Datasheet MCD225-18IO1, MCD225-14IO1, MCC225-18IO1, MCC225-14IO1, MCC225-12IO1 Datasheet (IXYS)

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Page 1
MCC 225 MCD 225
Thyristor Modules Thyristor/Diode Modules
V
RSM
V
DSM
VV
1300 1200 MCC 225-12io1 MCD 225-12io1 1500 1400 MCC 225-14io1 MCD 225-14io1 1700 1600 MCC 225-16io1 MCD 225-16io1 1900 1800 MCC 225-18io1 MCD 225-18io1
TRMS
I
TAVM
, I
I
TSM
2
dt TVJ = 45°C t = 10 ms (50 Hz) 320 000 A2s
òi
(di/dt)
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws 750 g
FSM
V
RRM
V
DRM
Type
TVJ = T
VJM
TC = 85°C; 180° sine 221 A
400 A
TVJ = 45°C; t = 10 ms (50 Hz) 8000 A VR = 0 t = 8.3 ms (60 Hz) 8500 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 7700 A
t = 10 ms (50 Hz) 7000 A
VR = 0 t = 8.3 ms (60 Hz) 300 000 A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 246 000 A2s
cr
TVJ = T
VJM
f =50 Hz, tP =200 ms VD = 2/3 V IG = 1 A, non repetitive, IT = I
DRM
diG/dt = 1 A/ms TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise) TVJ = T
= I
I
T
; VDR = 2/3 V
VJM
VJM
TAVM
t = 10 ms (50 Hz) 245 000 A2s
repetitive, IT = 750 A 100 A/ms
TAVM
DRM
500 A/ms
1000 V/ms
tP = 30 ms 120 W tP = 500 ms60W
20 W 10 V
-40...+130 °C 130 °C
-40...+125 °C
50/60 Hz, RMS t = 1 min 3000 V~
£ 1 mA t = 1 s 3600 V~
I
ISOL
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in. Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
I
TRMS
I
TAVM
V
= 2x 400 A = 2x 221 A = 1200-1800 V
RRM
2
1
3671542
3
7
6
MCC
31542
MCD
Features
International standard package
Direct copper bonded Al2O3-ceramic with copper base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered E 72873
Keyed gate/cathode twin pins
Applications
Motor control, softstarter
Power converter
Heat and temperature control for industrial furnaces and chemical processes
Lighting control
Solid state switches
Advantages
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
5
4
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
Page 2
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
, V
V
T
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
40 mA IT, IF = 600 A; TVJ = 25°C 1.40 V For power-loss calculations only (TVJ = 130°C) 0.8 V
0.76 mW
VD = 6 V; TVJ = 25°C2V
TVJ = -40°C3V
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
TVJ = T TVJ = T
;V
VJM
;V
VJM
D D
= 2/3 V = 2/3 V
DRM DRM
0.25 V 10 mA
TVJ = 25°C; tP = 30 ms; VD = 6 V 200 mA IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA TVJ = 25°C; VD = 1/2 V
IG = 1 A; diG/dt = 1 A/ms TVJ = T
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 V
; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. 200 ms
VJM
DRM
DRM
2 ms
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms 550 mC
235 A
per thyristor (diode); DC current 0.157 K/W per module other values 0.08 K/W per thyristor (diode); DC current see Fig. 8/9 0.197 K/W per module 0.1 K/W
Creeping distance on surface 12.7 mm Creepage distance in air 9.6 mm
10
10
1: IGT, T
1: IGT, T 2: I
2: I
V
V
3: I
3: I
V
V
G
G
1
1
0.1
0.1
-3
-3
10
10
GT
GT GT
GT
IGD, T
IGD, T
, T
, T , T
, T
VJ
VJ
10
10
= 140°C
= 130°C
VJ
VJ
= 25°C
= 25°C
VJ
VJ
= -40°C
= -40°C
VJ
VJ
1
1
= 140°C
= 130°C
-2
-2
2
2
-1
-1
10
10
Fig. 1 Gate trigger characteristics
100
100
µs
µs
t
t
gd
gd
typ.
typ.
10
10
2
Limit
Limit
MCC 225 MCD 225
3
3
4: P
= 20 W
4: P
= 20 W
GM
GM
5: P
5: P
= 60 W
= 60 W
GM
GM
6: P
6: P
= 120 W
= 120 W
GM
GM
0
0
10
10
10
10
I
I
G
G
T
T
VJ
VJ
5
5
4
4
1
1
A
A
= 25°C
= 25°C
6
6
2
2
10
10
Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394") MCC MCD
M8x20
M8x20
1
1
0.01 0.1 1 10
0.01 0.1 1 10 I
I
G
G
Fig. 2 Gate trigger delay time
A
A
© 2000 IXYS All rights reserved
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Page 3
MCC 225 MCD 225
8000
I
TSM
A
6000
4000
2000
0
0.001 0.01 0.1 1
50 Hz
80 % V TVJ = 45°C
T
Fig. 3 Surge overload current
I
, I
: Crest value, t: duration
TSM
FSM
400
P
tot
W
300
200
100
= 130°C
VJ
RRM
s
DC 180° sin 120° 60° 30°
I2dt
10
A2s
10
6
TVJ = 45°C
5
TVJ = 130°C
I
TAVM
I
FAVM
400
300
200
A
DC 180° sin 120° 60° 30°
100
4
10
t
110
ms
t
0
0 25 50 75 100 125 150
°C
T
C
Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
R
0.1
0.2
0.3
0.4
0.6
0.8
1.0
thKA
K/W
Fig. 5 Power dissipation versus on-
state current and ambient temperature (per thyristor or diode)
P
2000
tot
1500
1000
500
0
I
TAVM/IFAVM
W
0 2550751001251500 100 200 300
C
T
A
R
thKA
0.03
0.05
0.08
K/W
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct output current and ambient temperature
0.1
0.15
0.2
0.3
Circuit B6 3xMCC225 3xMCD225
0
I
A
dAVM
0 25 50 75 100 125 1500 200 400 600
°C
T
A
© 2000 IXYS All rights reserved
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Page 4
MCC 225 MCD 225
2000
P
tot
W
R
K/W
thKA
0.03
1500
0.05
0.08
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS output current and ambient temperature
0.1
0.15
0.2
1000
Circuit
500
0
0.25
K/W
Z
thJC
0.20
0.15
W3 3xMCC225 or 3xMCD225
I
RMS
0 25 50 75 100 125 1500 100 200 300 400
A
0.3
°C
T
A
Fig. 8 Transient thermal impedance
junction to case (per thyristor or diode)
for various conduction angles d:
R
thJC
d R
thJC
(K/W)
DC 0.157
180° 0.168 120° 0.177
60° 0.200 30° 0.243
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.0076 0.00054 2 0.0406 0.098 3 0.0944 0.54
0.10
0.05
0.00
30° 60° 120° 180° DC
-3
10
-2
10
-1
10
0
10
1
10
s t
2
10
4 0.0147 12
0.30
K/W
0.25
Z
thJK
0.20
0.15 30°
0.10
0.05
0.00
-3
10
-2
10
-1
10
0
10
60° 120° 180° DC
10
1
t
10
s
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor or diode)
for various conduction angles d:
R
thJK
d R
thJK
(K/W)
DC 0.197
180° 0.208 120° 0.217
60° 0.240 30° 0.283
Constants for Z
2
iR
1 0.0076 0.00054
calculation:
thJK
(K/W) ti (s)
thi
2 0.0406 0.098 3 0.0944 0.54 4 0.0147 12 5 0.04 12
© 2000 IXYS All rights reserved
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