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MDU1511 – Single N-Channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
(1)
TC=25oC
ID
100.0
A
TC=70oC
94.0
TA=25oC
36.1
(3)
TA=70oC
28.8
(3)
Pulsed Drain Current
IDM
400
A
Power Dissipation
TC=25oC
PD
78.1
W
TC=70oC
50.0
TA=25oC
5.5
(3)
TA=70oC
3.5
(3)
Single Pulse Avalanche Energy
(2)
EAS
287
mJ
Junction and Storage Temperature Range
TJ, T
stg
-55~150
o
C
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
Steady State
R
θJA
22.7
o
C/W
Thermal Resistance, Junction-to-Case
Steady State
R
θJC
1.6
MDU1511
Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
Features
VDS = 30V
ID = 100A @VGS = 10V
R
DS(ON)
< 2.4 mΩ @VGS = 10V
< 3.3 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
General Description
The MDU1511 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1511 is suitable device for DC/DC Converter
and general purpose applications.
D
G
S
PowerDFN56
S S S G G S S S D D D D D D D
D
ㅊ
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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2
MDU1511 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number
Temp. Range
Package
Packing
Quantity
Rohs Status
MDU1511RH
-55~150oC
PowerDFN56
Tape & Reel
3000 units
Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BV
DSS
ID = 250μA, VGS = 0V
30 - -
V
Gate Threshold Voltage
V
GS(th)
VDS = VGS, ID = 250μA
1.3
1.8
2.7
Drain Cut-Off Current
I
DSS
VDS = 30V, VGS = 0V
- - 1
μA
TJ=55oC - -
5
Gate Leakage Current
I
GSS
VGS = ±20V, VDS = 0V
- - ±0.1
Drain-Source ON Resistance
R
DS(ON)
VGS = 10V, ID = 28A
-
2.0
2.4
mΩ
TJ=125oC
-
2.9
3.5
VGS = 4.5V, ID = 24A
-
2.7
3.3
Forward Transconductance
gfs
VDS = 5V, ID = 10A
-
45 - S
Dynamic Characteristics
Total Gate Charge
Q
g(10V)
VDS = 15V, ID = 28A,
VGS = 10V
38.8
51.8
64.8
nC
Total Gate Charge
Q
g(4.5V)
18.7
25.0
31.3
Gate-Source Charge
Qgs
-
9.9
-
Gate-Drain Charge
Qgd
-
9.4
-
Input Capacitance
C
iss
VDS = 15V, VGS = 0V,
f = 1.0MHz
2510
3347
4184
pF
Reverse Transfer Capacitance
C
rss
246
328
410
Output Capacitance
C
oss
490
653
817
Turn-On Delay Time
t
d(on)
VGS = 10V, VDS = 15V,
ID = 28A, RG = 3.0Ω
-
11.2
-
ns
Rise Time
tr
-
23.2
-
Turn-Off Delay Time
t
d(off)
-
45.6
-
Fall Time
tf
-
18.6
-
Gate Resistance
Rg
f=1 MHz
-
1.0
2.0
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 28A, VGS = 0V
-
0.8
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 28A, dl/dt = 100A/μs
-
33.8
50.7
ns
Body Diode Reverse Recovery Charge
Qrr
-
22.3
33.5
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 42.0A, VDD = 27V, VGS = 10V
3. T < 10sec.
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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MDU1511 – Single N-Channel Trench MOSFET 30V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
100
25℃
-I
S
[A]
-VSD [V]
0 1 2 3 4 5
0
4
8
12
16
20
VGS, Gate-Source Voltage [V]
TA=25℃
※ Notes :
VDS = 5V
I
D
, Drain Current [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. VGS = 10 V
2. ID = 28.0 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
※ Notes :
ID = 28.0A
TA = 25℃
R
DS(ON)
[mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
10 20 30 40 50
0
1
2
3
4
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [m
Ω]
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
5.0V
VGS = 10V
8.0V
4.0V
3.0V
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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4
MDU1511 – Single N-Channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current
Vs. Case Temperature
Fig.11 Transient Thermal Response
Curve
0 5 10 15 20 25
0
500
1000
1500
2000
2500
3000
3500
4000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
I
D
, Drain Current [A]
TA, Case Temperature [℃ ]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10210
3
10
-3
10
-2
10
-1
10
0
10
1
※ Notes :
Duty Factor, D=t1/t
2
PEAK TJ = PDM * Z
θ JC
* R
θ JC
(t) + T
C
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ JA
(t), Thermal Response
t1, Rectangular Pulse Duration [sec]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1 ms
10 s
1 s
100 ms
DC
10 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
TJ=Max Rated
TC=25℃
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45 50 55
0
2
4
6
8
10
VDS = 15V
※ Note : I
D
= 28A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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MDU1511 – Single N-Channel Trench MOSFET 30V
Dimension
MILLIMETERS
Min
Max
A
0.90
1.10
b
0.33
0.51
C
0.20
0.34
D1
4.50
5.10
D2 - 4.22
E
5.90
6.30
E1
5.50
6.10
E2 - 4.30
e
1.27BSC
H
0.41
0.71
K
0.20
-
L
0.51
0.71
α
0°
12°
Package Dimension
PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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6
MDU1511 – Single N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
Apr. 2016. Version 1.4 MagnaChip Semiconductor Ltd.
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