Page 1
MDD 310
High Power
Diode Modules
V
RSM
V
RRM
Type
VV
900 800 MDD 310-08N1
1300 1200 MDD 310-12N1
1500 1400 MDD 310-14N1
1700 1600 MDD 310-16N1
2100 2000 MDD 310-20N1
2300 2200 MDD 310-22N1
Symbol Test Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
TVJ = T
VJM
TC = 100°C; 180° sine 305 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 11 500 A
VR = 0 t = 8.3 ms (60 Hz), sine 12 200 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 10 200 A
t = 10 ms (50 Hz), sine 9 600 A
òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 662 000 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 620 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 430 000 A2s
T
VJ
T
VJM
T
stg
V
ISOL
M
d
50/60 Hz, RMS t = 1 min 3000 V~
I
£ 1 mA t = 1 s 3600 V~
ISOL
Mounting torque (M5) 2.5-5/22-44 Nm/lb.in.
Terminal connection torque (M8) 12-15/106-132 Nm/lb.in.
t = 10 ms (50 Hz), sine 460 000 A2s
Weight Typical including screws 320 g
312
480 A
-40...+150 °C
150 °C
-40...+125 °C
I
FRMS
I
FAVM
V
= 2x 480 A
= 2x 305 A
= 800-2200 V
RRM
2
1
3
Features
●
Direct copper bonded Al2O3 -ceramic
base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered, E 72873
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
RRM
V
F
V
T0
r
T
R
thJC
R
thJK
Q
S
I
RM
d
S
d
A
a Maximum allowable acceleration 50 m/s
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
TVJ= T
IF = 600 A; TVJ = 25°C 1.2 V
For power-loss calculations only 0.75 V
TVJ = T
per diode; DC current 0.129 K/W
per module other values 0.065 K/W
per diode; DC current see Fig. 6/7 0.169 K/W
per module 0.0845 K/W
TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms 760 mC
Creepage distance on surface 12.7 mm
Strike distance through air 9.6 mm
VJM
VJM
; VR = V
RRM
40 mA
0.63 mW
275 A
© 2000 IXYS All rights reserved
20 12
2
14
Threaded spacer for higher Anode/Cathode
construction: Type ZY 250, material brass
936
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MDD 310
Fig. 1 Surge overload current
I
: Crest value, t: duration
FSM
Fig. 2 òi2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
© 2000 IXYS All rights reserved
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MDD 310
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0.15
K/W
Z
thJC
0.10
30°
DC
Fig. 6 Transient thermal impedance
junction to case (per diode)
R
for various conduction angles d:
thJC
d R
thJC
(K/W)
DC 0.129
180° 0.131
120° 0.132
60° 0.132
0.05
0
0.00
-3
10
-2
10
-1
10
0
10
1
10
10
s
t
0.20
K/W
Z
thJK
0.15
30°
DC
30° 0.133
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.0035 0.0099
2 0.0165 0.168
2
3 0.1091 0.456
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
for various conduction angles d:
R
thJK
d R
thJK
(K/W)
DC 0.169
180° 0.171
0.10
120° 0.172
60° 0.172
30° 0.173
0.05
0
0.00
-3
10
-2
10
© 2000 IXYS All rights reserved
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.0035 0.0099
-1
10
0
10
1
10
s
t
2 0.0165 0.168
2
10
3 0.1091 0.456
4 0.04 1.36
838
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