Datasheet MCH3406 Datasheet (SANYO)

Ordering number : ENN7010

MCH3406

N-Channel Silicon MOSFET

MCH3406

Ultrahigh-Speed Switching Applications

Features

•

Low ON-state resistance.

• Ultrahigh-speed switching.

•

1.8V drive.

Package Dimensions

unit : mm

2167A

[MCH3406]

0.65

2.0

0.3

3

12

0.07

2.1

0.250.25

1.6

0.15

3

1 : Gate
2 : Source
3 : Drain

Specifications

0.85

12

SANYO : MCPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W

20 V

±10 V

3A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=4V 48 63 mΩ
RDS(on)2 ID=1A, VGS=2.5V 58 82 mΩ
RDS(on)3 ID=0.5A, VGS=1.8V 72 110 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µ A
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 3.9 5.6 S

Marking : KF Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71801 TS IM TA-3097

No.7010-1/4

MCH3406

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 280 pF
Output Capacitance Coss VDS=10V , f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 38 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 35 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC
Diode Forward Voltage V

SD

See specified Test Circuit 35 ns

r

See specified Test Circuit 25 ns

f

IS=3A, VGS=0 0.82 1.2 V

Switching Time Test Circuit

V
4V
0V

PW=10µs
D.C .≤1%

IN

V

IN

VDD=10V

ID=1.5A
RL=6.67Ω

D

G

V

OUT

Ratings

min typ max

Unit

MCH3406

S

3.0

2.5

2.5V

P.G

1.8V

1.5V

I

D

50Ω

-- V

DS

4.0V

-- A

2.0

D

10.0V

1.5

1.0

V

GS

Drain Current, I

0.5

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, V

160

140

120

(on) -- mΩ

100

DS

80

I

=0.5A

D

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

0246810

RDS(on) -- V

1.0A

1.5A

Gate-to-Source V oltage, V

DS

GS

GS

-- V

Ta=25°C

-- V

=1.0V

IT03490

IT03492

I

-- V

4.0

VDS=10V

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

D

Gate-to-Source V oltage, V

140

120

100

(on) -- mΩ

DS

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=0.5A, V

I

D

=1.0A, V

I

D

=1.5A, V

I

D

Ta=75°C

GS

GS

GS

- -25°C

25°C

=1.8V

GS

GS

=2.5V

=4.0V

Ambient Temperature, Ta -- °C

-- V

No.7010-2/4

IT03491

IT03493

y

fs -- I

Forward Transfer Admittance, yfs -- S

Switching Time, SW Time -- ns

-- V

3

VDS=10V

2

10

7
5

3
2

1.0
7
5

3
2

0.1

23 57 23 57



Ta= --25

0.1

23 57

Drain Current, I

SW Time -- I

t

(off)

d

100

1.0

3
2

7
5

3
2

10

7
5

3
2

23 57

0.1

Drain Current, I

4.0

VDS=10V
ID=3A

3.5

3.0

VGS -- Qg

°C

25°C

1.0

D

°C

75

D

td(on)

D

-- A

-- A

1.00.01

D

VDD=10V
VGS=

t

r

t

f

23 57

GS

2.5

2.0

1.5

1.0

Gate-to-Source V oltage, V

0.5

0

012345678910

Total Gate Charge, Qg -- nC

P

-- Ta

1.2

D

MCH3406

10

IT03494

4V

10

IT03496

IT03498

I

-- V

F

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

0.01

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Ta=75°C

Diode Forward V oltage, V

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

02468101214161820

Ciss, Coss, Crss -- V

Drain-to-Source V oltage, V

3
2

I

=12A

DP

10

7
5

I

=3A

D

3
2

-- A
D

1.0
7
5

3
2

Operation in this

0.1

Drain Current, I

area is limited by RDS(on).

7
5

3

Ta=25°C

2

Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)

0.01

0.01

23 57

0.1

23 57

Drain-to-Source V oltage, V

SD

25°C

--25°C

Ciss

Coss

Crss

A S O

DC operation

1.0 10

-- V

SD

DS

<10µs

10ms

100ms

23 57

-- V

DS

DS

-- V

1ms

VGS=0

IT03495

f=1MHz

IT03497

µ

s

100

23 57

IT03499

1.0

-- W

Mounted on a ceramic board(900mm

D

0.8

0.6

0.4

0.2

2

✕0.8mm)

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT03500

No.7010-3/4

MCH3406

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2001. Specifications and information herein are subject
to change without notice.

No.7010-4/4

PS