Datasheet MCH6613 Datasheet (SANYO)

Ordering number : ENN6920

MCH6613

N-Channel and P-Channel Silicon MOSFETs

MCH6613

Ultrahigh-Speed Switching Applications

Features

•

The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting.

• Excellent ON-resistance characteristic.

• 2.5V drive.

Package Dimensions

unit : mm

2173A

[MCH6613]

0.3

546

132

2.0

2.1

0.250.25

1.6

0.65

(Bottom view)

0.15

0.07

1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2

0.85

6 : Drain1

Specifications

SANYO : MCPH6

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I Allowable Power Dissipation P Channel T emperature T ch 150 °C Storage T emperature Tstg --55 to +150 °C

DSS GSS

D

PW≤10µs, duty cycle≤1% 1.4 --0.8 A

DP

Mounted on a ceramic board (900mm

D

2

✕0.8mm)1unit

30 --30 V

±10 ±10 V

0.35 --0.2 A

0.8 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions [N-channel]

Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=100µA 0.4 1.3 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω

RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω

=1mA, VGS=0 30 V VDS=30V, VGS=0 10 µA VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=80mA 150 220 mS

min typ max

Marking : FM Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

GI IM

52101 TS IM TA-3241

No.6920-1/6

MCH6613

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 7.0 pF Output Capacitance Coss VDS=10V, f=1MHz 5.9 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 2.3 pF Turn-ON Delay Time td(on) See specified Test Circuit 19 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 155 ns Fall Time t Total Gate Charge Qg VDS=10V, VGS=10V, ID=150mA 1.58 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=150mA 0.26 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=150mA 0.31 nC Diode Forward Voltage V [P-channel] Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V Forward Transfer Admittance

Static Drain-to-Source On-State Resistance RDS(on)2 ID=--30mA, VGS=--2.5V 11 15.4 Ω

Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF Output Capacitance Coss VDS=--10V, f=1MHz 5.7 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 1.8 pF Turn-ON Delay Time td(on) See specified Test Circuit 24 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 120 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--100mA 0.18 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA 0.25 nC Diode Forward Voltage V

SD

(BR)DSSID

DSS GSS

yfs



RDS(on)1 ID=--50mA, VGS=--4V 8 10.4 Ω

RDS(on)3 ID=--1mA, VGS=--1.5V 27 54 Ω

SD

See specified Test Circuit 65 ns

r

See specified Test Circuit 120 ns

f

IS=150mA, VGS=0 0.87 1.2 V

=--1mA, VGS=0 --30 V VDS=--30V, VGS=0 --10 µA VGS=±8V, VDS=0 ±10 µA

VDS=--10V, ID=--50mA 80 110 mS



See specified Test Circuit 55 ns

r

See specified Test Circuit 130 ns

f

IS=--100mA, VGS=0 --0.83 --1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

[N-channel] [P-channel]

VDD=15V

V

IN

4V 0V

PW=10µs D.C.≤1%

P.G

ID=80mA RL=187.5Ω

S

V

OUT

MCH6613

V

IN

G

50Ω

D

V

IN

0V

--4V

PW=10µs D.C.≤1%

P.G

Electrical Connection

D1 G2 S2

(Top view)

VDD= --15V

ID= --50mA RL=300Ω

S

V

OUT

MCH6613

V

IN

G

50Ω

D

S1 G1 D2

No.6920-2/6

0.16

0.14

0.12

-- A

0.10

D

0.08

0.06

Drain Current, I

0.04

0.02

0

0.30

VDS=10V

0.25

0.20

-- A D

0.15

0.10

Drain Current, I

0.05

0

10

9

8

7

(on) -- Ω

DS

6

5

4

ID=40mA

3

I

-- V

D

3.5V

4.0V

DS

2.5V

3.0V

6.0V

0.2

0.4

0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, VDS -- V

I

-- V

D

GS

Ta= --25°C

0.5 1.0 1.5 2.0

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

GS

80mA

2.0V

VGS=1.5V

75°C

2.5 3.0

Ta=25°C

MCH6613

[Nch]

IT00029

[Nch]

25°C

IT00030

[Nch]

--0.10

--0.09

--0.08

--0.07

-- A D

--0.06

--0.05

--0.04

--0.03

Drain Current, I

--0.02

--0.01 0

0

--3.5V

--6.0V

--0.4

D

--4.0V

--0.8 --1.2 --1.6 --2.0--0.2 - -0.6 --1.0 - -1.4 --1.8

--3.0V

DS

--2.5V

I

-- V

Drain-to-Source V oltage, VDS -- V

I

-- V

D

--0.20

VDS= --10V

--0.18

--0.16

--0.14

-- A D

--0.12

--0.10

--0.08

--0.06

Drain Current, I

--0.04

--0.02 0

0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5

GS

Ta= --25°C

75

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

25

(on) -- Ω

20

GS

DS

15

ID= --30mA

--50mA

°C

[Pch]

--2.0V

VGS= --1.5V

IT00077

[Pch]

25

°C

IT00078

[Pch]

Ta=25

°C

Static Drain-to-Source

On-State Resistance, R

0012134256

Gate-to-Source V oltage, VGS -- V

10

7

5

(on) -- Ω

RDS(on) -- I

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.01 0.1

23 57 23 5

Drain Current, ID -- A

D

Ta=75°C

25°C

--25°C

78910

IT00031

[Nch]

VGS=4V

IT00032

Static Drain-to-Source

On-State Resistance, R

00--1 --2 --35--410--5

100

7 5

3

(on) -- Ω

2

DS

10

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

Gate-to-Source V oltage, VGS -- V

--630--7 --8 --9 --10

RDS(on) -- I

D

IT00079

[Pch]

VGS= --4V

Ta=75°C

--25°C

23 57 23

Drain Current, ID -- A

25°C

--0.1

IT00080

No.6920-3/6

10

7

5

(on) -- Ω

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1.0

0.01 0.1

23 57 23 5

Drain Current, ID -- A

100

7 5

3

(on) -- Ω

2

DS

10

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

1.0

0.001 0.01

23 57 23 5

Drain Current, ID -- A

7

RDS(on) -- Ta

RDS(on) -- I

Ta=75°C

25°C

--25°C

RDS(on) -- I

Ta=75°C

--25°C

D

25°C

MCH6613

[Nch]

VGS=2.5V

IT00033

[Nch]

VGS=1.5V

IT00034

[Nch]

100

7 5

3

(on) -- Ω

2

DS

10

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

1.0

--0.01

RDS(on) -- I

Ta=75°C

25°C

--25°C

Drain Current, ID -- A

1000

7 5

3

(on) -- Ω

2

DS

100

7 5

3 2

Static Drain-to-Source

On-State Resistance, R

10

--0.0001 --0.001

RDS(on) -- I

Ta=75°C

--25°C

Drain Current, ID -- A

RDS(on) -- Ta

25°C

D

--0.1

D

[Pch]

VGS= --2.5V

327532

IT00081

[Pch]

VGS= --1.5V

2323 57

IT00082

[Pch]

6

5

(on) -- Ω

DS

4

3

Static Drain-to-Source

On-State Resistance, R

--600--40 --201020240 60

I

Ambient Temperature, Ta -- °C

1.0 7 5

3 2

0.1 7 5

3 2

Ta= --25°C

Forward Transfer Admittance, yfs -- S

0.01

0.01 0.1

23 57 23 5

GS

=40mA, V

D

=80mA, V

I

D

yfs -- I

75°C

Drain Current, I

=2.5V

=4.0V

GS

80 100 120 140 160

D

VDS=10V

25°C

-- A

D

IT00035

[Nch]

IT00036

14

(on) -- Ω

12

DS

10

8

4

Static Drain-to-Source

On-State Resistance, R

2

--60

--406--20

1.0 7

5

3 2

0.1 7

5

3 2

Forward Transfer Admittance, yfs -- S

0.01

--0.01

= --2.5V

GS

= --30mA, V

I

D

= --50mA, V

I

D

0

20 4016601880 100 120 140 160

= --4.0V

GS

Ambient Temperature, Ta -- °C

yfs -- I

D

Ta= --25°C

75°C

Drain Current, I

D

--0.1

-- A

IT00083

[Pch]

VDS= --10V

25°C

327532

IT00084

No.6920-4/6

1.0 7 5

3

-- A

2

F

0.1 7 5

3

Forward Current, I

2

0.01

1000

7 5

MCH6613

I

-- V

F

SD

Ta=75°C

25°C

--25°C

0.60.5 0.80.7 0.9 1.0 1.1 1.2

Diode Forward V oltage, V

SW Time -- I

SD

D

-- V

[Nch]

VGS=0

IT00037

[Nch]

VDD=15V VGS=4V

I

-- V

F

--25°C

SD

D

-- V

VDD= --15V VGS= --4V

5

3

2

-- A F

--0.1 7 5

3

Forward Current, I

2

--0.01

--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1

Ta=75°C

25°C

Diode Forward V oltage, V

1000

7 5

SW Time -- I

V

GS

IT00085

[Pch]

= 0

[Pch]

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

100

3 2

7 5

3 2

10

0.01

7 5

3 2

10

7 5

3 2

t

(off)

d

t

f

t

r

td(on)

23 57 2

Drain Current, I

D

Ciss, Coss, Crss -- V

-- A

0.1

DS

IT00038

[Nch]

f=1MHz

Ciss

Coss

Crss

Switching Time, SW Time -- ns

Ciss, Coss, Crss -- pF

100

10

3 2

7 5

3 2

--0.01

7 5

3 2

7 5

3 2

t

(off)

d

f

23 57

Drain Current, I

Ciss, Coss, Crss -- V

t

r

td(on)

D

-- A

DS

f=1MHz

Ciss Coss

Crss

--0.1

IT00086

[Pch]

1.0 02468101214161820

10

VDS=10V

9

ID=150mA

8

-- V

7

GS

6

5

4 3

2

Gate-to-Source V oltage, V

1 0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Drain-to-Source V oltage, V

VGS -- Qg

DS

-- V

Total Gate Charge, Qg -- nC

IT00039

[Nch]

IT00040

1.0 0

--10

--9

--8

-- V

--7

GS

--6

--5

--4

--3

--2

Gate-to-Source V oltage, V

--1 0

0

--5

Drain-to-Source V oltage, V

VDS= --10V ID= --100mA

--10 --15

--20 --30--25

DS

VGS -- Qg

Total Gate Charge, Qg -- nC

-- V

IT00087

[Pch]

1.60.6 0.8 1.0 1.2 1.40.2 0.4

IT00088

No.6920-5/6

3 2

I

=1.4A

DP

1.0 7

5

-- A

I

=0.35A

D

3 2

Operation in

0.1

this area is

7

limited by RDS(on).

5

Drain Current, I

3

Ta=25°C

2

Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit

0.01

1.0

23 57 23 5

A S O

100ms

DC operation

10

Drain-to-Source V oltage, V

P

-- Ta

1.0

-- W

0.8

D

0.6

Mounted on a ceramic board(900mm

D

10ms

DS

100µs

1ms

-- V

[Nch]

IT02877

[Pch, Nch]

MCH6613

--1.0 7

IDP= --0.8A

5

3

-- A

Drain Current, I

ID= --0.2A

2

D

--0.1 7

Operation in this

5

area is limited by RDS(on).

3

Ta=25°C

2

Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit

--0.01

--1.0 --10

23 5 5723

A S O

DC operation

Drain-to-Source V oltage, V

100ms

10ms

DS

1ms

-- V

[Pch]

100µs

IT02878

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 100 120 140

80

Ambient Temperature, Ta -- °C

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

2

✕0.8mm)1unit

160

IT02879

This catalog provides information as of May, 2001. Specifications and information herein are subject to change without notice.

No.6920-6/6

PS