Datasheet MDS3604 Datasheet (Mosfet)

Absolute

Maximum

Ratings (

Ta

=25

o

C unless otherwise noted

)

Thermal Characteri

stics

General Description

Features

Applications

D

S

Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

The MDS3604 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.

This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.

5(D)

6(D)

7(D)

8(D)

MDS3604

 VDS = -30V
 ID = -11A @VGS = -10V
 R

< 18.3mΩ @VGS = -5V

 Load Switch
 General purpose applications
 Smart Module for Note PC Battery

DS(ON)

< 10.0mΩ @VGS = -20V
< 12.1mΩ @VGS = -10V

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

GSG

1(S)

2(S)

4(G)

3(S)

Characteristics Symbol Rating Unit

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current (Note 1) ID -11 A

Pulsed Drain Current IDM -44 A

Power Dissipation PD 2.5 W

Single Pulse Avalanche Energy (Note 2) EAS 84.5 mJ

Junction and Storage Temperature Range TJ, T

-30 V

DSS

±25 V

GSS

-55~150

stg

Characteristics Symbol Rating

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case R

(Note 1) R

50

θJA

25

θJC

o

C

Unit

o

C/W

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

1

Ordering Information

Electrical Characteristics (T

= 25

o

C unless otherwise noted)

Part Number Temp. Range Package Packing Quantity RoHS Status

MDS3604URH -55~150oC SOIC-8 Tape & Reel 3000 units Halogen Free

a

Characteristics Symbol Test Condition Min

Static Characteristics

Drain-Source Breakdown Voltage BV

Gate Threshold Voltage V

Drain Cut-Off Current I

Gate Leakage Current I

Drain-Source ON Resistance R

Forward Transconductance gFS VDS = -5V, ID = -10A 25.5 - S

Dynamic Characteristics

Total Gate Charge Qg

Gate-Source Charge Qgs - 5.2 -

Gate-Drain Charge Qgd - 7.0 -

Input Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Turn-On Delay Time t

Turn-On Rise Time tr - 12.9 -

Turn-Off Delay Time t

Turn-Off Fall Time tf - 34.6 -

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.73 -1.0 V

Body Diode Reverse Recovery Time trr

Body Diode Reverse Recovery Charge Qrr - 35.9 - nC

ID = -250µA, VGS = 0V -30 - -

DSS

VDS = VGS, ID = -250µA -1.0 -1.8 -3.0

GS(th)

VDS = -30V, VGS = 0V - -1

DSS

VGS = ±25V, VDS = 0V - - ±0.1

GSS

VGS = -20V, ID = -12A - 8.6 10

DS(ON)

iss

rss

oss

d(on)

d(off)

VGS = -10V, ID = -12A - 10 12.1

VGS = -5V, ID = -10A 14.6 18.3

VDS = -15V, ID = -12A
VGS = -10V

- 212 -

- 338 -

- 50.6 -

VDS = -15V, VGS = 0V,
f = 1.0MHz

VGS = -10V ,VDS = -15V,

RL = 1.25Ω, R

IF = -12A, di/dt = 100A/µs

GEN

= 3Ω

Typ Max Unit

- 30.5 -

- 1433 -

- 15.2 -

- 38.5 ns

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

V

µA

mΩ

nC

pF

ns

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

2

Fig.5 Transfer Characterist

ics

Fig.2 On

-

Resistance Variation with

Fig.3 On

-

Resistance Variation with

Fig.4 On

-

Resistance Variation with

Fig.6 Body Diode Forward Voltage

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

50

45

-10.0V

40

35

30

25

[A]

D

-I

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5

-8.0V

-6.0V

-5.0V

-4.0V

VGS=-3.5V

VGS=-3.0V

VGS=-2.5V

25

20

15

[mΩ ]

10

DS(ON)

R

5

0

0 10 20 30 40

-VDS [V]

Fig.1 On-Region Characteristics

Drain Current and Gate Voltage

VGS=-5V

VGS=-10V

-ID [A]

1.8

*Note; ID=-12A

1.6

1.4

1.2

VGS=-10V

, (Normalized)

1.0

DS(ON)

R

0.8

Drain-Source On-Resistance [mΩ ]

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature [ ]℃

Temperature

30

* Note ; VDS=-5V

25

30

25

20

*Note ; ID=-12A

[mΩ ]

DS(ON)

15

R

10

5

2 3 4 5 6 7 8 9 10

-VGS [V]

Gate to Source Voltage

Notes :※

VGS = 0V

20

15

[A]

D

-I

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

-VGS [V]

1

10

, Reverse Drain Current [A]

S

-I

0

10

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSD, Source-Drain voltage [V]

Variation with Source Current and
Temperature

3

Fig.10 Maximum Drain Current vs.

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

10

* Note :VDS = -15V
ID = -12A

8

6

[V]

GS

4

-V

2

0

0 10 20 30 40

Fig.7 Gate Charge Characteristics

-Qg [nC]

2.5n

2.0n

C

1.5n

iss

1.0n

Capacitance [pF]

C

500.0p

0.0
0 5 10 15 20 25 30

oss

C

rss

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

Notes ;※

1. VGS = 0 V

2. f = 1 MHz

-VDS [V]

Fig.8 Capacitance Characteristics

2

10

100 us

1 ms

1

10

10 ms

100 ms

0

10

[A]

D

-I

-1

10

-2

10

10

Operation in This Area
is Limited by R

Single Pulse
R

=50 /W℃

θ ja

Ta=25℃

-1

DS(on)

0

10

DC

100s

10s

1s

1

10

-VDS [V]

Fig.9 Maximum Safe Operating Area

1

10

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

, Normalized Thermal Response [t]

0.01

-2

θ Ja

10

Z

single pulse

10-510-410-310-210-110010110210

t1, Rectangular Pulse Duration [s]

* Notes :
Duty Factor, D=t1/t
PEAK TJ = PDM * Z
R

=50 /W℃

ΘJA

2

θ JA

16

14

12

10

8

[A]

D

-I

6

4

2

2

10

0

25 50 75 100 125 150

Ta [ ]℃

Ambient Temperature

* R

(t) + T

θ JA

A

3

Fig.11 Transient Thermal Response Curve

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

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Physical Dimensions

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

8 Leads, SOIC

Dimensions are in millimeters unless otherwise specified

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

5

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such

applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ

May. 2011 Version 1.1 MagnaChip Semiconductor Ltd.

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