Datasheet MCR100-6G Specification

Page 1
MCR100 Series
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 A RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Pb−Free Packages are Available*
TO−92
CASE 29
STYLE 10
http://onsemi.com
SCRs
0.8 A RMS
100 thru 600 V
G
A
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
MCR
100−x
AYWWG
G
TAPE & REEL
K
1
2
3
BENT LEAD
AMMO PACK
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 10
1 Publication Order Number:
x = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
Cathode
Gate
Anode
MCR100/D
Page 2
MCR100 Series
MAXIMUM RATINGS (T
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(T
= *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)
J
On-State RMS Current, (TC = 80°C) 180° Conduction Angles I
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) I
= 25°C unless otherwise noted)
J
Rating
MCR100−3 MCR100−4 MCR100−6 MCR100−8
Symbol Value Unit
V
V
DRM,
RRM
V
100 200 400 600
T(RMS)
TSM
0.8 A
10 A
Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s
Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)
Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) P
Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)
Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
V
Storage Temperature Range T
P
GM
G(AV)
I
GM
GRM
T
stg
J
0.1 W
0.01 W
1.0 A
5.0 V
−40 to 110 °C
−40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V
and V
DRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
RRM
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
Lead Solder Temperature
R
q
JC
R
q
JA
T
L
75
°C/W
200
260 °C
(t1/16″ from case, 10 secs max)
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
(V
= Rated V
D
DRM
and V
; RGK = 1 kW)T
RRM
T
C
C
= 25°C = 110°C
I
DRM
, I
RRM
−
−
−
−
10
100
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage
(ITM = 1.0 A Peak @ TA = 25°C)
Gate Trigger Current (Note 4) TC = 25°C
(V
= 7.0 Vdc, RL = 100 W)
AK
Holding Current (Note 3) TC = 25°C
(V
= 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW)TC = −40°C
AK
Latch Current (Note 4) TC = 25°C
(V
= 7.0 V, Ig = 200 mA) TC = −40°C
AK
Gate Trigger Voltage (Note 4) TC = 25°C
(V
= 7.0 Vdc, RL = 100 W)TC = −40°C
AK
*
V
TM
I
GT
I
H
I
L
V
GT
− − 1.7 V
− 40 200
−
−
−
−
−
−
0.5
−
0.6
−
0.62
−
5.0 10
10 15
0.8
1.2
mA
mA
mA
V
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
= Rated V
D
, Exponential Waveform, RGK = 1 kW,TJ = 110°C)
DRM
Critical Rate of Rise of On−State Current
(I
= 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)
PK
*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.
= 1000 W included in measurement.
3. R
GK
4. Does not include R
in measurement.
GK
dV/dt 20 35 −
di/dt − − 50
V/ms
A/ms
http://onsemi.com
2
Page 3
MCR100 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
100
90
m
80
70
60
50
40
30
GATE TRIGGER CURRENT ( A)
20
10
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
TJ, JUNCTION TEMPERATURE (°C)
at V
I
RRM
Reverse Blocking Region
Reverse Avalanche Region
Anode −
1.0
0.9
0.8
0.7
0.6
0.5
0.4
GATE TRIGGER VOLTAGE (VOLTS)
0.3
958065
1105035205−10−25−40
0.2
RRM
(off state)
V
TM
on state
I
H
I
at V
DRM
Forward Blocking Region
(off state)
TJ, JUNCTION TEMPERATURE (°C)
+ Voltage
DRM
9580
110655035205−10−25−40
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
http://onsemi.com
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
3
Page 4
MCR100 Series
1000
m
100
HOLDING CURRENT ( A)
120
110
100
10
90
80
9580
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Holding Current versus
Junction Temperature
DC
1000
m
100
LATCHING CURRENT ( A)
110655035205−10−25−40
10
TJ, JUNCTION TEMPERATURE (°C)
9580
110655035205−10−25−40
Figure 4. Typical Latching Current versus
Junction Temperature
10
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
1
70
60
50
, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°
C
T
I
, RMS ON-STATE CURRENT (AMPS)
T(RMS)
30° 60° 90° 120°
Figure 5. Typical RMS Current Derating
180°
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
0.140
T
I
0.50.40.30.20.10 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
2.92.6
3.53.22.32.01.71.41.10.80.5
Figure 6. Typical On−State Characteristics
http://onsemi.com
4
Page 5
MCR100 Series
ORDERING INFORMATION
Device Package Code Shipping
MCR100−003
MCR100−004
MCR100−006
MCR100−008
MCR100−3RL
MCR100−6RL
MCR100−6RLRA
MCR100−6RLRM
MCR100−6ZL1
MCR100−8RL 2000 / Tape & Reel
MCR100−3G
MCR100−4G
MCR100−6G
MCR100−8G
MCR100−3RLG
MCR100−6RLG
MCR100−6RLRAG
MCR100−4RLRMG
MCR100−6RLRMG
MCR100−6ZL1G
MCR100−8RLG 2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TO−92 (TO−226)
TO−92 (TO−226)
(Pb−Free)
5000 Units / Box
2000 / Tape & Reel
2000 / Tape & Ammo Pack
5000 Units / Box
2000 / Tape & Reel
2000 / Tape & Ammo Pack
†
http://onsemi.com
5
Page 6
MCR100 Series
TO−92 EIA RADIAL TAPE IN BOX OR ON REEL
H2A H2A
H
W2
H4
H5
L1
H1
W1
W
F1
F2
P2 P2
P1
P
L
D
H2B H2B
T1
T
T2
Figure 7. Device Positioning on Tape
Specification
Inches Millimeter
Symbol Item
D
D2
F1, F2
H
H1
H2A
H2B
H4
H5
L
L1
P
P1
P2
T
T1
T2
W
W1
W2
Tape Feedhole Diameter
Component Lead Thickness Dimension
Component Lead Pitch
Bottom of Component to Seating Plane
Feedhole Location
Deflection Left or Right
Deflection Front or Rear
Feedhole to Bottom of Component
Feedhole to Seating Plane
Defective Unit Clipped Dimension
Lead Wire Enclosure
Feedhole Pitch
Feedhole Center to Center Lead
First Lead Spacing Dimension
Adhesive Tape Thickness
Overall Taped Package Thickness
Carrier Strip Thickness
Carrier Strip Width
Adhesive Tape Width
Adhesive Tape Position
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm.
2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.
3. Component lead to tape adhesion must meet the pull test requirements.
4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.
5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.
6. No more than 1 consecutive missing component is permitted.
7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.
8. Splices will not interfere with the sprocket feed holes.
Min Max Min Max
0.1496 0.1653 3.8 4.2
0.015 0.020 0.38 0.51
0.0945 0.110 2.4 2.8
.059 .156 1.5 4.0
0.3346 0.3741 8.5 9.5
0 0.039 0 1.0
0 0.051 0 1.0
0.7086 0.768 18 19.5
0.610 0.649 15.5 16.5
0.3346 0.433 8.5 11
0.09842 — 2.5 —
0.4921 0.5079 12.5 12.9
0.2342 0.2658 5.95 6.75
0.1397 0.1556 3.55 3.95
0.06 0.08 0.15 0.20
— 0.0567 — 1.44
0.014 0.027 0.35 0.65
0.6889 0.7481 17.5 19
0.2165 0.2841 5.5 6.3
.0059 0.01968 .15 0.5
http://onsemi.com
6
Page 7
SEATING PLANE
MCR100 Series
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
H
V
1
G
C
N
D
J
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.115 --- 2.93 --- V 0.135 --- 3.43 ---
MILLIMETERSINCHES
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING PLANE
XX
G
K
D
J
V
1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80
J 0.39 0.50 K 12.70 --- N 2.04 2.66 P 1.50 4.00 R 2.93 --- V 3.43 ---
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local Sales Representative
MCR100/D
Loading...