MCP1403/4/5
8-Pin DFN
(2)
NC
IN A
GND
IN B
2
3
4
5
6
7
8
1
8-Pin
1
2
3
4
NC
5
6
7
8
OUT A
OUT B
NC
IN A
GND
IN B
V
DD
Note 1: Duplicate pins must both be connected for
proper operation.
2: Exposed pad of the DFN package is electrically
isolated.
MCP1403
MCP1404
NC
OUT A
OUT B
V
DD
MCP1405
NC
OUT A
OUT B
V
DD
1
2
3
4
5
6
7
8
16
13
12
11
10
9
NC
IN A
NC
GND
GND
NC
IN B
NC
NC
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
15
14
16-Pin SOIC
NC
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
OUT A
V
DD
V
DD
OUT B
OUT B
NC
OUT A
MCP1403
MCP1404
MCP1405
NC
NC
OUT A
OUT B
V
DD
MCP1403
MCP1404
NC
OUT A
OUT B
V
DD
MCP1405
NC
OUT A
OUT B
V
DD
PDIP/SOIC
4.5A Dual High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 4.5A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns
- 5600 pF in 34 ns
• Short Delay Times: 40 ns (typ.)
• Low Supply Current:
- With Logic ‘1 ’ Input – 1.0 mA (typ.)
- With Logic ‘0 ’ Input – 150 µA (typ.)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing
Up To 5V
• Packages: 8-Pin SOIC, PDIP, 8-Pin 6x5 DFN,
and 16-Pin SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP1403/4/5 are a family of dual-inverting, dualnon-inverting, or complimentary output drivers. They
can delivery high peak currents of 4.5A typically into
capacitive loads. These devices also feature low shootthrough current, matched rise/fall times and
propagation delays.
The MCP1403/4/5 drivers operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 2200 pF gate capacitance in under 15 ns
(typ). They provide low enough impedances in both the
on and off states to ensure the MOSFETs intended
state will not be affected, even by large transients. The
input to the MCP1403/4/5 may be driven directly from
either TTL or CMOS (3V to 18V).
The MCP1403/4/5 dual-output 4.5A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40
The low thermal resistance of the thermally enhanced
DFN package allows for greater power dissipation
capability for driving heavier capacitive or resistive
loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
o
C to +125oC temperature rating.
Package Types
© 2007 Microchip Technology Inc. DS22022B-page 1
MCP1403/4/5
Effective
Input C = 20 pF
MCP1403 Dual Inverting
MCP1404 Dual Non-inverting
Input
GND
V
DD
300 mV
4.7V
Inverting
Non-inverting
Note 1: Unused inputs should be grounded.
730 µA
Output
(Each Input)
MCP1405 Inverting / Non-inverting
Functional Block Diagram
(1)
DS22022B-page 2 © 2007 Microchip Technology Inc.
MCP1403/4/5
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage................................................................+20V
Input Voltage...............................(V
Input Current (V
)................................................50 mA
IN>VDD
+ 0.3V) to (GND – 5V)
DD
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1 ’, High Input Voltage V
Logic ‘0 ’, Low Input Voltage V
Input Current I
Input Voltage V
IH
IL
IN
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistance, High R
Output Resistance, Low R
Peak Output Current I
Latch-Up Protection With-
I
REV
OH
OL
OH
OL
PK
stand Reverse Current
Switching Time (Note 1)
Rise Time t
Fall Time t
Delay Time t
Delay Time t
R
F
D1
D2
Power Supply
Supply Voltage V
Power Supply Current I
DD
I
S
S
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
2.4 1.5 — V
—1 . 30 . 8V
–1 — 1 µA 0V ≤ VIN ≤ V
-5 — VDD+0.3 V
VDD – 0.025 — — V DC Test
— — 0.025 V DC Test
—2 . 23 . 0Ω I
—2 . 83 . 5Ω I
—4 . 5—A V
OUT
OUT
DD
— >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec.
—1 52 8n sFigure 4-1, Figure 4-2
CL = 2200 pF
—1 82 8n sFigure 4-1, Figure 4-2
= 2200 pF
C
L
—4 04 8n sFigure 4-1, Figure 4-2
—4 04 8n sFigure 4-1, Figure 4-2
4.5 — 18.0 V
—1 . 02 . 0m A V
= 3V (Both Inputs)
IN
— 0.15 0.25 mA VIN = 0V (Both Inputs)
DD
= 10 mA, VDD = 18V
= 10 mA, VDD = 18V
= 18V (Note 2)
© 2007 Microchip Technology Inc. DS22022B-page 3
MCP1403/4/5
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V DD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1 ’, High Input Voltage V
Logic ‘0 ’, Low Input Voltage V
Input Current I
IH
IL
IN
Output
High Output Voltage V
Low Output Voltage V
Output Resistance, High R
Output Resistance, Low R
OHVDD
OL
OH
OL
Switching Time (Note 1)
Rise Time t
Fall Time t
Delay Time t
Delay Time t
R
F
D1
D2
Power Supply
Power Supply Current I
S
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
2.4 — — V
——0 . 8V
–10 — +10 µA 0V ≤ VIN ≤ V
DD
– 0.025 — — V DC TEST
— — 0.025 V DC TEST
—3 . 16 . 0Ω I
—3 . 77Ω I
= 10 mA, VDD = 18V
OUT
= 10 mA, VDD = 18V
OUT
—2 54 0n sFigure 4-1, Figure 4-2
CL = 2200 pF
—2 54 0n sFigure 4-1, Figure 4-2
CL = 2200 pF
—5 06 5n sFigure 4-1, Figure 4-2
—5 06 5n sFigure 4-1, Figure 4-2
—
—
2.0
0.2
3.0
0.3
mA VIN = 3V (Both Inputs)
= 0V (Both Inputs)
V
IN
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
Maximum Junction Temperature T
Storage Temperature Range T
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN θ
Thermal Resistance, 8L-PDIP θ
Thermal Resistance, 8L-SOIC θ
Thermal Resistance, 16L-SOIC θ
A
J
A
JA
JA
JA
JA
–40 — +125 °C
— — +150 °C
–65 — +150 °C
— 33.2 — °C/W Typical four-layer board with
—1 2 5 —° C / W
—1 5 5 —° C / W
— 155 — °C/W 4-Layer JC51-7 Standard
≤ 18V.
DD
vias to ground plane
Board, Natural Convection
DS22022B-page 4 © 2007 Microchip Technology Inc.
MCP1403/4/5
10
20
30
40
50
60
70
80
90
100
4 6 8 10 12 14 16 18
Supply Voltage (V)
Rise Time (ns)
6800 pF
4700 pF
2200 pF
1800 pF
10
20
30
40
50
60
70
80
1000 10000
Capacitive Load (pF)
Rise Time (ns)
5V
18V
12V
12
14
16
18
20
22
24
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (
o
C)
Time (ns)
t
FALL
t
RISE
C
LOAD
= 1800 pF
10
20
30
40
50
60
70
80
90
100
4 6 8 10 12 14 16 18
Supply Voltage (V)
Fall Time (ns)
6800 pF
4700 pF
2200 pF
1800 pF
10
20
30
40
50
60
70
80
90
100
1000 10000
Capacitive Load (pF)
Fall Time (ns)
5V
18V
12V
35
60
85
110
135
160
234567891 0
Input Amplitude (V)
Propagation Delay (ns)
t
D1
t
D2
VDD = 12V
C
LOAD
= 1800 pF
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ V DD ≤ 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-3: Rise and Fall Times vs.
Temperature.
© 2007 Microchip Technology Inc. DS22022B-page 5
FIGURE 2-6: Propagation Delay vs. Input
Amplitude.
MCP1403/4/5
30
40
50
60
70
80
90
100
4 6 8 10 12 14 16 18
Supply Voltage (V)
Propagation Delay (ns)
t
D1
t
D2
C
LOAD
= 1800 pF
30
35
40
45
50
55
60
65
70
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (
o
C)
Propagation Delay (ns)
t
D1
t
D2
C
LOAD
= 1800 pF
0
0.1
0.2
0.3
0.4
0.5
4 6 8 1 01 21 41 61 8
Supply Voltage (V)
Quiescent Current (mA)
Both Inputs = 1
Both Inputs = 0
0
0.1
0.2
0.3
0.4
0.5
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (
o
C)
Quiescent Current (mA)
Both Inputs = 1
Both Inputs = 0
1
2
3
4
5
6
7
4 6 8 10 12 14 16 18
Supply Voltage (V)
R
OUT-HI
(
::
)
TJ = +150oC
TJ = +25oC
VIN = 5V (MCP1404)
V
IN
= 0V (MCP1403)
2
3
4
5
6
7
8
4 6 8 10 12 14 16 18
Supply Voltage (V)
R
OUT-LO
(
::
)
TJ = +150oC
TJ = +25oC
VIN = 0V (MCP1404)
V
IN
= 5V (MCP1403)
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
FIGURE 2-7: Propagation Delay Time vs.
Supply Voltage.
FIGURE 2-8: Propagation Delay Time vs.
Temperature.
FIGURE 2-10: Quiescent Current vs.
Temperature.
FIGURE 2-11: Output Resistance (Output
High) vs. Supply Voltage.
FIGURE 2-9: Quiescent Current vs.
Supply Voltage.
DS22022B-page 6 © 2007 Microchip Technology Inc.
FIGURE 2-12: Output Resistance (Output
Low) vs. Temperature.
Typical Performance Curves (Continued)
0
10
20
30
40
50
60
70
80
90
100
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
650 kHz
VDD = 18V
50 kHz
100 kHz
200 kHz
400 kHz
0
20
40
60
80
100
120
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
2 MHz
VDD = 12V
500 kHz
200 kHz
100 kHz
1 MHz
0
20
40
60
80
100
120
100 1000 10000
Capacitive Load (pF)
Supply Current (mA)
3.5 MHz
VDD = 6V
1 MHz
500 kHz
200 kHz
2 MHz
0
10
20
30
40
50
60
70
80
10 100 1000
Frequency (kHz)
Supply Current (mA)
VDD = 18V
6,800 pF
100 pF
2,200 pF
4,700 pF
0
20
40
60
80
100
120
140
10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
VDD = 12V
6,800 pF
100 pF
2,200 pF
4,700 pF
0
20
40
60
80
100
120
140
10 100 1000 10000
Frequency (kHz)
Supply Current (mA)
VDD = 6V
6,800 pF
100 pF
2,200 pF
4,700 pF
Note: Unless otherwise indicated, T A = +25°C with 4.5V ≤ V DD ≤ 18V.
MCP1403/4/5
FIGURE 2-13: Supply Current vs.
Capacitive Load.
FIGURE 2-14: Supply Current vs.
Capacitive Load.
FIGURE 2-16: Supply Current vs.
Frequency.
FIGURE 2-17: Supply Current vs.
Frequency.
FIGURE 2-15: Supply Current vs.
Capacitive Load.
© 2007 Microchip Technology Inc. DS22022B-page 7
FIGURE 2-18: Supply Current vs.
Frequency.