Datasheet MCL4151 Datasheet (VISHAY)

Page 1
Silicon Epitaxial Planar Diode
Features
D
D
Micro Melf package
Applications
Extreme fast switches
MCL4151
Vishay Telefunken
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage V Reverse voltage V Peak forward surge current tp=1ms I Repetitive peak forward current I Forward current I Average forward current VR=0 I Power dissipation P Junction temperature T Storage temperature range T
FSM FRM
RRM
R
F
FAV
V
j
stg
75 V 50 V
2 A 450 mA 200 mA 150 mA 500 mW 175
–65...+175
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1, 35mm
copper clad, 0.9 mm2 copper area per electrode
R
thJA
500 K/W
°
C
°
C
Document Number 85567 Rev. 3, 01-Apr-99 1 (4)
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Page 2
MCL4151
g
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=50mA V Reverse voltage VR=50V I
VR=50V, Tj=150°C I Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms V Diode capacitance VR=0, f=1MHz, VHF=50mV C Reverse recovery time IF=IR=10mA, iR=1mA t
IF=10mA, VR=6V, iR=0.1xIR,
R
=100
W
L
Characteristics (Tj = 25_C unless otherwise specified)
0.71 1.3
1.27
Wave Soldering
F R R
(BR)
D rr
t
rr
0.88 1 V 50 nA 50
m
75 V
2 pF 4 ns 2 ns
95 10331
A
25
10
95 10329
Figure 1. Board for R
Reflow Soldering
1.2
0.152
0.355
2.5
24
definition (in mm)
thJA
0.6 0.6
1.2
2.4
95 10330
9.9
1.4
0.7 0.7
1.4
2.8
Figure 3. Recommended foot pads (in mm)
100
Scattering Limit
10
m
1
0.1
R
I – Reverse Current ( A )
VR=50V
94 9151
0.01 0 40 80 120 160
Tj – Junction Temperature ( °C )
200
Figure 2. Recommended foot pads (in mm)
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Figure 4. Reverse Current vs. Junction Temperature
Rev. 3, 01-Apr-992 (4)
Page 3
MCL4151
Vishay Telefunken
1000
Tj=100°C
Tj=25°C
VF – Forward Voltage ( V )
F
I – Forward Current ( mA )
94 9152
100
10
1
0.1 0 0.4 0.8 1.2 1.6
Figure 5. Forward Current vs. Forward Voltage
Dimensions in mm
2.0
3.0
2.5
2.0
1.5
1.0
D
C – Diode Capacitance ( pF )
0.5
0
0.1 1 10
94 9153
VR – Reverse Voltage ( V )
f=1 MHz T
=25°C
j
100
Figure 6. Diode Capacitance vs. Reverse Voltage
96 12072
Document Number 85567 Rev. 3, 01-Apr-99 3 (4)
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Page 4
MCL4151
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85567
Rev. 3, 01-Apr-994 (4)
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