Datasheet MGP15N35CL, MGB15N35CLT4 Datasheet (MOTOROLA)

MGP15N35CL,
MGB15N35CL,
MGC15N35CL

Internally Clamped
N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.

• Gate–Emitter ESD Protection

• T emperature Compensated Gate–Collector Voltage Clamp Limits

Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage to Interface Power Loads to Logic or

Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• Optional Gate Resistor (R

)

G

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N–CHANNEL IGBT

15 A, 350 V

V

CE(on)

G

= 1.8 V MAX

C

R

G

R

GE

E

MAXIMUM RATINGS (T

Rating

Collector–Emitter Voltage V
Collector–Gate Voltage V
Gate–Emitter Voltage V
Collector Current–Continuous

@ TC = 25°C

Total Power Dissipation

@ TC = 25°C
Derate above 25°C

Operating and Storage Temperature

Range

= 25°C unless otherwise noted)

J

Symbol Value Unit

CES
CER

P

TJ, T

GE

I

C

D

stg

380 V
380 V

22 V
15 A

136

1.0

–55 to

175

DC
DC
DC
DC

Watts

W/°C

°C

MARKING

DIAGRAMS

TO–220

CASE 221A

STYLE 9

G

C

E

D2PAK

CASE 418B

STYLE 3

A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W= Work Week

ORDERING INFORMATION

Device Package Shipping

MGP15N35CL TO–220 50 Units/Rail
MGB15N35CL T4 D2PAK 800 Tape & Reel
MGC15N35CL Die Options

GP15N35CL

ALYYWW

GB15N35CL

ALYYWW

Not Applicable

 Semiconductor Components Industries, LLC, 2000

April, 2000 – Rev. 0

1 Publication Order Number:

MGP15N35CL/D

MGP15N35CL, MGB15N35CL, MGC15N35CL

UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ t150°C)

Characteristic Symbol Value Unit

Single Pulse Collector–to–Emitter Avalanche Energy

VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient TO–220 R

D2PAK R

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T

E

AS

θJC
θJA
θJA

L

300

mJ

150

1.0 °C/W

62.5
50

275 °C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Clamp V oltage BV

Zero Gate Voltage Collector Current I

Reverse Collector–Emitter Leakage Current I
Gate–Emitter Clamp Voltage BV
Gate–Emitter Leakage Current I
Gate Resistor (Optional) R
Gate Emitter Resistor R

CES

CES

ECS

GES

GES

G

GE

IC = 2 mA

TJ = –40°C to 175°C

VCE = 300 V,

VGE = 0, TJ = 25°C

VCE = 300 V,

VGE = 0, TJ = 150°C

VCE = –24 V – – 1.0 mA

IG = 5 mA 17 – 22 V

VGE = 10 V 384 – 1000 µA

– – 70 –
– 10 – 26

320 350 380 V

– – 40

– – 200

ON CHARACTERISTICS*

Gate Threshold Voltage V

Threshold Temperature Coefficient (Negative) – – – 4.4 – mV/°C
Collector–to–Emitter On–Voltage V
Collector–to–Emitter On–Voltage V

Forward Transconductance gfs VCE = 5 V, IC = 6 A 8.0 15 – Mhos

GE(th)

CE(on)
CE(on)

IC = 1 mA

VGE = V

IC = 6 A, VGE = 4 V – – 1.8 V

VGE = 4.5 V,

TJ = 150°C

CE

IC = 10 A,

1.0 1.8 2.1 V

– – 1.8 V

DYNAMIC CHARACTERISTICS

Input Capacitance C
Output Capacitance C
Transfer Capacitance C

*Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.

ISS
OSS
RSS

VCC = 15 V – 1000 –

VGE = 0 V – 130 –

f = 1 MHz – 5.0 –

µA

DC

DC

DC

DC

Ω

kΩ

DC

DC
DC

pF

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MGP15N35CL, MGB15N35CL, MGC15N35CL

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

SWITCHING CHARACTERISTICS*

Turn–Off Delay Time t

Fall Time t

Turn–On Delay Time t

Rise Time t

Gate Charge

*Pulse Test: Pulse Width v 300 µS, Duty Cycle v 2%.

Symbol Test Conditions Min Typ Max Unit

d(off)

f

d(on)

r

Q

T

Q

1

Q

2

VCC = 300 V,

IC = 10 A

RG = 1 kΩ,

L = 300 µH

VCC = 10 V,

IC = 6.5 A

RG = 1 kΩ,

RL = 1 Ω

VCC = 300 V – TBD –

IC = 15 A – TBD –

VGE = 5 V – TBD –

– 13 –

– 6.0 –

– 1.0 –

– 5.0 –

µSec

µSec

nC

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3

MGP15N35CL, MGB15N35CL, MGC15N35CL

45

VGE = 10.0 V

40

VGE = 5.0 V

35
30
25
20
15
10

, COLLECTOR CURRENT (AMPS)

5

C

I

0

012345678

V

COLLECTOR TO EMITTER VOLTAGE (VOLTS)

CE,

VGE = 4.0 V

VGE = 3.0 V

Tj = 25°C

Figure 1. Output Characteristics Figure 2. Output Characteristics

30

VCE = 10 V

25

20

15

10

5

, COLLECTOR CURRENT (AMPS)

C

I

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V

GE,

Tj = 150°C

Tj = 25°CT

GATE T O EMITTER VOLTAGE (VOLTS) Tj, JUNCTION TEMPERATURE (°C)

= 40°C

j

45
40
35
30
25
20
15
10

, COLLECTOR CURRENT (AMPS)

5

C

I

0

2.0

1.8

1.5

1.3

1.0

0.8

0.5

0.3

0.0

, COLLECTOR TO EMITTER VOLTAGE (VOLTS)

CE

V

VGE = 10.0 V

VGE = 5.0 V

012345678

V

COLLECTOR TO EMITTER VOLTAGE (VOLTS)

CE,

IC = 15 A

IC = 10 A

IC = 5 A

VGE = 15 V

–50 –25 0 25 50 75 100 125 1504.5 5

VGE = 4.0 V

VGE = 3.0 V

Tj = 150°C

Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation V oltage

10000

C

1000

100

C, CAPACITANCE (pF)

ISS

C

OSS

10

C

RSS

1

0 20 40 60 80 100 120 140 160 180 200

V

COLLECTOR TO EMITTER VOLTAGE (VOLTS)

CE,

Figure 5. Capacitance Variation Figure 6. Threshold V oltage versus Temperature

2.5

2.0

1.5

1.0

0.5

THRESHOLD VOLTAGE (VOLTS)

0.0
–50 –25 0 25 50 75 100 125 150

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versus Junction T emperature

Mean + 4 σ

Mean

Mean – 4 σ

TEMPERATURE (°C)

IC = 1 mA

MGP15N35CL, MGB15N35CL, MGC15N35CL

20

VCC = 300 V

18

VGE = 5.0 V

16

S)SWITCHING TIME (

Tj = 25°C

m

IC = 10 A

14

L = 300 µH

12
10

8
6
4
2
0

250 500 750 1000

RG, GATE RESISTANCE (OHMS) RG, GATE RESISTANCE (OHMS)

t

d(off)

t

f

20
18

16

S)SWITCHING SPEED (

m

14
12
10

8
6
4
2
0

250 500 750 1000

t

d(off)

t

f

VCC = 300 V
VGE = 5.0 V
Tj = 150°C
IC = 10 A
L = 300 µH

Figure 7. Switching Speed versus Gate Resistance Figure 8. Switching Speed versus Gate Resistance

20

VCC = 300 V

18

VGE = 5.0 V

16

14

12

10

8
6

4
2

0

RG = 1000 Ω
IC = 10 A
L = 300 µH

0–25–50 25 50 75 100 125 150

S)SWITCHING TIME (

m

t

d(off)

t

f

20
18

16

S)SWITCHING TIME (

m

14
12

10

8

VCC = 300 V

6

VGE = 5.0 V

4

RG = 1000 Ω
Tj = 150°C

2

L = 300 µH

0

420 6 810121416

t

d(off)

t

f

TC, CASE TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS)

Figure 9. Switching Speed versus Case T emperature Figure 10. T otal Switching Losses

versus Collector Current

30

25

20

15

10

, LATCH CURRENT (AMPS)

L

5

I

0

25°C

150°C

210345789106

INDUCTOR (mH) TEMPERATURE (°C)

VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω

20
18

16
14
12
10

8
6

, LATCH CURRENT (AMPS)

4

L

I

2
0

3.0 mH

6.0 mH

VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω

25 1250 50 75 175150

100

Figure 11. Latch Current versus Inductor (Typical) Figure 12. Latch Current versus Temperature (Typical)

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MGP15N35CL, MGB15N35CL, MGC15N35CL

P ACKAGE DIMENSIONS

TO–220

CASE 221A–09

ISSUE AA

SEATING

–T–

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R
J

G

D

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

STYLE 9:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

D2PAK

CASE 418B–03

ISSUE D

–T–

SEATING
PLANE

–B–

G

C

E

V

4

A

231

S

K

J

3 PL

D

0.13 (0.005) T

M

M

B

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX

A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89

E 0.045 0.055 1.14 1.40
G 0.100 BSC 2.54 BSC
H 0.080 0.110 2.03 2.79
J 0.018 0.025 0.46 0.64
K 0.090 0.110 2.29 2.79
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

MILLIMETERSINCHES

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Notes

MGP15N35CL, MGB15N35CL, MGC15N35CL

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MGP15N35CL, MGB15N35CL, MGC15N35CL

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MGP15N35CL/D