Page 1
1
Motorola IGBT Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high temperature short circuit capability and a low V
CE(on)
. It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
• Industry Standard TO–220 Package
• High Speed: E
off
= 60 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
• Low On–Voltage 2.0 V typical at 5.0 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
600 Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ) V
CGR
600 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
10
7.0
14
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
81
0.65
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
t
sc
10
m
s
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
1.5
65
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Order this document
by MGP7N60E/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
9.0 A @ 90°C
10 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
CASE 221A–09
TO–220AB
C
E
G
G
C
E
Motorola, Inc. 1997
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MGP7N60E
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Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
T emperature Coef ficient (Positive)
V
(BR)CES
600
—
—
870
—
—
Vdc
mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) V
(BR)ECS
15 — — Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
I
CES
—
—
—
—
10
200
µAdc
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) I
GES
— — 50
m
Adc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 2.5 Adc)
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
V
CE(on)
—
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc) g
fe
— 2.5 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ies
— 610 —
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz
)
C
oes
— 60 —
Transfer Capacitance
f = 1.0 MHz)
C
res
— 10 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
t
d(on)
— 22 —
ns
Rise Time
(VCC = 360 Vdc, IC = 5.0 Adc,
t
r
— 24 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
R
= 20 Ω, T
= 25°C
)
t
d(off)
— 64 —
Fall Time
R
G
= 20 Ω,
T
J
=
25 C)
Energy losses include “tail”
t
f
— 196 —
Turn–Off Switching Loss E
off
— 0.20 0.34 mJ
Turn–On Delay Time
t
d(on)
— 31 —
ns
Rise Time
(VCC = 360 Vdc, IC = 5.0 Adc,
t
r
— 24 —
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 mH,
R
= 20 Ω, T
= 125°C
)
t
d(off)
— 195 —
Fall Time
R
G
= 20 Ω,
T
J
=
125 C)
Energy losses include “tail”
t
f
— 220 —
Turn–Off Switching Loss E
off
— 0.38 — mJ
Gate Charge
Q
T
— 27.2 —
nC
(VCC = 360 Vdc, IC = 5.0 Adc,
V
= 15 Vdc
)
Q
1
— 7.0 —
V
GE
= 15
Vdc)
Q
2
— 13.7 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 7.5 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
Page 3
MGP7N60E
3
Motorola IGBT Device Data
Figure 1. Output Characteristics Figure 2. Output Characteristics
Figure 3. Transfer Characteristics Figure 4. VCE versus Junction Temperature
Figure 5. Capacitance Variation Figure 6. VGE versus Total Charge
80
V
CE(on)
, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)
15
20
10
10 125
VGE, GATE–T O–EMITTER VOLTAGE (VOLTS)
12
8
6
4
2
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25–50
2.2
1.8
1.6
1.4
1.2
1.0
011
100
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)
1200
800
600
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5300
20
16
12
4
0
5
I
C
, COLLECTOR CURRENT (AMPS)
V
CE(on)
, COLLECTOR–TO–EMITTER ON–STATE
5
0
312 4567
6789 25 50 75 100 125 150
C, CAPACITANCE (pF)
15 2520
1000
10 15 3520 25
8
V
80
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)
15
20
10
I
C
, COLLECTOR CURRENT (AMPS)
5
0
312 4567
I
C
, COLLECTOR CURRENT (AMPS)
13
10 2.0
, GATE–T O–EMITTER VOLTAGE (VOLTS)
GE
TJ = 25°C
IC = 5.0 A
Q1 Q2
QT
VGE = 0 V
TJ = 25
°
C
C
ies
C
oes
C
res
TJ = 25°C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
TJ = 125°C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
IC = 5.0 A
3.75 A
2.5 A
TJ = 125°C
25°C
VOLTAGE (VOLTS)
VCE = 100 V
5
m
S PULSE WIDTH
VGE = 15 V
80
m
S PULSE WIDTH
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MGP7N60E
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Motorola IGBT Device Data
Figure 7. Turn–Off Losses versus Gate
Resistance
Figure 8. Turn–Off Losses versus Junction
Temperature
Figure 9. Turn–Off Energy Losses versus
Collector Current
Figure 10. Reverse Biased Safe Operating
Area
5010
GATE RESISTANCE (
W
)
0.4
0.5
0.3
570
I
C
, COLLECTOR CURRENT (AMPS)
0.6
0.4
0.3
0.2
0.1
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOL TS)
1
100
10
1
6
I
C
, COLLECTOR CURRENT (AMPS)
0.1
0
2515 20 30 35 40 45
1234 10 100 1000
1500
TJ, JUNCTION TEMPERATURE (
°
C)
0.3
0.5
0.2
0.1
0
5025 75 100 125
, TURN–OFF ENERGY LOSSES (mJ)
8
0.5
0.2
0.4
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
IC = 5.0 A
3.75 A
2.5 A
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 5.0 A
3.75 A
2.5 A
VGE = 15 V
RGE = 20
W
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20
W
TJ = 125°C
E
off
, TURN–OFF ENERGY LOSSES (mJ)E
off
, TURN–OFF ENERGY LOSSES (mJ)E
off
Page 5
MGP7N60E
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Motorola IGBT Device Data
P ACKAGE DIMENSIONS
CASE 221A–09
TO–220AB
ISSUE Z
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
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Motorola IGBT Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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