Datasheet MCM72F7DG9, MCM72F7DG12, MCM72F6DG12, MCM72F6DG10, MCM72F7DG10 Datasheet (Motorola)

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
512KB and 1MB Synchronous Fast Static RAM Module
Order this document
by MCM72F6/D
MCM72F6 MCM72F7
The MCM72F6 (512KB) is configured as 64K x 72 bits and the MCM72F7 (1MB) is configured as 128K x 72 bits. Both are packaged in a 168–pin dual– in–line memory module DIMM. Each module uses Motorola’s 3.3 V 64K x 18 bit flow–through BurstRAMs.
Address (A), data inputs (DQ, DP), and all control signals except output enable
) are clock (K) controlled through positive–edge–triggered noninverting reg-
(G isters.
Write cycles are internally self–timed and initiated by the rising edge of the clock (K) input. This feature provides increased timing flexibility for incoming signals. Synchronous byte write (W both bytes.
Single 3.3 V + 10%, – 5% Power Supply
Plug and Pin Compatibility with 2MB and 4MB
Multiple Clock Pins for Reduced Loading
All Inputs and Outputs are L VTTL Compatible
Byte Write Capability
Fast SRAM Access Times: 9/10/12 ns
Decoupling Capacitors for Each Fast Static RAM
High Quality Multi–Layer FR4 PWB With Separate Power and Ground
Planes
Amp Connector, Part Number: 390064–4
168–Pin DIMM Module
) allows writes to either individual bytes or to
168–LEAD DIMM
CASE 1115J–01
TOP VIEW
1
11
40 41
REV 3 11/24/97
Motorola, Inc. 1997
MOTOROLA FAST SRAM
84
MCM72F6MCM72F7
1
Page 2
MCM72F6 BLOCK DIAGRAM
E0
G0
A0 – A15
ADSP
W0 W1
K0
V
DD
V
SS
DQ0 – DQ7
DP0
DQ8 – DQ15
DP1
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
SE2 ADV ADSP SGW SW LBO SE3 DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
DQ16 – DQ23
DP2
DQ24 – DQ31
DP3
W2 W3
K1
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
SE2 ADV ADSP SGW SW LBO SE3 DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
DQ32 – DQ39
DP4
DQ40 – DQ47
DP5
W4 W5
K2
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
SE2 ADV ADSP SGW SW LBO SE3 DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
DQ48 – DQ55
DP6
DQ56 – DQ63
DP7
W6 W7
K3
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
SE2 ADV ADSP SGW SW LBO SE3 DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
MCM72F6MCM72F7 2
MOTOROLA FAST SRAM
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MCM72F7 BLOCK DIAGRAM
E0
G0
A0 – A15
ADSP
W0 W1
K0
V
DD
V
SS
DQ0 – DQ7
DP0
DQ8 – DQ15
DP1
V
DD
V
SS
E1
G1
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
SE2 ADV
ADSP SGW
SW LBO SE3
DQ16 – DQ23
DP2
DQ24 – DQ31
DP3
64K x 18
A0 – A15 ADSC
SBa SBb
K DQb8 DQb0 – DQb7
DQa8 DQa0 – DQa7 SE2 ADV ADSP SGW SW LBO SE3
SE1 G
W2 W3
K1
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
SE2 ADV
ADSP SGW
SW LBO SE3
DQ32 – DQ39
DP4
DQ40 – DQ47
DP5
64K x 18
A0 – A15 ADSC
SBa SBb
K DQb8 DQb0 – DQb7 DQa8 DQa0 – DQa7
SE2 ADV ADSP SGW SW LBO SE3
SE1 G
W4 W5
K2
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
SE2 ADV
ADSP SGW
SW LBO SE3
DQ48 – DQ55
DP6
DQ56 – DQ63
DP7
64K x 18
A0 – A15 ADSC
SBa SBb
K DQb8 DQb0 – DQb7 DQa8 DQa0 – DQa7
SE2 ADV ADSP SGW SW LBO SE3
SE1 G
W6 W7
K3
64K x 18
SE1 G A0 – A15 ADSC SBa SBb K
DQa0 – DQa7 DQa8 DQb0 – DQb7 DQb8
SE2 ADV
ADSP SGW
SW LBO SE3
64K x 18
A0 – A15 ADSC
SBa SBb
K DQb8 DQb0 – DQb7 DQa8 DQa0 – DQa7
SE2 ADV ADSP SGW SW LBO SE3
SE1 G
MOTOROLA FAST SRAM
MCM72F6MCM72F7
3
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V
SS
DQ63 DQ62
V
DD
DQ60 DQ58
V
SS
DQ56 DQ55
V
SS
1 2 3 4 5 6 7 8 9 10
85 86 87 88 89 90 91 92 93 94
PIN ASSIGNMENT
168–LEAD DIMM
TOP VIEW
V
SS
DP7 DQ61 V
SS
DQ59 DQ57 V
SS
DP6 DQ54 V
DD
DQ53 DQ51
V
SS
DQ49
DP5
V
DD
DQ46 DQ44
V
SS
DQ42 DQ40
V
SS
DQ39 DQ37
V
SS
DQ35 DQ33
V
SS K3
V
SS
DP3
DQ30
V
DD
DQ28 DQ26
V
SS
DQ24 DQ23
V
SS
DQ21
11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
95 96 97 98
99 100 101 102 103 104 105 106 107 108 109 110
111 112 113 114 115 116 117 118 119 120 121 122 123 124
DQ52 DQ50 V
SS
DQ48 DQ47 V
SS
DQ45 DQ43 V
SS
DQ41 DP4 V
DD
DQ38 DQ36 V
SS
DQ34 DQ32 V
SS
K2 V
SS
DQ31 DQ29 V
SS
DQ27 DQ25 V
SS
DP2 DQ22 V
DD
DQ20
DQ19
V
SS
DQ17
DP1
V
DD
DQ14 DQ12
V
SS
DQ10
DQ8
V
SS
DQ7 DQ5
V
SS
DQ3 DQ1 V
DD NC
NC
V
SS
NC
A14
V
SS
A12 A10
V
SS
A8 A6
V
DD
A4 A2 A0
V
SS
K1
V
SS W7
W5
V
SS
W3 W1
V
SS G1
E1
V
SS
41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84
125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168
DQ18 V
SS
DQ16 DQ15 V
SS
DQ13 DQ11 V
SS
DQ9 DP0 V
DD
DQ6 DQ4 V
SS
DQ2 DQ0 V
SS
NC NC V
SS
A15 A13 V
DD
A11 A9 V
SS
A7 A5 V
SS
A3 A1 ADSP V
SS
K0 V
SS
W6 W4 V
SS
W2 W0 V
DD
G0 E0 V
SS
MCM72F6MCM72F7 4
MOTOROLA FAST SRAM
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PIN DESCRIPTIONS
Pin Locations Symbol
62, 64, 65, 67, 68, 70, 71,
72, 145, 146, 148, 149,
151, 152, 154, 155
156 ADSP Input Synchronous Addresss Status Controller: Initiates read, write, or chip
15, 31, 44, 86, 92, 105, 121,
134
2, 3, 5, 6, 8, 9, 11, 12, 14, 17, 18, 20, 21, 23, 24, 26, 27, 32, 34, 35, 37, 38, 40, 41, 43, 46, 47, 49, 50, 52, 53, 55, 56, 87,
89, 90, 93, 95, 96, 98, 99,
101, 102, 104, 107, 108, 110,
111, 115, 1 16, 118, 119, 122,
124, 125, 127, 128, 130, 131,
133, 136, 137, 139, 140
167, 83 E0, E1 Input Synchronous Chip Enable: Active low to enable chip. Negated high —
166, 82 G0, G1 Input Asynchronous Output Enable Input:
29, 74, 113, 158 K0 – K3 Input Clock: This signal registers the address, data in, and all control signals
76, 77, 79, 80,
160, 161, 163, 164
4, 16, 33, 45, 57, 69, 94,
106, 123, 135, 147, 165
1, 7, 10, 13, 19, 22, 25, 28, 30, 36, 39, 42, 48, 51, 54, 60, 63, 66, 73, 75, 78, 81, 84, 85,
88, 91, 97, 100, 103, 109, 112, 114, 117, 120, 126, 129, 132, 138, 141, 144, 150, 153,
157, 159, 162, 168
58, 59, 61, 142, 143 NC No Connection: There is no connection to the chip.
A0 – A15 Input Synchronous Address Inputs: These inputs are registered and must meet
DP0 – DP7 Synchronous Parity Data Inputs/Outputs.
DQ0 – DQ63 I/O Synchronous Data Inputs/Outputs.
W0 – W7 Input Synchronous Byte Write Inputs: x refers to the byte being written (byte a,
V
DD
V
SS
Type Description
setup and hold times.
deselect cycle.
blocks ADSP 1MB module.
Low — enables output buffer. High — DQx pins are high impedance. G1
is only used on 1MB module.
except G
b). SGW
Supply Power Supply: 3.3 V + 10%, – 5%. Must be connected on all modules.
Supply Ground.
or deselects chip when ADSC is asserted. E1 is only used on
and LBO.
overrides SBx.
DATA RAM MCM69F618A SYNCHRONOUS TRUTH TABLE (See Notes 1, 2, 3 and 4)
Next Cycle Address Used E ADSP G DQx WRITE
Deselect None 1 0 X High–Z X
Begin Read External Address 0 0 0 DQ Read
Read Current X 1 1 High–Z Read Read Current X 1 0 DQ Read
Begin Write External 0 0 X High–Z Write
Write Current X 1 X High–Z Write
NOTES:
1. X = don’t care, 1 = logic high, 0 = logic low.
2. Write is defined as any Wx
3. G
is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (t
4. On write cycles that follow read cycles, G also remain negated at the completion of the write cycle to ensure proper write data hold times.
low.
must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
MOTOROLA FAST SRAM
) following G going low.
GLQX
MCM72F6MCM72F7
5
Page 6
ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to V
Rating Symbol Value Unit
Power Supply Voltage V Voltage Relative to V Output Current (per I/O) I Power Dissipation MCM72F6
Ambient Temperature T Die Temperature T Temperature Under Bias T Storage Temperature T
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
SS
MCM72F7
DD
Vin, V
out
P
bias
stg
out
D
A
J
– 0.5 to + 4.6 V
– 0.5 to VDD + 0.5 V
– 10 to + 85 °C
– 55 to + 125 °C
= 0 V)
SS
± 20 mA
4.6
9.2
0 to 70 °C
110 °C
W
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
This device contains circuitry to protect the inputs against damage due to high static volt­ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated volt­ages to this high–impedance circuit.
This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established.
This device contains circuitry that will ensure the output devices are in High–Z at power up.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range) V Input High Voltage V Input Low Voltage V
*VIL – 2.0 V for t t
KHKH
/2.
(Voltages Referenced to VSS = 0 V)
DC CHARACTERISTICS
Parameter Symbol Min Max Unit
Input Leakage Current (0 V Vin VDD) I Output Leakage Current (0 V Vin VDD) I Output Low Voltage (IOL = + 8.0 mA) V Output High Voltage (IOH = – 4.0 mA) V
POWER SUPPLY CURRENTS
Parameter Symbol Min Max Unit
AC Supply Current (Device Selected, All Outputs Open, MCM72F6DG9 Cycle Time t
CMOS Standby Supply Current (Deselected, MCM72F6DG9 Clock (K) Cycle Time t CMOS Levels Vin VSS + 0.2 V or VDD – 0.2 V) MCM72F6DG12
Clock Running Supply Current (Deselected, MCM72F6DG9 Clock (K) Cycle Time t Held to Static CMOS Levels Vin VSS + 0.2 V MCM72F7DG9 or VDD – 0.2 V) MCM72F7DG10/12
min) MCM72F6DG10
KHKH
, All Inputs Toggling at MCM72F6DG10
KHKH
, All Other Inputs MCM72F6DG10/12
KHKH
MCM72F6DG12
MCM72F7DG9 MCM72F7DG10 MCM72F7DG12
MCM72F7DG9 MCM72F7DG10
MCM72F7DG912
Symbol Min Max Unit
DD
IH IL
lkg(I)
lkg(O)
OL OH
I
DDA
I
SB1
I
SB2
3.135 3.6 V
2.0 VDD + 0.3 V
– 0.5* 0.8 V
± 1.0 µA — ± 1.0 µA — 0.4 V
2.4 V
900
860
840 1800 1720 1680
440
400
380
880
800
760
160
140
320
280
mA
mA
mA
MCM72F6 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Parameter
Input Capacitance W, K
I/O Capacitance C
= 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
A
Other Inputs
MCM72F6MCM72F7 6
Symbol Typ Max Unit
C
in
I/O
— —
19 pF
16 36
pF
MOTOROLA FAST SRAM
Page 7
MCM72F7 CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Parameter Symbol Typ Max Unit
Input Capacitance W, K
I/O Capacitance C
= 0 to 70 °C, Periodically Sampled Rather Than 100% Tested)
A
E
Other Inputs
, G
C
in
I/O
— — —
28 pF
22 36 60
MASS (Periodically Sampled Rather Than 100% Tested)
Parameter
MCM72F6 16 g MCM72F7 20 g
Max Unit
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
pF
Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .
Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time 1 V/ns (20 to 80%). . . . . . . . . . . . . . . . . . . . . . .
Output Timing Reference Level 1.5 V. . . . . . . . . . . . . . . . . . . . . . . . . .
Output Load See Figure 1 Unless Otherwise Noted. . . . . . . . . . . . . .
DATA RAMs READ/WRITE CYCLE TIMING (See Notes 1, 2, 3 and 4)
MCM72F6–9 MCM72F7–9
Parameter Symbol
Cycle Time t Clock Access Time t Output Enable to Output Valid t Clock High to Output Active t Clock High to Output Change t Output Enable to Output Active t Output Disable to Q–High–Z t Clock High to Q–High–Z t Clock High Pulse Width t Clock Low Pulse Width t Setup Times Address
Hold Times: Address
NOTES:
1. In setup and hold times, write refers to either any SBx
2. Chip Enable is defined as SE1
3. All read and write cycle timings are referenced from K or G
4. G
is a don’t care after write cycle begins. To prevent bus contention, G should be negated prior to start of write cycle.
5. This parameter is sampled and not 100% tested.
6. Measured at ± 200 mV from steady state.
ADSP
ADSP
Data In
Write
Chip Enable
, ADSC, ADV
Data In
Write
Chip Enable
KHKH KHQV GLQV
KHQX1 KHQX2
GLQX GHQZ KHQZ
KHKL
KLKH
t
AVKH
t
ADKH
t
DVKH
t
WVKH
t
EVKH
t
KHAX
t
KHADX
t
KHDX
t
KHWX
t
KHEX
low, SE2 high, and SE3 low whenever ADSP or ADSC is asserted.
Min Max Min Max Min Max
12 15 16.6 ns — 9 10 12 ns — 5 5 6 ns
0 0 0 ns 5 3 3 3 ns 5 0 0 0 ns 5
5 5 6 ns 5, 6
3 5 3 5 3 6 ns 5, 6 4 5 6 ns 4 5 6 ns
2.5 2.5 2.5 ns
0.5 0.5 0.5 ns
and SW or SGW is low.
.
MCM72F6–10 MCM72F7–10
MCM72F6–12 MCM72F7–12
Unit Notes
MOTOROLA FAST SRAM
MCM72F6MCM72F7
7
Page 8
OUTPUT
K
Z0 = 50
t
KHKH
50
VL = 1.5 V
Figure 1. AC Test Load
READ/WRITE CYCLES
t
KHKL
TIMING LIMITS
The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, ad­dress setup time is shown as a minimum since the system must supply at least that much time (even though most devices do not require it). On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.
t
KLKH
Ax
ADSP
E
W
G
DQx
A
Q(n) Q(A) Q(B) Q(C) D(D) D(E) D(F) Q(G)
t
KHQZ
DESELECTED
B C D E F G
t
t
KHQV
t
KHQX1
t
KHQX2
GHQZ
WRITESREAD
t
GLQV
t
GLQX
ORDERING INFORMATION
(Order by Full Part Number)
READ
Motorola Memory Prefix Part Number Package (DG = Gold Pad DIMM)
MCM72F6MCM72F7 8
MCM 72F X XX XX
Speed (9 = 9 ns, 10 = 10 ns, 12 = 12 ns)
Memory Size (6 = 512KB, 7 = 1 MB)
Full Part Numbers — MCM72F6DG9 MCM72F6DG10 MCM72F6DG12
MCM72F7DG9 MCM72F7DG10 MCM72F7DG12
MOTOROLA FAST SRAM
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ЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙ
ЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙЙ
D5
P ACKAGE DIMENSIONS
168–LEAD DIMM
CASE 1115J–01
D1
0.15 (0.006) CA B
M
C
L
(DATUM PLANE C)
E
A
A
VIEW D
1
VIEW D
1
11 40 4110
94 95
R
K
0.004 (0.1) CA B
M
VIEW A
0.004 (0.1) CA B
L1168X
162X
e
VIEW C
D4
D2
b168X
D3
/2
M
L168X
COMPONENT
AREA
D2
FRONT VIEW
COMPONENT
AREA
BACK VIEW
A5
D6
D4
R
84
VIEW C
VIEW B
VIEW C
R
K
0.004 (0.1) CA B
M
VIEW B
2X A4
A3
2X
2X P
0.004 (0.1) CA B
84
16885
A5
C
0.004 (0.1) CA B
M
A2
2X
M
A1
NOTE 4
E2
NOTE 5
E1
NOTE 6
0.016 (0.4)
M
B
SIDE VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. CARD THICKNESS APPLIES ACROSS TABS AND INCLUDES PLATING AND/OR METALLIZATION.
4. DIMENSIONS E AND A1 DEFINE A DOUBLE–SIDED MODULE.
5. DIMENSION E2 DEFINES OPTIONAL SINGLE–SIDED MODULE
6. STRAIGHTNESS CALLOUT APPLIES TO TAB AREA ONLY.
7. D5 DIMENSION DEFINES SLOT END AND EDGE OF COMPONENT AREA.
DIM MIN MAX MIN MAX
A 1.095 1.105 27.81 28.07 A1 0.390 ––– 9.90 ––– A2 0.118 BSC 3.00 BSC A3 0.700 BSC 17.78 BSC A4 0.154 0.161 3.90 4.10 A5 0.118 0.128 3.00 3.25
b 0.037 0.041 0.95 1.05 D1 5.245 5.255 133.22 133.48 D2 5.014 BSC 127.35 BSC D3 1.700 BSC 43.18 BSC D4 0.250 BSC 6.35 BSC D5 0.118 ––– 3.00 ––– D6 0.125 BSC 3.175 BSC
e 0.050 BSC 1.27 BSC
E ––– 0.200 ––– 4.00 E1 0.046 0.054 1.17 1.37 E2 ––– 0.148 ––– 2.70
K 0.075 0.083 1.90 2.10
L 0.100 ––– 2.54 ––– L1 ––– 0.010 ––– 0.25
P 0.114 0.122 2.90 3.10
MILLIMETERSINCHES
MOTOROLA FAST SRAM
MCM72F6MCM72F7
9
Page 10
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MCM72F6MCM72F7 10
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