Datasheet MF1011B900Y Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

MF1011B900Y

Microwave power transistor

Product specification
Supersedes data of December 1994

1997 Feb 18

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

FEATURES

• Suitable for short and medium
pulse applications up to 100 µs
pulse width, duty factor 10%

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power
sharing and reduces thermal
resistance

• Internal input and output
prematching networks allow an
easier design of circuits.

APPLICATIONS

Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the
1030 MHz to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common-base class C

mb

narrowband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

=10µs;

p

f

(GHz)

1.09 50 800 ≥6 ≥40

δ =1%

PINNING - SOT448A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

2

V

CC

(V)

33

MAM045

b

P

(W)

G

L

(dB)

c

e

η

p

C

(%)

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with base connected
to flange.

Fig.1 Simplified outline and symbol.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

CM

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0 − 65 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
peak collector current tp=10µs; δ =1% − 50 A
total power dissipation Tmb<75°C; tp≤ 10 µs; δ≤1% − 1750 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

1800

handbook, halfpage

P

tot

(W)

1200

600

0

tp=10µs; δ = 1%.

05050 100 200

150

T ( C)

mb

Fig.2 Power derating curve.

MLC721

o

1997 Feb 18 3

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

CES

I

EBO

V

(BR)CBO

V

(BR)CES

thermal resistance from junction to mounting base Tj= 120 °C 0.84 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp=10µs;δ = 1%;

0.01 K/W

notes 1and 2

.

collector cut-off current IE= 0; VCB=50V 27 mA
collector cut-off current VBE= 0; VCE= 50 V 27 mA
emitter cut-off current IC= 0; VEB= 1.5 V 7 mA
collector-base breakdown voltage IC= 180 mA 65 V
collector-emitter breakdown voltage IC= 180 mA; VBE= 0 65 V

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

Class C

t

p

t

p

t

p

t

p

CONDITIONS

=10µs; δ = 1% 1.09 50 ≥800

= 0.5 µs; δ = 50%
=112µs; δ =1%
=32µs; δ = 1% 1.09 50 typ. 870 typ. 6.3 typ. 46

=25°C in a common-base test circuit as shown in Fig.3.

mb

f

(GHz)

V

(V)

CC

P

(W)

typ. 900

1.03 to 1.09 50 typ. 750 typ. 5.7 typ. 36

L

G

p

(dB)

≥6

typ. 6.5

η

C

(%)

≥40

typ. 48

1997 Feb 18 4

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

handbook, full pagewidth

30

18.5

20.0

40

0.64

4.0

7.5

5.0 21.0

C4

7.5 4.01.6 5.91.010.0

30

10.5

0.64

40

V

CC

C5

L1

input

L2

C6

Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr= 10.

Fig.3 Broadband test circuit.

1997 Feb 18 5

C7

C2

C3

output

R/L3

C1

MLC720

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

List of components (see Fig.3)

COMPONENT DESCRIPTION VALUE ORDERING INFORMATION

C1 capacitor 100 pF ATC 100A101kp50x
C2,C3 tantalum capacitor 10 µF; 50 V
C4 electrolytic capacitor 1 mF; 63 V
C5 feedthrough bypass capacitor Erie 1250-003
C6, C7 variable gigatrim capacitor 0.8 to 8 pF Tekelec 729-1
L1, L2 0.65 mm copper wire; total length = 26 mm;

height of loop = 10 mm

L3 4 turns 0.65 mm copper wire;

total length = 48 mm

R resistor 4.7 Ω; 0.5 W

1000

handbook, halfpage

P

L

(W)

800

600

400

200

0

0 100 20050 150 250

Class C pulse operation.
tp=10µs; δ = 1%; VCC= 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.

Fig.4 Load power as a function of input power.

MLC722

P (W)

i

60

handbook, halfpage

η

c

(%)

40

20

0

0 50 150 200100 250

Class C pulse operation.
tp=10µs; δ = 1%; VCC= 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.

Fig.5 Collector efficiency as a function of

input power.

MLC723

P (W)

i

1997 Feb 18 6

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

Input and optimum load impedances

V

= 50 V; typical values at PL=PL1 (see Figs 6 and 7).

CE

handbook, full pagewidth

f

(GHz)

Z

(Ω)

i

Z

L

(Ω)

1.03 0.22 + j0.19 0.14 − j0.10

1.09 0.23 + j0.12 0.12 − j0.08

1.15 0.19 + j0.06 0.09 − j0.09

1

0.5

0.2

1.03 GHz

Z

i

+ j

1.15 GHz

0

– j

0.2

1.09 GHz

0.2 0.5 1052

2

5

10

∞

10

5

VCC= 50 V; Zo=10Ω; Po= 240 W.

0.5

1

2

MLC724

Fig.6 Input impedance as a function of frequency.

1997 Feb 18 7

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

handbook, full pagewidth

VCC= 50 V; Zo=50Ω; Po= 240 W.

1

0.5

0.2

+ j

0

– j

0.2

0.2 0.5 1052

1.09 GHz

1.15 GHz

1.03 GHz

Z

L

0.5

1

2

2

MLC725

Fig.7 Optimum load impedance as a function of frequency.

5

10

∞

10

5

1997 Feb 18 8

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

PACKAGE OUTLINE

15.5 max

0.15 max
6

3.3

2.9

seating plane

26 max

3.7

max

3

1

1.6 max

max

2.7
min

3.3

Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.

10.15

20.3

Fig.8 SOT448A.

10.3

9.85

10.0

max

33

MSA376

2.7
min

2

1997 Feb 18 9

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 18 10

Philips Semiconductors Product specification

Microwave power transistor MF1011B900Y

NOTES

1997 Feb 18 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 750 01691