Datasheet MCM6709BRJ6, MCM6709BRJ8, MCM6709BRJ8R, MCM6709BRJ7, MCM6709BRJ6R Datasheet (Motorola)

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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64K x 4 Bit Static RAM
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by MCM6709BR/D
MCM6709BR
The MCM6709BR is a 262,144 bit static random access memory organized as 65,536 words of 4 bits. Static design eliminates the need for external clocks or timing strobes.
) is a special control feature that provides increased system
flexibility and eliminates bus contention problems.
The MCM6709BR meets JEDEC standards and is available in a revolutionary pinout 300 mil, 28 lead plastic surface–mount SOJ package.
Single 5 V ± 10% Power Supply
Fully Static — No Clock or Timing Strobes Necessary
All Inputs and Outputs are TTL Compatible
Center Power and I/O Pins for Reduced Noise
Three State Outputs
Fast Access Times:
MCM6709BR–6 = 6 ns MCM6709BR–7 = 7 ns MCM6709BR–8 = 8 ns
BLOCK DIAGRAM
A A A
DQ
DQ
A
A A A A A
E
DECODER
CONTROL
ROW
INPUT
DATA
MEMORY MATRIX
512 ROWS x 128 x 4
COLUMNS
COLUMN I/O
COLUMN DECODER
AAAAAAA
J PACKAGE 300 MIL SOJ
CASE 810B–03
PIN ASSIGNMENT
V
V
DQ
CC SS
DQ
W
1
A A
2
A
3
A
4
E
5 6 7 8 9 10
A
11
A
12
A
13
A
14
28 27 26 25 24 23 22 21 20 19
18 17 16
15
A A A A G DQ
V V
DQ A A A A NC
SS CC
PIN NAMES
A Address Inputs. . . . . . . . . . . . . . . . . . .
W G E
DQ Data Input/Output. . . . . . . . . . . . . . .
V
CC
V
SS
NC No Connection. . . . . . . . . . . . . . . . .
All power supply and ground pins must be connected for proper operation of the device.
Write Enable. . . . . . . . . . . . . . . . . . . .
Output Enable. . . . . . . . . . . . . . . . . . .
Chip Enable. . . . . . . . . . . . . . . . . . . . . .
+ 5 V Power Supply. . . . . . . . . . . .
Ground. . . . . . . . . . . . . . . . . . . . . . .
W G
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 2 3/17/97
Motorola, Inc. 1997
MOTOROLA FAST SRAM
MCM6709BR
1
Page 2
TRUTH TABLE (X = Don’t Care)
E
H X X Not Selected High–Z — L H H Read High–Z — L L H Read D L X L Write D
G W Mode Output Cycle
out
in
Read Cycle Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Power Supply Voltage V Voltage Relative to VSS for Any Pin
Except V Output Current (per I/O) I Power Dissipation P Temperature Under Bias T Operating Temperature T Storage Temperature — Plastic T
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
CC
exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Symbol Value Unit
CC
Vin, V
out
bias
stg
out
D
A
– 0.5 to + 7.0 V
– 0.5 to VCC + 0.5 V
± 30 mA
2.0 W
– 10 to + 85 °C
0 to + 70 °C
– 55 to + 125 °C
This device contains circuitry to protect the inputs against damage due to high static volt­ages or electric fields; however, it is advised that normal precautions be taken to avoid appli­cation of any voltage higher than maximum rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been de­signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage (Operating Voltage Range) V Input High Voltage V Input Low Voltage V
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width 2.0 ns) or I 30.0 mA.
** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width 2.0 ns) or I 30.0 mA.
CC
IH
IL
DC CHARACTERISTICS
Parameter Symbol Min Max Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC) I Output Leakage Current (E = VIH, V Output High Voltage (IOH = – 4.0 mA) V Output Low Voltage (IOL = 8.0 mA) V
= 0 to VCC) I
out
POWER SUPPLY CURRENTS
Parameter Symbol MCM6709BR–6 MCM6709BR–7 MCM6709BR–8 Unit Notes
AC Active Supply Current (I
f = f
)
max
AC Standby Current (E = VIH, VCC = max, f = f CMOS Standby Current (VCC = max, f = 0 MHz,
E
VCC – 0.2 V, Vin VSS, or VCC – 0.2 V)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
= 0 mA, VCC = max,
out
max
) I
I
CCA
SB1
I
SB2
215 205 195 mA 1, 2, 3
95 85 75 mA 1, 2, 3 20 20 20 mA
4.5 5.0 5.5 V
2.2 VCC + 0.3* V
– 0.5** 0.8 V
lkg(I)
lkg(O)
OH
OL
± 1.0 µA — ± 1.0 µA
2.4 V — 0.4 V
MCM6709BR 2
MOTOROLA FAST SRAM
Page 3
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Address Input Capacitance C Control Pin Input Capacitance(E, G, W) C Input/Output Capacitance C
= 25°C, Periodically Sampled Rather Than 100% Tested)
A
Parameter
Symbol Max Unit
in in
I/O
5 pF 6 pF 6 pF
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .
Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time 2 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ CYCLES 1 AND 2 (See Notes 1 and 2)
MCM6709BR–6 MCM6709BR–7 MCM6709BR–8
Parameter Symbol Min Max Min Max Min Max Unit Notes
Read Cycle Time t Address Access Time t Chip Enable Access Time t Output Enable Access Time t Output Hold from Address Change t Chip Enable Low to Output Active t Output Enable Low to Output Active t Chip Enable High to Output High–Z t Output Enable High to Output High–Z t
NOTES:
1. W
is high for read cycle.
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles.
3. All read cycle timings are referenced from the last valid address to the first transitioning address.
4. At any given voltage and temperature, t device and from device to device.
5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
6. This parameter is sampled and not 100% tested.
AVAV AVQV ELQV GLQV AXQX ELQX GLQX EHQZ
GHQZ
max is less than t
EHQZ
6 7 8 ns 3 — 6 7 8 ns — 6 7 8 ns — 4 4 4 ns
3 3 3 ns
3 3 3 ns 4, 5, 6
0 0 0 ns 4, 5, 6 — 3 3.5 3.5 ns 4, 5, 6 — 3 3.5 3.5 ns 4, 5, 6
Output Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . .
Output Load See Figure 1a. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ELQX
min, and t
max is less than t
GHQZ
min, both for a given
GLQX
OUTPUT
Z0 = 50
(a) (b)
MOTOROLA FAST SRAM
RL = 50
VL = 1.5 V
+5 V
480
OUTPUT
255
5 pF
The table of timing values shows either a minimum or a maximum limit for each param­eter. Input requirements are specified from the external system point of view. Thus, ad­dress setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the de­vice point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.
TIMING LIMITS
Figure 1. AC Test Loads
MCM6709BR
3
Page 4
A (ADDRESS)
READ CYCLE 1 (See Note)
t
AXQX
t
AVAV
Q (DATA OUT)
NOTE: Device is continuously selected (E = VIL, G = VIL).
A (ADDRESS)
E
(CHIP ENABLE)
(OUTPUT ENABLE)
G
Q (DATA OUT)
t
AVQV
READ CYCLE 2 (See Note)
t
AVAV
t
ELQV
t
ELQX
t
t
t
AVQV
GLQX
GLQV
DATA VALID
DATA VALIDPREVIOUS DATA VALID
t
EHQZ
t
GHQZ
NOTE: Addresses valid prior to or coincident with E going low.
MCM6709BR 4
MOTOROLA FAST SRAM
Page 5
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
MCM6709BR–6 MCM6709BR–7 MCM6709BR–8
Parameter Symbol Min Max Min Max Min Max Unit Notes
Write Cycle Time t Address Setup Time t Address Valid to End of W rite t Write Pulse Width t
Data Valid to End of W rite t Data Hold Time t Write Low to Data High–Z t Write High to Output Active t Write Recovery Time t
NOTES:
1. A write occurs during the overlap of E
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles.
3. All write cycle timing is referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady state voltage with load of Figure 1b.
5. This parameter is sampled and not 100% tested.
6. At any given voltage and temperature, t
AVAV AVWL AVWH
WLWH
t
WLEH
DVWH WHDX
WLQZ
WHQX WHAX
low and W low.
max is less than t
WLQZ
6 7 8 ns 3 0 0 0 ns 6 7 8 ns 6 7 8 ns
3 3.5 3.5 ns 0 0 0 ns
3.5 3.5 3.5 ns 4, 5, 6
3 3 3 ns 4, 5, 6 0 0 0 ns
min both for a given device and from device to device.
WHQX
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
HIGH–Z
t
AVWL
WRITE CYCLE 1
t
WLQZ
t
AVAV
t
AVWH
t
WLWH
t
WLEH
HIGH–Z
t
DVWH
DATA VALID
t
WHAX
t
WHDX
t
WHQX
MOTOROLA FAST SRAM
MCM6709BR
5
Page 6
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
MCM6709BR–6 MCM6709BR–7 MCM6709BR–8
Parameter Symbol Min Max Min Max Min Max Unit Notes
Write Cycle Time t Address Setup Time t Address Valid to End of W rite t Chip Enable to End of Write t
Data Valid to End of W rite t Data Hold Time t Write Recovery Time t
NOTES:
1. A write occurs during the overlap of E
2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles.
3. All write cycle timing is referenced from the last valid address to the first transitioning address.
4. If E
goes low coincident with or after W goes low, the output will remain in a high impedance condition.
5. If E
goes high coincident with or before W goes high, the output will remain in a high impedance condition.
AVAV AVEL AVEH
,
ELEH
t
ELWH DVEH EHDX
EHAX
low and W low.
6 7 8 ns 3 0 0 0 ns 6 7 8 ns 5 6 7 ns 4, 5
3 3.5 3.5 ns 0 0 0 ns 0 0 0 ns
WRITE CYCLE 2
t
AVAV
A (ADDRESS)
(CHIP ENABLE)
E
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
Motorola Memory Prefix Part Number
t
AVEL
ORDERING INFORMATION
(Order by Full Part Number)
MCM 6709BR X X X
t
AVEH
HIGH–Z
t
ELEH
t
ELWH
t
DVEH
DATA VALID
Shipping Method (R = Tape and Reel, Blank = Rails) Speed (6 = 6 ns, 7 = 7 ns, 8 = 8 ns)
t
EHAX
t
EHDX
MCM6709BR 6
Package (J = 300 mil SOJ)
Full Part Numbers — MCM6709BRJ6 MCM6709BRJ6R
MCM6709BRJ7 MCM6709BRJ7R MCM6709BRJ8 MCM6709BRJ8R
MOTOROLA FAST SRAM
Page 7
28 LEAD
300 MIL SOJ
CASE 810B–03
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
F
DETAIL Z
28
1
15
14
N
24 PL
D
0.18 (0.007)MTSA
P
-B-
R
S
C
E
S RAD
S
-A-
H BRK
0.18 (0.007) TSB
L
M
K
G
DETAIL Z
0.10 (0.004)
SEATING PLANE
-T-
M
0.25 (0.010) TSB
Y14.5M, 1982.
2. DIMENSION A & B DO NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
3. CONTROLLING DIMENSION: INCH.
4. DIM R TO BE DETERMINED AT DATUM -T-.
5. 810B-01 AND -02 OBSOLETE, NEW STANDARD 810B-03.
MILLIMETERS INCHES
MIN MINMAX MAX
DIM
A B C D E F G H K L M N P R S
18.29
7.50
3.26
0.39
2.24
0.67
1.27 BSC
0.89
0.64 BSC
0
°
0.76
8.38
6.60
0.77
18.54
7.74
3.75
0.50
2.48
0.81
0.50
1.14
10
1.14
8.64
6.86
1.01
°
0.720
0.295
0.128
0.015
0.088
0.026
0.050 BSC —
0.035
0.025 BSC
0
°
0.030
0.330
0.260
0.030
0.730
0.305
0.148
0.020
0.098
0.032
0.020
0.045
10
0.045
0.340
0.270
0.040
°
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MOTOROLA FAST SRAM
MCM6709BR/D
MCM6709BR
7
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