The MCM72F6 (512KB) is configured as 64K x 72 bits and the MCM72F7
(1MB) is configured as 128K x 72 bits. Both are packaged in a 168–pin dual–
in–line memory module DIMM. Each module uses Motorola’s 3.3 V 64K x 18 bit
flow–through BurstRAMs.
Address (A), data inputs (DQ, DP), and all control signals except output enable
) are clock (K) controlled through positive–edge–triggered noninverting reg-
(G
isters.
Write cycles are internally self–timed and initiated by the rising edge of the
clock (K) input. This feature provides increased timing flexibility for incoming
signals. Synchronous byte write (W
both bytes.
• Single 3.3 V + 10%, – 5% Power Supply
• Plug and Pin Compatibility with 2MB and 4MB
• Multiple Clock Pins for Reduced Loading
• All Inputs and Outputs are L VTTL Compatible
• Byte Write Capability
• Fast SRAM Access Times: 9/10/12 ns
• Decoupling Capacitors for Each Fast Static RAM
• High Quality Multi–Layer FR4 PWB With Separate Power and Ground
58, 59, 61, 142, 143NCNo Connection: There is no connection to the chip.
A0 – A15InputSynchronous Address Inputs: These inputs are registered and must meet
DP0 – DP7Synchronous Parity Data Inputs/Outputs.
DQ0 – DQ63I/OSynchronous Data Inputs/Outputs.
W0 – W7InputSynchronous Byte Write Inputs: x refers to the byte being written (byte a,
V
DD
V
SS
TypeDescription
setup and hold times.
deselect cycle.
blocks ADSP
1MB module.
Low — enables output buffer.
High — DQx pins are high impedance.
G1
is only used on 1MB module.
except G
b). SGW
SupplyPower Supply: 3.3 V + 10%, – 5%. Must be connected on all modules.
SupplyGround.
or deselects chip when ADSC is asserted. E1 is only used on
and LBO.
overrides SBx.
DATA RAM MCM69F618A SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, 3 and 4)
Next CycleAddress UsedEADSPGDQxWRITE
DeselectNone10XHigh–ZX
Begin ReadExternal Address000DQRead
ReadCurrentX11High–ZRead
ReadCurrentX10DQRead
Begin WriteExternal00XHigh–ZWrite
WriteCurrentX1XHigh–ZWrite
NOTES:
1. X = don’t care, 1 = logic high, 0 = logic low.
2. Write is defined as any Wx
3. G
is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (t
4. On write cycles that follow read cycles, G
also remain negated at the completion of the write cycle to ensure proper write data hold times.
low.
must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
MOTOROLA FAST SRAM
) following G going low.
GLQX
MCM72F6•MCM72F7
5
Page 6
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to V
RatingSymbolValueUnit
Power Supply VoltageV
Voltage Relative to V
Output Current (per I/O)I
Power DissipationMCM72F6
Ambient TemperatureT
Die TemperatureT
Temperature Under BiasT
Storage TemperatureT
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
SS
MCM72F7
DD
Vin, V
out
P
bias
stg
out
D
A
J
– 0.5 to + 4.6V
– 0.5 to VDD + 0.5V
– 10 to + 85°C
– 55 to + 125°C
= 0 V)
SS
± 20mA
4.6
9.2
0 to 70°C
110°C
W
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised that
normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established.
This device contains circuitry that will ensure
the output devices are in High–Z at power up.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range)V
Input High VoltageV
Input Low VoltageV
*VIL ≥ – 2.0 V for t ≤ t
KHKH
/2.
(Voltages Referenced to VSS = 0 V)
DC CHARACTERISTICS
ParameterSymbolMinMaxUnit
Input Leakage Current (0 V ≤ Vin ≤ VDD)I
Output Leakage Current (0 V ≤ Vin ≤ VDD)I
Output Low Voltage (IOL = + 8.0 mA)V
Output High Voltage (IOH = – 4.0 mA)V
POWER SUPPLY CURRENTS
ParameterSymbolMinMaxUnit
AC Supply Current (Device Selected, All Outputs Open,MCM72F6DG9
Cycle Time ≥ t
CMOS Standby Supply Current (Deselected,MCM72F6DG9
Clock (K) Cycle Time ≥ t
CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)MCM72F6DG12
Clock Running Supply Current (Deselected,MCM72F6DG9
Clock (K) Cycle Time ≥ t
Held to Static CMOS Levels Vin ≤ VSS + 0.2 VMCM72F7DG9
or ≥ VDD – 0.2 V)MCM72F7DG10/12
min)MCM72F6DG10
KHKH
, All Inputs Toggling atMCM72F6DG10
KHKH
, All Other InputsMCM72F6DG10/12
KHKH
MCM72F6DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG12
MCM72F7DG9
MCM72F7DG10
MCM72F7DG912
SymbolMinMaxUnit
DD
IH
IL
lkg(I)
lkg(O)
OL
OH
I
DDA
I
SB1
I
SB2
3.1353.6V
2.0VDD + 0.3V
– 0.5*0.8V
—± 1.0µA
—± 1.0µA
—0.4V
2.4—V
—900
860
840
1800
1720
1680
—440
400
380
880
800
760
—160
140
320
280
mA
mA
mA
MCM72F6 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Parameter
Input CapacitanceW, K
I/O CapacitanceC
= 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
A
Other Inputs
MCM72F6•MCM72F7
6
SymbolTypMaxUnit
C
in
I/O
—
—
—19pF
16
36
pF
MOTOROLA FAST SRAM
Page 7
MCM72F7 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
ParameterSymbolTypMaxUnit
Input CapacitanceW, K
I/O CapacitanceC
= 0 to 70 °C, Periodically Sampled Rather Than 100% Tested)
A
E
Other Inputs
, G
C
in
I/O
—
—
—
—28pF
22
36
60
MASS (Periodically Sampled Rather Than 100% Tested)
Parameter
MCM72F616g
MCM72F720g
MaxUnit
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
DATA RAMs READ/WRITE CYCLE TIMING (See Notes 1, 2, 3 and 4)
MCM72F6–9
MCM72F7–9
ParameterSymbol
Cycle Timet
Clock Access Timet
Output Enable to Output Validt
Clock High to Output Activet
Clock High to Output Changet
Output Enable to Output Activet
Output Disable to Q–High–Zt
Clock High to Q–High–Zt
Clock High Pulse Widtht
Clock Low Pulse Widtht
Setup TimesAddress
Hold Times:Address
NOTES:
1. In setup and hold times, write refers to either any SBx
2. Chip Enable is defined as SE1
3. All read and write cycle timings are referenced from K or G
4. G
is a don’t care after write cycle begins. To prevent bus contention, G should be negated prior to start of write cycle.
5. This parameter is sampled and not 100% tested.
6. Measured at ± 200 mV from steady state.
ADSP
ADSP
Data In
Write
Chip Enable
, ADSC, ADV
Data In
Write
Chip Enable
KHKH
KHQV
GLQV
KHQX1
KHQX2
GLQX
GHQZ
KHQZ
KHKL
KLKH
t
AVKH
t
ADKH
t
DVKH
t
WVKH
t
EVKH
t
KHAX
t
KHADX
t
KHDX
t
KHWX
t
KHEX
low, SE2 high, and SE3 low whenever ADSP or ADSC is asserted.
MinMaxMinMaxMinMax
12—15—16.6—ns
—9—10—12ns
—5—5—6ns
0—0—0—ns5
3—3—3—ns5
0—0—0—ns5
—5—5—6ns5, 6
353536ns5, 6
4—5—6—ns
4—5—6—ns
2.5—2.5—2.5—ns
0.5—0.5—0.5—ns
and SW or SGW is low.
.
MCM72F6–10
MCM72F7–10
MCM72F6–12
MCM72F7–12
UnitNotes
MOTOROLA FAST SRAM
MCM72F6•MCM72F7
7
Page 8
OUTPUT
K
Z0 = 50
Ω
t
KHKH
50
VL = 1.5 V
Ω
Figure 1. AC Test Load
READ/WRITE CYCLES
t
KHKL
TIMING LIMITS
The table of timing values shows either a minimum or a
maximum limit for each parameter. Input requirements are
specified from the external system point of view. Thus, address setup time is shown as a minimum since the system
must supply at least that much time (even though most
devices do not require it). On the other hand, responses
from the memory are specified from the device point of
view. Thus, the access time is shown as a maximum since
the device never provides data later than that time.
t
KLKH
Ax
ADSP
E
W
G
DQx
A
Q(n)Q(A)Q(B)Q(C)D(D)D(E)D(F)Q(G)
t
KHQZ
DESELECTED
BCDEFG
t
t
KHQV
t
KHQX1
t
KHQX2
GHQZ
WRITESREAD
t
GLQV
t
GLQX
ORDERING INFORMATION
(Order by Full Part Number)
READ
Motorola Memory Prefix
Part NumberPackage (DG = Gold Pad DIMM)
MCM72F6•MCM72F7
8
MCM72FXXXXX
Speed (9 = 9 ns, 10 = 10 ns, 12 = 12 ns)
Memory Size (6 = 512KB, 7 = 1 MB)
Full Part Numbers — MCM72F6DG9MCM72F6DG10MCM72F6DG12
MCM72F7DG9MCM72F7DG10MCM72F7DG12
MOTOROLA FAST SRAM
Page 9
ЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙ
ЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙ
D5
P ACKAGE DIMENSIONS
168–LEAD DIMM
CASE 1115J–01
D1
0.15 (0.006)CA B
M
C
L
(DATUM PLANE C)
E
A
A
VIEW D
1
VIEW D
1
1140 4110
94 95
R
K
0.004 (0.1)CA B
M
VIEW A
0.004 (0.1)CA B
L1168X
162X
e
VIEW C
D4
D2
b168X
D3
/2
M
L168X
COMPONENT
AREA
D2
FRONT VIEW
COMPONENT
AREA
BACK VIEW
A5
D6
D4
R
84
VIEW C
VIEW B
VIEW C
R
K
0.004 (0.1)CA B
M
VIEW B
2X A4
A3
2X
2XP
0.004 (0.1)CA B
84
16885
A5
C
0.004 (0.1)CA B
M
A2
2X
M
A1
NOTE 4
E2
NOTE 5
E1
NOTE 6
0.016 (0.4)
M
B
SIDE VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. CARD THICKNESS APPLIES ACROSS TABS AND
INCLUDES PLATING AND/OR METALLIZATION.
4. DIMENSIONS E AND A1 DEFINE A
DOUBLE–SIDED MODULE.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
P.O. B o x 5405, Denver , Colorado, 80217. 1-303-675-2140 or 1-800-441-2447 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 1-602-244-6609ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B T ai Ping Industrial Park,
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Mfax is a trademark of Motorola, Inc.
MCM72F6•MCM72F710
◊
MOTOROLA FASTSRAM
MCM72F6/D
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