Datasheet MGF7169C Datasheet (Mitsubishi)

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGF7169C

Technical Note

Specifications are subject to change without notice.

DESCRIPTION
The MGF7169C is a monolithic microwave integrated

circuit for use in CDMA base handheld phone.

FEATURES
Low voltage operation :

Vd=3.0V
High output power :
Po=28dBm typ. @f=1.85~1.91GHz
Low distortion :
ACP=-46dBc max. @Po=28dBm
High efficiency :
Id=520mA typ. @Po=28dBm
Small size :

7.0 x 6.1 x 1.1 mm
Surface mount package
2 Stage Amplifier
External matching circuit is required

APPLICATION

1.9GHz band handheld phone

UHF BAND GaAs POWER AMPLIFIER

PIN CONFIGURATION
(TOP VIEW)

Pi

Vg1

Vd1

MC

Vg2

: RF input

Pi

: RF output

Po

: Drain bias 1

Vd1

: Drain bias 2

Vd2

: Gate bias

Vg

: Note1

MC

: Connect to GND

GND

: Connect to GND

CASE

GND

GND

Vd2 / Po

QUALITY GRADE

Note1:Connect to matching circuit

GG

Block Diagram of this IC and Application Circuit Example.

VDD

Regulator

Battery

VD1

VD2

Pout

*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Matching
circuit

MGF7169C

HPA

VG1 VG2
Negative voltage

generator

Matching
circuit

Pin

MITSUBISHI ELECTRIC

(1/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol Parameter Ratings Unit
Vd1,Vd2
Vg
Pi
Tc(op)
Tstg

*1.Each maximum rating is guaranteed independently.

Drain supply voltage
Gate supply voltage
Input power dBm15
Operating case temperature
Storage temperature

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Symbol

Parameter

6 V

-4 V

-30 ~ +85

-30 ~ +100

Test conditions

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

˚C
˚C

Limits

MIN TYP MAX

Unit

f

Idt

Idle_Id Idle current

Pout

Ig Gate current

rin input VSWR

—

—

frequency

Total drain current

Output power

Damage
with-standing

Stability

Note

Note

ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V

Vg1=Vg2=-2.0V, Po=28dBm
Vg1=Vg2=-2.5V, Po=12dBm

Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)

Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec

Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase

1850 1910 MHz

— —
— —
—
— —

—
— —
— —
— —

No oscillation
Spurious level≤-60dBc

—

450

480

520

450

150

50
28

No damage

—

——
——
—

3

mA

mA

dBm

mA-3

dBc-302sp 2nd harmonics

—

*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.

Note : Sampling inspection

MITSUBISHI ELECTRIC

(2/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Pin vs. Pout,Id for CDMA

35

30

25

Pout

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

1400

1200

1000

Idt

800

Id2

Id1

600

400

200

0

Id (mA)

Fin=1880MHz

Vd1=Vd2=3.0V

Vg1=Vg2=-2.0V
CDMA evaluation

Pin (dBm)

Pin vs. Pout,Efficiency for CDMA

35

30

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

Pout

Efficiency

Pin (dBm)

70

60

50

40

30

Efficiency (%)

20

10

0

Fin=1880MHz

Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation

MITSUBISHI ELECTRIC

(3/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Pin vs.Pout,Gain for CDMA

35

30

Pout

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

35

30

25

Gain

20

15

GAIN (dB)

10

Fin=1880MHz

5

0

Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation

Pin (dBm)

Pin vs. Pout,ACPR for CDMA

35

30

Pout

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16
Pin (dBm)

ACPR

15

5

-5

-15

-25

-35

-45

-55

ACPR (dBc)

Fin=1880MHz

Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation

MITSUBISHI ELECTRIC

(4/20)

Aug '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Spectral Plot of CDMA

ACPR=-32.31dBc

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

Harmonics

2SP=-53.3dBc
3SP=-31.3dBc

Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm
CDMA evaluation

MITSUBISHI ELECTRIC

(5/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Vd dependence of Pin vs.Pout,Idt

35

30

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

Pout

Idt

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

1400

1200

1000

800

600

400

200

0

Id (mA)

Fin=1880MHz
Vg1=Vg2=-2.0V

CDMA evaluation

Vd=2.6V
Vd=3.0V
Vd=3.4V

Pin (dBm)

Vd dependence of Pin vs.Pout,Efficiency

35

30

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

Pout

Efficiency

70

60

50

40

30

Efficiency (%)

20

10

0

Vd=2.6V
Vd=3.0V
Vd=3.4V

Fin=1880MHz
Vg1=Vg2=-2.0V

CDMA evaluation

Pin (dBm)

MITSUBISHI ELECTRIC

(6/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Vd dependence of Pin vs.Pout,Gain

35

30

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

Pout

Gain

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

35

30

25

20

15

10

5

0

GAIN (dB)

Fin=1880MHz
Vg1=Vg2=-2.0V

CDMA evaluation

Vd=2.6V
Vd=3.0V
Vd=3.4V

Pin (dBm)

Vd dependence of Pin vs.Pout,ACPR

35

30

Pout

25

20

15

Pout (dBm)

10

5

0

-12 -8 -4 0 4 8 12 16

ACPR

15

5

-5

-15

-25

-35

-45

-55

ACPR (dBc)

Fin=1880MHz
Vg1=Vg2=-2.0V
CDMA evaluation

Vd=2.6V
Vd=3.0V
Vd=3.4V

Pin (dBm)

MITSUBISHI ELECTRIC

Aug. '97

(7/20)

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Vd dependence of Fin vs. Gain,Idt

30

Idt

25

Gain (dB)

20

15

1.84 1.86 1.88 1.90 1.92

Gain

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

600

400

Vd=2.6V
Vd=3.0V
Vd=3.4V

200

0

Idt (mA)

Fin=1880MHz
Vg1=Vg2=-2.0V

CDMA evaluation

Frequency (GHz)

Vd dependence of Fin vs. Id1,Id2

150

Id2

100

Id1 (mA)

50

0

1.84 1.86 1.88 1.90 1.92

Id1

Frequency (GHz)

600

400

200

0

Id2 (mA)

Vd=2.6V
Vd=3.0V
Vd=3.4V

Fin=1880MHz
Vg1=Vg2=-2.0V

CDMA evaluation

MITSUBISHI ELECTRIC

(8/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

Vd dependence of Fin vs. Gain,Efficiency

35

Efficiency

30

Gain (dB)

25

20

1.84 1.86 1.88 1.90 1.92

Gain

50

40

30

Efficiency (%)

20

MGF7169C

Vd=2.6V
Vd=3.0V
Vd=3.4V

Fin=1880MHz
Vg1=Vg2=-2.0V
CDMA evaluation

Frequency (GHz)

Vd dependence of Fin vs. Gain,ACPR

25

20

Gain (dB)

15

10

1.84 1.86 1.88 1.90 1.92

Gain

ACPR

Frequency (GHz)

-10

-20

-30

-40

ACPR (dBc)

Fin=1880MHz
Vg1=Vg2=-2.0V
CDMA evaluation

Vd=2.6V
Vd=3.0V
Vd=3.4V

MITSUBISHI ELECTRIC

(9/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

Temp. dependence of Fin vs. Gain,ACPR

25

Gain

20

Gain (dB)

15

ACPR

10

-10

-20

-30

-40

MGF7169C

f=1.85GHz
f=1.88GHz
f=1.91GHz

ACPR+1.25MHz (dBc)

Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm

-30 -10 10 30 50 70 90
Temperature (Åé)

Temp. dependence of Fin vs. Id1,Id2

150

Id2

100

Id1 (mA)

50

0

-30 -10 10 30 50 70 90

Id1

600

500

400

300

200

100

0

Id2 (mA)

Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm

f=1.85GHz
f=1.88GHz
f=1.91GHz

Temperature (Åé)

MITSUBISHI ELECTRIC

Aug. '97

(10/20)

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

MGF7169C

Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz)

l=2.0
w=1.0

MGF

7169C

Vd2

1000pF

Pin

l=8.0
w=1.0

l=8.5
w=1.0

2.5pF

1.5pF

l=23.5
w=0.5

l=2.0
w=2.2

4.0pF

4.5pF
Pout

l=11.0
w=1.0

Unit:mm
SUB. data

Er=4.8
H=600 mm
Metal T=43 mm

MITSUBISHI ELECTRIC

(11/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

Test Circuit Board for CDMA(1.85-1.91GHz)

2.5pF

1.5pF

Pin

MGF7169C

Vg1

1000pF

10Ohm

1000pF

Vd1

1000pF

Vg2

4.0pF

Pout

4.5pF

3K Ohm (This will be included in PKG for Mass Production)

1000pF

1000pF

Vd2

40 x 60 mm

MITSUBISHI ELECTRIC

(12/20)

SUB. data
ER=4.8

H=600µm
Metal T=43µm

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

VG1 VG2

Pin Pout

FET1

Matching
circuits

UHF BAND GaAs POWER AMPLIFIER

FET2

MGF7169C

VD1 VD2

ZI(ES)

ZL(ES)

Equivalent circuit of MGF7169C with our test board

: MGF7169C(Ceramic package)
: our test board(Er=4.8, t=0.6mm)

MITSUBISHI ELECTRIC

(13/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

Input/Output Impedance (@1.85-1.91GHz)

ZI(ES) = 6.8 - j22.7 (Ω) f=1.85GHz

6.7 - j21.3 (Ω) f=1.88GHz

6.6 - j19.8 (Ω) f=1.91GHz
ZL(ES) = 4.3 - j3.2 (Ω) f=1.85GHz

4.2 - j2.7 (Ω) f=1.88GHz

4.0 - j2.3 (Ω) f=1.91GHz

ZL(ES) on SMITH CHART

MGF7169C

1.91GHz

X

X

X

1.88GHz

1.85GHz

Conditions;
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm

MITSUBISHI ELECTRIC

(14/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

OUTLINE DRAWING

6.1+/-0.2

Note1

1

2
3

7.0+/-0.2
4

5

5.2

Unit : mm

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

0.3

8

7

6

6.2

1.1+/-0.2

8 - (0.5)

P1.27 x 4 = 5.08+/-0.1

2 - (2.4)

8 - (0.4)

4 - R0.2

(1.2)2 - (0.1)

4.28

2 - 2.06

0.3

Terminal Connection

RF IN (Pi)

1

Vg1

2
3

Vd1

4

MC

5

Vg2

6

RF OUT (Po) & Vd2

7

GND

8

GND

6 - 0.8+/-0.1

2 - (0.1)

4.1

8 - (4.9)

Note1 : 1 pin mark
Note2 : The values without tolerance are typical.

MITSUBISHI ELECTRIC

(15/20)

Case:GND

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Recommended Mount Pad

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

2.50

1.0

0.45

7.40

1.2

1.27 x 4=5.08

0.9

0.8

4.10

4.90

2.14

1.4

2.16

0.8

Unit:mm

MITSUBISHI ELECTRIC

(16/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Recommended Temperature Profile

1) Infrared Reflow and Air Reflow Temperature Profile

max. 10sec

1~4 deg.C/sec

Temperature

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

max. 240 deg.C

1~4 deg.C/sec

150 deg.C

Approx. 60sec

Time

Notes 1) Temperature profile on package surface

2) Reflow process : Up to three times

MITSUBISHI ELECTRIC

(17/20)

Aug. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

MGF7169C

Lumped Elements
Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz)

Vd2

Chip Inductor
10nH

1000pF

Pin

A

1.5pF

l=2.0
w=1.0

1.0pF

l=2.0
w=2.2

MGF

7169C

B

F

D

Pout

15pF

4.0pF
C

Unit:mm
SUB. data

Er=4.8
H=600 um
Metal T=43 um

MITSUBISHI ELECTRIC

(18/20)

Oct. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

UHF BAND GaAs POWER AMPLIFIER

Lumped Elements
Test Circuit Board for CDMA(1.85-1.91GHz)

A

1.0pF

B

Pin

1.5pF

MGF7169C

5mm

1000pF

1000pF

10Ohm

1000pF

1000pF

Vg1

Line
Chip Capacitor
Chip Inductor

This device needs 4 chip capacitors,1 chip inductor
and 2 transmission lines to make input and output
matching circuit.

Vd1

3K Ohm (This will be included in PKG for Mass Production)

Vg2

C

4.0pF

10nH

F

15pF

1000pF

40 x 60 mm

D

Pout

Vd2

SUB. data
ER=4.8
H=600um
Metal T=43um

MITSUBISHI ELECTRIC

(19/20)

Oct. '97

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

Preliminary
information

Pin

VG1 VG2

FET1

Matching
circuits

MGF7169C

UHF BAND GaAs POWER AMPLIFIER

Pout

FET2

VD1 VD2

ZI(ES)

ZL(ES)

Lumped Elements
Equivalent circuit of MGF7169C with our test board

: MGF7169C(Ceramic package)
: our test board(Er=4.8, t=0.6mm)

MITSUBISHI ELECTRIC

(20/20)

Oct. '97