Datasheet MCD95-16IO1B, MCD95-16IO8B, MCD95-18IO8B, MCD95-12IO1B, MCD95-12IO8B Datasheet (IXYS)

© 2000 IXYS All rights reserved

1 - 4

I

TRMS

= 2x 180 A

I

TAVM

= 2x 116 A

V

RRM

= 800-1800 V

V

RSMVRRM

Type

V

DSMVDRM

V V Version 1 Version 8

900 800 MCC 95-08io1 B -- MCC 95-08io8 B MCD 95-08io8 B
1300 1200 MCC 95-12io1 B MCD 95-12io1 B MCC 95-12io8 B MCD 95-12io8 B
1500 1400 MCC 95-14io1 B -- MCC 95-14io8 B MCD 95-14io8 B
1700 1600 MCC 95-16io1 B MCD 95-16io1 B MCC 95-16io8 B MCD 95-16io8 B
1900 1800 MCC 95-18io1 B -- MCC 95-18io8 B MCD 95-18io8 B

1500 1400 MCC 95-16io1
1700 1600 MCC 95-18io1

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions

Symbol Test Conditions Maximum Ratings
I

TRMS

, I

FRMS

TVJ = T

VJM

180 A

I

TAVM

, I

FAVM

TC = 85°C; 180° sine 116 A

I

TSM

, I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 2250 A
VR = 0 t = 8.3 ms (60 Hz), sine 2400 A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 2000 A

VR = 0 t = 8.3 ms (60 Hz), sine 2150 A

òi

2

dt TVJ = 45°C t = 10 ms (50 Hz), sine 25 300 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 23 900 A2s
T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 20 000 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 19 100 A2s

(di/dt)

cr

TVJ = T

VJM

repetitive, IT = 250 A 150 A/ms
f =50 Hz, tP =200 ms
VD = 2/3 V

DRM

IG = 0.45 A non repetitive, IT = I

TAVM

500 A/ms

diG/dt = 0.45 A/ms

(dv/dt)

cr

TVJ = T

VJM

;V

DR

= 2/3 V

DRM

1000 V/ms

RGK = ¥; method 1 (linear voltage rise)

P

GM

TVJ = T

VJM

tP = 30 ms10W
I

T

= I

TAVM

tP = 300 ms5W

P

GAV

0.5 W

V

RGM

10 V

T

VJ

-40...+125 °C

T

VJM

125 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz, RMS t = 1 min 3000 V~
I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Weight Typical including screws 90 g

Features

●

International standard package,
JEDEC TO-240 AA

●

Direct copper bonded Al2O3 -ceramic
base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

UL registered, E 72873

●

Gate-cathode twin pins for version 1

Applications

●

DC motor control

●

Softstart AC motor controller

●

Light, heat and temperature control

Advantages

●

Space and weight savings

●

Simple mounting with two screws

●

Improved temperature and power
cycling

●

Reduced protection circuits

MCC 95
MCD 95

Thyristor Modules
Thyristor/Diode Modules

6

7

4

5

3

2

1

TO-240 AA

MCD
Version 8

MCC
Version 8

MCC
Version 1

3671542

36152

3152

31542

MCD
Version 1

032

© 2000 IXYS All rights reserved

2 - 4

Symbol Test Conditions Characteristic Values
I

RRM

, I

DRM

TVJ= T

VJM

; VR = V

RRM

; VD = V

DRM

5mA

V

T

, V

F

IT, IF = 300 A; TVJ = 25°C 1.5 V

V

T0

For power-loss calculations only (TVJ = 125°C) 0.8 V

r

T

2.4 mW

V

GT

VD = 6 V; TVJ = 25°C 2.5 V

TVJ = -40°C 2.6 V

I

GT

VD = 6 V; TVJ = 25°C 150 mA

TVJ = -40°C 200 mA

V

GD

TVJ = T

VJM

;V

D

= 2/3 V

DRM

0.2 V

I

GD

10 mA

I

L

TVJ = 25°C; tP = 10 ms; VD = 6 V 450 mA
IG = 0.45 A; diG/dt = 0.45 A/ms

I

H

TVJ = 25°C; VD = 6 V; RGK = ¥ 200 mA

t

gd

TVJ = 25°C; VD = 1/2 V

DRM

2 ms

IG = 0.45 A; diG/dt = 0.45 A/ms

t

q

TVJ = T

VJM

; IT = 150 A, tP = 200 ms; -di/dt = 10 A/ms typ. 185 ms

VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 V

DRM

Q

S

TVJ = T

VJM

; IT, IF = 50 A, -di/dt = 6 A/ms 170 mC

I

RM

45 A

R

thJC

per thyristor/diode; DC current 0.22 K/W
per module other values 0.11 K/W

R

thJK

per thyristor/diode; DC current see Fig. 8/9 0.42 K/W
per module 0.21 K/W

d

S

Creepage distance on surface 12.7 mm

d

A

Strike distance through air 9.6 mm

a Maximum allowable acceleration 50 m/s

2

Optional accessories for module-type MCC 95 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")

MCC / MCD Version 1 B MCC Version 8 B MCD Version 8 B

MCC 95
MCD 95

Version 1 or 8 without B in typ designation = without insert in mountig holes

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time

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3 - 4

Fig. 3 Surge overload current

I

TSM

, I

FSM

: Crest value, t: duration

Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient
temperature (per thyristor or
diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct
output current and ambient
temperature

MCC 95
MCD 95

© 2000 IXYS All rights reserved

4 - 4

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS
output current and ambient
temperature

Fig. 8 Transient thermal impedance

junction to case (per thyristor or
diode)

Fig. 9 Transient thermal impedance

junction to heatsink (per thyristor
or diode)

MCC 95
MCD 95

R

thJC

for various conduction angles d:

d R

thJC

(K/W)

DC 0.22

180° 0.23
120° 0.25

60° 0.27
30° 0.28

Constants for Z

thJC

calculation:

iR

thi

(K/W) ti (s)

1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.344

R

thJK

for various conduction angles d:

d R

thJK

(K/W)

DC 0.42

180° 0.43
120° 0.45

60° 0.47
30° 0.48

Constants for Z

thJK

calculation:

iR

thi

(K/W) ti (s)

1 0.0066 0.0019
2 0.0678 0.0477
3 0.1456 0.344
4 0.2 1.32