Datasheet MCH3206 Datasheet (SANYO)

Ordering number : ENN7130

0.3

MCH3206

NPN Silicon Epitaxial Planar Transistor

MCH3206

DC / DC Converter Applications

Applications

•

Relay drivers, lamp drivers, motor drivers, strobes.

Package Dimensions

unit : mm

2194A

Features

•

Adoption of MBIT processes.

•

High current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High speed switching.

•

Ultrasmall package facilitates miniaturization in end
products (0.85mm).

•

High allowable power dissipation.

Specifications

2.1

0.250.25

1.6

0.65

2.0

(Bottom view)

3

[MCH3206]

12

0.07

0.85

0.15

3

12

(Top view)

1 : Base
2 : Emitter
3 : Collector

SANYO : MCPH3

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C

CBO
CEO
EBO

C

CP

B

C

Mounted on a ceramic board(600mm2✕0.8mm) 0.8 W

15 V
15 V

5V
3A
5A

600 mA

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 13 pF

CBO
EBO

FE

VCB=12V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=500mA 200 560
VCE=2V, IC=500mA 380 MHz

T

min typ max

Marking : CF Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3001 TS IM TA-3369

No.7130-1/4

MCH3206

Continued from preceding page.

Parameter Symbol Conditions

Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage VBE(sat) IC=1.5A, IB=30mA 0.85 1.2 V

Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t

VCE(sat)1 IC=1.5A, IB=30mA 100 150 mV
VCE(sat)2 IC=3A, IB=60mA 180 270 mV

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

f

=10µA, IE=0 15 V
=1mA, RBE=∞ 15 V

=10µA, IC=0 5 V
See specified Test Circuit. 30 ns
See specified Test Circuit. 210 ns
See specified Test Circuit. 11 ns

min typ max

Switching Time Test Circuit

I

PW=20µs
DC≤1%

B1

I

B2

OUTPUT

Ratings

Unit

INPUT

50Ω

V

R

1kΩ

+

220µF 470µF

IC=20IB1= --20IB2=1.5A

5

4

-- A
C

3

2

Collector Current, I

1

0

0

0.2 0.4 0.6 0.8

60mA

C

40mA

CE

1mA

=0

I

B

I

-- V

Collector-to-Emitter Voltage, VCE -- V

6.0

VCE=2V

5.5

5.0

4.5

-- A

4.0

C

3.5

3.0

2.5

2.0

1.5

Collector Current, I

1.0

0.5
0

0 0.2 0.4 0.6 0.8 1.0

IC -- V

BE

°C

Ta=75

Base-to-Emitter V oltage, VBE -- V

25

R

L

+

VCC=5VVBE= --5V

I

-- V

C

25mA

25mA

20mA

15mA

-- A
C

5

40mA

4

3

10mA

2

5mA

Collector Current, I

1

2mA

0

1.0

IT03982

°C

°C

--25

IT03984

0

1000

7

5

FE

3

2

DC Current Gain, h

100

0.01

2468

Collector-to-Emitter Voltage, VCE -- V

h

Ta=75°C

23 57 23 57 23 57

0.1 1.0 10

Collector Current, IC -- A

FE

25

--25

-- I

°C

°C

CE

C

20mA

15mA

10mA

5mA

1mA

=0

I

B

2mA

10

IT03983

VCE=2V

IT03985

No.7130-2/4

5

3
2

100

(sat) -- mV

7

CE

5

3
2

10

7

Collector-to-Emitter

Saturation V oltage, V

5
3

0.01

10

7
5

IC / IB=20

23 57

VCE(sat) -- I

23 57

0.1

Ta=75°C

--25°C

C

1.0

Collector Current, IC -- A

VBE(sat) -- I

C

°C

25

23 57

IC / IB=50

MCH3206

10

IT03986

5

3
2

(sat) -- mV

100

CE

7
5

3

2

Collector-to-Emitter

Saturation V oltage, V

10

7

0.01

100

7

IC / IB=50

23 57

VCE(sat) -- I

Ta=75°C

C

25

--25°C

23 57

0.1

1.0

Collector Current, IC -- A

Cob -- V

CB

°C

23 57

10

IT03987

f=1MHz

3

(sat) -- V

2

BE

1.0
7
5

3

Base-to-Emitter

Saturation V oltage, V

2

0.1

23 57

0.01

1000

7

5

-- MHz
T

3

2

100

7

5

Gain-Bandwidth Product, f

3

1.0

7

0.01

23 57

Ta= --25°C

0.1

75°C

23 57

°C

25

1.0

Collector Current, IC -- A

fT -- I

C

23 57 23 5

0.1

Collector Current, IC -- A

PC -- Ta

23 57

IT03988

VCE=2V

1.0

IT03990

5

3

2

Output Capacitance, Cob -- pF

10

10

1.0

10

7
5

3
2

-- A

1.0

C

7
5

3
2

0.1
7

Collector Current, I

5
3

2

0.01

0.1 1.0

23 57

10

23 5

Collector-to-Base Voltage, VCB -- V

A S O

ICP=5A 100

IC=3A

100ms

DC operation

Ta=25°C
Single pulse
Mounted on a ceramic board (600mm

3752

375232

Collector-to-Emitter Voltage, VCE -- V

500µs

1ms

10ms

2

✕0.8mm)

10

IT03989

µs

IT03991

0.8

-- W
C

0.6

0.4

0.2

Collector Dissipation, P

0

0

Mounted on a ceramic board (600mm

50 100 150 200

Ambient Temperature, Ta -- °C

2

✕0.8mm)

IT03992

No.7130-3/4

MCH3206

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

No.7130-4/4

PS