Page 1
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
Test conditions
ηadd
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
MGF0909A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• High output power
P1dB=38dBm(TYP.) @f=2.3GHz
• High power gain
GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm
• High power added efficiency
ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm
APPLICATION
For UHF Band power amplifiers
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
• ID=1.3A
• Rg=100Ω
• Refer to Bias Procedure
OUTLINE DRAWING
2 2
ø2.2
GF-7
3
5.0
9.0±0.2
14.0
1
0.6±0.2
Unit:millimeters
1
GATE
2
SOURCE
3
DRAIN
Symbol Parameter Ratings
VGSO
VGDO
ID
IGR
IGF
PT
Tch
Tstg
*1:TC=25˚C
Gate to source voltage
Gate to drain voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-65 to +175
-15
-15
5.0 A
15
31.5
27.3
175
Unit
V
V
mA
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
-2
37
10
Limits
Typ MaxMin
–
–
–
–
–
–
1.5
38
11
45
–
5
-5
–
–
–
–
5.5
Symbol Unit
IDSS
VGs(off)
gm
P1dB
GLP
Rth(ch-c)
*1:Channel to case *2:Pin=22dBm
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Linear power gain *2
Power added efficiency at P1dB
Thermal resistance *1
Parameter
VDS=3V,VGS=0V
VDS=3V,ID=10mA
VDS=3V,ID=1.3A
VDS=10V,ID=1.3A,f=2.3GHz
∆Vf method
A
V
S
dBm
dB
%
˚C/W
Page 2
Nov. ´97
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0909A
L, S BAND POWER GaAs FET
6
VDS=3V
Ta=25˚C
4
2
0
-3
-2 0
-1 6
GATE TO SOURCE VOLTAGE VGS(V)
PO & add vs. Pin
(f=2.3GHz)
ID vs. VGS
40
30
VDS=10V
ID=1.3A
PO
GP=11 10 9 dB
ID vs. VDS
6
VGS=-0.5V/Step
Ta=25˚C
VGS=0V
4
2
0
0
2 5
1 3 4
DRAIN TO SOURCE VOLTAGE VDS(V)
GLP,P1dB, ID and add vs. VDS
(f=2.3GHz)
ID=1.3A13
12
11
10
39
37
GLP
P1dB
50
20
0
ηadd
20
30
40
30
20
10
0
INPUT POWER Pin(dBm)
35
40
20
6
8
ηadd
10
VDS(V)
Page 3
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
MGF0909A
L, S BAND POWER GaAs FET
+j10
0
-j10
+j25
3.0GHz
3.0GHz
S22
S11
-j25
S11 ,S22 vs. f.
+j50
+j100
25 50 100 250
-j100
-j50
+j250
-j250
Ta=25˚C
VDS=10V
ID=1.3A
±180˚
S21 ,S12 vs. f.
+90˚
3.0GHz
-90˚
0
0.1
0.2
3.0GHz
S12
0˚
0.5GHz
S21
5
34 2 1
0.5GHz
I S21 I
S PARAMETERS (Ta=25˚C,VDS=10V,ID=1.3A)
Freq.
(GHz)
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
S11 S21 S12 S22
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
0.968
0.966
0.966
0.965
0.964
0.963
0.961
0.960
0.959
0.959
0.959
0.958
0.958
0.957
0.958
0.958
0.957
0.956
0.954
0.954
0.953
0.953
0.953
0.948
0.956
0.944
-155.5
-159.7
-163.4
-166.8
-168.4
-171.3
-173.8
-175.4
-176.8
-178.7
-179.7
178.4
177.2
176.0
174.7
174.3
173.3
172.3
171.2
169.9
169.0
167.6
166.1
164.6
163.3
162.0
3.763
3.340
2.768
2.460
2.219
2.021
1.831
1.613
1.591
1.500
1.425
1.359
1.301
1.255
1.201
1.040
0.993
0.977
0.949
0.921
0.909
0.901
0.876
0.873
0.843
0.832
97.8
93.6
90.8
87.5
87.1
84.1
82.2
80.2
78.0
75.7
73.7
71.6
69.9
67.7
66.2
65.3
63.3
61.7
59.1
57.0
55.4
54.3
52.2
49.9
48.4
45.5
0.013
0.013
0.014
0.014
0.015
0.015
0.016
0.016
0.017
0.017
0.018
0.018
0.019
0.019
0.020
0.021
0.021
0.022
0.022
0.023
0.023
0.024
0.024
0.025
0.025
0.025
13.2
14.6
16.5
18.2
20.6
22.5
24.1
25.8
27.8
29.5
31.2
33.8
35.4
37.6
39.5
41.5
43.1
44.8
46.5
48.7
50.8
52.6
54.3
55.2
57.3
58.0
0.823
0.823
0.822
0.822
0.820
0.819
0.818
0.814
0.804
0.807
0.805
0.801
0.795
0.789
0.785
0.784
0.783
0.783
0.782
0.780
0.779
0.778
0.778
0.776
0.775
0.773
-177.6
-179.6
178.5
178.2
177.6
176.8
175.6
176.6
176.1
175.7
175.3
175.1
174.7
174.0
173.4
174.4
174.2
173.4
172.7
172.2
171.6
170.3
168.9
167.7
166.9
165.1
K
0.652
0.713
0.755
0.782
0.825
0.855
0.875
0.955
0.985
0.996
1.105
1.135
1.145
1.185
1.205
1.194
1.203
1.235
1.295
1.325
1.345
1.362
1.403
1.452
1.523
1.554
MSG/MAG
(dB)
25.4
25.2
24.7
23.4
23.1
23.0
22.4
19.0
19.2
19.0
18.9
18.5
18.0
16.9
16.5
16.2
15.5
14.9
14.7
14.5
13.8
12.8
12.3
11.9
10.8
10.5
Loading...