Datasheet MF70-1200, MF70-1400, MF70-1600 Datasheet (DYNEX)

MF70

MF70

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4195-2.1 DS1955-3.0 January 2000

APPLICATIONS

■ Inverse Parallel Or Series Connected Diode

■ Power Supplies

■ High Frequency Applications

FEATURES

■ Glass Passivation

■ Fast Recovery Characteristics

■ High Voltage Capabilities

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

MF70-1600
MF70-1400
MF70-1200

1600
1400
1200

Conditions

V

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V
I

F(AV)

I

FSM

Q
t

rr

RRM

r

1600V

70A

700A
26µC

915ns

Lower voltage grades available.
For stud anode add suffix 'R' to type number.

See Package Details for further information.

Outline type code: DO5.

CURRENT RATINGS

Symbol Parameter Conditions UnitsMax.

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load, T

= 75oC 110 A

T

case

T

= 75oC90A

case

= 75oC70A

case

1/8

MF70

SURGE RATINGS

ParameterSymbol

FSM

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

th(j-c)

th(c-h)

T

stg

Thermal resistance - junction to caseR

Thermal resistance - case to heatsinkR

Virtual junction temperature

vj

- Mounting torque

Parameter

Conditions

10ms half sine; with 100% V

10ms half sine;

= 125oC

Tj

Conditions Max. Units

dc

RRM, Tj

= 125oC

Max. Units

700 A

2450 A

Min.

- 0.37oC/W

Mounting torque 3.5Nm
with mounting compound

Forward (conducting) - 125
Reverse (blocking)

- 125

125-55Storage temperature rangeT

Use torque wrench

3.83.2

o

C/W- 0.2

Nm

o

o

˚C

2

sI2t for fusingI2t

C
C

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RM

t

rr

Q

t

rr

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge

r

Reverse recovery time

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC80-V

Parameter

Conditions Max.

At 210A peak, T
At V

, T

RRM

case

IF = 1A, diRR/dt = 25A/µs
T

= 25oC, VR = 100V

case

I

= 100A, diRR/dt = 100A/µs

F

T

= 25oC, VR = 100V

case

= 25oC - 2.0 V

case

= 100oC-mA

10

- 300

-26µC

- 915 ns

At Tvj = 125oC - 1.3 V

At Tvj = 125oC - 3.34 mΩ

ns

2/8

CURVES

500

Measured under pulse

conditions

400

80

T

case

MF70

= 25˚C

60

95%

300

40

5%

200

20

Instantaneous forward current - (A)

100

Tj = 125˚C

Tj = 25˚C

0

Transient forward voltage - (V)

0

0 400 800 1200

200 600 1000

Rate of rise of forward current - (A/µs)

0 1.0 2.0 3.0

Instantaneous forward voltage - (V)

Fig.1 Maximum (limit) forward characteristics Fig.2 Forward recovery voltage vs rate of rise of

forward voltage

0.5

0.4

0.3

0.2

0.1

Thermal impedance - ˚C/W

0

0.001 0.01 0.1

Fig.3 Maximum transient thermal impedance - junction to case

Time - (s)

1.0

d.c.

10

3/8

MF70

1.05

1.0

0.9

0.8

0.7

0.6

Recovery time - (µs)

0.55
1 10 100

Rate of rise of reverse current - (A/µs)

Fig.4 Recovery time vs dIR/dt

40

T

= 125˚C

case

36
32
28
24
20
16
12

8

Recovered charge - (µC)

4
0

1 10 100

Rate of change of reverse current - (A/µs)

Fig.5 Recovered charge vs dI

/dt

R

T

= 125˚C

case

IF = 100A

95%

IF = 50A

IF = 100A

5%

IF = 50A

IF = 100A

95%

IF = 50A

IF = 100A

5%

IF = 50A

1000

1000

4/8

5000

T

case

1000

5000

10000

2500

1000

500

300

100

50Hz

Peak current - (A)

100

10 100 1000 10000

Pulse width - (µs)

Fig.6 Frequency curves - square waveform

= 55˚

MF70

(µs)

(µs)

)

500

T

case

100

10000

5000

2500

1000

500

300

Peak current - (A)

10

10 100 1000 10000

Pulse width -

Fig.7 Frequency curves - square waveform

500

100

= 85˚

50Hz

100

2.0J

1.0

Peak current - (A)

10

10 100 1000 10000

Pulse width -

Fig.8 Energy per pulse - square waveform

5000

T

case

1000

10000

5000

2500

1000

500

300

100

50Hz

Peak current - (A)

100

10 100 1000 10000

Pulse width - (µs

Fig.9 Frequency curves - sine waveform

0.5

0.2

0.1

= 55˚

5/8

MF70

(µs)

5000

T

case

1000

5000

10000

2500

1000

500

300

100

50Hz

Peak current - (A)

100

10 100 1000 10000

Pulse width - (µs)

Fig.10 Frequency curves - sine waveform

500

100

= 85˚

2.0J

1.0

Peak current - (A)

20

10 100 1000 10000

Pulse width -

Fig.11 Energy per pulse - sine waveform

0.5

0.2

0.1

6/8

MF70

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.

Hex. 17.35mm AF max

Ø4.0

2311.5

Thread 1/4 in
28 UNF 2A

Weight: 20g

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

7/8

MF70

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

8/8

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4195-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM