The MCM6709BR is a 262,144 bit static random access memory organized as
65,536 words of 4 bits. Static design eliminates the need for external clocks or
timing strobes.
Output enable (G
) is a special control feature that provides increased system
flexibility and eliminates bus contention problems.
The MCM6709BR meets JEDEC standards and is available in a revolutionary
pinout 300 mil, 28 lead plastic surface–mount SOJ package.
• Single 5 V ± 10% Power Supply
• Fully Static — No Clock or Timing Strobes Necessary
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
Power Supply VoltageV
Voltage Relative to VSS for Any Pin
Except V
Output Current (per I/O)I
Power DissipationP
Temperature Under BiasT
Operating TemperatureT
Storage Temperature — PlasticT
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
CC
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
SymbolValueUnit
CC
Vin, V
out
bias
stg
out
D
A
– 0.5 to + 7.0V
– 0.5 to VCC + 0.5V
± 30mA
2.0W
– 10 to + 85°C
0 to + 70°C
– 55 to + 125°C
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid application of any voltage higher than maximum
rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
ParameterSymbolMinTypMaxUnit
Supply Voltage (Operating Voltage Range)V
Input High VoltageV
Input Low VoltageV
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
CC
IH
IL
DC CHARACTERISTICS
ParameterSymbolMinMaxUnit
Input Leakage Current (All Inputs, Vin = 0 to VCC)I
Output Leakage Current (E = VIH, V
Output High Voltage (IOH = – 4.0 mA)V
Output Low Voltage (IOL = 8.0 mA)V
Read Cycle Timet
Address Access Timet
Chip Enable Access Timet
Output Enable Access Timet
Output Hold from Address Changet
Chip Enable Low to Output Activet
Output Enable Low to Output Activet
Chip Enable High to Output High–Zt
Output Enable High to Output High–Zt
NOTES:
1. W
is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus
contention conditions during read and write cycles.
3. All read cycle timings are referenced from the last valid address to the first transitioning address.
4. At any given voltage and temperature, t
device and from device to device.
5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
The table of timing values shows either a
minimum or a maximum limit for each parameter. Input requirements are specified from
the external system point of view. Thus, address setup time is shown as a minimum
since the system must supply at least that
much time. On the other hand, responses
from the memory are specified from the device point of view. Thus, the access time is
shown as a maximum since the device never
provides data later than that time.
TIMING LIMITS
Figure 1. AC Test Loads
MCM6709BR
3
Page 4
A (ADDRESS)
READ CYCLE 1 (See Note)
t
AXQX
t
AVAV
Q (DATA OUT)
NOTE: Device is continuously selected (E = VIL, G = VIL).
A (ADDRESS)
E
(CHIP ENABLE)
(OUTPUT ENABLE)
G
Q (DATA OUT)
t
AVQV
READ CYCLE 2 (See Note)
t
AVAV
t
ELQV
t
ELQX
t
t
t
AVQV
GLQX
GLQV
DATA VALID
DATA VALIDPREVIOUS DATA VALID
t
EHQZ
t
GHQZ
NOTE: Addresses valid prior to or coincident with E going low.
MCM6709BR
4
MOTOROLA FAST SRAM
Page 5
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
MCM6709BR–6MCM6709BR–7MCM6709BR–8
ParameterSymbolMinMaxMinMaxMinMaxUnitNotes
Write Cycle Timet
Address Setup Timet
Address Valid to End of W ritet
Write Pulse Widtht
Data Valid to End of W ritet
Data Hold Timet
Write Low to Data High–Zt
Write High to Output Activet
Write Recovery Timet
NOTES:
1. A write occurs during the overlap of E
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus
contention conditions during read and write cycles.
3. All write cycle timing is referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady state voltage with load of Figure 1b.
5. This parameter is sampled and not 100% tested.
6. At any given voltage and temperature, t
AVAV
AVWL
AVWH
WLWH
t
WLEH
DVWH
WHDX
WLQZ
WHQX
WHAX
low and W low.
max is less than t
WLQZ
6—7—8—ns3
0—0—0—ns
6—7—8—ns
6—7—8—ns
3—3.5—3.5—ns
0—0—0—ns
—3.5—3.5—3.5ns4, 5, 6
3—3—3—ns4, 5, 6
0—0—0—ns
min both for a given device and from device to device.
WHQX
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
HIGH–Z
t
AVWL
WRITE CYCLE 1
t
WLQZ
t
AVAV
t
AVWH
t
WLWH
t
WLEH
HIGH–Z
t
DVWH
DATA VALID
t
WHAX
t
WHDX
t
WHQX
MOTOROLA FAST SRAM
MCM6709BR
5
Page 6
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
MCM6709BR–6MCM6709BR–7MCM6709BR–8
ParameterSymbolMinMaxMinMaxMinMaxUnitNotes
Write Cycle Timet
Address Setup Timet
Address Valid to End of W ritet
Chip Enable to End of Writet
Data Valid to End of W ritet
Data Hold Timet
Write Recovery Timet
NOTES:
1. A write occurs during the overlap of E
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus
contention conditions during read and write cycles.
3. All write cycle timing is referenced from the last valid address to the first transitioning address.
4. If E
goes low coincident with or after W goes low, the output will remain in a high impedance condition.
5. If E
goes high coincident with or before W goes high, the output will remain in a high impedance condition.
2. DIMENSION A & B DO NOT INCLUDE MOLD
PROTRUSION. MOLD PROTRUSION SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
3. CONTROLLING DIMENSION: INCH.
4. DIM R TO BE DETERMINED AT DATUM -T-.
5. 810B-01 AND -02 OBSOLETE, NEW STANDARD
810B-03.
MILLIMETERSINCHES
MINMINMAXMAX
DIM
A
B
C
D
E
F
G
H
K
L
M
N
P
R
S
18.29
7.50
3.26
0.39
2.24
0.67
1.27 BSC
—
0.89
0.64 BSC
0
°
0.76
8.38
6.60
0.77
18.54
7.74
3.75
0.50
2.48
0.81
0.50
1.14
10
1.14
8.64
6.86
1.01
°
0.720
0.295
0.128
0.015
0.088
0.026
0.050 BSC
—
0.035
0.025 BSC
0
°
0.030
0.330
0.260
0.030
0.730
0.305
0.148
0.020
0.098
0.032
0.020
0.045
10
0.045
0.340
0.270
0.040
°
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE /Locations Not Listed: Motorola Literature Distribution;JAP AN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
MOTOROLA FASTSRAM
◊
MCM6709BR/D
MCM6709BR
7
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