Datasheet MCR100-6G Specification

MCR100 Series

Sensitive Gate
Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.

Features

• Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

• Blocking Voltage to 600 V

• On−State Current Rating of 0.8 A RMS at 80°C

• High Surge Current Capability − 10 A

• Minimum and Maximum Values of IGT, VGT and IH Specified

for Ease of Design

• Immunity to dV/dt − 20 V/msec Minimum at 110°C

• Glass-Passivated Surface for Reliability and Uniformity

• Pb−Free Packages are Available*

TO−92

CASE 29

STYLE 10

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SCRs

0.8 A RMS

100 thru 600 V

G

A

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

MCR

100−x

AYWWG

G

TAPE & REEL

K

1

2

3

BENT LEAD

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010

February, 2010 − Rev. 10

1 Publication Order Number:

x = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

1

2

3

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of
this data sheet.

Cathode

Gate

Anode

MCR100/D

MCR100 Series

MAXIMUM RATINGS (T

Peak Repetitive Off−State Voltage (Notes 1 and 2)

(T

= *40 to 110°C, Sine Wave, 50 to 60 Hz; RGK = 1 kW)

J

On-State RMS Current, (TC = 80°C) 180° Conduction Angles I

Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) I

= 25°C unless otherwise noted)

J

Rating

MCR100−3
MCR100−4
MCR100−6
MCR100−8

Symbol Value Unit

V

V

DRM,

RRM

V

100
200
400
600

T(RMS)

TSM

0.8 A

10 A

Circuit Fusing Consideration, (t = 8.3 ms) I2t 0.415 A2s

Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms)

Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) P

Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms)

Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms)

Operating Junction Temperature Range @ Rate V

RRM

and V

DRM

V

Storage Temperature Range T

P

GM

G(AV)

I

GM

GRM

T

stg

J

0.1 W

0.01 W

1.0 A

5.0 V

−40 to 110 °C

−40 to 150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

1. V

and V

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

RRM

source such that the voltage ratings of the devices are exceeded.

2. See ordering information for exact device number options.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,Junction−to−Case

Junction−to−Ambient

Lead Solder Temperature

R

q

JC

R

q

JA

T

L

75

°C/W

200

260 °C

(t1/16″ from case, 10 secs max)

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 3)

(V

= Rated V

D

DRM

and V

; RGK = 1 kW)T

RRM

T

C

C

= 25°C
= 110°C

I

DRM

, I

RRM

−

−

−

−

10

100

mA

ON CHARACTERISTICS

Peak Forward On−State Voltage

(ITM = 1.0 A Peak @ TA = 25°C)

Gate Trigger Current (Note 4) TC = 25°C

(V

= 7.0 Vdc, RL = 100 W)

AK

Holding Current (Note 3) TC = 25°C

(V

= 7.0 Vdc, Initiating Current = 20 mA, RGK = 1 kW)TC = −40°C

AK

Latch Current (Note 4) TC = 25°C

(V

= 7.0 V, Ig = 200 mA) TC = −40°C

AK

Gate Trigger Voltage (Note 4) TC = 25°C

(V

= 7.0 Vdc, RL = 100 W)TC = −40°C

AK

*

V

TM

I

GT

I

H

I

L

V

GT

− − 1.7 V

− 40 200

−

−

−

−

−

−

0.5

−

0.6

−

0.62

−

5.0
10

10
15

0.8

1.2

mA

mA

mA

V

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(V

= Rated V

D

, Exponential Waveform, RGK = 1 kW,TJ = 110°C)

DRM

Critical Rate of Rise of On−State Current

(I

= 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)

PK

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.

= 1000 W included in measurement.

3. R

GK

4. Does not include R

in measurement.

GK

dV/dt 20 35 −

di/dt − − 50

V/ms

A/ms

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2

MCR100 Series

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol Parameter

V

DRM

I

DRM

V

RRM

I

RRM

V

TM

I

H

100

90

m

80

70

60

50

40

30

GATE TRIGGER CURRENT ( A)

20

10

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak on State Voltage

Holding Current

TJ, JUNCTION TEMPERATURE (°C)

at V

I

RRM

Reverse Blocking Region

Reverse Avalanche Region

Anode −

1.0

0.9

0.8

0.7

0.6

0.5

0.4

GATE TRIGGER VOLTAGE (VOLTS)

0.3

958065

1105035205−10−25−40

0.2

RRM

(off state)

V

TM

on state

I

H

I

at V

DRM

Forward Blocking Region

(off state)

TJ, JUNCTION TEMPERATURE (°C)

+ Voltage

DRM

9580

110655035205−10−25−40

Figure 1. Typical Gate Trigger Current versus

Junction Temperature

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Figure 2. Typical Gate Trigger Voltage versus

Junction Temperature

3

MCR100 Series

1000

m

100

HOLDING CURRENT ( A)

120

110

100

10

90

80

9580

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current versus

Junction Temperature

DC

1000

m

100

LATCHING CURRENT ( A)

110655035205−10−25−40

10

TJ, JUNCTION TEMPERATURE (°C)

9580

110655035205−10−25−40

Figure 4. Typical Latching Current versus

Junction Temperature

10

MAXIMUM @ TJ = 25°C

MAXIMUM @ TJ = 110°C

1

70

60

50

, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°

C

T

I

, RMS ON-STATE CURRENT (AMPS)

T(RMS)

30° 60° 90° 120°

Figure 5. Typical RMS Current Derating

180°

, INSTANTANEOUS ON-STATE CURRENT (AMPS)

0.140

T

I

0.50.40.30.20.10
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

2.92.6

3.53.22.32.01.71.41.10.80.5

Figure 6. Typical On−State Characteristics

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4

MCR100 Series

ORDERING INFORMATION

Device Package Code Shipping

MCR100−003

MCR100−004

MCR100−006

MCR100−008

MCR100−3RL

MCR100−6RL

MCR100−6RLRA

MCR100−6RLRM

MCR100−6ZL1

MCR100−8RL 2000 / Tape & Reel

MCR100−3G

MCR100−4G

MCR100−6G

MCR100−8G

MCR100−3RLG

MCR100−6RLG

MCR100−6RLRAG

MCR100−4RLRMG

MCR100−6RLRMG

MCR100−6ZL1G

MCR100−8RLG 2000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

TO−92 (TO−226)

TO−92 (TO−226)

(Pb−Free)

5000 Units / Box

2000 / Tape & Reel

2000 / Tape & Ammo Pack

5000 Units / Box

2000 / Tape & Reel

2000 / Tape & Ammo Pack

†

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5

MCR100 Series

TO−92 EIA RADIAL TAPE IN BOX OR ON REEL

H2A H2A

H

W2

H4

H5

L1

H1

W1

W

F1

F2

P2 P2

P1

P

L

D

H2B H2B

T1

T

T2

Figure 7. Device Positioning on Tape

Specification

Inches Millimeter

Symbol Item

D

D2

F1, F2

H

H1

H2A

H2B

H4

H5

L

L1

P

P1

P2

T

T1

T2

W

W1

W2

Tape Feedhole Diameter

Component Lead Thickness Dimension

Component Lead Pitch

Bottom of Component to Seating Plane

Feedhole Location

Deflection Left or Right

Deflection Front or Rear

Feedhole to Bottom of Component

Feedhole to Seating Plane

Defective Unit Clipped Dimension

Lead Wire Enclosure

Feedhole Pitch

Feedhole Center to Center Lead

First Lead Spacing Dimension

Adhesive Tape Thickness

Overall Taped Package Thickness

Carrier Strip Thickness

Carrier Strip Width

Adhesive Tape Width

Adhesive Tape Position

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

Min Max Min Max

0.1496 0.1653 3.8 4.2

0.015 0.020 0.38 0.51

0.0945 0.110 2.4 2.8

.059 .156 1.5 4.0

0.3346 0.3741 8.5 9.5

0 0.039 0 1.0

0 0.051 0 1.0

0.7086 0.768 18 19.5

0.610 0.649 15.5 16.5

0.3346 0.433 8.5 11

0.09842 — 2.5 —

0.4921 0.5079 12.5 12.9

0.2342 0.2658 5.95 6.75

0.1397 0.1556 3.55 3.95

0.06 0.08 0.15 0.20

— 0.0567 — 1.44

0.014 0.027 0.35 0.65

0.6889 0.7481 17.5 19

0.2165 0.2841 5.5 6.3

.0059 0.01968 .15 0.5

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6

SEATING
PLANE

MCR100 Series

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

H

V

1

G

C

N

D

J

SECTION X−X

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
R 0.115 --- 2.93 ---
V 0.135 --- 3.43 ---

MILLIMETERSINCHES

R

A

B

BENT LEAD

TAPE & REEL

AMMO PACK

P

T

SEATING
PLANE

XX

G

K

D

J

V

1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

C

SECTION X−X

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80

J 0.39 0.50
K 12.70 ---
N 2.04 2.66
P 1.50 4.00
R 2.93 ---
V 3.43 ---

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Europe, Middle East and Africa Technical Support:

Phone: [phone]

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Phone: 81−3−5773−3850

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Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local
Sales Representative

MCR100/D