Datasheet MDFB5125, MDFB5120, MDFB5122, MDFB5124 Datasheet (DYNEX)

MDFB51

MDFB51

Fast Recovery Diode

Advance Information

Replaces March 1999 version, DS4149-4.0 DS4148-5.0 January 2000

FEATURES

● Double side cooling

● High surge capability

● Low recovery charge

APPLICATIONS

● Freewheel Diode

● D.C. Motor Drives

● Welding

● High Frequency Rectification

● Power Supplies

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

MDFB51 25
MDFB51 24
MDFB51 22
MDFB51 20

2500
2400
2200
2000

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

2500V

2212A

24000A
1000µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 3850 A

T

case

T

= 65oC 3560 A

case

Half wave resistive load, T

T

= 65oC 2555 A

case

T

= 65oC 2272 A

case

Outline type code: CB486.

= 65oC 2212 A

case

= 65oC 1627 A

case

UnitsMax.

1/8

MDFB51

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 44.0kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

dc
Anode dc
Cathode dc

Double side
Single side

Max. Units

24.0 kA

2880 x 10

3

19.2 kA

1843 x 10

3

Min.

- 0.011

- 0.023oC/W

0.03

-

- 0.06oC/W

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.021

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

Foward (conducting) - 150

–55 175

44.040.0Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

K Soft factor

V

TO

Threshold voltage

Parameter

Conditions Max.

At 1500A peak, T

, T

At V

RRM

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

= 150oC-mA

case

= 25oC - 1.6 V

case

100

6.0

-

- 1000 µC

- 400 A

1.8 - -

At Tvj = 150oC - 1.1 V

o

o

kN

µs

C
C

2/8

r

T

V

FRM

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-40V

At T

= 150oC - 0.3 mΩ

vj

MDFB51

DEFINITION OF K FACTOR AND Q

CURVES

5000

4000

- (A)

F

Measured under pulse conditions

RA1

dIR/dt

0.5x I

Q

= 0.5x IRR(t1 + t2)

RA1

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3000

2000

Instantaneous forward current, I

1000

0

0.5 1.0 1.5 2.0 2.5

Tj = 150˚C

Tj = 25˚C

Instantaneous forward voltage, VF - (V)

Figure 1 Maximim (limit) forward characteristics

3.0

3/8

MDFB51

500

400

- (A)

F

Measured under
pulse conditions

300

Tj = 150˚C

Tj = 25˚C

200

Instantaneous forward current, I

100

0

0.8 1.0 1.2 1.4 1.6
Instantaneous forward voltage, V

- (V)

F

Figure 2 Maximim (limit) forward characteristics

65

Current
waveform

55

- (V)

FP

45

V

FR

δy

δx

Voltage
waveform

di = δy
dt δx

4/8

Tj = 125˚C limit

35

Transient forward votage, V

25

Tj = 25˚C limit

15

0 500 1000 1500 2000

Rate of rise of forward current, dIF/dt - (A/µs)

Figure 3 Transient forward voltage vs rate of rise of forward current

MDFB51

100000

I

F

QS =

∫

50µs
0

Q

S

tp = 1ms

dIR/dt

10000

- (µC)

S

1000

Reverse recovered charge, Q

I

RR

E

F

A: IF = 4000A
B: I
C: I
D: I
E: I
F: I

100

1 10 100 1000

Rate of rise of reverse current, dI

/dt - (A/µs)

R

Figure 4 Recovered charge

Conditions:
T

= 150˚C,

j

= 100V

V

R

A
B
C
D

= 2000A

F

= 1000A

F

= 500A

F

= 200A

F

= 100A

F

10000

Conditions:
Tj = 150˚C,

= 100V

V

R

- (A)

1000

RR

A
B

C
D

E

F

100

Reverse recovery current, I

A: IF = 4000A

= 2000A

B: I

F

= 1000A

C: I

F

= 500A

D: I

F

E: IF = 200A

= 100A

F: I

F

10

1 10 100 1000

Rate of rise of reverse current, dI

/dt - (A/µs)

R

Figure 5 Maximum reverse recovery current vs rate of fall of forward current

5/8

MDFB51

0.1

0.01

0.001

Thermal impedance - (˚C/W)

d.c. Double side Cooled

0.0001
Time - (s)

Figure 6 Maximum (limit) transient thermal impedance - junction to case

1010.10.010.001

100

6/8

MDFB51

Package Details

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.2 x 2.1 ± 0.5 (One in each electrode)

Cathode

Ø89 ± 2
Ø63 ± 1

Ø63 ± 1

Ø102 max

Nominal weight: 1100g

Clamping force: 40kN ±10%

Package outine type code: CB486

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

25.6 ± 0.5

Anode

7/8

MDFB51

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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8/8

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© Dynex Semiconductor 2000 Publication No. DS4148-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM