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MDP1933– Single N-Channel Trench MOSFET 80V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
V
DSS
80
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
(1)
TC=25oC (Silicon Limited)
ID
105
A
TC=100oC
67
Pulsed Drain Current
IDM
420
Power Dissipation
TC=25oC
PD
157
W
TC=100oC
63
Single Pulse Avalanche Energy
(2)
EAS
144.5
mJ
Junction and Storage Temperature Range
TJ, T
stg
-55~150
o
C
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient
(1)
R
θJA
62.5
o
C/W
Thermal Resistance, Junction-to-Case
R
θJC
0.8
MDP1933
Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ
Features
VDS = 80V
ID = 105A @VGS = 10V
R
DS(ON)
< 7.0 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
General Description
The MDP1933 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1933 is suitable device for Synchronous
Rectification For Server and general purpose applications.
TO-220
D
G
S
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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MDP1933– Single N-Channel Trench MOSFET 80V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP1933TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BV
DSS
ID = 250μA, VGS = 0V
80 - - V Gate Threshold Voltage
V
GS(th)
VDS = VGS, ID = 250μA
2.0 - 4.0
Drain Cut-Off Current
I
DSS
VDS = 64V, VGS = 0V
- - 1.0
μA
Gate Leakage Current
I
GSS
VGS = ±20V, VDS = 0V
- - ±0.1
Drain-Source ON Resistance
R
DS(ON)
VGS = 10V, ID = 50A
-
5.5
7.0
mΩ
Forward Transconductance
gfs
VDS = 10V, ID = 50A
-
47 - S
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 40V, ID = 50A,
VGS = 10V
-
59.4
-
nC
Gate-Source Charge
Qgs - 16.5
-
Gate-Drain Charge
Qgd - 12.3
-
Input Capacitance
C
iss
VDS = 40V, VGS = 0V,
f = 1.0MHz
-
3,841
-
pF
Reverse Transfer Capacitance
C
rss
- 34.2
-
Output Capacitance
C
oss
-
651.7
-
Turn-On Delay Time
t
d(on)
VGS = 10V, VDS = 40V,
ID = 50A , RG = 3.0Ω
-
15.6
-
ns
Rise Time
tr - 32.7
-
Turn-Off Delay Time
t
d(off)
-
24.2
-
Fall Time
tf - 15.1
-
Gate Resistance
Rg
f=1 MHz
-
2.5 - Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 50A, VGS = 0V
-
0.9
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 50A, dl/dt = 100A/μs
-
64.3 ns
Body Diode Reverse Recovery Charge
Qrr - 152.7
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 17.0A, VGS = 10V.
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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MDP1933– Single N-Channel Trench MOSFET 80V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0 0.3 0.6 0.9 1.2 1.5
1
10
100
TA=25℃
※ Notes :
V
GS
= 0V
I
DR
, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. VGS = 10 V
2. ID = 50 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
4 5 6 7 8 9 10
0
2
4
6
8
10
12
14
16
18
20
※ Notes :
ID = 50A
TA = 25℃
R
DS(ON)
[mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0 10 20 30 40 50 60 70 80 90 100
3
4
5
6
7
8
VGS = 10V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
0 1 2 3 4 5 6 7 8
0
10
20
30
40
50
60
70
80
90
100
VGS, Gate-Source Voltage [V]
TA=25℃
※ Notes :
VDS = 10V
I
D
, Drain Current [A]
0 1 2 3 4 5
0
10
20
30
40
50
60
70
80
90
100
8.0 V
10 V
5.0 V
6.0 V
4.5 V
4.0 V
I
D
Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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MDP1933– Single N-Channel Trench MOSFET 80V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25 50 75 100 125 150
0
20
40
60
80
100
120
I
D
, Drain Current [A]
TC, Case Temperature [℃ ]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
※ Notes :
Duty Factor, D=t1/t
2
PEAK TJ = PDM * Z
θ JC
* R
θ JC
(t) + T
C
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ JA
(t), Thermal Response
t1, Rectangular Pulse Duration [sec]
0 5 10 15 20 25 30 35 40
0
1000
2000
3000
4000
5000
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 50 60
0
2
4
6
8
10
VDS = 40V
※ Note : I
D
= 50A
V
GS
, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1 ms
100 ms
10 ms
DC
100 us
Operation in This Area
is Limited by R
DS(on)
Single Pulse
TJ=Max rated
TC=25℃
I
D
, Drain Current [A]
VDS, Drain-Source Voltage [V]
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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MDP1933– Single N-Channel Trench MOSFET 80V
Package Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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MDP1933– Single N-Channel Trench MOSFET 80V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
Jun. 2014. Version 1.0 MagnaChip Semiconductor Ltd.
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