Page 1
MCC 224
MCD 224
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
VV
2100 2000 MCC 224-20io1 MCD 224-20io1
2300 2200 MCC 224-22io1 MCD 224-22io1
Symbol Test Conditions Maximum Ratings
I
TRMS
I
TAVM
I
TSM
2
dt TVJ = 45°C t = 10 ms (50 Hz) A2s
òi
(di/dt)
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight Typical including screws g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
V
RRM
V
DRM
Type
TVJ = T
VJM
TC = 85°C; 180° sine A
TVJ = 45°C; t = 10 ms (50 Hz) A
VR = 0 t = 8.3 ms (60 Hz) A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) A
t = 10 ms (50 Hz) A
400
240
8000
8500
7000
7500
A
320000
VR = 0 t = 8.3 ms (60 Hz) A2s
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) A2s
cr
TVJ = T
VJM
f = 50 Hz, tP = 200 ms
VD = 2/3 V
IG= 1 A non repetitive, IT = I
diG/dt = 1 A/ms
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
IT = I
; VDR = 2/3 V
VJM
VJM
TAVM
t = 10 ms (50 Hz) A2s
repetitive, IT = 750 A 100 A/ms
DRM
TAVM
DRM
tP = 30 msW
tP = 500 msW
50/60 Hz, RMS t = 1 min V~
£ 1 mA t = 1 s V~
I
ISOL
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
303000
245000
240000
500 A/ms
1000
120
60
20
10
-40 ...130
130
-40 ...125
3000
3600
4.5-7/40-62
11-13/97-115
V/ms
W
V
°C
°C
°C
750
I
TRMS
I
TAVM
V
= 2x 400 A
= 2x 240 A
= 2000-2200 V
RRM
2
1
3671542
3
7
6
5
MCC
31542
MCD
Features
●
International standard package
●
Direct Copper Bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
4
024
1 - 4
Page 2
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration m/s
TVJ= T
IT=A; T
For power-loss calculations only (TVJ = T
VD= 6 V; TVJ = 25°CV
VD= 6 V; TVJ = 25°CmA
TVJ= T
TVJ= T
; VR = V
VJM
600 1.4
RRM
= 25°CV
VJ
)V
VJM
40
0.8
0.76
mA
mW
2
TVJ = -40°CV
3
150
TVJ = -40°CmA
;VD = 2/3 V
VJM
;VD = 2/3 V
VJM
DRM
DRM
220
0.25
10
V
mA
TVJ = 25°C; VD = 6 V; tP = 30 ms 200 mA
diG/dt = 0.45 A/ms; IG = 0.45 A
TVJ= 25°C; VD = 6 V; RGK = ¥ mA
TVJ= 25°C; VD = 1/2 V
diG/dt = 1 A/ms; IG = 1 A
TVJ = T
dv/dt = 50 V/ms; IT = 300 A; -di/dt = 10 A/ms
TVJ= T
-di/dt = 50 A/ms; IT = 400 A 275 A
; VR = 100 V; VD = 2/3 V
VJM
VJM
DRM
; tP = 200 ms typ. 200 ms
DRM
per thyristor; DC current K/W
per module K/W
per thyristor; DC current K/W
per module K/W
Creeping distance on surface mm
Creepage distance in air mm
150
2 ms
760 mC
0.139
0.069
0.179
0.089
12.7
9.6
50
10
10
1: IGT, T
1: IGT, T
2: I
2: I
V
V
3: I
3: I
V
V
G
G
1
1
0.1
0.1
-3
-3
10
10
GT
GT
GT
GT
IGD, T
IGD, T
, T
, T
, T
, T
VJ
VJ
10
10
= 140°C
= 130°C
VJ
VJ
= 25°C
= 25°C
VJ
VJ
= -40°C
= -40°C
VJ
VJ
1
1
= 140°C
= 130°C
-2
-2
3
3
2
2
-1
-1
10
10
Fig. 1 Gate trigger characteristics
100
100
µs
µs
t
t
gd
gd
typ.
typ.
10
10
2
Limit
Limit
MCC 224
MCD 224
5
5
4
4
4: P
= 20 W
4: P
= 20 W
GM
GM
5: P
5: P
= 60 W
= 60 W
GM
GM
6: P
6: P
= 120 W
= 120 W
GM
GM
0
1
0
10
10
1
10
10
A
A
I
I
G
G
T
= 25°C
T
= 25°C
VJ
VJ
6
6
2
2
10
10
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC MCD
M8x20
M8x20
1
1
0.01 0.1 1 10
0.01 0.1 1 10
I
I
G
G
Fig. 2 Gate trigger delay time
A
A
© 2000 IXYS All rights reserved
2 - 4
Page 3
MCC 224
MCD 224
8000
I
TSM
A
6000
4000
2000
0
0.001 0.01 0.1 1
Fig. 3 Surge overload current
I
: Crest value, t: duration
TSM
500
P
tot
W
400
300
200
100
50 Hz
80 % V
RRM
TVJ = 45°C
= 130°C
T
VJ
s
DC
180° sin
120°
60°
30°
6
10
VR = 0V
I2t
A2s
= 45°C
T
VJ
5
10
4
10
110
t
TVJ = 130°C
ms
t
Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current
400
A
350
I
TAVM
300
250
200
150
100
50
0
0 255075100125150
DC
180° sin
120°
60°
30°
T
C
°C
at case temperature
R
0.1
0.2
0.3
0.4
0.6
0.8
1
thKA
K/W
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
0
0 100 200 300
2000
P
tot
W
1500
1000
Circuit
B6
3xMCC224
500
0
0 200 400 600
© 2000 IXYS All rights reserved
I
TAVM
0 25 50 75 100 125 150
A
A
0 25 50 75 100 125 150
I
dAVM
R
thKA
0.03
0.05
0.08
0.1
0.15
0.2
0.3
°C
°C
T
A
K/W
T
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
A
745
3 - 4
Page 4
MCC 224
MCD 224
2000
R
W
thKA
K/W
0.03
P
tot
1500
0.05
0.08
0.1
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.15
0.2
1000
Circuit
W3
3xMCC224
500
0
0.25
K/W
0.20
Z
thJC
0.15
A
0 25 50 75 100 125 1500 100 200 300 400 500
I
RMS
0.3
°C
T
A
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
for various conduction angles d:
R
thJC
d R
thJC
(K/W)
DC 0.139
180° 0.148
0.10
0.05
0.00
30°
60°
120°
180°
DC
-3
10
-2
10
-1
10
0
10
1
10
s
t
2
10
120° 0.156
60° 0.176
30° 0.214
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.0067 0.00054
2 0.0358 0.098
3 0.0832 0.54
4 0.0129 12
0.30
K/W
0.25
Z
thJK
0.20
0.15
0.10
0.05
0.00
-3
10
-2
10
© 2000 IXYS All rights reserved
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
for various conduction angles d:
R
thJK
d R
thJK
(K/W)
DC 0.179
180° 0.188
30°
60°
120°
180°
DC
-1
10
0
10
1
10
s
t
2
10
120° 0.196
60° 0.216
30° 0.256
Constants for Z
iR
calculation:
thJK
(K/W) ti (s)
thi
1 0.0067 0.00054
2 0.0358 0.098
3 0.0832 0.54
4 0.0129 12
5 0.04 12
745
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