Page 1
MCC 170
Thyristor Modules
Thyristor/Diode Modules
V
RSM
V
DSM
V
RRM
V
DRM
Type
VV
1300 1200 MCC 170-12io1
1500 1400 MCC 170-14io1
1700 1600 MCC 170-16io1
1900 1800 MCC 170-18io1
Symbol Test Conditions Maximum Ratings
I
TRMS
I
TAVM
, I
I
TSM
FSM
2
òi
dt TVJ = 45°C t = 10 ms (50 Hz) 146 000 A2s
TVJ = T
VJM
TC = 85°C; 180° sine 203 A
TVJ = 45°C; t = 10 ms (50 Hz) 5400 A
VR = 0 t = 8.3 ms (60 Hz) 5800 A
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 5500 A
t = 10 ms (50 Hz) 5000 A
VR = 0 t = 8.3 ms (60 Hz) 140 000 A2s
(di/dt)
= T
T
VJ
VJM
VR = 0 t = 8.3 ms (60 Hz) 126 000 A2s
cr
TVJ = T
VJM
f =50 Hz, tP =200 ms
VD = 2/3 V
IG = 1 A, non repetitive, IT = I
DRM
t = 10 ms (50 Hz) 125 000 A2s
repetitive, IT = 660 A 100 A/ms
diG/dt = 1 A/ms
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
= I
I
T
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
Mounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
; VDR = 2/3 V
VJM
VJM
TAVM
DRM
tP = 30 ms 120 W
tP = 500 ms60W
£ 1 mA t = 1 s 3600 V~
Weight Typical including screws 750 g
3671542
350 A
TAVM
500 A/ms
1000 V/ms
-40...+130 °C
130 °C
-40...+125 °C
20 W
10 V
I
TRMS
I
TAVM
V
= 2x 350 A
= 2x 203 A
= 1200-1800 V
RRM
2
1
3
7
6
5
Features
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
4
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1 - 4
Page 2
Symbol Test Conditions Characteristic Values
, I
I
RRM
DRM
, V
V
T
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a Maximum allowable acceleration 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
40 mA
IT, IF = 600 A; TVJ = 25°C 1.65 V
For power-loss calculations only (TVJ = 130°C) 0.8 V
1mW
VD = 6 V; TVJ = 25°C2V
TVJ = -40°C3V
VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
TVJ = T
TVJ = T
;V
VJM
;V
VJM
D
D
= 2/3 V
= 2/3 V
DRM
DRM
0.25 V
10 mA
TVJ = 25°C; tP = 30 ms; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥ 150 mA
TVJ = 25°C; VD = 1/2 V
IG = 1 A; diG/dt = 1 A/ms
TVJ = T
VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 V
; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. 200 ms
VJM
DRM
DRM
2 ms
TVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/ms 550 mC
235 A
per thyristor (diode); DC current 0.164 K/W
per module other values 0.082 K/W
per thyristor (diode); DC current see Fig. 8/9 0.204 K/W
per module 0.102 K/W
Creeping distance on surface 12.7 mm
Creepage distance in air 9.6 mm
MCC 170
10
10
1: IGT, T
1: IGT, T
2: I
2: I
V
V
3: I
3: I
V
V
G
G
1
1
0.1
0.1
-3
-3
10
10
Fig. 1 Gate trigger characteristics
100
100
µs
µs
t
t
gd
gd
10
10
2
GT
GT
GT
GT
IGD, T
IGD, T
, T
, T
, T
, T
VJ
VJ
10
10
= 140°C
= 130°C
VJ
VJ
= 25°C
= 25°C
VJ
VJ
= -40°C
= -40°C
VJ
VJ
1
1
= 140°C
= 130°C
-2
-2
typ.
typ.
2
2
-1
-1
10
10
Limit
Limit
3
3
6
6
5
5
4
4
4: P
= 20 W
4: P
= 20 W
GM
GM
5: P
5: P
= 60 W
= 60 W
GM
GM
6: P
6: P
= 120 W
= 120 W
GM
GM
0
1
0
10
10
10
10
I
I
G
G
T
= 25°C
T
= 25°C
VJ
VJ
2
1
2
10
10
A
A
Optional accessories for modules
Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
M8x20
1
1
0.01 0.1 1 10
0.01 0.1 1 10
I
I
G
G
Fig. 2 Gate trigger delay time
A
A
© 2000 IXYS All rights reserved
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Page 3
MCC 170
6000
I
TSM
A
5000
4000
3000
2000
1000
0
0.001 0.01 0.1 1
50 Hz
80 % V
TVJ = 45°C
T
Fig. 3 Surge overload current
I
, I
: Crest value, t: duration
TSM
FSM
400
P
tot
W
300
200
100
= 130°C
VJ
DC
180° sin
120°
60°
30°
RRM
I2dt
10
A2s
6
I
I
TAVM
FAVM
400
300
A
DC
180° sin
120°
60°
30°
TVJ = 45°C
5
10
TVJ = 130°C
4
s
t
10
110
ms
t
200
100
0
0 25 50 75 100 125 150
T
C
°C
Fig. 4 òi2dt versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
R
0.1
0.2
0.3
0.4
0.6
0.8
1.0
thKA
K/W
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
0
2000
P
tot
W
1500
1000
Circuit
B6
500
0
3xMCC170
I
TAVM/IFAVM
A
I
dAVM
0 2550751001251500 100 200 300
A
0 25 50 75 100 125 1500 200 400 600
R
thKA
0.04
0.06
0.08
0.1
0.15
0.2
0.3
T
A
K/W
T
A
°C
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
°C
© 2000 IXYS All rights reserved
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Page 4
MCC 170
2000
P
tot
W
1500
1000
500
0
0 100 200 300 400
0.25
K/W
Z
thJC
0.20
0.15
Circuit
W3
3xMCC170
I
0 25 50 75 100 125 150
A
RMS
R
0.04
0.06
0.08
0.1
0.15
0.2
0.3
thKA
K/W
°C
T
A
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
for various conduction angles d:
R
thJC
d R
thJC
(K/W)
DC 0.160
180° 0.171
120° 0.180
60° 0.203
30° 0.247
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.0077 0.00054
2 0.0413 0.098
3 0.096 0.54
0.10
0.05
0.00
30°
60°
120°
180°
DC
-3
10
-2
10
-1
10
0
10
1
10
s
t
2
10
4 0.0149 12
0.30
K/W
0.25
Z
thJK
0.20
0.15
30°
0.10
0.05
0.00
-3
10
-2
10
-1
10
0
10
60°
120°
180°
DC
10
1
t
10
s
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
for various conduction angles d:
R
thJK
d R
thJK
(K/W)
DC 0.200
180° 0.211
120° 0.220
60° 0.243
30° 0.287
Constants for Z
2
iR
1 0.0077 0.00054
calculation:
thJK
(K/W) ti (s)
thi
2 0.0413 0.098
3 0.096 0.54
4 0.0149 12
5 0.04 12
© 2000 IXYS All rights reserved
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