Datasheet MDS80-800, MDS50-1200, MDS50-800, MDS35-1200, MDS35-800 Datasheet (SGS Thomson Microelectronics)

MAIN FEATURES:

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

50-70-85 A

800 and 1200 V

50 and 100 mA

DESCRIPTION

Packaged in ISOTOPmodules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Than ks t o their internal
ceramic pad, they provide high voltage i nsulation
(2500V RMS), complying with UL standards (File
ref: E81734).

MDS35/50/80Series

DIODE / SCR MODULE

ISOTOP®

PIN CONNECTIONS

ABSOLUTE RATINGS (limiting values)

Symbol Parameter

I

T(RMS)

I

T(AV)

I

TSM

I

FSM

²

I
dI/dt
I

GM

P

G(AV)

T

stg

T

V

RGM

ISOTOP is a registred trademark of STMicroelectronics

December 2000 - Ed: 4

RMS on-state current 50 70 85 A
Averageon-state current

(Single phase-circuit, 180° conduction angle per device)
Non repetitive surge peak on-state

current (Tj initial = 25°C)

tI

j

²

t Value for fusing

Critical rate of rise of on-state current
I

=2xIGT,tr≤100 ns

G

Peak gate current tp = 20 µs Tj = 125°C 4 A
Averagegate power dissipation Tj = 125°C 1 W

Storage junction temperature range
Operating junction temperature range

Maximum peak reverse SCR gate voltage 5 V

Value

35 50 80

Tc=85°C253555 A

tp = 8.3 ms

tp = 10 ms 400 600 700
tp = 10 ms Tj = 25°C 800 1800 2450

F = 60 Hz Tj = 125°C 50 A/µs

Tj = 25°C

420 630 730

-40to+150

-40to+125

Unit

A

A

°C

2

S

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MDS35 / 5 0 / 80 Series

ELECTRICAL CHARACTERISTICS (T j = 25 °C, unless otherwise specified)
SCR

Symbol Test Conditions

I

GT

VD=12V RL=30Ω

V

GT

V

GD

I

H

I

L

dV/dt

VD=V

DRM

RL=3.3kΩ
IT= 500 mA Gate open
IG=1.2I
V

=67%V

D

GT

DRM

Gate open

Tj = 125°C MIN. 0.2 V

Tj = 125°C MIN. 1000 V/µs

ITM= 80 A tp = 380 µs

V

TM

V

t0

R

d

I

DRM

I

RRM

=110A tp=380µs

I

TM

I

=170A tp=380µs

TM

Tj = 25°C MAX.

Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj= 125°C MAX. 11 7.0 5.5 mΩ

V

DRM/VRRM

RATED

Tj = 25°C MAX. 20 µA

Tj = 125°C 10 mA

MDS

Unit

35 50 80

MIN. 5 10 mA
MAX. 50 100
MAX. 1.3 V

MAX. 80 mA
MAX. 120 mA

1.7 - -

-1.75-

V

--1.75

DIODE

Symbol Test Conditions

V

V

t0

R

I

R

IF=80A

F

= 110 A

I

F

= 170 A

I

F

Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 11 7.0 5.5 mΩ

d

VR=V

RRM

MDS

Unit

35 50 80

V

Tj = 25°C MAX.

1.7 - -

-1.7-

--1.7

Tj = 25°C MAX. 20 µA

Tj = 125°C 10 mA

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MDS35 / 50 / 80 Series

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th(j-c)

Junction to case (DC) MDS35 1.00 °C/W

MDS50 0.75
MDS80 0.45

PRODUCT SELECTOR

PartNumber

MDS35-xxx X X 50 mA
MDS50-xxx X X 50 mA
MDS80-xxx X X 150 mA

Voltage (xxx)

Sensitivity

800 V 1200 V

ORDERING INFORMATION

SCR
MODULE
SERIES

VOLTAGE:

800: 800V

1200: 1200V
CURRENT:
35: 50A
50: 70A
80: 85A

Package

ISOTOP

TM

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

MDS35-xxx MDS35-xxx 27.0 g 10 Tube
MSDS50-xxx MDS50-xxx 27.0 g 10 Tube
MDS80-xxx MDS80-xxx 27.0 g 10 Tube

Note:xxx=voltage

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MDS35 / 5 0 / 80 Series

Fig. 1-1: Maximum average power dissipation

versus average on-state current (thyristor or
diode, sinusoïdal waveform).

Fig. 1-3: Maximum total power dissipation versus
output current on resistive or indu ctive load
(Single phase bridge rectifier, two packages).

Fig. 1-2: M aximum average power dissipation
versus average on-state current (thyristor or
diode, rectangular waveform).

Fig. 1-4: Maximum total power dissipation versus
output current (Three phase bridge rectifier,three
packages).

Fig. 2-1: Average on-state current versus case
temperature (thyristor or diode, sinusoïdal
waveform).

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Fig. 2-2: Average on-state c urrent versus case
temperature (thyristor or diode, rectangular
waveform).

MDS35 / 50 / 80 Series

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

Fig. 5-1: Surge peak on-state current versus
number of cycles (MDS35 and MDS 50).

Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (t ypical values).

Fig. 5-2: Surge peak o n-state current versus
number of cycles (MDS80).

Fig. 6-1: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
(MDS35 and MDS50).

Fig. 6-2: Non repe titive surge peak on-st ate
current for a sinusoidal pulse with w i dth
tp < 10 ms, and corresponding value of I²t
(MDS80).

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MDS35 / 5 0 / 80 Series

Fig. 7-1: On-state characteristics (thyristor or

diode, maximum values) (MDS35).

Fig. 7-3: On-state characteristics (thyristor or
diode, maximum values) (MDS80).

Fig. 7-2: On-state characteristics (thyristor o r
diode, maximum values) (MDS50).

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PACKAGE MECHANICAL DATA

ISOTOP™

MDS35 / 50 / 80 Series

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323
C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004
E1 23.85 24.15 0.939 0.951
E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594
G1 12.60 12.80 0.496 0.504
G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169
F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69
P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

■ Recommended torque value: 1.3 Nm (max. 1. 5 Nm) for the 6 x M4 screws (2 x M 4 screws recom-

mended for mounting t he package on the hea tsink and the 4 provided screws.

■ The screws supplied with the package are adapted for mounting on a board (or other types of termi-

nals) with a thickness of 0.6 mm min. and 2.2 mm max.

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ofuse ofsuchinformationnorfor anyinfringementofpatentsor other rightsof third partieswhichmay result from its use. No licenseisgranted
by implication or otherwise under any patentorpatent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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