Page 1
Ordering number : ENN7077
Preliminary
MCH6611
P-Channel Silicon MOSFET
MCH6611
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Composite type with 2 MOSFETs contained in a single
package, facilitating high-density mounting.
Package Dimensions
unit : mm
2173A
[MCH6611]
0.3
546
1
0.07
2.0
2.1
0.250.25
1.6
32
0.65
0.15
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
0.85
123
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --1.1 A
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--50 V
±20 V
--0.28 A
0.8 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA--1--2.5V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--70mA, VGS=--10V 4.7 6.1 Ω
RDS(on)2 ID=--40mA, VGS=--4V 6.5 9.1 Ω
=--1mA, VGS=0 --50 V
VDS=--50V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--70mA 120 160 mS
Marking : FK Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1501 TS IM TA-2466
No.7077-1/4
Page 2
MCH6611
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 23 pF
Output Capacitance Coss VDS=--10V, f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 4 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--140mA 1.68 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--140mA 0.22 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--140mA 0.43 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 10 ns
r
See specified Test Circuit. 95 ns
f
IS=--140mA, VGS=0 0.83 1.2 V
Switching Time Test Circuit Electrical Connection
0V
--10V
PW=10µs
D.C.≤1%
V
IN
V
IN
G
VDD= --25V
ID= --70mA
RL=357Ω
D
V
D1 G2 S2
OUT
S1 D2G1
Ratings
min typ max
Unit
P.G
--0.14
--0.12
--0.1
-- A
D
--0.08
--0.06
--0.04
Drain Current, I
--0.02
0
0
10
50Ω
ID -- V
--8.0V
--10.0V
--0.4
--6.0V
--4.0V
--1.0
--0.8
Drain-to-Source V oltage, V
RDS(on) -- V
MCH6611
S
DS
VGS= --2.5V
--1.2 --1.6
--1.4
-- V
DS
GS
I
-- V
--3.0V
-- A
D
--0.30
--0.25
--0.20
--0.15
--0.10
D
GS
Ta= --25°C
VDS= --10V
75°C
Drain Current, I
--0.05
--1.8
--2.0--0.2 --0.6
IT00262 IT00263
Ta=25°C
0
0
10
7
--1
--2
Gate-to-Source V oltage, V
RDS(on) -- I
Ta=75°C
GS
D
--4--3 --5
-- V
VGS= --10V
25°C
(on) -- Ω
DS
= --40mA
I
D
5
4
Static Drain-to-Source
On-State Resistance, R
3
2
--26--37--48--59--6
--70mA
--7 --8 --9 --10
Gate-to-Source V oltage, V
GS
5
(on) -- Ω
25°C
DS
--25°C
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
-- V
IT00264 IT00265
--0.01
23 57 23 5
Drain Current, I
--0.1
D
-- A
No.7077-2/4
Page 3
MCH6611
100
7
5
3
(on) -- Ω
2
DS
10
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
1.0
--0.01
1.0
7
5
fs -- S
y
3
2
0.1
7
5
3
2
25°C
23 57 23 5
Forward Transfer Admittance,
0.01
--0.01
1000
7
5
3
2
100
7
5
3
2
10
7
5
Switching Time, SW Time -- ns
3
2
1.0
0.01
--
--
10
--
9
--
8
-- V
--
7
GS
--
6
--
5
--
4
--
3
--
2
Gate-to-Source V oltage, V
--
1
--
0
0
2
VDS= --10V
ID= --140mA
0.4
0.2
RDS(on) -- I
Ta=75°C
--25°C
Drain Current, I
yfs -- I
--0.1
D
D
Ta= --25°C
75°C
25°C
357
Drain Current, I
--0.1
D
SW Time -- I
t
(off)
d
t
f
td(on)
t
r
23
Drain Current, I
57 2 3
D
VGS -- Qg
1.0
0.8
0.6
Total Gate Charge, Qg -- nC
1.2
D
VGS= --4V
-- A
VDS= --10V
3
2
-- A
D
VDD= --25V
VGS= --10V
--
0.1
-- A
1.4 1.6 1.8 2.0
12
10
(on) -- Ω
8
DS
6
4
2
Static Drain-to-Source
On-State Resistance, R
0
--60
--40
IT00266
--1.0
7
5
3
-- A
2
F
--0.1
7
5
Forward Current, I
3
2
5
IT00268
IT00270 IT00271
--0.01
Ciss, Coss, Crss -- pF
-- A
D
100
1.0
--1.0
7
5
3
2
10
7
5
3
2
--
2
7
5
3
2
--20 0 20 40 60
0
--
5
I
= --1.1A
DP
I
= --0.28A
D
RDS(on) -- Ta
= --4V
GS
= --40mA, V
I
D
= --70mA, V
I
D
= --10V
GS
80 100 120 140 160
Ambient Temperature, Ta -- °C
I
-- V
F
SD
25°C
Ta=75°C
--25°C
--0.6 --0.8 --1.0 --1.2 --1.4--0.2 --0.4
Diode Forward V oltage, V
SD
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--10--
15
--
Drain-to-Source V oltage, V
20
--30--35--40--
--
25
DS
A S O
100ms
-- V
DS
-- V
10ms
IT00267
VGS=0
IT00269
f=1MHz
45
<10µs
1ms
DC operation
--0.1
7
Operation in this
area is limited by RDS(on).
5
Drain Current, I
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
IT00272
--0.01
--1.0
23 57 23 57
Drain-to-Source V oltage, V
--10
DS
-- V
IT03643
No.7077-3/4
--
50
Page 4
1.0
-- W
0.8
D
0.6
0.4
0.2
Allowable Power Dissipation, P
P
-- Ta
D
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
MCH6611
0020 40 60
Ambient Temperature, Ta -- °C
80 100 120
140 160
IT03637
Note on usage : Since the MCH6611 is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2001. Specifications and information herein are subject
to change without notice.
No.7077-4/4
PS
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