Datasheet mgp15n35cl-d Datasheet

MGP15N35CL, MGB15N35CL

Preferred Device

Ignition IGBT 15 Amps, 350 Volts

N−Channel TO−220 and D2PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

• Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition

System Applications

• High Pulsed Current Capability up to 50 A

• Gate−Emitter ESD Protection

• Temperature Compensated Gate−Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage to Interface Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• Optional Gate Resistor (R

MAXIMUM RATINGS (−55°C ≤ T

Rating

Collector−Emitter Voltage V

Collector−Gate Voltage V

Gate−Emitter Voltage V

Collector Current−Continuous

@ T

= 25°C − Pulsed

C

ESD (Human Body Model)

R = 1500 Ω, C = 100 pF

ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Temperature Range TJ, T

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS

Single Pulse Collector−to−Emitter Avalanche

Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L = 2.0 mH, Starting T V

= 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L

CC

= 2.0 mH, Starting T

Reverse Avalanche Energy

V

= 100 V, VGE = 20 V, L = 3.0 mH,

CC

= 25.8 A, Starting TJ = 25°C

Pk I

L

(−55°C ≤ TJ ≤ 175°C)

Characteristic

J

= 25°C

= 150°C

)

G

≤ 175°C unless otherwise noted)

J

Symbol Value Unit

CES

CER

GE

I

C

ESD

P

D

stg

Symbol Value Unit

E

AS

E

AS(R)

380 V

22 V

1550A

8.0

150

1.0

−55 to 175

300

200

1000

DC

A

AC

kV

Watts

W/°C

°C

mJ

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15 AMPERES

350 VOLTS (Clamped)

V

CE(on)

R

1

2

3

Collector

G15N35CL YWW

1

Gate

Collector

Device Package Shipping

MGP15N35CL TO−220 50 Units/Rail

MGB15N35CLT4 D2PAK 800 Tape & Reel

Preferred devices are recommended choices for future use and best overall value.

@ 10 A = 1.8 V Max

N−Channel

G

GE

4

TO−220AB

CASE 221A

STYLE 9

MARKING DIAGRAMS & PIN ASSIGNMENTS

4

3 Emitter

2

ORDERING INFORMATION

C

R

G

E

1

Collector

G15N35CL YWW

1

Gate

Collector

G15N35CL = Device Code Y = Year WW = Work Week

2

3

D2PAK

CASE 418B

STYLE 4

4

2

4

3 Emitter

July, 2006 − Rev. 5

1 Publication Order Number:

MGP15N35CL/D

MGP15N35CL, MGB15N35CL

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Ambient TO−220 R

D2PAK (Note 1) R

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Test Conditions Temperature Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Clamp Voltage BV

Zero Gate Voltage Collector Current I

Reverse Collector−Emitter Leakage Current I

Reverse Collector−Emitter Clamp Voltage B

Gate−Emitter Clamp Voltage BV

Gate−Emitter Leakage Current I

Gate Resistor (Optional) R

Gate Emitter Resistor R

CES

ECS

VCES(R)

GES

G

GE

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Threshold Temperature Coefficient

(Negative)

1. When surface mounted to an FR4 board using the minimum recommended pad size.

2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.

V

GE(th)

− − − − 4.4 − mV/°C

IC = 2.0 mA TJ = −40°C to

IC = 10 mA TJ = −40°C to

VCE = 300 V,

= 0 V

V

GE

VCE = −24 V

IC = −75 mA

IG = 5.0 mA TJ = −40°C to

VGE = 10 V TJ = −40°C to

− TJ = −40°C to

IC = 1.0 mA,

= V

V

GE

CE

θ

JC

θ

JA

θ

JA

L

1.0 °C/W

62.5

50

275 °C

320 350 380 V

150°C

330 360 380

150°C

TJ = 25°C − 1.5 20

TJ = 150°C − 10 40*

TJ = −40°C − 0.7 1.5

TJ = 25°C − 0.35 1.0

TJ = 150°C − 8.0 15*

TJ = −40°C − 0.05 0.5

TJ = 25°C 25 33 50

TJ = 150°C 25 36 50

TJ = −40°C 25 30 50

17 20 22 V

150°C

384 600 1000 μA

150°C

− 70 −

150°C

10 16 26

150°C

TJ = 25°C 1.4 1.7 2.0

TJ = 150°C 0.75 1.1 1.4

TJ = −40°C 1.6 1.9 2.1*

μA

mA

V

DC

Ω

k

DC

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2

MGP15N35CL, MGB15N35CL

ELECTRICAL CHARACTERISTICS (continued)

Characteristic

ON CHARACTERISTICS (continued) (Note 3)

Collector−to−Emitter On−Voltage

Collector−to−Emitter On−Voltage V

Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to

DYNAMIC CHARACTERISTICS

Input Capacitance C

Output Capacitance C

Transfer Capacitance C

SWITCHING CHARACTERISTICS (Note 3)

Turn−Off Delay Time (Inductive)

Fall Time (Inductive) t

Turn−Off Delay Time (Resistive) t

Fall Time (Resistive) t

Turn−On Delay Time t

Rise Time t

3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%. *Maximum Value of Characteristic across Temperature Range.

Symbol Test Conditions Temperature Min Typ Max Unit

V

CE(on)

IC = 6.0 A,

= 4.0 V

V

GE

TJ = 25°C 1.0 1.3 1.6

TJ = 150°C 0.9 1.2 1.5

TJ = −40°C 1.1 1.4 1.7*

TJ = 25°C 1.3 1.6 1.9

IC = 10 A,

= 4.0 V

V

GE

TJ = 150°C 1.2 1.5 1.8

TJ = −40°C 1.3 1.6 1.9*

TJ = 25°C 1.6 1.95 2.25

IC = 15 A,

= 4.0 V

V

GE

TJ = 150°C 1.7 2.0 2.3*

TJ = −40°C 1.6 1.9 2.2

TJ = 25°C 1.9 2.2 2.5

IC = 20 A,

= 4.0 V

V

GE

TJ = 150°C 2.1 2.4 2.7*

TJ = −40°C 1.85 2.15 2.45

TJ = 25°C 2.1 2.5 2.9

IC = 25 A,

= 4.0 V

V

GE

TJ = 150°C 2.5 2.9 3.3*

TJ = −40°C 2.0 2.4 2.8

CE(on)

IC = 10 A, VGE = 4.5 V TJ = 150°C − 1.5 1.8 V

150°C

OSS

RSS

t

d(off)

d(on)

ISS

f

r

VCC = 25 V, VGE = 0 V

f = 1.0 MHz

VCC = 300 V, IC = 6.5 A

R

= 1.0 kΩ, L = 300 μH

G

VCC = 300 V, IC = 6.5 A

R

= 1.0 kΩ, L = 300 μH

G

VCC = 300 V, IC = 6.5 A R

= 1.0 kΩ, RL = 46 Ω,

G

VCC = 300 V, IC = 6.5 A R

= 1.0 kΩ, RL = 46 Ω,

G

VCC = 10 V, IC = 6.5 A

R

= 1.0 kΩ, RL = 1.5 Ω

G

VCC = 10 V, IC = 6.5 A

R

= 1.0 kΩ, RL = 1.5 Ω

G

TJ = −40°C to

150°C

TJ = 25°C − 4.0 10

TJ = 150°C − 4.5 10

TJ = 25°C − 7.0 10

TJ = 150°C − 10 15*

TJ = 25°C − 4.0 10

TJ = 150°C − 4.5 10

TJ = 25°C − 13 20

TJ = 150°C − 16 20

TJ = 25°C − 1.0 1.5

TJ = 150°C − 1.0 1.5

TJ = 25°C − 4.5 6.0

TJ = 150°C − 5.0 6.0

V

DC

8.0 15 25 Mhos

− 1000 1300

pF

− 100 130

− 5.0 8.0

μSec

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3

MGP15N35CL, MGB15N35CL

TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)

60

VGE = 10.0 V

50

40

30

20

10

COLLECTOR CURRENT (AMPS)

C,

I

VGE = 5.0 V

TJ = 25°C TJ = 150°C

0

V

, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

CE

42

VGE = 4.5 V

VGE = 4.0 V

VGE = 3.5 V

VGE = 3.0 V

VGE = 2.5 V

6

COLLECTOR CURRENT (AMPS)

C,

I

81357

Figure 1. Output Characteristics Figure 2. Output Characteristics

30

25

VCE = 10 V

20

60

VGE = 10.0 V

50

40

30

20

10

4.0

3.5

3.0

2.5

VGE = 5.0 V

0

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

VGE = 5.0 V

IC = 20 A

42

IC = 25 A

VGE = 4.5 V

VGE = 4.0 V

VGE = 3.5 V

VGE = 3.0 V

VGE = 2.5 V

6

81357

15

TJ = 150°C

10

TJ = 25°C

5

COLLECTOR CURRENT (AMPS)

C,

I

0

0.5 2.5 3 3.5

0

VGE, GATE TO EMITTER VOLTAGE (VOLTS)

21.51

TJ = −40°C

Figure 3. Transfer Characteristics

10000

C

1000

100

10

C, CAPACITANCE (pF)

iss

C

oss

C

rss

1

0 120604020 140 180

VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

4 4.5 5

20080 100 160 −50 50 75250 100−25 125 150

2.0

1.5

1.0

0.5

0.0

, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

−50 50 75250 100−25 125

CE

V

IC = 15 A

IC = 10 A

TJ, JUNCTION TEMPERATURE (°C)

IC = 5 A

Figure 4. Collector−to−Emitter Saturation

Voltage vs. Junction Temperature

2.5

THRESHOLD VOLTAGE (VOLTS)

2.0

1.5

1.0

0.5

0.0

Mean + 4 σ

Mean − 4 σ

Mean

TEMPERATURE (°C)

IC = 1 mA

150

Figure 5. Capacitance Variation

Figure 6. Threshold Voltage vs. Temperature

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4

MGP15N35CL, MGB15N35CL

30

25

20

15

10

T = 150°C

, LATCH CURRENT (AMPS)

5

L

I

0

Figure 7. Minimum Open Secondary Latch

30

25

20

15

10

T = 150°C

T = 25°C

642

INDUCTOR (mH)

Current vs. Inductor

V

= 50 V

CC

V

= 5.0 V

GE

= 1000 Ω

R

G

810

V

= 50 V

CC

V

= 5.0 V

GE

= 1000 Ω

R

G

30

V

= 50 V

CC

V

25

20

L = 2.0 mH

= 5.0 V

GE

= 1000 Ω

R

G

15

L = 3.0 mH

10

L = 6.0 mH

, LATCH CURRENT (AMPS)

5

L

I

0

−50 50 75250 100−25 125 150 175

TEMPERATURE (°C)

Figure 8. Minimum Open Secondary Latch

Current vs. Temperature

30

25

20

15

10

L = 2.0 mH

L = 3.0 mH

L = 6.0 mH

V

= 50 V

CC

V

= 5.0 V

GE

= 1000 Ω

R

G

, LATCH CURRENT (AMPS)

5

L

I

0

642

810

INDUCTOR (mH)

Figure 9. Typical Open Secondary Latch

Current vs. Inductor

12

V

= 300 V

CC

V

= 5.0 V

GE

10

SWITCHING TIME (μS)

= 1000 Ω

R

8

6

G

I

= 10 A

C

L = 300 μH

t

d(off)

t

f

4

2

0

−50 50 75250 100−25 125 150

TC, CASE TEMPERATURE (°C)

, LATCH CURRENT (AMPS)

5

L

I

0

−50 50 75250 100−25 125 150 175

TEMPERATURE (°C)

Figure 10. Typical Open Secondary Latch

Current vs. Temperature

14

t

d(off)

f

14

12

10

V V

8

R T

6

L = 300 μH

= 300 V

CC

= 5.0 V

GE

= 1000 Ω

G

= 150°C

J

4

SWITCHING TIME (μS)

2

0

08106412216

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Switching Speed vs. Case

Temperature

Figure 12. Switching Speed vs. Collector

Current

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5

MGP15N35CL, MGB15N35CL

14

12

10

8

t

f

6

t

4

d(off)

SWITCHING TIME (μS)

2

0

250 500

750 1000

RG, EXTERNAL GATE RESISTANCE (Ω)

Figure 13. Switching Speed vs. External Gate

Resistance

10

Duty Cycle = 0.5

V

= 300 V

CC

V

= 5.0 V

GE

= 25°C

T

J

I

= 10 A

C

L = 300 μH

14

12

t

f

10

V

= 300 V

CC

= 5.0 V

V

8

GE

= 150°C

T

J

I

= 10 A

6

C

L = 300 μH

4

t

d(off)

SWITCHING TIME (μS)

2

0

250 500

, EXTERNAL GATE RESISTANCE (Ω)

R

G

750 1000

Figure 14. Switching Speed vs. External Gate

Resistance

1

0.2

0.1

0.05

0.02

0.1

0.01

Single Pulse

R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)

0.01

0.00001 0.0010.0001 0.1

0.01

Figure 15. Transient Thermal Resistance

(Non−normalized Junction−to−Ambient mounted on

fixture in Figure 16)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

t,TIME (S)

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT T

T

J(pk)

≅ R(t) for t ≤ 0.2 s

R

θ

JC

2

− TA = P

(pk)

1

R

θ

JA

110

(t)

100 1000

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6

MGP15N35CL, MGB15N35CL

1.5″

4″

0.125″

4″

Figure 16. Test Fixture for Transient Thermal Curve

(48 square inches of 1/8, thick aluminum)

100

DC

10

1

100 ms

0.1

COLLECTOR CURRENT (AMPS)

0.01 1 10010 1000

COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 17. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at T

C

100 μs

1 ms

10 ms

= 255C)

100

DC

10

1

0.1

COLLECTOR CURRENT (AMPS)

0.01 1 10010 1000

COLLECTOR−EMITTER VOLTAGE (VOLTS)

100 ms

Figure 18. Single Pulse Safe Operating Area

(Mounted on an Infinite Heatsink at T

= 1255C)

C

100 μs

1 ms

10 ms

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7

MGP15N35CL, MGB15N35CL

100

DC

10

t1 = 1 ms, D = 0.05

t1 = 2 ms, D = 0.10

t1 = 3 ms, D = 0.30

1

P

(pk)

t

0.1

COLLECTOR CURRENT (AMPS)

DUTY CYCLE, D = t1/t

0.01 1 10010 1000

1

t

2

COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 19. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at T

C

= 255C)

100

DC

10

t1 = 1 ms, D = 0.05

t1 = 2 ms, D = 0.10

t1 = 3 ms, D = 0.30

1

P

(pk)

t

0.1

COLLECTOR CURRENT (AMPS)

DUTY CYCLE, D = t1/t

0.01 1 10010 1000

1

t

2

Figure 20. Pulse Train Safe Operating Area

(Mounted on an Infinite Heatsink at TC = 1255C)

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MGP15N35CL, MGB15N35CL

PACKAGE DIMENSIONS

TO−220 THREE−LEAD

TO−220AB

CASE 221A−09

ISSUE AA

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04

STYLE 9:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

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9

−T−

SEATING PLANE

−B−

G

MGP15N35CL, MGB15N35CL

PACKAGE DIMENSIONS

D2PAK

CASE 418B−03

ISSUE D

C

E

V

4

A

231

S

K

J

D

3 PL

0.13 (0.005) T

M

B

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

STYLE 4:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MGP15N35CL/D

10