Datasheet MCH5801 Datasheet (SANYO)

Ordering number : ENN6941

MCH5801

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

MCH5801

DC / DC Converter Applications

Features

•

Composite type with an N-Channel Sillicon MOSFET
(MCH3405) and a Schottky Barrier Diode (SBS007M)
contained in one package facilitating high-density
mounting.

[MOSFET]

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 1.8V drive.

[SBD]

• Short reverse recovery time

• Low forward voltage

.

.

Package Dimensions

unit : mm

2195

[MCH5801]

2.0

0.3

5

132

0.07

0.85

2.1

0.250.25

4

1.6

0.65

0.15

54

123

1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain

SANYO : MCPH5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[MOSFET]
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature Tstg --55 to +125 °C

Marking : QA

DSS
GSS

D

DP

D

RRM
RSM

O

FSM

PW≤10µs, duty cycle≤1% 6 A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit

50Hz sine wave, 1 cycle 10 A

20 V

±10 V

1.5 A

0.8 W

15 V
15 V

0.5 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62501 TS IM TA-3100

No.6941-1/5

MCH5801

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

[MOSFET]
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance Ciss VDS=10V , f=1MHz 100 pF
Output Capacitance Coss VDS=10V , f=1MHz 22 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6.5 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 19 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.5A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.5A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.5A 0.4 nC
Diode Forward Voltage V
[SBD]
Reverse Voltage V

Forward Voltage
Reverse Current I

Interterminal Capacitance C VR=10V, f=1MHz, 1 cycle 20 pF
Reverse Recovery Time t

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=4V 160 210 mΩ
RDS(on)2 ID=0.5A, VGS=2.5V 200 280 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 280 390 mΩ

r

f

SD

R

VF1I
VF2I

R

rr

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1A 1.9 2.8 S

See specified Test Circuit 28 ns

See specified Test Circuit 13 ns

IS=1.5A, VGS=0 0.9 1.2 V

IR=0.5mA 15 V

=0.3A 0.35 0.40 V

F

=0.5A 0.40 0.45 V

F

VR=6V 200 µA

IF=IR=100mA, See specified Test Circuit. 10 ns

Ratings

min typ max

Unit

Electrical Connection (Top view)

54

1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain

123

Switching Time Test Circuit trr Test Circuit

[MOSFET] [SBD]

4V
0V

PW=10µs
D.C.≤1%

P.G

G

50Ω

VDD=10V

ID=1A
RL=10Ω

D

S

V

OUT

MCH5801

V

IN

V

IN

Duty≤10%

50Ω 100Ω 10Ω

10µs

--5V

100mA100mA

10mA

t

rr

No.6941-2/5

2.0

1.6

-- A
D

1.2

6.0V

0.8

10.0V

Drain Current, I

0.4

0

0

400

350

I

-- V

D

3.0V

2.5V

1.8V

4.0V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

R

(on) -- V

DS

1.5V

DS

DS

GS

MCH5801

I

[MOSFET] [MOSFET]

V

=1.0V

GS

-- V

IT02901

[MOSFET] [MOSFET]

Ta=25°C

2.0

VDS=10V

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Gate-to-Source V oltage, V

400

350

-- V

D

GS

25°C

--

Ta=75°C

25°C

RDS(on) -- Ta

GS

Ta= --25°C

-- V

75°C

25°C

IT02902

300

(on) -- mΩ

250

DS

ID=0.5A

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

0246810

10

7
5

3

fs -- S

2

y

1.0
7
5

3
2

0.1
7
5

3
2

Forward Transfer Admittance, 

0.01

0.001 0.01

100

VDD=10V

7

VGS=4V

5

3
2

1.0A

Gate-to-Source V oltage, V

yfs -- I

Ta= --25°C

23 57

23 57

Drain Current, I

SW Time -- I

t

(off)

d

25°C

75°C

-- V

GS

D

23 57 23 5

0.1

D

-- A

1.0

D

r

t

[MOSFET] [MOSFET]
VDS=10V

[MOSFET] [MOSFET]

IT02903

IT02905

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

=0.5A, V

I

D

=1.0A, V

I

D

GS

=2.5V

GS

=4.0V

Ambient Temperature, Ta -- °C

I

-- V

F

25°C

SD

--25°C

SD

DS

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Ta=75°C

Diode Forward V oltage, V

1000

Ciss, Coss, Crss -- V

7
5

3
2

-- V

IT02904

VGS=0

IT02906

f=1MHz

10

7
5

3

Switching Time, SW Time -- ns

2

1.0

0.1 1.0

t

f

23 57 23 5

Drain Current, I

td(on)

D

-- A

IT02907

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

02468101214161820

Drain-to-Source V oltage, V

Ciss

Coss

Crss

DS

-- V

No.6941-3/5

IT02908

10

VDS=10V

9

ID=1.8A

8

-- V

7

GS

6

5

4

3

2

Gate-to-Source V oltage, V

1
0

012345

VGS -- Qg

Total Gate Charge, Qg -- nC

P

-- Ta

1.0

-- W
D

0.8

0.6

Mounted on a ceramic board(900mm

D

[MOSFET] [MOSFET]

IT02909

[MOSFET]

MCH5801

10

I

=6.0A

DP

7
5

3
2

I

=1.5A

D

1.0

-- A

7

D

5
3

2

0.1
7

Drain Current, I

5
3

2

0.01

Operation in this
area is limited by RDS(on).

Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm) 1unit

23 57 23 571023 5

0.1

A S O

23 57

DC operation

1.00.01

Drain-to-Source V oltage, V

100ms

DS

10ms

-- V

1ms

<10µs

100

IT02910

µs

0.4

0.2

Allowable Power Dissipation, P

0020 40

2

1.0
7
5

-- A
F

3
2

0.1
7
5

Forward Current, I

3
2

0.01
0 0.3 0.4 0.50.1 0.2

0.4

-- W

(1) Rectangular wave θ=60°
(2) Rectangular wave θ=120°

0.35

(AV)

(3) Rectangular wave θ=180°

F

(4) Sine wave θ=180°

0.3

0.25

2

✕0.8mm) 1unit

60 80 100 120 140 160

Ambient Temperature, Ta -- °C

I

-- V

F

F

100°C

75°C

Ta=125°C

50°C

25°C

Forward Voltage, V

PF(AV) -- I

(1)

F

O

(2)

-- V

(4)

IT02911

I

[SBD] [SBD]

IT02912

[SBD] [SBD]

(3)

100

7
5

3
2

10

7
5

3
2

-- mA
R

1.0
7
5

3
2

0.1
7
5

3
2

Reverse Current, I

0.01
7
5

3
2

0.001
0

100

7
5

-- pF

3
2

Reverse Voltage, V

-- V

R

Ta=125°C

100°C

75°C

50°C

25°C

C -- V

R

-- V

R

R

15510

IT02913

f=1MHz

0.2

0.15

0.1

0.05

0

0

Average Forward Power Dissipation, P

0.1 0.2 0.3 0.4

Sine wave

180°

Average Forward Current, I

Rectangular wave

q

360°

360°

0.5 0.6 0.7

IT02914 IT02915

-- A

O

10

7
5

3
2

Interterminal Capacitance, C

1.0

1.0 10

23 57 23

Reverse Voltage, VR -- V

No.6941-4/5

12

-- A

10

(Peak)

8

FSM

6

4

2

Surge Forward Current, I

0

7

0.01

I

-- t

S

Current waveform 50Hz sine wave

I

23 7

52 237

0.1

Time, t -- s

MCH5801

[SBD]

S

20ms

t

5

1.0

3

IT00636

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.

No.6941-5/5

PS