Datasheet MCP65R41, MCP65R46 Datasheet
MCP65R41/6
V
OUT
V
DD
R
2
R
F
R
3
V
REF
V
PU
RPU*
* Pull-up resistor required for the MCP65R46 only.
R
4
Thermistor
V
REF
Over Temperature Alert
6
4
SOT23-6
MCP65R41/6
1
2
3
-
+
5
OUT
V
SS
+IN
V
DD
V
REF
-IN
3 µA Comparator with Integrated Reference Voltage
Features
• Factory Set Reference Voltage
- Available Voltage: 1.21V and 2.4V
- Tolerance: ±1% (typical)
• Low Quiescent Current: 2.5 µA (typical)
• Propagation Dela y: 4 µs with 100 mV overdrive
• Input Offset Voltage: ±3mV (typical)
• Rail-to-Rail Input: V
• Output Options:
- MCP65R41 Push-Pull
- MCP65R46 Open-Drain
• Wide Supply Voltage Range: 1.8V to 5.5V
• Packages: SOT23-6
- 0.3V to VDD + 0.3V
SS
Typical Applications
• Laptop computers
• Mobile Phones
• Hand-held Metering Systems
• Hand-held Electronics
• RC Timers
• Alarm and Monitoring Circuits
• Window Co mparators
Description
The Microchip Technology Inc. MCP65R41/6 family of
push-pull and open-drain output comparators are
offered with integrated Reference Voltages of 1.21V
and 2.4V. This family provides ±1% (typical) tolerance
while consuming 2.5 µA (typical) current. These
comparators operate with a single-supply voltage as
low as 1.8V to 5.5V, which makes them ideal for low
cost and/or battery powered applications.
These comparators are optimized for low power,
single-supply applications with greater than rail-to-rail
input operation. The output li mits suppl y current surge s
and dynamic power consumption while switching. The
internal input hysteresis eliminates output switching
due to internal noise voltage, reducing current draw.
The MCP65R41 output interfaces to CMOS/TTL logic.
The open-drain output de vice MCP65 R46 can be used
as a level-shifter from 1.6V to 10V using a pull-up
resistor. It can also be used as a wired-OR logic.
This family of devices is available with 6 lead SOT-23
package.
Package Types
Design Aids
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
Typical Application
2010 Microchip Technology Inc. DS22269A-page 1
MCP65R41/6
NOTES:
DS22269A-page 2 2010 Microchip Technology Inc.
MCP65R41/6
1.0 ELECTRICAL CHARACTERISTICS
†Notice: S tress es ab ove th ose li ste d under “Maxim um
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at tho se or any oth er conditions ab ove those
1.1 Absolute Maximum Ratings†
VDD - VSS.......................................................................7.0V
All other inputs and outputs...........V
Difference Input voltage ......................................|V
Output Short Circuit Current ....................................±25 mA
Current at Input Pins ..................................................±2 mA
Current at Output and Supply Pins ..........................±50 mA
Storage temperature............... .... .. .. ....... .. .. .-65°C to +150°C
Ambient temperature with power applied....-40°C to +125°C
Junction temperature ................................................ +150°C
ESD protection on all pins (HBM/MM)4 kV/200V
ESD protection on MCP65R46 OUT pin (HBM/MM).............
4 kV/175V
– 0.3V to VDD + 0.3V
SS
DD
- VSS|
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
DC CHARACTERISTICS
Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, V
/2, V
V
DD
and T
IN-
= -40°C to 125°C.
A
= VSS, RL= 100 k to VDD/2 (MCP65R41 only), and R
= 2.74 k to VDD (MCP65R46 only),
Pull-Up
Parameters Sym Min Typ Max Units Conditions
Power Supply
Supply Voltage V
Quiescent Current per Comparator I
DD
Q
1.8 — 5.5 V
—2.5 4 µAI
OUT
= 0
Input
Input Voltage Range V
Common-Mode Rejection Ratio
= 5V
V
DD
CMRR 55 70 — dB V
CMR
VSS0.3 — VDD+0.3 V
= -0.3V to 5.3V
CM
50 65 — dB VCM = 2.5V to 5. 3V
55 70 — dB MCP65R41,
V
= -0.3V to 2.5V
CM
50 70 — dB MCP65R46,
= -0.3V to 2.5V
V
CM
Power Supply Rejection Ratio PSRR 63 80 — dB V
Input Offset Voltage V
Drift with Temperature V
Input Hysteresis Voltage V
Drift with Temperature V
Drift with Temperature V
HYST
HYST
Input Bias Current I
TA = +85°C I
TA = +125°C I
Input Offset Current I
OS
/T — ±10 — µV/°C VCM = V
OS
HYST
/T — 6 — µV/°C VCM = V
/T
B
B
B
OS
-10 ±3 +10 mV VCM = V
13.3 5 mVVCM = V
2
— 5 —µV/°C2VCM = V
—1 —pAV
—50 — pAVCM = V
— — 5000 pA VCM = V
— ±1 — pAVCM= V
= V
CM
SS
SS
SS
SS
SS
SS
CM = VSS
SS
SS
SS
(Note 1)
(Note 1)
Note 1: The input offset vo lt a ge is the c ente r (ave rage) of the input-referred trip points. Th e inp ut hy ste res is is the
difference between the input-referred trip points.
2: Limit the output current to Absolute Maximum Rating of 30 mA.
3: Do not short the output of the MCP65R46 comparators above V
+ 10V.
SS
4: The low power reference voltage pin is designed to drive small capacitive loads. See Section 4.5.2.
IN+
=
2010 Microchip Technology Inc. DS22269A-page 3
MCP65R41/6
DC CHARACTERISTICS (CONTINUED)
Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, V
V
/2, V
DD
IN-
= -40°C to 125°C.
and T
A
= VSS, RL= 100 k to VDD/2 (MCP65R41 only), and R
= 2.74 k to VDD (MCP65R46 only),
Pull-Up
Parameters Sym Min Typ Max Units Conditions
Common Mode/
ZCM/Z
DIFF
—1013||4 — ||pF
Differential Input Impedance
Push Pull Output
High Level Output Voltage V
Low Level Output Voltage V
Short Circuit Current I
OH
OL
SC
I
SC
VDD0.2 — — V I
——VSS+0.2 V I
= -2 mA, VDD = 5V
OUT
= 2 mA, VDD = 5V
OUT
—±50 — mA(Note 2) MCP65R41
—±1.5 — mA(Note 2) MCP65R46
Open Drain Output (MCP65R46)
Low Level Output Voltage V
Short Circuit Current I
High-Level Output Current I
Pull-up Voltage V
Output Pin Capacitance C
OL
SC
OH
PU
OUT
——VSS+0.2 V I
—±50 — mA
-100 — — nA VPU= 10V
1.6 — 10 V Note 3
—8 —pF
OUT
= 2 mA
Reference Voltage Output
Initial Reference Tolerance V
TOL
V
REF
-2 ±1 +2 % I
1.185 1.21 1.234 V I
= 0A,
REF
= 1.21V and 2.4V
V
REF
= 0A
REF
2.352 2.4 2.448 V
Reference Output Current I
Drift with Temperature (character-
V
REF
ized but not production tested)
Capacitive Load C
REF
/T — 27 100 ppm V
L
— ±500 — µA V
—22100ppmV
—23100ppmV
= ±2% (maximum)
TOL
= 1.21V, VDD = 1.8V
REF
= 1.21V, VDD = 5.5V
REF
= 2.4V, VDD = 5.5V
REF
—200 — pFNote 4
Note 1: The input offset vo lt a ge is the c ente r (ave rage) of the input-referred trip points. Th e inp ut hy ste res is is the
difference between the input-referred trip points.
2: Limit the output current to Absolute Maximum Rating of 30 mA.
3: Do not short the output of the MCP65R46 comparators above V
+ 10V.
SS
4: The low power reference voltage pin is designed to drive small capacitive loads. See Section 4.5.2.
IN+
=
DS22269A-page 4 2010 Microchip Technology Inc.
MCP65R41/6
V
OUT
V
DD
MCP65R41
VIN=V
SS
200k
200k
200k
200k
50p
V
SS
= 0V
V
OUT
V
DD
MCP65R46
VIN=V
SS
200k
200k
2.74k
100k
50p
V
SS
= 0V
AC CHARACTERISTICS
Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C,
= VDD/2, Step = 200 mV, Overdrive = 100 mV, RL= 100 k to VDD/2 (MCP65R41 only),
V
IN+
R
= 2.74 k to VDD (MCP65R46 only), and CL = 50 pF.
Pull-Up
Parameters Sym Min Typ Max Units Conditions
Rise Time t
Fall Time t
Propagation Delay (High to Low) t
Propagation Delay (Low to High) t
Propagation Delay Skew t
Maximum Toggle Frequency f
Input Noise Voltage E
PHL
PLH
PDS
MAX
f
MAX
R
F
N
Note 1: Propagation Delay Skew is defined as: t
TEMPERATURE SPECIFICATIONS
Unless otherwise indicated, all limits are specified for: VDD = +1.8V to +5.5V and VSS = GND.
Parameters
Temperature Ranges
Specified Temperature Range T
Operating Temperature Range T
Storage Temperature Range T
Thermal Package Resistances
Thermal Resistance, SOT23-6
—0.85— µs
—0.85— µs
—48.0µs
—48.0µs
—±0.2— µsNote 1
—160—kHzVDD = 1.8V
—120—kHzVDD = 5.5V
—200—µV
= t
- t
PHL
.
Symbo
l
A
A
A
JA
PDS
PLH
Min Typ Max Units Conditions
-40 — +125 °C
-40 — +125 °C
-65 — +150 °C
— 190.5 — °C/W
P-P
10 Hz to 100 kHz
1.2 Test Circuit Configuration
FIGURE 1-2: Test Circuit for the Open
FIGURE 1-1: Test Circuit for the Push-pull
Output Comparators.
2010 Microchip Technology Inc. DS22269A-page 5
Drain Comparators.
MCP65R41/6
NOTES:
DS22269A-page 6 2010 Microchip Technology Inc.
MCP65R41/6
0%
10%
20%
30%
40%
50%
-10-8-6-4-20 2 4 6 810
V
OS
(mV)
Occurrences (%)
VDD = 1.8V
V
CM
= V
SS
Avg. = 1.09 mV
StDev = 1.59 mV
850 units
VDD = 5.5V
V
CM
= V
SS
Avg. = 0.61 mV
StDev = 1.48 mV
850 units
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
-50 -25 0 25 50 75 100 125
Temperature(°C)
VDD= 1.8V
VDD= 5.5V
V
CM
= V
SS
V
OS
(mV)
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
-0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
V
CM
(V)
V
OS
(mV)
V
DD
= 1.8V
TA= +25°C
TA= +125°C
TA= +85°C
TA= -40°C
0%
10%
20%
30%
40%
50%
60%
-60 -48 -36 -24 -12 0 12 24 36 48 60
V
OS
Drift (µV/°C)
Occurrences (%)
VCM = V
SS
Avg. = 9.86 µV/°C
StDev = 4.97 µV/°C
850 Units
T
A
= -40°C to +125°C
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
1.5 2.5 3.5 4.5 5.5
V
DD
(V)
V
OS
(mV)
TA= -40°C to +125°C
-10.0
-7.5
-5.0
-2.5
0.0
2.5
5.0
7.5
10.0
-1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V
CM
(V)
V
OS
(mV)
TA = -40°C to +125°C
V
DD
= 5.5V
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provid ed follo wing this note are a st atis tical summary b ased on a limit ed nu mber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, V
R
= 100 k to VDD/2 (MCP65R41 only), R
L
FIGURE 2-1: Input Offset Voltage.
= 2.74 k to VDD/2 (MCP65R46 only) and CL = 50 pF.
Pull-Up
FIGURE 2-4: Input Offset Voltage Drift.
– = GND,
IN
FIGURE 2-2: Input Offset Voltage vs. Temperature.
FIGURE 2-3: Input Offset Voltage vs. Common-Mode Input Voltage.
2010 Microchip Technology Inc. DS22269A-page 7
FIGURE 2-5: Input Offset Voltage vs. Supply Voltage vs. Temperature.
FIGURE 2-6: Input Offset Voltage vs. Common-Mode Input Voltage.
MCP65R41/6
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 2.4 mV
StDev = 0.17 mV
850 units
V
DD
= 5.5V
Avg. = 2.3 mV
StDev = 0.17 mV
850 units
TA = -40°C
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 3 .0 mV
StDev = 0.17 mV
850 units
V
DD
= 5.5V
Avg. = 2.8 mV
StDev = 0.1 7 mV
850 units
TA = +25°C
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 3.4 mV
StDev = 0.14 mV
850 units
V
DD
= 5.5V
Avg. = 3.2 mV
StDev = 0.13 mV
850 units
TA = +125°C
0%
10%
20%
30%
40%
50%
60%
70%
80%
0 2 4 6 8 10 12 14 16 18 20
V
HYST
Drift, TC1 (µV/°C)
Occurrences (%)
850 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
VDD = 5.5V
Avg. = 5.7 µV/°C
StDev = 0.50 µV/°C
VDD = 1.8V
Avg. = 6.1 µV/°C
StDev = 0.55 µV/°C
0%
10%
20%
30%
-0.50 -0.25 0.00 0.25 0.50 0.75 1.00
V
HYST
Drift, TC2 (µV/°C2)
Occurrences (%)
VDD = 5.5V
V
CM
= V
SS
Avg. = 10.4 µV/°C
StDev = 0.6 µV/ ° C
VDD = 5.5V
Avg. = 0.25 µV/°C
2
StDev = 0.1 µV/°C
2
VDD = 1.8V
Avg. = 0.3 µ V /° C
2
StDev = 0.2 µV/°C
2
1380 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
1.0
2.0
3.0
4.0
5.0
-50 -25 0 25 50 75 100 125
Temperature
(°C)
V
HYST
(mV)
VDD= 5.5V
V
DD
= 1.8V
V
CM
= V
SS
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, V
= 100 k to VDD/2 (MCP65R41 only), R
R
L
FIGURE 2-7: Input Hysteresis Voltage at -40°C.
= 2.74 k to VDD/2 (MCP65R46 only) and CL = 50 pF.
Pull-Up
FIGURE 2-10: Input Hysteresis Voltage Drift - Linear Temperature Compensation (TC1).
– = GND,
IN
FIGURE 2-8: Input Hysteresis Voltage at +25°C.
FIGURE 2-9: Input Hysteresis Voltage at +125°C.
DS22269A-page 8 2010 Microchip Technology Inc.
FIGURE 2-11: Input Hysteresis Voltage Drift - Quadratic Temperature Compensation (TC2).
FIGURE 2-12: Input Hysteresis Voltage vs. Temperature.
MCP65R41/6
1.0
2.0
3.0
4.0
5.0
-0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
V
CM
(V)
V
HYST
(mV)
V
DD
= 1.8V
TA = +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
1.0
2.0
3.0
4.0
5.0
-0.5 0.5 1.5 2.5 3.5 4.5 5.5
V
CM
(V)
V
HYST
(mV)
V
DD
= 5.5V
TA = -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
1.0
2.0
3.0
4.0
5.0
1.5 2.5 3.5 4.5 5.5
V
DD
(V)
V
HYST
(mV)
TA = -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
0.01.02.03.04.05.0
I
Q
(µV/V)
Occurrences (%)
VDD = 1.8V
850 units
Temp +125°C
Avg. = 3.51 µA
StDev= 0.07 µA
Temp +85°C
Avg. = 3 µA
StDev= 0.07 µA
Temp +25°C
Avg. = 2.52 µA
StDev= 0.08 µA
Temp -40°C
Avg. = 1.93 µA
StDev= 0.0 8 µA
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
-0.5 0.0 0.5 1.0 1.5 2.0 2.5
V
CM
(V)
I
Q
(µA)
DD
= 1.8 V
Sweep VIN- ,V
IN+
=
Sweep V
IN+ ,VIN
- = VDD/2
Sweep VIN- ,V
IN+
= VDD/2
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
-1.00.01.02.03.04.05.06.0
V
CM
(V)
I
Q
(µA)
DD
= 5.5V
Sweep VIN- ,V
IN+
= VDD/2
Sweep V
IN+
,V
IN-
= VDD/2
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, V
= 100 k to VDD/2 (MCP65R41 only), R
R
L
FIGURE 2-13: Input Hysteresis Voltage vs.
= 2.74 k to VDD/2 (MCP65R46 only) and CL = 50 pF.
Pull-Up
FIGURE 2-16: Quiescent Current.
Common-Mode Input Voltage.
V
– = GND,
IN
FIGURE 2-14: Input Hysteresis Voltage vs. Common-Mode Input Voltage.
FIGURE 2-15: Input Hysteresis Voltage vs. Supply Voltage vs. Temperature.
2010 Microchip Technology Inc. DS22269A-page 9
FIGURE 2-17: Quiescent Current vs. Common-Mode Input Voltage.
V
FIGURE 2-18: Quiescent Current vs. Common-Mode Input Voltage.
MCP65R41/6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
Q
(µA)
TA = -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
0
2
4
6
8
10
12
14
16
18
10 100 1000 10000 100000
Toggle Frequency (Hz)
I
Q
(µA)
V
DD
= 5.5V
V
DD
= 1.8V
1k
10k
100k
100 mV Over-Drive
V
CM
= VDD/2
R
L
= Open
-120
-80
-40
0
40
80
120
0.0 1.0 2.0 3.0 4.0 5.0 6.0
V
DD
(V)
I
SC
(mA)
TA = -40°C
T
T
A
T
A
TA = -40°C
TA = +85°C
TA = +25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0
V
CM
(V)
I
Q
(mA)
V
DD
= 5.5V
Sweep V
IN+ ,VIN
- = VDD/2
Sweep VIN- ,V
IN+
= VDD/2
MCP65R46
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
012345678910
V
PU
(V)
I
Q
(µA)
VDD = 2.5V
V
DD
= 1.8V
V
DD
= 5.5V
V
DD
= 4.5V
V
DD
= 3.5V
MCP65R46
-1.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
Time (3 µs/div)
V
OUT
(V)
VIN-
V
OUT
V
DD
= 5.5V
VIN+ = VDD/2
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, V
= 100 k to VDD/2 (MCP65R41 only), R
R
L
FIGURE 2-19: Quiescent Current vs. Supply Voltage vs. T emperature.
0 dB Output Attenuation
= 2.74 k to VDD/2 (MCP65R46 only) and CL = 50 pF.
Pull-Up
FIGURE 2-22: Quiescent Current vs. Common-Mode Input Voltage.
– = GND,
IN
10 100
FIGURE 2-20: Quiescent Current vs. Toggle Frequency.
FIGURE 2-21: Short Circuit Current vs. Supply Voltage vs. T emperature.
DS22269A-page 10 2010 Microchip Technology Inc.
= +25°C
= +85°C
A
FIGURE 2-23: Quiescent Current vs. Pull Up Voltage.
= +125°C
FIGURE 2-24: No Phase Reversal.
MCP65R41/6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 2.0 4.0 6.0 8.0 10.0
I
OUT
(mA)
V
OL
, V
DD
- V
OH
(V)
V
DD
= 1.8V
VDD - V
OH
TA = +125°C
T
A
= -40°C
V
OL
TA = +125°C
T
A
= -40°C
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
012345678910
Prop. Delay (µs )
Occurrences ( %)
V
DD
= 1.8V
100 mV Over-Drive
V
CM
= VDD/2
t
PLH
Avg. = 3.92 µs
StDev= 0.45 µs
850 units
t
PHL
Avg. = 3.53 µs
StDev= 0.27 µs
850 units
MCP65 R41
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
012345678910
Prop. Delay (µs)
Occurrences ( %)
V
DD
= 5.5V
100 mV Over-Drive
V
CM
= VDD/2
t
PHL
Avg. = 4.76 µs
StDev = 0.38 µs
850 units
t
PLH
Avg. = 4.97 µs
850 units
MCP65R41
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20 25
I
OUT
(mA)
V
OL
, V
DD
- V
OH
(V)
V
DD
V
OL
T
A
TA = -40°C
V
DD
- V
OH
TA = +125°C
T
A
= -40°C
0%
10%
20%
30%
40%
50%
60%
70%
80%
012345678910
Prop. Delay (µs)
Occurrences ( %)
VDD= 1.8V
100 mV Over-Drive
V
CM
= VDD/2
t
PLH
Avg. = 2.5 µs
StDev= 0.15 µs
850 units
t
PHL
Avg. = 3.6 µs
StDev= 0.19 µs
850 units
MCP65R46
0%
10%
20%
30%
40%
50%
60%
70%
80%
012345678910
Prop. Delay (µs)
Occurrences ( %)
V
DD
= 5.5V
100 mV Over-Drive
V
CM
= VDD/2
t
PLH
Avg. = 3.1 µs
850 units
t
PHL
Avg. = 4.9 µs
StDev = 0.26 µs
850 units
MCP65 R4 6
Note: Unless otherwise indicated, VDD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, V
= 100 k to VDD/2 (MCP65R41 only), R
R
L
FIGURE 2-25: Output Headroom vs. Output Current.
= 2.74 k to VDD/2 (MCP65R46 only) and CL = 50 pF.
Pull-Up
= 5.5V
= +125° C
FIGURE 2-28: Output Headroom vs. Output Current.
– = GND,
IN
FIGURE 2-26: Low-to-High and High-to-Low Propagation Delays.
FIGURE 2-27: Low-to-High and High-to-Low Propagation Delays.
2010 Microchip Technology Inc. DS22269A-page 11
FIGURE 2-29: Low-to-High and High-to-Low Propagation Delays.
StDev = 0.16 µs
StDev = 0.4 1 µs
FIGURE 2-30: Low-to-High and High-to-Low Propagation Delays .
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