Datasheet MC74VHC1G135 Datasheet (LRC)

查询MC74VHC1G135DFT1供应商查询MC74VHC1G135DFT1供应商

LESHAN RADIO COMPANY, LTD.

2-Input NANDSchmitt-Trigger with
Open Drain Output

MC74VHC1G135

The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS
technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including an open drain output which provides the capability to set the output switching
level. This allows the MC74VHC1G135 to be used to interface 5V circuits to circuits of any voltage between V
resistor and power supply.
The MC74VHC1G135 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.
The MC74VHC1G135 can be used to enhance noise immunity or to square up slowly changing waveforms.

• High Speed: t

• Low Internal Power Dissipation: I

• Power Down Protection Provided on Inputs

• Pin and Function Compatible with Other Standard Logic Families

• Chip Complexity: FETs = 70; Equivalent Gates = 18

= 4.9 ns (Typ) at V

PD

= 5 V

CC

= 2 mA (Max) at T A = 25°C

CC

and 7 V using an external

CC

5

4

1

2

3

SC–88A/SOT–353/SC–70

DF SUFFIX

CASE 419A

5

4

1

2

TSOP–5/SOT–23/SC–59

3

DT SUFFIX

CASE 483

PIN ASSIGNMENT

1 IN B
2 IN A
3 GND
4 OUT Y
5V

MARKING DIAGRAMS

d

VZ

Pin 1
d = Date Code

Figure 1. Pinout (Top View)

d

VZ

Figure 2. Logic Symbol

Pin 1
d = Date Code

FUNCTION T ABLE

Inputs Output

AB Y

LL Z
LH Z
HL Z

CC

HH L

ORDERING INFORMATION

See detailed ordering and shipping information in the
package dimensions section on page 4 of this data sheet.

VH135–1/4

LESHAN RADIO COMPANY, LTD.

MC74VHC1G135

MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V

IN

V

OUT

I

IK

I

OK

I

OUT

I

CC

P

D

θ

JA

T

L

T

J

T stg Storage temperature –65 to +150 °C
V

ESD

I

LATCH–UP

1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability . Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.

2. Tested to EIA/JESD22–A114–A

3. Tested to EIA/JESD22–A115–A

4. Tested to JESD22–C101–A

5. Tested to EIA/JESD78

DC Supply Voltage – 0.5 to + 7.0 V
DC Input V oltage – 0.5 to +7.0 V
DC Output Voltage – 0.5 to +7.0 V
Input Diode Current –20 mA
Output Diode Current V

< GND; V

OUT

OUT

> V

CC

+20 mA
DC Output Current, per Pin + 25 mA
DC Supply Current, V

and GND +50 mA

CC

Power dissipation in still air SC–88A, TSOP–5 200 mW
Thermal resistance SC–88A, TSOP–5 333 °C/W
Lead Temperature, 1 mm from Case for 10 s 260 °C
Junction T emperature Under Bias + 150 °C

ESD Withstand Voltage Human Body Model (Note 2) >2000 V

Machine Model (Note 3) > 200

Charged Device Model (Note 4) N/A

Latch–Up Performance Above V

and Below GND at 125°C (Note 5) ± 500 mA

CC

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min Max Unit

V
V
V
T
t r ,t

CC

IN

OUT

A

f

DC Supply Voltage 2.0 5.5 V
DC Input Voltage 0.0 5.5 V
DC Output Voltage 0.0 7.0 V
Operating T emperature Range – 55 + 125 °C
Input Rise and Fall Time V

= 3.3 ± 0.3 V 0 100 ns/V

CC

V

= 5.0 ± 0.5 V 0 20

CC

DEVICE JUNCTION TEMPERATURE VERSUS

TIME TO 0.1% BOND FAILURES

Junction Time, Time,

Temperature °C Ho urs Years

80 1,032,200 117.8

90 419,300 47.9
100 178,700 20.4
1 10 79,600 9.4
120 37,000 4.2
130 17,800 2.0

1

140 8,900 1.0

NORMALIZED FAILURE RATE

1 10 100 1000

TIME, YEARS

Figure 3. Failure Rate vs. Time

Junction Temperature

VH135–2/4

LESHAN RADIO COMPANY, LTD.

MC74VHC1G135

DC ELECTRICAL CHARACTERISTICS

V

CC

Symbol Parameter Test Conditions (V) Min Typ Max Min Max Min Max Unit

V T+

V T–

V H

Positive Threshold
Voltage

Negative Threshold
Voltage

Hysteresis Voltage

V OH Minimum High–Level

Output Voltage
I OH = –50 µA

V OL

Maximum Low–Level
Output Voltage

I IN

Maximum Input
Leakage Current

I CC

Maximum Quiescent
Supply Current

I OPD

Maximum Off–state
Leakage Current

V IN = V IH or V IL
I OH = –50 µA

I OH = –4 mA
I OH = –8 mA

V IN = V IH or V IL
I OL = 50 µA

I OL = 4 mA
I OL = 8 mA

V IN = 5.5 V or GND

V IN = V CC or GND 5.5 2.0 20 40 µA

V OUT = 5.5 V 0 0.25 2.5 5.0 µA

3.0

4.5

5.5

3.0

4.5

5.5

3.0

4.5

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0 to5.5

T A = 25°C T A <

1.50

1.88

2.25

2.35

2.66

3.10

2.80

3.21

3.70

1.03

0.65

1.10

1.45

0.30

0.40

0.50

1.9

2.9

4.4

2.58

3.94

1.40

1.62

2.10

2.02

2.60

0.85

1.60

1.05

2.00

1.20

2.25

2.0

3.0

4.5

0.0

0.1

0.0

0.1

0.0

0.1

0.36

0.36

±0.1 ±1.0 ±1.0 µA

85°C –55°C<TA<

1.50

2.25

2.35

3.10

2.80

3.70

1.40

0.65

2.10

1.10

2.60

1.45

0.30

1.60

0.40

2.00

0.50

2.25

1.9

2.9

4.4

2.48

3.80

0.44

0.44

0.1

0.1

0.1

1.50

2.35

2.80

0.65

1.10

1.45

0.30

0.40

0.50

1.9

2.9

4.4

2.34

3.66

2.25

3.10

3.70

1.40

2.10

2.60

1.60

2.00

2.25

0.1

0.1

0.1

0.52

0.52

125°C

V

V

V

V

V

V

V

AC ELECTRICAL CHARACTERISTICS C

Symbol

Parameter Test Conditions Min Typ Max Min Max Min Max Unit

= 50 pF, Input t r / t f = 3.0 ns

load

T

= 25°C T A <

A

85°C –55°C<AT<125°C

t PZL Maximum Output V CC = 3.3 ± 0.3 V C L = 15 pF 7.6 11.9 1.0 14.0 1.0 16.1 ns

Enable Time, R L = R I = 500 Ω C L = 50 pF 10.1 15.4 1.0 17.5 1.0 19.6
Input A or B to Y

V CC = 5.0 ± 0.5 V C L = 15 pF 4.9 7.7 1.0 9.0 1.0 10.3
R L = R I = 500 Ω C L = 50 pF 6.4 9.7 1.0 11.0 1.0 12.3

t PLZ Maximum Output V CC = 3.3 ± 0.3 V C L = 50 pF 10.1 15.4 17.5 19.6 ns

Disable Time R L = R I = 500 Ω

V CC = 5.0 ± 0.5 V C L = 50 pF 6.4 9.7 11.0 12.3
R L = R I = 500 Ω

C IN Maximum Input 5.0 10 10 10 pF

Capacitance

Typical @ 25°C, V

C

PD

6. C

is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without

PD

load. Average operating current can be obtained by the equation: I
load dynamic power consumption; P D = C

Power Dissipation Capacitance (Note 6) 16 pF

= C

• V

•

2

• V

•

f

CC

+ I

in

PD

CC(OPR)

•

V

CC

CC

PD

.

f

CC

in

+ I

= 5.0 V

CC

.

C

is used to determine the no–

CC

PD

VH135–3/4

LESHAN RADIO COMPANY, LTD.

MC74VHC1G135

Y

Figure 4. Output V oltage Mismatch Application

Figure 6. Test Circuit

Figure 7. Complex Boolean Functions

Figure 5. Switching Waveforms

C L = 50 pF equivalent (Includes jig and probe capacitance)
R L = R 1 = 500 Ω or equivalent
R T = Z OUT of pulse generator (typically 50 Ω)

Figure 8. LED Driver

DEVICE ORDERING INFORMATION

Device Order
Number

MC74VHC1G135DFT1

MC74VHC1G135DFT2

MC74VHC1G135DFT4

MC74VHC1G135DTT1

MC74VHC1G135DTT3

Logic
Circuit
Indicator

MC 74 VHC1G 135 DF T1

MC 74 VHC1G 135 DF T2

MC 74 VHC1G 135 DF T4

MC 74 VHC1G 135 DT T1

MC 74 VHC1G 135 DT T3

Temp
Range
Identifier

Device Nomenclature

Technology

Device
Function

Figure 9. GTL Driver

Package
Suffix

Tape and
Reel Suffix

Package Type

(Name/SOT#/
Common Name)

SC–70/SC–88A/

SOT–353

SC–70/SC–88A/

SOT–353

SC–70/SC–88A/

SOT–353

SOT–23/TSOPS/

SC–59

SOT–23/TSOPS/

SC–59

Tape and
Reel Size

178 mm (7 in)

3000 Unit

178 mm (7 in)

3000 Unit

330 mm (13 in)

10,000 Unit

178 mm (7 in)

3000 Unit

330 mm (13 in)

10,000 Unit

VH135–4/4