Datasheet MGA-86563-BLK, MGA-86563-TR1 Datasheet (HP)

0.5 – 6 GHz Low Noise GaAs
MMIC Amplifier

Technical Data

MGA-86563

Features

• Ultra-Miniature Package

• Internally Biased, Single
+5 V Supply (14 mA)

• 1.6 dB Noise Figure at

2.4 GHz

• 21.8 dB Gain at 2.4 GHz

• +3.1 dBm P

at 2.4 GHz

1dB

Applications

• LNA or Gain Stage for ISM,
PCS, MMDS, GPS, TVRO,
and Other C band
Applications

Equivalent Circuit

RF

INPUT

1

GROUND 2, 3, 5, 6

Surface Mount Package SOT-363 (SC-70)

Pin Connections and Package Marking

INPUT

Note:

Package marking provides orientation
and identification.

16

86

GND

25

GND

34

4

RF OUTPUT

AND V

GND

GND

OUTPUT
and V

d

Description

Hewlett-Packard’s MGA-86563 is
an economical, easy-to-use GaAs
MMIC amplifier that offers low
noise figure and excellent gain for
applications from 0.5 to 6 GHz.
Packaged in an ultra-miniature
SOT-363 package, it requires half
the board space of the SOT-143.

The MGA-86563 may be used
without impedance matching as a
high performance 2 dB NF gain
block. Alternatively, with the
addition of a simple shunt-series
inductor at the input, the device
noise figure can be reduced to

1.6␣ dB at 2.4 GHz. For 1.5 GHz

d

applications and above, the

output is well matched to 50 Ω.

Below 1.5 GHz, gain can be
increased by using conjugate
matching.

The circuit uses state-of-the-art
PHEMT technology with self­biasing current sources, a source­follower interstage, resistive
feedback, and on-chip impedance
matching networks. A patented,
on-chip active bias circuit allows
operation from a single +5 V
power supply. Current consump­tion is only 14 mA, making this
part suitable for battery powered
applications.

5965-9686E

6-220

MGA-86563 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

d

V

in

P

in

T

ch

T

STG

Device Voltage, RF V 9
Output to Ground

RF Input Voltage to V +0.5
Ground –1.0

CW RF Input Power dBm +13

Channel Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

θ

= 160°C/ W

ch-c

Notes:

1. Operation of this device above any one
of these limits may cause permanent
damage.

2. T

= 25°C (T

C

temperature at the package pins where
contact is made to the circuit board).

is defined to be the

C

[2]

:

Electrical Specifications, T

= 25°C, ZO = 50 Ω unless noted, V

C

= 5 V

d

Symbol Parameters and Test Conditions Units Min. Typ. Max.

G

NF

NF

test

test

Gain in Test Circuit

Noise Figure in Test Circuit

O

Optimum Noise Figure f = 0.9 GHz dB 2.0

[1]

[1]

f = 2.0 GHz 17 20

f = 2.0 GHz 1.8 2.3

(Tuned for lowest noise figure) f = 2.0 GHz 1.5

f = 2.4 GHz 1.6
f = 4.0 GHz 1.7
f = 6.0 GHz 2.0

G

A

Associated Gain at NF

O

f = 0.9 GHz dB 20.8

(Tuned for lowest noise figure) f = 2.0 GHz 22.7

f = 2.4 GHz 22.5
f = 4.0 GHz 18.0
f = 6.0 GHz 13.7

P

1 dB

Output Power at 1 dB Gain Compression f = 0.9 GHz dBm 3.6

(50 Ω Performance) f = 2.0 GHz 4.1

f = 2.4 GHz 4.2
f = 4.0 GHz 4.3
f = 6.0 GHz 3.3

IP

3

VSWR

VSWR

I

d

Note:

1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.

Third Order Intercept Point f = 2.4 GHz dBm +15

Input VSWR f = 2.4 GHz 2.3:1

in

Output VSWR f = 2.4 GHz 1.7:1

out

Device Current mA 14

6-221

MGA-86563 Typical Performance, T

P

1 dB

(dBm)

0

0

FREQUENCY (GHz)

10

4

2

6

8

4

123 5

7.0 V

6

5.5 V

5.0 V

4.5 V

5

30

= 25° C, V

C

= 5 V

d

10

4

3

2

NOISE FIGURE (dB)

1

0

0

2

1

FREQUENCY (GHz)

3

+85

+25

-40

45

Figure 1. Minimum Noise Figure
(Optimum Tuning) vs. Frequency and
Temperature.

5

4

3

2

NOISE FIGURE (dB)

1

25

20

15

10

ASSOCIATED GAIN (dB)

5

0

0

6

1

3

2

FREQUENCY (GHz)

Figure 2. Associated Gain (Optimum
Tuning) vs. Frequency and
Temperature.

30

25

20

5.5 V

5.0 V

4.5 V

15

10

ASSOCIATED GAIN (dB)

5

45

8

6

-40

(dBm)

+25
+85

6

1 dB

P

-40

4

+25
+50

+85

2

0

0

123 5

FREQUENCY (GHz)

Figure 3. Output Power for 1 dB Gain

Compression (into 50 Ω) vs.

Frequency and Temperature.

5.5 V

5.0 V

4.5 V

4

6

0

0

12 4

FREQUENCY (GHz)

3

5

6

Figure 4. Minimum Noise Figure
(Optimum Tuning) vs. Frequency and
Voltage.

4.0

3.5

3.0

2.5

VSWR (n:1)

2.0
OUTPUT

1.5

1.0

0

Figure 7. Input and Output VSWR

(into 50 Ω) vs. Frequency.

INPUT

3

2

1

FREQUENCY (GHz)

45

6

0

0

1

3

2

FREQUENCY (GHz)

45

Figure 5. Associated Gain (Optimum
Tuning) vs. Frequency and Voltage.

4.0

3.5

3.0

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

NF 50

NFopt

GA 50

0

0

4

2

6

FREQUENCY (GHz)

810

Figure 8. 50 Ω Noise Figure and

Associated Gain vs. Frequency.

6

Figure 6. Output Power for 1 dB Gain

Compression (into 50 Ω) vs.

Frequency and Voltage.

32

24

16

8

0

12

16

14
12
10

8
6

CURRENT (mA)

4

ASSOCIATED GAIN (dB)

2
0

0

1

2

3

VOLTAGE (V)

Figure 9. Device Current vs. Voltage.

4

56

-40
+25
+50
+85

7

6-222

MGA-86563 Typical Scattering Parameters

Freq. S

11

S

21

[1]

, T

= 25°C, ZO = 50 Ω, V

C

S

12

= 5 V

d

S

22

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. Factor

0.1 0.84 -17 3.1 1.42 76 -39.8 0.010 15 0.85 -15 3.27

0.5 0.57 -29 14.7 5.41 41 -44.3 0.006 -23 0.59 -39 6.77

1.0 0.55 -41 18.9 8.77 4 -51.2 0.003 -2 0.46 -53 10.49

1.5 0.53 -57 20.8 10.97 -29 -52.1 0.002 70 0.38 -66 14.23

2.0 0.47 -73 21.7 12.14 -62 -45.2 0.005 96 0.32 -78 5.94

2.5 0.38 -89 21.8 12.33 -94 -40.7 0.009 102 0.24 -89 3.78

3.0 0.26 -104 21.3 11.61 -125 -37.4 0.014 100 0.16 -99 2.92

3.5 0.14 -115 20.2 10.23 -152 -34.4 0.018 97 0.09 -102 2.75

4.0 0.04 -106 18.8 8.75 -177 -32.6 0.023 92 0.03 -82 2.58

4.5 0.04 -6 17.4 7.44 162 -30.9 0.027 88 0.03 1 2.58

5.0 0.07 2 16.1 6.41 143 -29.6 0.032 83 0.05 20 2.53

5.5 0.09 -4 14.9 5.57 126 -28.1 0.038 78 0.06 19 2.45

6.0 0.11 -17 13.9 4.93 110 -26.0 0.044 72 0.08 14 2.38

6.5 0.12 -28 12.9 4.40 94 -24.9 0.050 65 0.08 4 2.35

7.0 0.13 -36 12.0 3.96 79 -23.8 0.057 59 0.09 -3 2.29

7.5 0.15 -44 11.1 3.58 65 -22.6 0.065 53 0.11 -12 2.21

8.0 0.17 -53 10.4 3.30 51 -22.6 0.074 44 0.13 -21 2.10

K

opt

[1]

,

MGA-86563 Typical Noise Parameters

T

= 25°C, ZO = 50 Ω, V

C

Frequency NF

= 5 V

d

o

Γ

(GHz) (dB) Mag. Ang. R

5 2.8 0.61 4 1.16

1.0 1.8 0.56 24 0.47

1.5 1.5 0.50 33 0.34

2.0 1.5 0.45 40 0.38

2.5 1.6 0.41 50 0.33

3.0 1.6 0.38 57 0.30

4.0 1.7 0.32 73 0.28

5.0 1.9 0.24 98 0.27

6.0 2.1 0.15 131 0.24

Note:

1. Reference plane per Figure 11 in Applications Information section.

/50 Ω

N

6-223

MGA-86563 Applications Information

Introduction

The MGA-86563 is a high gain,
low noise RF amplifier for use in
wireless RF applications within
the 0.5 to 6 GHz frequency range.
The MGA-86563 is a three-stage,
GaAs Microwave Monolithic
Integrated Circuit (MMIC) ampli­fier that uses internal feedback to
provide wideband gain and
impedance matching.

A patented, active bias circuit
makes use of current sources to
“re-use” the drain current in all
three stages of gain, thus minimiz­ing the required supply current
and decreasing sensitivity to
variations in power supply
voltage.

Test Circuit

The circuit shown in Figure 10 is
used for 100% RF testing of Noise
Figure and Gain. The input of this
circuit is fixed tuned for a conju­gate power match (maximum
power transfer, or, minimum
Input VSWR) at 2 GHz. Tests in
this circuit are used to guarantee
the NF
shown in the Electrical Specifica­tions Table.

The 3.3 nH inductor, L1
(Coilcraft, Cary, IL or equivalent)
in series with the input of the
amplifier matches the input to

50 Ω at 2 GHz.

test

and G

parameters

test

The parameter test circuit uses a
high impedance RF choke to
apply Vd to the MMIC while
isolating the power supply from
the RF Output of the amplifier.

Phase Reference Planes

The positions of the reference
planes used to measure S-

Parameters and to specify Γ

opt

for
the Noise Parameters are shown
in Figure 11. As seen in the
illustration, the reference planes
are located at the extremities of
the package leads.

Biasing

The MGA-86563 is a voltage­biased device and operates from
a single +5 volt power supply.
With a typical current drain of

only 14 mA, the MGA-86563 is
suitable for use in battery
powered applications. RF
performance is very stable over a
wide variation of power supply
voltage.

REFERENCE

PLANES

TEST CIRCUIT

Figure 11. Reference Planes.

Since DC bias is applied to the
MGA-86563 through the RF
Output pin, some method of
isolating the RF from the DC
must be provided. An RF choke
or length of high impedance
transmission line is typically used
for this purpose.

SOT-363 PCB Layout

A PCB pad layout for the minia­ture SOT-363 (SC-70) package
used by the MGA-86563 is shown
in Figure 12 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated
assembly equipment without
adding parasitics that could
impair the high frequency RF
performance of the MGA-86563.
The layout is shown with a
nominal SOT-363 package
footprint superimposed on the
PCB pads.

0.026

0.075

0.035

0.016

Figure 12. PCB Pad Layout
(dimensions in inches).

BOARD MATERIAL = 1/16" FR-4

L1

(50 Ω)

3.3 nH
w = 110

I = 110

RF

w = 110

INPUT

Figure 10. Test Circuit for 2 GHz.

w = 15
I = 1000

RFC
(28 nH)

w = 110

(50 Ω)

C1

V

d

RF
OUTPUT

6-224

RF Layout

The RF layout in Figure 13 is
suggested as a starting point for
amplifier designs using the MGA­86563 MMIC. Adequate grounding
is needed to obtain maximum
performance and to obviate
potential instability. All four
ground pins of the MMIC should
be connected to RF ground by
using plated through holes (vias)
near the package terminals.

It is recommended that the PCB
pads for the ground pins NOT be
connected together underneath
the body of the package. PCB
traces hidden under the package
cannot be adequately inspected
for SMT solder quality.

PCB Material

FR-4 or G-10 printed circuit board
material is a good choice for most
low cost wireless applications.
Typical board thickness is 0.020

or 0.031 inches. The width of 50 Ω

microstriplines in PC boards of
these thicknesses is also
convenient for mounting chip
components such as the series
inductor that is used at the input
for impedance matching or for
DC blocking capacitors.

For applications requiring the
lowest noise figures, the use of

50 Ω

RF INPUT

50 Ω

86

RF OUTPUT
AND V

PTFE/glass dielectric materials
may be warranted to minimize
transmission line losses at the
amplifier input. A 0.5 inch length

of 50 Ω microstripline on FR-4

has approximately 0.3 dB loss at
4␣ GHz which will add directly to
the noise figure of the
MGA-86563.

Typical Application Circuit

A typical implementation of the
MGA-86563 as a low noise ampli­fier is shown in Figure 14.

A 50 Ω microstripline with a

series DC blocking capacitor, C1,
is used to feed RF to the MMIC.
The input of the MGA-86563 is
already partially matched for

noise figure and gain to 50 Ω. The

use of a simple input matching
circuit, such as a series inductor,
will minimize amplifier noise
figure. Since the impedance
match for NFO (minimum noise
figure) is very close to a
conjugate power match, a low
noise figure can be realized
simultaneously with a low input
VSWR.

DC power is applied to the MMIC
through the same pin that is

shared with the RF output. A 50 Ω

microstripline is used to connect
the device to the following stage.
A bias decoupling network is used
to feed in Vd while simultan­eously providing a DC block to
the RF signal. The bias

d

C3

decoupling network shown in
Figure 14, consisting of resistor
R1, a short length of high
impedance microstripline, and
bypass capacitor C3, will provide
excellent performance over a
wide frequency range. Surface
mount chip inductors could be
used in place of the high
impedance transmission line to
act as an RF choke. Consideration
should be given to potential
resonances and signal radiation
when using lumped inductors.

For operation at frequencies
below approximately 2 GHz, the
addition of a simple impedance
matching circuit to the output
will increase the gain and output
power by 0.5 to 1.5 dB. The
output matching circuit will not
effect the noise figure.

A small value resistor placed in
series with the Vdd line may be
useful to “de-Q” the bias circuit.
Typical values of R1 are in the

10 Ω to 100 Ω range. Depending

on the value of resistance used,
the supply voltage may have to be
increased to compensate for volt­age drop across R1. The power
supply should be capacitively
bypassed (C3) to ground to
prevent undesirable gain varia­tions and to eliminate unwanted
feedback through the bias lines
that could cause oscillation.

V

d

Figure 13. RF Layout.

HIGH Z

C1

50 Ω

Figure 14. Typical Amplifier Circuit.

50 Ω 50 Ω

R1

L1

6-225

C2

50 Ω

Higher Bias Voltages

While the MGA-86563 is designed
primarily for use in +5 volt
applications, the internal bias
regulation circuitry allows it to be
operated with any power supply
voltage from +5 to +7 volts. The
use of +7 volts increases the P

1dB

by approximately 1 dBm. The
effect on noise figure, gain, and
VSWR with higher Vd is negligible.

For more information call your
nearest HP sales office.

Package Dimensions

Outline 63 (SOT-363/SC-70)

1.30 (0.051)
REF.

MGA-86563 Part Number Ordering Information

Part Number Devices per Container Container

MGA-86563-TR1 3000 7" reel

MGA-86563-BLK 100 Antistatic bag

2.20 (0.087)

2.00 (0.079)

0.10 (0.004)

0.00 (0.00)

0.25 (0.010)

0.15 (0.006)

1.35 (0.053)

1.15 (0.045)

0.650 BSC (0.025)

2.20 (0.087)

1.80 (0.071)

0.30 REF.

1.00 (0.039)

0.80 (0.031)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

10°

0.30 (0.012)

0.10 (0.004)

0.425 (0.017)
TYP.

0.20 (0.008)

0.10 (0.004)

6-226

Device Orientation

REEL

CARRIER

8 mm

TAPE

USER
FEED
DIRECTION

COVER TAPE

Tape Dimensions and Product Orientation

For Outline 63

P

P

0

C

TOP VIEW

4 mm

86 86 86 86

D

END VIEW

P

2

E

F

W

CAVITY

PERFORATION

CARRIER TAPE

COVER TAPE

DISTANCE

(CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)

t

1

8° MAX.

A

0

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

A

LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER

DIAMETER
PITCH
POSITION

WIDTH
THICKNESS

WIDTH
TAPE THICKNESS

CAVITY TO PERFORATION
(WIDTH DIRECTION)

CAVITY TO PERFORATION
(LENGTH DIRECTION)

B
K
P
D

D
P
E

W
t

1

C
T

F

P

0
0
0

1

0

t

2

2.24 ± 0.10

2.34 ± 0.10

1.22 ± 0.10

4.00 ± 0.10

1.00 + 0.25

1.55 ± 0.05

4.00 ± 0.10

1.75 ± 0.10

8.00 ± 0.30

0.255 ± 0.013

5.4 ± 0.10

0.062 ± 0.001

3.50 ± 0.05

2.00 ± 0.05

K

0

0.088 ± 0.004

0.092 ± 0.004

0.048 ± 0.004

0.157 ± 0.004

0.039 + 0.010

0.061 ± 0.002

0.157 ± 0.004

0.069 ± 0.004

0.315 ± 0.012

0.010 ± 0.0005

0.205 ± 0.004

0.0025 ± 0.00004

0.138 ± 0.002

0.079 ± 0.002

6-227

D

1

5° MAX.

B

0