Datasheet MCD26-16IO8, MCD26-14IO8, MCD26-12IO8, MCC26-08IO1, MCC26-08IO8 Datasheet (IXYS)

1 - 4

I

TRMS

= 2x 50 A

I

TAVM

= 2x 32 A

V

RRM

= 800-1600 V

V

RSM

V

RRM

Type

V

DSM

V

DRM

V V Version 1 B Version 8 B Version 8 B

900 800 MCC 26-08io1 B MCC 26-08io8 B MCD 26-08io8 B 1300 1200 MCC 26-12io1 B MCC 26-12io8 B MCD 26-12io8 B 1500 1400 MCC 26-14io1 B MCC 26-14io8 B MCD 26-14io8 B 1700 1600 MCC 26-16io1 B MCC 26-16io8 B MCD 26-16io8 B

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions

Features

●

International standard package, JEDEC TO-240 AA

●

Direct copper bonded Al2O3 -ceramic base plate

●

Planar passivated chips

●

Isolation voltage 3600 V~

●

UL registered, E 72873

●

Gate-cathode twin pins for version 1B

Applications

●

DC motor control

●

Softstart AC motor controller

●

Light, heat and temperature control

Advantages

●

Space and weight savings

●

Simple mounting with two screws

●

Improved temperature and power cycling

●

Reduced protection circuits

Symbol Test Conditions Maximum Ratings I

TRMS

, I

FRMS

TVJ = T

VJM

50 A

I

TAVM

, I

FAVM

TC = 75°C; 180° sine 32 A TC = 85°C; 180° sine 27 A

I

TSM

, I

FSM

TVJ = 45°C; t = 10 ms (50 Hz), sine 520 A VR = 0 t = 8.3 ms (60 Hz), sine 560 A

TVJ = T

VJM

t = 10 ms (50 Hz), sine 460 A

VR = 0 t = 8.3 ms (60 Hz), sine 500 A

òi2dt TVJ = 45°C t = 10 ms (50 Hz), sine 1350 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 1300 A2s TVJ = T

VJM

t = 10 ms (50 Hz), sine 1050 A2s

VR = 0 t = 8.3 ms (60 Hz), sine 1030 A2s

(di/dt)

cr

TVJ = T

VJM

repetitive, IT = 45 A 150 A/ms f =50 Hz, tP =200 ms VD = 2/3 V

DRM

IG = 0.45 A non repetitive, IT = I

TAVM

500 A/ms

diG/dt = 0.45 A/ms

(dv/dt)

cr

TVJ = T

VJM

;V

DR

= 2/3 V

DRM

1000 V/ms

RGK = ¥; method 1 (linear voltage rise)

P

GM

TVJ = T

VJM

tP = 30 ms10W I

T

= I

TAVM

tP = 300 ms5W

P

GAV

0.5 W

V

RGM

10 V

T

VJ

-40...+125 °C

T

VJM

125 °C

T

stg

-40...+125 °C

V

ISOL

50/60 Hz, RMS t = 1 min 3000 V~ I

ISOL

£ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2.5-4.0/22-35 Nm/lb.in. Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.

Weight Typical including screws 9 0 g

MCC 26 MCD 26

Thyristor Modules Thyristor/Diode Modules

6

7

4

5

3

2

1

TO-240 AA

MCD Version 8 B

MCC Version 8 B

MCC Version 1 B

3671542

36152

3152

2 - 4

Symbol Test Conditions Characteristic Values I

RRM

, I

DRM

TVJ= T

VJM

; VR = V

RRM

; VD = V

DRM

3mA

V

T

, V

F

IT, IF = 80 A; TVJ = 25°C 1.64 V

V

T0

For power-loss calculations only (TVJ = 125°C) 0.85 V

r

T

11.0 mW

V

GT

VD = 6 V; TVJ = 25°C 1.5 V

TVJ = -40°C 1.6 V

I

GT

VD = 6 V; TVJ = 25°C 100 mA

TVJ = -40°C 200 mA

V

GD

TVJ = T

VJM

;V

D

= 2/3 V

DRM

0.2 V

I

GD

10 mA

I

L

TVJ = 25°C; tP = 10 ms; VD = 6 V 450 mA IG = 0.45 A; diG/dt = 0.45 A/ms

I

H

TVJ = 25°C; VD = 6 V; RGK = ¥ 200 mA

t

gd

TVJ = 25°C; VD = 1/2 V

DRM

2 ms

IG = 0.45 A; diG/dt = 0.45 A/ms

t

q

TVJ = T

VJM

; IT = 20 A, tP = 200 ms; -di/dt = 10 A/ms typ. 150 ms

VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 V

DRM

Q

S

TVJ = T

VJM

; IT, IF = 25 A, -di/dt = 0.64 A/ms50mC

I

RM

6A

R

thJC

per thyristor/diode; DC current 0.88 K/W per module other values 0.44 K/W

R

thJK

per thyristor/diode; DC current see Fig. 8/9 1.08 K/W per module 0.54 K/W

d

S

Creepage distance on surface 12.7 mm

d

A

Strike distance through air 9.6 mm

a Maximum allowable acceleration 50 m/s

2

Optional accessories for module-type MCC 26 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Dimensions in mm (1 mm = 0.0394")

MCC Version 1 B MCC Version 8 B MCD Version 8 B

MCC 26 MCD 26

10 100 1000

1

10

100

1000

10

0

10

1

10

2

10

3

10

4

0.1

1

10

I

G

V

G

mA

I

G

1: IGT, T

VJ

= 125°C

2: I

GT

, T

VJ

= 25°C

3: I

GT

, T

VJ

= -40°C

µs

t

gd

V

4: P

GAV

= 0.5 W

5: P

GM

= 5 W

6: P

GM

= 10 W

IGD, T

VJ

= 125°C

3

4

2

1

5

6

Limit

typ.

T

VJ

= 25°C

Fig. 1 Gate trigger characteristics

Fig. 2 Gate trigger delay time

3 - 4

Fig. 3 Surge overload current

I

TSM

, I

FSM

: Crest value, t: duration

Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current

at case temperature

Fig. 5 Power dissipation versus on-

state current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge:

Power dissipation versus direct output current and ambient temperature

MCC 26 MCD 26

4 - 4

Fig. 7 Three phase AC-controller:

Power dissipation versus RMS output current and ambient temperature

Fig. 8 Transient thermal impedance

junction to case (per thyristor or diode)

Fig. 9 Transient thermal impedance

junction to

heatsink (per thyristor

or diode)

MCC 26 MCD 26

R

thJC

for various conduction angles d:

d R

thJC

(K/W)

DC 0.88

180° 0.92 120° 0.95

60° 0.98 30° 1.01

Constants for Z

thJC

calculation:

iR

thi

(K/W) ti (s)

1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.191

R

thJK

for various conduction angles d:

d R

thJK

(K/W)

DC 1.08

180° 1.12 120° 1.15

60° 1.18 30° 1.21

Constants for Z

thJK

calculation:

iR

thi

(K/W) ti (s)

1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.191 4 0.2 0.45