Datasheet MDC3105LT1 Datasheet (Motorola)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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  

• Optimized to Switch 3 V to 5 V Relays from a 5 V Rail

• Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to

300 mW at 3 V to 5 V

• Features Low Input Drive Current

• Internal Zener Clamp Routes Induced Current to Ground Rather Than Back

to Supply

• Guaranteed Off State with No Input Connection

• Supports Large Systems with Minimal Off–State Leakage

• ESD Resistant in Accordance with the 2000 V Human Body Model

• Provides a Robust Driver Interface Between Relay Coil and Sensitive

Logic Circuits

Applications include:

• Telecom Line Cards and Telephony

• Industrial Controls

• Security Systems

• Appliances and White Goods

• Automated Test Equipment

• Automotive Controls

This device is intended to replace an array of three to six discrete
components with an integrated SMT part. It is available in a SOT–23
package. It can be used to switch other 3 to 5 Vdc Inductive Loads such
as solenoids and small DC motors.

MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage V

CC

6.0 Vdc

Recommended Operating Supply Voltage V

CC

2.0–5.5 Vdc

Input Voltage V

in(fwd)

6.0 Vdc

Reverse Input Voltage V

in(rev)

–0.5 Vdc

Output Sink Current  Continuous I

O

300 mA

Junction Temperature T

J

150 °C

Operating Ambient Temperature Range T

A

–40 to +85 °C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

(1)

Derate above 25°C

P

D

225 mW

Thermal Resistance Junction to Ambient R

q

JA

556 °C/W

1. FR–5 PCB of 1″ x 0.75″ x 0.062″, TA = 25°C
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a new product. Specifications and information herein are subject to change without notice.

Order this document

by MDC3105LT1/D

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SEMICONDUCTOR TECHNICAL DATA



Motorola Preferred Device

RELAY/SOLENOID DRIVER

SILICON MONOLITHIC

CIRCUIT BLOCK

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

1

2

3

INTERNAL CIRCUIT DIAGRAM

V

out

(3)

V

in

(1)

1.0 k

33 k

6.8 V

GND (2)

 Motorola, Inc. 1996

MDC3105LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Output Zener Breakdown Voltage

(@ IT = 10 mA Pulse)

V

(BRout)

V

(–BRout)

6.4
—

6.8

–0.7

7.2
—

V

Output Leakage Current @ 0 Input Voltage

(V

out

= 5.5 Vdc, Vin = O.C., TA = 25°C)

(V

out

= 5.5 Vdc, Vin = O.C., TA = 85°C)

I

OO

—
—

—
—

5.0

30

µA

ON CHARACTERISTICS

Input Bias Current @ Vin = 4.0 Vdc

(IO = 250 mA, V

out

= 0.4 Vdc, TA = –40°C)

(correlated to a measurement @ 25°C)

I

in

— 2.5 —

mAdc

Output Saturation Voltage

(IO = 250 mA, Vin = 4.0 Vdc, TA = –40°C)
(correlated to a measurement @ 25°C)

— 0.2 0.4

Vdc

Output Sink Current  Continuous

(TA = –40°C, VCE = 0.4 Vdc, Vin = 4.0 Vdc )
(correlated to a measurement @ 25°C)

I

C(on)

250 — —

mA

TYPICAL APPLICATION–DEPENDENT SWITCHING PERFORMANCE

SWITCHING CHARACTERISTICS

Characteristic Symbol V

CC

Min Typ Max Units

Propagation Delay Times:

High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04)

High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04)
Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04)

High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04)
Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04)

t

PHL

t

PLH

t

PHL

t

PLH

t

PHL

t

PLH

5.5

5.5

5.5

5.5

5.5

5.5

—
—

—
—

—
—

55

430

85

315

55

2385

—
—

—
—

—
—

ns

Transition Times:

Fall Time; Figures 1, 2 (5.0 V 74HC04)
Rise Time; Figures 1, 2 (5.0 V 74HC04)

Fall Time; Figures 1, 3 (3.0 V 74HC04)
Rise Time; Figures 1, 3 (3.0 V 74HC04)

Fall Time; Figures 1, 4 (5.0 V 74LS04)
Rise Time; Figures 1, 4 (5.0 V 74LS04)

t

f

t

r

t

f

t

r

t

f

t

r

5.5

5.5

5.5

5.5

5.5

5.5

—
—

—
—

—
—

45

160

70

195

45

2400

—
—

—
—

—
—

ns

Input Slew Rate

(1)

∆V/∆t in 5.5 TBD — — V/ms

1. Minimum input slew rate must be followed to avoid overdissipating the device.

Figure 1. Switching Waveforms

V

out

GND

V

in

GND
V

Z

V

CC

V

CC

t

THL

t

TLH

t

f

t

r

t

PLH

t

PHL

90%

50%

10%

90%

50%

10%

MDC3105LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. A 3.0–V, 200–mW Dual Coil Latching Relay Application

with 5.0 V–HCMOS Interface

Figure 3. A 3.0–V, 200–mW Dual Coil Latching Relay Application

with 3.0 V–HCMOS Interface

+4.5 ≤ VCC ≤ +5.5 Vdc

+

V

out

(3)

74HC04 OR

EQUIVALENT

+

AROMAT

TX2–L2–3 V

Vin (1)

GND (2)

V

out

(3)

Vin (1)

GND (2)

74HC04 OR

EQUIVALENT

1 k

33 k

6.8 V
33 k

6.8 V

1 k

MDC3105LT1 MDC3105LT1

+4.5 ≤ VCC ≤ +5.5 Vdc

+

V

out

(3)

74HC04 OR

EQUIVALENT

+

AROMAT

TX2–L2–3 V

Vin (1)

GND (2)

V

out

(3)

Vin (1)

GND (2)

74HC04 OR

EQUIVALENT

1 k

33 k

6.8 V
33 k

6.8 V

1 k

MDC3105LT1 MDC3105LT1

+3.0 ≤ VDD ≤ +3.75 Vdc

MDC3105LT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. A 3.0–V, 200–mW Dual Coil Latching Relay Application

with TTL Interface

Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application

+4.5 TO +5.5 Vdc

+

V

out

(3)

74HC04 OR

EQUIVALENT

–

+

–

AROMAT

TX2–5 V

AROMAT

TX2–5 V

Vin (1)

GND (2)

R1 R2

Max Continuous Current Calculation

R1 = R2 = 178 Ω Nominal @ TA = 25°C
Assuming ±10% Make Tolerance,

R1 = R2 = (178 Ω) (0.9) = 160 Ω Min @ TA = 25°C
TC for Annealed Copper Wire is 0.4%/°C

N

R1 = R2 = (160 Ω) [1+(0.004) (–40°–25°)] = 118 Ω

Min @ –40°C
R1 in Parallel with R2 = 59 Ω Min @ –40°C

Io+

5.5 V Max – 0.4 V
59WMin

+

86 mA Max

86 mA ≤ 300 mA Max Io spec.

+4.5 ≤ VCC ≤ +5.5 Vdc

+

V

out

(3)

74LS04

+

AROMAT

TX2–L2–3 V

Vin (1)

GND (2)

V

out

(3)

Vin (1)

GND (2)

74LS04

1 k

33 k

6.8 V
33 k

6.8 V

1 k

MDC3105LT1 MDC3105LT1

BAL99LT1 BAL99LT1

MDC3105LT1

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL OPERATING WAVEFORMS

(Circuit of Figure 5)

Figure 6. 20 Hz Square Wave Input

10 30 50 70 90

TIME (ms)

4.5

3.5

2.5

1.5

500M

V

in

(VOLTS)

Figure 7. 20 Hz Square Wave Response

10 30 50 70 90

TIME (ms)

225

175

125

75

25

I

C

(mA)

Figure 8. 20 Hz Square Wave Response

10 30 50 70 90

TIME (ms)

9

7

5

3

1

Figure 9. 20 Hz Square Wave Response

10 30 50 70 90

TIME (ms)

172

132

92

52

12

I

Z

(mA)

V

out

(VOLTS)

Figure 10. Pulsed Current Gain

10 100 1000

Io, OUTPUT SINK CURRENT (mA)

600

500

400

300

200

Figure 11. Collector Saturation Region

1E–5

INPUT CURRENT

1

0.8

0.6

0.4

0.2

OUTPUT VOLTAGE (V)

h

FE

100

0

1

Vo = 1.0 V
Vo = 0.25 V

TJ = 125

°

C

TJ = 85°C

TJ = 25°C

TJ = –40°C

0

1E–4 1E–3 1E–2

TJ = 25°C

IC = 350 mA

250175

12550101

MDC3105LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

interface between the board and the package. With the
correct pad g eometry, the packages will self align when
subjected to a solder reflow process.

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the
pad size. This can vary from t he minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to
ambient, and t he operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and soldering

should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

PD =

PD =

T

150°C – 25°C

556°C/W

J(max)

R

θJA

– T

A

= 225 milliwatts

inches

mm

SOT–23

MDC3105LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 318–08

ISSUE AE

D

J

K

L

A

C

B

S

H

GV

3

1

2

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MDC3105LT1

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MDC3105LT1/D

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