Datasheet MGF0910A Datasheet (Mitsubishi)

MITSUBISHI SEMICONDUCTOR GaAs FET

Test conditions

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

ηadd

MGF0910A

L, S BAND POWER GaAs FET

DESCRIPTION

The MGF0910A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.

FEATURES

• Class A operation

• High output power
P1dB=38dBm(TYP) @2.3GHz

• High power gain
GLP=11dB(TYP) @2.3GHz

• High power added efficiency

ηadd=45%(TYP) @2.3GHz,P1dB

• Hermetically sealed metal-ceramic package with ceramic lid

APPLICATION

UHF band power amplifiers

QUALITY GRADE

• IG

RECOMMENDED BIAS CONDITIONS

• VDS=10V

• ID=1.3A

• Rg=100Ω

• Refer to Bias Procedure

OUTLINE DRAWING

GF-21

17.5

14.3

9.4

10.0

Unit:millimeters

1

1.0

2-R1.25

22

3

1

GATE

2

SOURCE(FLANGE)

3

DRAIN

Symbol Parameter Ratings

VGDO
VGSO
ID
IGR
IGF

PT
Tch
Tstg

*1:TC=25˚C

Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature

-65 to +175

-15

-15
5 A

15

31.5

27.3
175

Unit

V
V

mA
mA

W
˚C
˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

37
10

Limits

Typ MaxMin

–

–

1.5

–

-2

–
–

38
11

45

5.0
–

-5

–

–
–

–

5.5

–

Symbol Unit

IDSS
gm

VGS(off)
P1dB
GLP

Rth(ch-c)

*1:Channel to case *2:Pin=22dBm

Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain

compression
Linear power gain *2

Power added efficiency at P1dB
Thermal resistance *1

Parameter

VDS=3V,VGS=0V
VDS=3V,ID=1.3A
VDS=3V,ID=10mA

VDS=10V,ID 1.3A,f=2.3GHz

∆Vf method

A
S
V

dBm

dB

%

˚C/W

Nov. ´97

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF0910A

L, S BAND POWER GaAs FET

6

VDS=3V
Ta=25˚C

4

2

0

-3

-2 0

-1 6

GATE TO SOURCE VOLTAGE VGS(V)

PO & add vs. Pin

(f=2.3GHz)

ID vs. VGS

40

30

VDS=10V
ID=1.3A

PO

Gp=11 10 9 dB

ID vs. VDS

6

VGS=-0.5V/Step
Ta=25˚C

VGS=0V

4

2

0

0

2 5

1 3 4

DRAIN TO SOURCE VOLTAGE VDS(V)

GLP,P1dB, ID and add vs. VDS

(f=2.3GHz)

ID=1.3A13
12
11
10
39

37

GLP

P1dB

50

20

0

ηadd

20

30

40
30
20
10
0

INPUT POWER Pin(dBm)

35

40

20

6

8

ηadd

10

VDS(V)

Nov. ´97

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF0910A

L, S BAND POWER GaAs FET

S11 ,S22 vs. f.

+j50

+j25

3.0GHz

+j10

0

-j10

S11

S22

0.5GHz

-j25

3.0GHz

25 50 100 250

-j50

S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A)

Freq.

(GHz)

0.50

0.60

0.70

0.80

0.90

1.00

1.10

1.20

1.30

1.40

1.50

1.60

1.70

1.80

1.90

2.00

2.10

2.20

2.30

2.40

2.50

2.60

2.70

2.80

2.90

3.00

S11 S21 S12 S22

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

0.962

0.961

0.960

0.959

0.958

0.957

0.956

0.955

0.954

0.952

0.950

0.948

0.946

0.944

0.941

0.938

0.934

0.930

0.926

0.922

0.918

0.913

0.907

0.902

0.895

0.885

-155.5

-159.7

-163.4

-166.8

-168.4

-171.3

-173.8

-175.4

-176.8

-178.7

-179.7

178.4

177.2

176.0

174.7

174.3

173.3

172.3

171.2

169.9

169.0

167.6

166.1

164.6

163.3

162.0

3.762

3.339

2.768

2.460

2.219

2.021

1.830

1.691

1.590

1.500

1.425

1.352

1.330

1.255

1.201

1.040

0.993

0.977

0.949

0.921

0.909

0.900

0.876

0.873

0.843

0.832

+j100

-j100

97.8

93.6

90.8

87.5

87.1

84.1

82.2

80.2

78.0

75.7

73.7

71.6

69.9

67.7

66.2

65.3

63.3

61.7

59.1

57.0

55.4

54.3

52.2

49.9

48.4

45.5

+j250

-j250

Ta=25˚C
VDS=10V
ID=1.3A

0.0080

0.0090

0.0110

0.0130

0.0140

0.0149

0.0156

0.0172

0.0182

0.0189

0.0192

0.0195

0.0219

0.0224

0.0225

0.0235

0.0239

0.0249

0.0258

0.0265

0.0275

0.0280

0.0286

0.0296

0.0310

0.0320

±180˚

5

50.0

49.9

48.5

47.5

46.5

46.0

45.6

44.6

44.0

43.5

42.3

40.9

40.3

39.0

38.5

38.0

37.2

36.5

35.8

35.3

34.6

33.6

32.5

31.2

30.2

29.1

S21 ,S12 vs. f.

3.0GHz

34 2 1

I S21 I

0.869

0.869

0.867

0.865

0.860

0.854

0.845

0.840

0.832

0.825

0.818

0.805

0.795

0.782

0.773

0.757

0.750

0.740

0.725

0.708

0.687

0.672

0.662

0.642

0.629

0.610

S21

0.5GHz

-177.6

-179.6

+90˚

0

0.1

0.2

-90˚

178.5

178.2

177.6

176.8

175.6

176.6

176.1

175.7

175.3

175.1

174.7

174.0

173.4

174.4

174.2

173.4

172.7

172.2

171.6

170.3

168.9

167.7

166.9

159.4

S12

0.5GHz

K

0.752

0.795

0.835

0.842

0.883

0.902

0.943

1.025

1.055

1.085

1.125

1.175

1.195

1.212

1.256

1.285

1.295

1.305

1.355

1.395

1.415

1.435

1.454

1.475

1.495

1.525

0˚

MSG/MAG

(dB)

25.0

24.8

24.7

23.5

23.0

23.1

22.4

21.5

20.0

19.0

18.5

17.8

17.0

16.9

16.0

15.4

14.8

14.5

14.2

13.8

13.5

12.8

12.3

11.9

10.8

10.5

Nov. ´97