode

• Built–In Gate Protection Zener Diode

• Industry Standard Package (TO92 — 1.0 Watt)

• High Speed E

dV/dt = 1000 V/ms

• Robust High Voltage Termination

• Robust Turn–Off SOA

: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and

off

G

Order this document

by MGS05N60D/D



POWERLUX

IGBT

0.5 A @ 25°C

600 V

C

E

C

G

E

MAXIMUM RATINGS

Collector–Emitter Voltage V
Collector–Gate Voltage (RGE = 1.0 MΩ) V
Gate–Emitter Voltage — Continuous V
Collector Current — Continuous @ TC = 25°C

Total Power Dissipation @ TC = 25°C P
Operating and Storage Junction Temperature Range TJ, T

(TC = 25°C unless otherwise noted)

Parameters Symbol Value Unit

— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)

CES
CGR
GES

I

C25

I

C90

I

CM

D

stg

CASE 029–05

TO–226AE

TO92 (1.0 WATT)

600 Vdc
600 Vdc

±15 Vdc

0.5

0.3

2.0

1.0 Watt

–55 to 150 °C

Adc

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case – IGBT

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T

Single Pulse Drain–to–Source Avalanche

Energy – Starting @ TC = 25°C

Energy – Starting @ TC = 125°C

VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25

(1) Pulse width is limited by maximum junction temperature repetitive rating.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

— Junction to Ambient

≤ 150°C)

C

W

R
R

E

θJC
θJA

L

AS

25

125
260 °C

125

40

°C/W

mJ

Motorola Power Products Division Technical Data

 Motorola, Inc. 1997

1

MGS05N60D

)

f = 1.0 MHz)

)

T

C

25 C, dV/dt = 1000 V/ms)

)

T

C

125 C, dV/dt = 1000 V/ms)

ELECTRICAL CHARACTERISTICS

OFF CHARACTERISTICS

Collector–to–Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 250 µAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C)

Gate–Body Leakage Current (VGE = ±15 Vdc, VCE = 0 Vdc) I

ON CHARACTERISTICS

Collector–to–Emitter On–State Voltage

(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C)

Gate Threshold Voltage

(VCE = VGE, IC = 250 mAdc)
Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

Transfer Capacitance

DIODE CHARACTERISTICS

Diode Forward Voltage Drop

(IEC = 0.3 Adc, TC = 25°C)
(IEC = 0.3 Adc, TC = 125°C)
(IEC = 0.1 Adc, TC = 25°C)
(IEC = 0.1 Adc, TC = 125°C)

Reverse Recovery Time @ TC = 25°C

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

Reverse Recovery Stored Charge

IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms

SWITCHING CHARACTERISTICS (1)

Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge (VCC = 300 Vdc, IC = 0.3 Adc,

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(T

= 25°C unless otherwise noted)

C

Characteristic

(VCE = 20 Vdc, VGE = 0 Vdc,

(VCC = 300 Vdc, IC = 0.4 Adc,

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

T

(VCC = 300 Vdc, IC = 0.4 Adc,

VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω,

T

f = 1.0 MHz

= 25°C, dV/dt = 1000 V/ms

=

Energy losses include “tail”

= 125°C, dV/dt = 1000 V/ms

=

Energy losses include “tail”

VGE = 15 Vdc)

Symbol Min Typ Max Unit

B

VCES

I

CES

I

CES
GES

V

CE(on)

V

GE(th)

C

C

C

V

FEC

t

Q

t

d(off)

E

t

d(off)

E

Q

fe

ies
oes
res

rr

RR

t

f

off

t

f

off

T

600

—

—
—

— 10 100

—
—

3.5
—

0.3 0.42 — Mhos

— 75 100 pF
— 11 20
— 1.6 5.0

—
—
—
—

— 150 —

— 35 —

— 28 — ns
— 150 —
— 3.25 4.25
— 21 — ns
— 280 —
— 8.0 10
— 6.4 — nC

680

0.7

0.1

5.0

1.6

1.5

—

6.0

5.0

5.2

2.3

2.3

—
—

5.0
50

2.0
—

6.0
—

6.0
—

3.0
—

Vdc

V/°C

µAdc

m

Adc

Vdc

Vdc

mV/°C

Vdc

ns

m

m

m

C

J

J

2

Motorola Power Products Division Technical Data

2.5

2.0

TC = 25°C

VGE = 15 V

12.5 V

10 V

2.5

2.0

TC = 150°C

VGE = 15 V

MGS05N60D

12.5 V

10 V

, COLLECTOR–EMITTER CURRENT (A)

CE

I

, COLLECTOR–EMITTER CURRENT (A)

C

I

1.5

1.0

0.5

2.5

2.0

1.5

1.0

0.5

0

1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

2.0 3.0 1.0 2.0 3.0 4.0 5.0

Figure 1. Saturation Characteristics Figure 2. Saturation Characteristics

TC = –20°C

0

1.0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

VGE = 15 V

2.0 3.0 4.0

12.5 V

8.0 V

10 V

8.0 V

4.0

1.5

1.0

0.5

, COLLECTOR–EMITTER CURRENT (A)

C

I

0

2.0

1.9

1.8

1.7

1.6

1.5

, COLLECTOR–TO–EMITTER VOLTAGE (V)

CE

V

1.4

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

IC = 700 m

IC = 500 mA

IC = 300 mA

VG = 15 V

0–25

50 75 100 125 150

25

°

TC, CASE TEMPERATURE (

C)

8.0 V

6.00

, EMITTER–TO–COLLECTOR VOLTAGE (V)V

FEC

22

17

12

7.0

2.0

Figure 3. Saturation Characteristics Figure 4. Collector–T o–Emitter Saturation

V oltage versus Case Temperature

10

TC = 150°C

0.5 1.50
IF, COLLECTOR CURRENT (AMPS)

25°C

–20°C

2.0

, COLLECTOR–TO–EMITTER VOLTAGE (V)

FEC

V

IC = 500 m

8.0

IC = 300 mA

6.0

4.0
IC = 100 mA

2.0

0

25 75 150

50 125

TC, CASE TEMPERATURE (

1001.0

°

C)

Figure 5. Diode Forward Voltage Figure 6. Diode Forward Voltage versus Case

Temperature

Motorola Power Products Division Technical Data

3

MGS05N60D

150

TC = 25°C

15

100

50

C, CAPACITANCE (pF)

60

m

50

40

30

20

10

, TOTAL SWITCHING ENERGY LOSSES ( J)

off

E

C

0

L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
dV/dt = 1.0 kV/ms

0

, GATE–T O–EMITTER VOLTAGE (V)

GE

V

10

5.0

VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25

0

QG, TOTAL GATE CHARGE (nC)

C

ies

C

oes

res

105.0 15 7.01.0 2.0 3.0 4.0 5.0

COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

20 250

Figure 7. Capacitance Variation Figure 8. Gate–T o–Emitter Voltage versus

T otal Charge

20

m

W

125°C

25°C

, TOTAL SWITCHING ENERGY LOSSES ( J)

off

E

0.5 1.0 75 100 150

IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)

1.5

2.00

15

10

5.0

0

L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25

W

dV/dt = 1.0 kV/ms

5025

TC, CASE TEMPERATURE (

°

C)

0.7 A

125

°

C

6.00

0.3 A

Figure 9. T otal Switching Losses versus

Collector–To–Emitter Current

2.5

2.0

1.5

1.0
TC = 125°C
VGE = 15 V

0.5

RG = 25

, COLLECTOR–EMITTER CURRENT (A)I

CE

0

W

L = 3.0 mH

100 3000

VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)

200

Figure 11. Minimum Turn–Off

Safe Operating Area

Figure 10. T otal Switching Losses versus

Case T emperature

400 600500

4

Motorola Power Products Division Technical Data

1.0
D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.01

SINGLE PULSE

0.001

1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

t, TIME (ms)

Figure 12. T ypical Thermal Response

MGS05N60D

(R

(t))

q

JC

R

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

2

θ

= 25°C/W MAX

– TC = P

JC

1

R

(pk)

1.0E+02 1.0E+03

(t)

θ

JC

Motorola Power Products Division Technical Data

5

MGS05N60D

P ACKAGE DIMENSIONS

A

R

P

F

XX

G

H

B

SEATING
PLANE

L

K

D

J

V

1

23

C

N

SECTION X–X

N

CASE 029–05

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

PIN 1. GATE

2. DRAIN

3. SOURCE

MILLIMETERSINCHES

DIM MIN MAX MIN MAX

A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.022 0.46 0.56
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66

J 0.018 0.024 0.46 0.61
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.135 ––– 3.43 –––
V 0.135 ––– 3.43 –––

STYLE 31:

TO–226AE

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Motorola Power Products Division Technical Data

Mfax is a trademark of Motorola, Inc.

MGS05N60D/D