Datasheet MCM69D618TQ8, MCM69D618TQ8R, MCM69D618TQ6, MCM69D618TQ6R Datasheet (Motorola)

Page 1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCM69D618/D
64K x 18 Bit Synchronous Dual I/O, Dual Address SRAM
The MCM69D618 is a 1M–bit static random access memory , organized as 64K words of 18 bits. It features common data input and data output buffers and incorporates input and output registers on–board with high speed SRAM.
The synchronous design allows for precise cycle control with the use of an external single clock (K). All signal pins except output enables (GX registered on the rising edge of clock (K).
The pass–through feature allows data to be passed from one port to the other, in either direction. The PTX port Y. The PTY operation takes precedence over a read operation.
For the case when AX and A Y are the same, certain protocols are followed. If both ports are read, the reads occur normally . If one port is written and the other is read, the read from the array will occur before the data is written. If both ports are written, only the data on DQY will be written to the array .
Single 3.3 V ± 5% Power Supply
Fast Access Times: 6/8 ns Max
Throughput of 1.49 Gigabits/Second
Single Clock Operation
Address, Data Input, E1
On–Chip
83 MHz Maximum Clock Frequency
Self Timed Write
Two Bi–Directional Data Buses
Can be Configured as Separate I/O
Pass–Through Feature
Asynchronous Output Enables (GX
L VTTL Compatible I/O
Concurrent Reads and Writes
100–Pin TQFP Package
Suggested Applications
— A TM — Ethernet Switches — Routers — Cell/Frame Buffers — SNA Switches — Shared Memory
will likewise pass data from port Y to port X. A pass–through
input must be asserted to pass data from port X to
, E2, PTX, PTY, WX, WY, and Data Output Registers
, GY)
, GY) are
MCM69D618
TQ PACKAGE
100 LEAD TQFP
CASE 983A–01
Product Family Configurations
Part
Number
MCM69D536 MCM69D618 MCM67Q709A MCM67Q909
NOTES:
1. Tie AX and AY address ports together for the part to function as a single address part.
2. Tie GX
REV 5 1/16/98
Motorola, Inc. 1998
MOTOROLA FAST SRAM
high for DQX to be inputs and tie WY high and GY low for DQY to be outputs.
Dual
Address
n n
Single
Address
Note 1 Note 1
n n n n
Dual
I/O
n n
Separate
I/O
Note 2 32K x 36 3.3 V Note 2 64K x 18 3.3 V
Configuration V
128K x 9 5.0 V 512K x 9 5.0 V
DD
MCM69D618
1
Page 2
BLOCK DIAGRAM
AX
WX
PTX
E1 E2
GX
16
K
ENABLE
REG 1
ENABLE
REG 2
ADDRESS
REGISTER
WRITE X
REGISTER
PTX
REGISTER
WRITE
DRIVER
DATA IN
REGISTER
64K x 18 ARRAY
SENSE
AMPS
PASS–THROUGH
OUTPUT
REGISTER
DQX
SENSE
AMPS
OUTPUT
REGISTER
DQY
WRITE
DRIVER
DATA IN
REGISTER
ADDRESS
REGISTER
WRITE Y
REGISTER
PTY
REGISTER
K
16
AY
WY
PTY
GY
MCM69D618 2
MOTOROLA FAST SRAM
Page 3
PIN ASSIGNMENT
V
DD
V
SS DQX9 DQY9
DQX10 DQY10
V
DD
V
SS
DQX11 DQY11 DQX12 DQY12
V
DD
V
SS
DQY13 DQX13 DQY14 DQX14
V
DD
V
SS
DQY15 DQX15
DQY16 DQX16
V
DD
V
SS
DQY17 DQX17
AY5
AX5
AX6
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
31 32 33
AY6
AX7
DD
AY7
VSSV
K
94 9397 96 95 89 8892 91 90 86 8587100 99 98 81828384
37 3834 35 36 42 4339 40 41 45 4644
GY
GX
E2
E1
WY
WX
PTY
PTX
AX8
AY8
AX9
AY9
AX15
79
77 76
72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
AY15 V
SS
V
DD DQX8 DQY8
DQX7 DQY7
V
SS V
DD DQX6
DQY6 DQX5
DQY5 V
SS V
DD DQY4 DQX4
DQY3 DQX3 V
SS V
DD DQY2
DQX2 DQY1 DQX1
V
SS V
DD DQY0
DQX0 AY14
80
78
75 74 73
50494847
AY1
AX4
AY3
AX3
AY4
AY2
AX2
AX1
DD
AY0
AX0
V
AX10
AY10
AY11
AX11
AX12
AY12
AY13
AX13
AX14
MOTOROLA FAST SRAM
MCM69D618
3
Page 4
PIN DESCRIPTIONS
Pin Locations Symbol
40, 38, 36, 34, 32, 30, 100, 98, 85,
83, 42, 44, 46, 48, 50, 81
39, 37, 35, 33, 31, 29, 99, 97, 84, 82,
43, 45, 47, 49, 51, 80
52, 56, 58, 62, 64, 69, 71, 75, 77,
3, 5, 9, 11, 16, 18, 22, 24, 28
53, 57, 59, 63, 65, 68, 70, 74, 76,
4, 6, 10, 12, 15, 17, 21, 23, 27
90 E1 Input Synchronous Chip Enable: Active low. 91 E2 Input Synchronous Chip Enable: Active high. 92 GX Input Asynchronous Output Enable Port X Input:
93 GY Input Asynchronous Output Enable Port Y Input:
96 K Input Clock: This signal registers the address, data in, and all control signals
86 PTX Input Pass–Through Port X. 87 PTY Input Pass–Through Port Y. 88 WX Input Synchronous Write Enable Port X. 89 WY Input Synchronous Write Enable Port Y.
1, 7, 13, 19, 25, 41, 54, 60, 66, 72, 78, 95 V
2, 8, 14, 20, 26, 55, 61, 67, 73, 79, 94 V
AX0 –
AX15
AY0 –
AY15
DQX0 –
DQX17
DQY0 –
DQY17
DD SS
Type Description
Input Address Port X. Never allow floating addresses for inputs AX0 – AX15.
Input Address Port Y. Never allow floating addresses for inputs AY0 – AY15.
Supply + 3.3 V Power Supply. Supply Ground.
A pullup resistor is needed.
A pullup resistor is needed.
I/O Data Input/Output Port X.
I/O Data Input/Output Port Y.
Low — enables output buffers (DQXx pins). High — DQXx pins are high impedance.
Low — enables output buffers (DQYx pins). High — DQYx pins are high impedance.
except G
.
MCM69D618 4
MOTOROLA FAST SRAM
Page 5
TRUTH TABLE (See Notes 1 through 5)
Input at tn Clock
Operation Number
1 H X X X X X Deselected 2 X L X X X X Deselected 3 L H 0 X X X Write X Port 4 L H X 0 X X Write Y Port 5 L H X X 0 X Pass–Through X to Y 6 L H X X X 0 Pass–Through Y to X 7 L H 1 X 1 1 Read X 8 L H X 1 1 1 Read Y
NOTES:
1. GX
/GY must be controlled to avoid bus contention issues during write and pass–through cycles.
2. Operation numbers 3 – 6 can be used in any combination.
3. Operation numbers 4 and 7, 3 and 8, 7 and 8 can be combined.
4. Operation number 5 can not be combined with operation number 7 or 8 because pass–through takes precedence over a read operation.
5. Operation number 6 can not be combined with operation number 7 or 8 because pass–through takes precedence over a read operation.
E1 E2 WX WY PTX PTY Operation
K
ADDRESS & CONTROL
DATA INPUT D
DATA OUTPUT Q
t
n
VALID
VALID
PASS–THROUGH
tn +
PIPELINED READ ACCESS
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Power Supply Voltage V Voltage Relative to VSS for Any Pin
Except V Output Current I Power Dissipation P Temperature Under Bias T Operating Temperature T Storage Temperature — Plastic T
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
DD
exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Symbol Value Unit
DD
Vin, V
out
bias
stg
out
D
A
– 0.5 to + 4.6 V
– 0.5 to VDD + 0.5 V
± 20 mA TBD W
– 10 to + 85 °C
0 to + 70 °C
– 55 to + 125 °C
1
VALID
This is a synchronous device. All synchro­nous inputs must meet specified setup and hold times with stable logic levels for edges of clock (K) while the device is selected.
This device contains circuitry to protect the inputs against damage due to high static volt­ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maxi­mum rated voltages to these high–impedance circuits.
ALL
rising
MOTOROLA FAST SRAM
MCM69D618
5
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PACKAGE THERMAL CHARACTERISTICS (See Note 1)
Rating
Junction to Ambient (@ 200 lfm) Single–Layer Board
Four–Layer Board Junction to Board (Bottom) R Junction to Case (Top) R
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
Symbol TQFP Unit Notes
R
θJA
θJB θJC
40 25
17 °C/W 3
9 °C/W 4
°C/W 2
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND SUPPLY CURRENTS
Parameter Symbol Min Max Unit
Supply Voltage (Operating Voltage Range) V Input High Voltage V Input Low Voltage V Input Leakage Current (All Inputs, Vin = 0 to VDD) I Output Leakage Current (E = VIH, V AC Supply Current (I
CMOS Standby Supply Current (Deselected, Clock (K) MCM69D618–6 ns Cycle Time t Vin VSS + 0.2 V or VDD – 0.2 V)
Output Low Voltage (IOL = + 8.0 mA) V Output High Voltage (IOH = – 4.0 mA) V
*VIL –1.5 V for t t
**VIH VDD + 1.0 V for t t
KHKH
= 0 mA) (VDD = max, f = f
out
, All Inputs Toggling at CMOS Levels MCM69D618–8 ns
/2.
KHKH
KHKH
= 0 to VDD) I
out
) MCM69D618–6 ns
max
/2.
MCM69D618–8 ns
lkg(O) I
DD
IH IL
lkg(I)
DDA
I
SB1
OL
OH
3.135 3.465 V
2.0 VDD + 0.5** V
– 0.5* 0.8 V
± 1.0 µA — ± 1.0 µA —
— —
0.4 V
2.4 V
300 300
100 100
DD
mA
mA
V
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Address and Data Input Capacitance C Control Pin Input Capacitance C Output Capacitance C
= 0 to + 70°C, Periodically Sampled Rather Than 100% Tested)
A
Parameter
Symbol Max Unit
in in
out
6 pF 6 pF 8 pF
MCM69D618 6
MOTOROLA FAST SRAM
Page 7
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .
Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time 3 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing Reference Level 1.5 V. . . . . . . . . . . . . . . . . . . . . . . . . .
Output Load Figure 1 Unless Otherwise Noted. . . . . . . . . . . . . . . . . .
READ/WRITE CYCLE TIMING
MCM69D618–6 MCM69D618–8
Parameter Symbol
Cycle Time t Clock Access Time t Clock Low Pulse Width t Clock High Pulse Width t Clock High to Data Output Active t Clock High to Data Output Invalid t Clock High to Data Output High–Z t Output Enable Low to Data Output Valid t Output Enable Low to Data Output Low–Z t Output Enable High to Data Output High–Z t Setup Times: AWR0 – AWR14
Hold Times: AWR0 – AWR14
NOTES:
1. All read and write cycles are referenced from K.
2. This parameter is sampled and not 100% tested.
3. This is a synchronous device. All synchronous inputs must meet the specified setup and hold times with stable logic levels for edges of clock (K) while the device is selected.
4. t
minimum for Port Y only extends to 4.0 ns only for the special case when the Y– and X–address are identical on the same rising
KHDX
clock edge.
ARD0 – ARD14
W
PT
E1, E2
D0 – D35
ARD0 – ARD14
W
PT
E1, E2
D0 – D35
KHKH KHQV
KLKH
KHKL KHQX1 KHQX2
KHQZ GLQV GLQX GHQZ
t
AVKH
t
AVKH
t
WVKH
t
PTVKH t
EVKH
t
DVKH
t
KHAX
t
KHAX
t
KHWX
t
KHPTX t
KHEX
t
KHDX
Min Max Min Max
12 15 ns 1 — 6 8 ns
4 6 ns 4 6 ns 0 0 ns
2 2 ns — 5 5 ns 2 — 6 8 ns
0 — 5 8 ns 2
2.5 3 ns 3
0.5 1 ns 3
0 ns
Unit Notes
3 3 3 3
3, 4
ALL
rising
MOTOROLA FAST SRAM
OUTPUT
Z0 = 50
Figure 1. AC Test Load
RL = 50
VL = 1.5 V
MCM69D618
7
Page 8
READ CYCLE TIMING FROM BOTH PORTS (WX, WY, PTX, PTY HIGH)
t
KHKH t
K
KLKH
t
KHKL
PORT X
PORT Y
AX
GX
DQX
AY
GY
t
AVKH
1
t
KHQX1
E
12
2 3 4 5 6 7 8 9
t
KHQV
Q(1) Q(2) Q(3) Q(5) Q(6)
t
EVKH
t
KHEX
13 14 15 16 6 7 19 20
t
KHAX
t
GHQZ
Q(7)
t
GLQX
t
GLQV
DQY
NOTE: E Low = E1 Low and E2 High. E High = E1 High or E2 Low.
Q(12) Q(13) Q(14) Q(16) Q(6) Q(7)
t
KHQZ
t
KHQV
MCM69D618 8
MOTOROLA FAST SRAM
Page 9
WRITE CYCLE TIMING TO BOTH PORTS (PTX, PTY HIGH)
PORT X
AX
WX
GX
DQX
t
KHKH
K
1 2 3 4 5 6 7 8 9
t
t
WVKH
D(2) D(3) D(4)
E
KHWX
t
DVKH
t
KLKH
t
KHDX
t
KHKL
D(8) D(9)
AY
WY
PORT Y
GY
DQY
NOTE: E Low = E1 Low and E2 High. E High = E1 High or E2 Low.
12 13 14
D(14) D(15) D(19)D(18)
15
5 6 18 19 20
D(5) D(6)
PORT Y TAKES PRECEDENCE
OVER PORT X WHEN AX = AY
AND WRITING BOTH PORTS.
MOTOROLA FAST SRAM
MCM69D618
9
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WRITE TO PORT X AND PASS–THROUGH TO PORT Y (See Note)
PORT X
AX
WX
GX
PTX
DQX
E
t
KHKH
K
1 2 3 4 5 6 7 8 9
t
KHPTX
t
DVKH
D(2) D(3) D(X) D(Y) D(6)
t
KLKH
t
KHDX
t
PTVKH
t
KHKL
AY
WY
PORT Y
E Low = E1 Low and E2 High. E High = E1 High or E2 Low. NOTE: The timing diagram is valid for the opposite case as well, i.e., writing to Port Y and passing through to Port X.
GY
PTY
DQY
12 13 14
t
KHQV
t
KHQX2
15
16 17 18 19 20
t
KHQZ
D(3) D(X)
D(Y)
D(17)
MCM69D618 10
MOTOROLA FAST SRAM
Page 11
COMBINATION READ/WRITE WITH SAME ADDRESS ON EACH PORT
PORT X
AX
WX
GX
DQX
AY
K
TRY TO
WRITE
D(ABC) D(DEF)
WRITE WRITE
t
KHKH
TRY TO
WRITE
1
1 2 1 2 3
2 1 2 3
READ READ READ READ READ READ
READ READ READ WRITE READ READ
t
KLKH
23
t
KHKL
Q(XYZ) Q(JKL)Q(PQR)
WY
PORT Y
GY
DQY
PTX = PTY = high. D(Value) = Value is the input to the data port. Q(Value) = Value is the output from the data port.
D(PQR) D(XYZ) Q(PQR) D(JKL) Q(JKL)
PORT Y TAKES PRECEDENCE
OVER PORT X WHEN AX = AY
AND WRITING BOTH PORTS.
Q3
MOTOROLA FAST SRAM
MCM69D618
11
Page 12
Motorola Memory Prefix Part Number
ORDERING INFORMATION
(Order by Full Part Number)
MCM 69D618 XX XX X
Shipping Method (R = Tape and Reel,
Blank = Rails)
Speed (6 = 6ns, 8 = 8 ns) Package (TQ = TQFP)
Full Part Numbers — MCM69D618TQ6 MCM69D618TQ8
MCM69D618TQ6R MCM69D618TQ8R
MCM69D618 12
MOTOROLA FAST SRAM
Page 13
P ACKAGE DIMENSIONS
4X
A–B0.20 (0.008) H
D
80 51
–D–
TQFP PACKAGE
100 PIN
CASE 983A–01
2X 30 TIPS
A–B0.20 (0.008) C D
e
e/2
–A–
–H– –C–
SEATING PLANE
0.05 (0.002)
81
100
S
2X 20 TIPS
A
A2
A1
D1/2
C D
S
R1
VIEW AB
50
E/2
–B–
E1
E
E1/2
31
301
BASE
METAL
B B
–X–
X=A, B, OR D
VIEW Y
PLATING
b1
c
c1
D/2
D1
D
A–B0.20 (0.008)
q
2
q
3
0.10 (0.004)
NOTES:
C
VIEW AB
q
1
0.25 (0.010)
GAGE PLANE
R2
L2
L
q
L1
0.13 (0.005) D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.
4. DATUMS –A–, –B– AND –D– TO BE DETERMINED AT DATUM PLANE –H–.
5. DIMENSIONS D AND E TO BE DETERMINED AT SEATING PLANE –C–.
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS D1 AND B1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE b DIMENSION TO EXCEED 0.45 (0.018).
DIM MIN MAX MIN MAX
A ––– 1.60 ––– 0.063 A1 0.05 0.15 0.002 0.006 A2 1.35 1.45 0.053 0.057
b 0.22 0.38 0.009 0.015
b1 0.22 0.33 0.009 0.013
c 0.09 0.20 0.004 0.008
c1 0.09 0.16 0.004 0.006
D 22.00 BSC 0.866 BSC D1 20.00 BSC 0.787 BSC
E 16.00 BSC 0.630 BSC E1 14.00 BSC 0.551 BSC
e 0.65 BSC 0.026 BSC
L 0.45 0.75 0.018 0.030
L1 1.00 REF 0.039 REF L2 0.50 REF
S 0.20 ––– 0.008 ––– R1 0.08 ––– 0.003 ––– R2 0.08 0.20 0.003 0.008
q q
1
q
2
q
3
b
M
S
A–B
C
SECTION B–B
INCHESMILLIMETERS
0.020 REF
0 7 0 7
_
_
_
0 ––– 0 –––
_
11 13 11 13
_
_
11 13 11 13
_
_
_ _ _
_ _
_
S
MOTOROLA FAST SRAM
MCM69D618
13
Page 14
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MCM69D618 14
MOTOROLA FAST SRAM
MCM69D618/D
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