Page 1
Silicon Epitaxial Planar Diodes
Features
D
Saving space
D
Hermetic sealed parts
D
Fits onto SOD 323 / SOT 23 footprints
D
Electrical data identical with the devices 1N4148
and 1N4448 respectively
D
Micro Melf package
Applications
Extreme fast switches
MCL4148.MCL4448
Vishay Telefunken
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation P
Junction temperature T
Storage temperature range T
FSM
FRM
RRM
R
F
FAV
V
j
stg
100 V
75 V
2 A
450 mA
200 mA
150 mA
500 mW
175
–65...+175
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1, 35mm
copper clad, 0.9 mm2 copper area per electrode
R
thJA
500 K/W
°
C
°
C
Rev. 3, 01-Apr-99 1 (5)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85566
Page 2
MCL4148.MCL4448
g
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=5mA MCL4448 V
IF=50mA MCL4148 V
IF=100mA MCL4448 V
Reverse current VR=20V I
VR=20V, Tj=150°C I
VR=75V I
Breakdown voltage IR=100mA, tp/T=0.01,
tp=0.3ms
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Rectification efficiency VHF=2V, f=100MHz
Reverse recovery time IF=IR=10mA, iR=1mA t
IF=10mA, VR=6V, iR=0.1xIR,
RL=100
W
V
F
F
F
R
R
R
(BR)
D
h
r
rr
t
rr
0.62 0.72 V
0.86 1 V
0.93 1 V
25 nA
50
m
5
m
100 V
4 pF
45 %
8 ns
4 ns
A
A
Characteristics (Tj = 25_C unless otherwise specified)
25
95 10329
0.71 1.3
1.27
0.152
9.9
0.355
10
2.5
24
Reflow Soldering
1.2
0.6 0.6
Figure 2. Recommended foot pads (in mm)
Wave Soldering
1.4
0.7 0.7
95 10330
1.2
2.4
95 10331
1.4
2.8
Figure 1. Board for R
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85566
definition (in mm)
thJA
Figure 3. Recommended foot pads (in mm)
Rev. 3, 01-Apr-992 (5)
Page 3
MCL4148.MCL4448
Vishay Telefunken
1000
LL 4148
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
Tj=25°C
94 9096
0.1
0 0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
1000
LL 4448
100
Scattering Limit
10
2.0
1000
Tj=25°C
100
Scattering Limit
10
R
I – Reverse Current ( nA )
1
110
94 9098
VR – Reverse Voltage ( V )
Figure 6. Reverse Current vs. Reverse Voltage
3.0
2.5
2.0
1.5
f=1 MHz
T
=25°C
j
100
1
F
I – Forward Current ( mA )
Tj=25°C
94 9097
0.1
0 0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
2.0
1.0
D
C – Diode Capacitance ( pF )
0.5
94 9099
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 7. Diode Capacitance vs. Reverse Voltage
Rev. 3, 01-Apr-99 3 (5)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85566
Page 4
MCL4148.MCL4448
Vishay Telefunken
Dimensions in mm
96 12072
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85566
Rev. 3, 01-Apr-994 (5)
Page 5
MCL4148.MCL4448
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. 3, 01-Apr-99 5 (5)
www.vishay.de • FaxBack +1-408-970-5600Document Number 85566
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